EP0848431A3 - Elektrodenstruktur, Herstellungsverfahren und Photostromerzeugeranordnung mit der Elektrode - Google Patents
Elektrodenstruktur, Herstellungsverfahren und Photostromerzeugeranordnung mit der Elektrode Download PDFInfo
- Publication number
- EP0848431A3 EP0848431A3 EP97121877A EP97121877A EP0848431A3 EP 0848431 A3 EP0848431 A3 EP 0848431A3 EP 97121877 A EP97121877 A EP 97121877A EP 97121877 A EP97121877 A EP 97121877A EP 0848431 A3 EP0848431 A3 EP 0848431A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrode structure
- electrode
- generating device
- electroconductive
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005622 photoelectricity Effects 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000945 filler Substances 0.000 abstract 1
- 239000002952 polymeric resin Substances 0.000 abstract 1
- 229920003002 synthetic resin Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP333475/96 | 1996-12-13 | ||
JP8333475A JPH10173210A (ja) | 1996-12-13 | 1996-12-13 | 電極、その形成方法及び該電極を有する光起電力素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0848431A2 EP0848431A2 (de) | 1998-06-17 |
EP0848431A3 true EP0848431A3 (de) | 1998-12-23 |
Family
ID=18266493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP97121877A Withdrawn EP0848431A3 (de) | 1996-12-13 | 1997-12-11 | Elektrodenstruktur, Herstellungsverfahren und Photostromerzeugeranordnung mit der Elektrode |
Country Status (5)
Country | Link |
---|---|
US (1) | US6051778A (de) |
EP (1) | EP0848431A3 (de) |
JP (1) | JPH10173210A (de) |
KR (1) | KR100293132B1 (de) |
CN (1) | CN1127150C (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3031301B2 (ja) * | 1997-06-25 | 2000-04-10 | 日本電気株式会社 | 銅配線構造およびその製造方法 |
JPH11186572A (ja) | 1997-12-22 | 1999-07-09 | Canon Inc | 光起電力素子モジュール |
SE518454C2 (sv) * | 1999-01-15 | 2002-10-08 | Forskarpatent I Uppsala Ab | Metod för framställning av en elektrokemisk cell samt elektrokemisk cell |
JP4009891B2 (ja) * | 1999-11-17 | 2007-11-21 | 富士電機ホールディングス株式会社 | 薄膜太陽電池モジュールの製造方法 |
JP4441102B2 (ja) | 1999-11-22 | 2010-03-31 | キヤノン株式会社 | 光起電力素子及びその製造方法 |
JP2007266648A (ja) * | 1999-11-22 | 2007-10-11 | Canon Inc | 光起電力素子の製造方法、被覆線の被覆除去方法及び被覆線と導体の接合方法 |
JP4467692B2 (ja) * | 1999-12-22 | 2010-05-26 | 株式会社半導体エネルギー研究所 | 太陽電池及びその作製方法 |
JP4776748B2 (ja) * | 1999-12-22 | 2011-09-21 | 株式会社半導体エネルギー研究所 | 太陽電池 |
JP2001345469A (ja) | 2000-06-01 | 2001-12-14 | Canon Inc | 光起電力素子および光起電力素子の製造方法 |
JP2003031829A (ja) * | 2001-05-09 | 2003-01-31 | Canon Inc | 光起電力素子 |
JP2003037277A (ja) | 2001-05-15 | 2003-02-07 | Canon Inc | 光起電力素子及び光起電力素子の製造方法 |
JP2003003134A (ja) * | 2001-06-20 | 2003-01-08 | Japan Gore Tex Inc | Icチップ接着用シートおよびicパッケージ |
US6716549B2 (en) | 2001-12-27 | 2004-04-06 | Avista Laboratories, Inc. | Fuel cell having metalized gas diffusion layer |
US7056608B2 (en) | 2003-02-14 | 2006-06-06 | Relion, Inc. | Current collector for use in a fuel cell |
JP2004273245A (ja) * | 2003-03-07 | 2004-09-30 | Canon Inc | 擬似太陽光照射方法および装置 |
US6939636B2 (en) * | 2003-04-28 | 2005-09-06 | Relion, Inc. | Air cooled fuel cell module |
US7308510B2 (en) * | 2003-05-07 | 2007-12-11 | Intel Corporation | Method and apparatus for avoiding live-lock in a multinode system |
JP2005005639A (ja) * | 2003-06-16 | 2005-01-06 | Canon Inc | 太陽電池素子の光電変換特性の測定方法及び測定装置 |
US20040261838A1 (en) * | 2003-06-25 | 2004-12-30 | Hector Cotal | Solar cell with an electrically insulating layer under the busbar |
AU2004222793B2 (en) * | 2003-10-27 | 2007-07-26 | Mitsubishi Heavy Industries, Ltd. | Solar cell and process for producing solar cell |
JP2005142268A (ja) * | 2003-11-05 | 2005-06-02 | Canon Inc | 光起電力素子およびその製造方法 |
ES2365904T3 (es) * | 2004-01-13 | 2011-10-13 | Sanyo Electric Co., Ltd. | Dispositivo fotovoltaico. |
DE102004050269A1 (de) * | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
KR100647672B1 (ko) * | 2004-12-24 | 2006-11-23 | 삼성에스디아이 주식회사 | 내열성 투명 전극, 이의 제조방법 및 이를 구비한염료감응 태양 전지 |
US8455753B2 (en) * | 2005-01-14 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Solar cell and semiconductor device, and manufacturing method thereof |
FR2880986B1 (fr) * | 2005-01-20 | 2007-03-02 | Commissariat Energie Atomique | Procede de metallisation d'un dispositif semi-conducteur |
US7554031B2 (en) * | 2005-03-03 | 2009-06-30 | Sunpower Corporation | Preventing harmful polarization of solar cells |
EP1869714A1 (de) * | 2005-04-11 | 2007-12-26 | Unaxis Balzers Aktiengesellschaft | Solarzellenmodul und verfahren zu seiner einkapselung |
JP4984458B2 (ja) * | 2005-08-29 | 2012-07-25 | ソニー株式会社 | 半導体装置 |
KR101301194B1 (ko) * | 2007-01-31 | 2013-08-28 | 헨켈 아게 운트 코. 카게아아 | 충전된 스핀 코팅 가능한 물질로 코팅된 반도체 웨이퍼 |
US8212369B2 (en) * | 2007-01-31 | 2012-07-03 | Henkel Ag & Co. Kgaa | Semiconductor wafer coated with a filled, spin-coatable material |
JP5014890B2 (ja) * | 2007-06-20 | 2012-08-29 | パナソニック株式会社 | 電極芯線の接合方法 |
JP5191406B2 (ja) * | 2009-01-16 | 2013-05-08 | シャープ株式会社 | 太陽電池モジュールの製造方法 |
US8062920B2 (en) * | 2009-07-24 | 2011-11-22 | Ovshinsky Innovation, Llc | Method of manufacturing a photovoltaic device |
JP5755405B2 (ja) * | 2009-11-02 | 2015-07-29 | 恵和株式会社 | 太陽電池モジュール裏面用放熱シート及びこれを用いた太陽電池モジュール |
EP2535954B1 (de) * | 2010-02-09 | 2019-06-12 | Nichia Corporation | Lichtemittierende vorrichtung |
JPWO2011155052A1 (ja) * | 2010-06-11 | 2013-08-01 | 株式会社アルバック | 結晶系太陽電池セル及びその製造方法 |
CN101950771A (zh) * | 2010-07-27 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种复合电极的制备方法 |
US8338698B2 (en) | 2010-08-27 | 2012-12-25 | Primestar Solar, Inc. | Anisotropic conductive layer as a back contact in thin film photovoltaic devices |
US8187912B2 (en) | 2010-08-27 | 2012-05-29 | Primestar Solar, Inc. | Methods of forming an anisotropic conductive layer as a back contact in thin film photovoltaic devices |
FR2966158B1 (fr) * | 2010-10-13 | 2012-10-19 | Arkema France | Film a base de polymere fluore pour application photovoltaique |
CN103258867B (zh) * | 2013-04-28 | 2016-04-13 | 宁波日地太阳能电力有限公司 | 一种硅太阳能电池的正面电极及其制备方法 |
CN108183140A (zh) * | 2018-01-22 | 2018-06-19 | 卢泰 | 一种用于柔性薄膜太阳能电池的金属电极及其制作方法 |
US11222855B2 (en) | 2019-09-05 | 2022-01-11 | Skyworks Solutions, Inc. | Moisture barrier for bond pads and integrated circuit having the same |
CN112750915B (zh) * | 2021-03-03 | 2022-11-11 | 中国电子科技集团公司第十八研究所 | 一种薄膜砷化镓太阳电池上电极及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5084107A (en) * | 1989-06-05 | 1992-01-28 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and solar cell array with adhered electrode |
US5457057A (en) * | 1994-06-28 | 1995-10-10 | United Solar Systems Corporation | Photovoltaic module fabrication process |
EP0710990A2 (de) * | 1994-11-04 | 1996-05-08 | Canon Kabushiki Kaisha | Photovoltaisches Bauelement und Herstellungsverfahren |
EP0751575A2 (de) * | 1995-06-28 | 1997-01-02 | Canon Kabushiki Kaisha | Photovoltaische Zelle und Herstellungsverfahren |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4260429A (en) * | 1980-05-19 | 1981-04-07 | Ses, Incorporated | Electrode for photovoltaic cell |
US4283591A (en) * | 1980-05-22 | 1981-08-11 | Ses, Incorporated | Photovoltaic cell |
JPS59167056A (ja) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | シリコン半導体電極 |
US5428249A (en) * | 1992-07-15 | 1995-06-27 | Canon Kabushiki Kaisha | Photovoltaic device with improved collector electrode |
-
1996
- 1996-12-13 JP JP8333475A patent/JPH10173210A/ja not_active Withdrawn
-
1997
- 1997-12-11 US US08/988,967 patent/US6051778A/en not_active Expired - Lifetime
- 1997-12-11 EP EP97121877A patent/EP0848431A3/de not_active Withdrawn
- 1997-12-12 CN CN97122014A patent/CN1127150C/zh not_active Expired - Fee Related
- 1997-12-13 KR KR1019970068522A patent/KR100293132B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5084107A (en) * | 1989-06-05 | 1992-01-28 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and solar cell array with adhered electrode |
US5457057A (en) * | 1994-06-28 | 1995-10-10 | United Solar Systems Corporation | Photovoltaic module fabrication process |
EP0710990A2 (de) * | 1994-11-04 | 1996-05-08 | Canon Kabushiki Kaisha | Photovoltaisches Bauelement und Herstellungsverfahren |
EP0751575A2 (de) * | 1995-06-28 | 1997-01-02 | Canon Kabushiki Kaisha | Photovoltaische Zelle und Herstellungsverfahren |
Also Published As
Publication number | Publication date |
---|---|
CN1185040A (zh) | 1998-06-17 |
KR100293132B1 (ko) | 2001-07-12 |
KR19980064117A (ko) | 1998-10-07 |
US6051778A (en) | 2000-04-18 |
EP0848431A2 (de) | 1998-06-17 |
CN1127150C (zh) | 2003-11-05 |
JPH10173210A (ja) | 1998-06-26 |
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Legal Events
Date | Code | Title | Description |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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17P | Request for examination filed |
Effective date: 19971211 |
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17Q | First examination report despatched |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20050208 |