EP0821460A3 - Current source - Google Patents

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Info

Publication number
EP0821460A3
EP0821460A3 EP97111124A EP97111124A EP0821460A3 EP 0821460 A3 EP0821460 A3 EP 0821460A3 EP 97111124 A EP97111124 A EP 97111124A EP 97111124 A EP97111124 A EP 97111124A EP 0821460 A3 EP0821460 A3 EP 0821460A3
Authority
EP
European Patent Office
Prior art keywords
current source
transistor
switch
connected via
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97111124A
Other languages
German (de)
French (fr)
Other versions
EP0821460A2 (en
EP0821460B1 (en
Inventor
Friedbert Riedel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Electrowatt Technology Innovation AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electrowatt Technology Innovation AG filed Critical Electrowatt Technology Innovation AG
Publication of EP0821460A2 publication Critical patent/EP0821460A2/en
Publication of EP0821460A3 publication Critical patent/EP0821460A3/en
Application granted granted Critical
Publication of EP0821460B1 publication Critical patent/EP0821460B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)

Abstract

The current source has a cascode transistor (T2) whose gate is connected via a first switch (S1) to the drain of an amplifier transistor (T3), whose gate is connected via a second switch (S2) to the drain of a current source transistor (T1). The cascode transistor gate is also connected via a third switch (S3), when a PMOS transistor is used, to an operating voltage (Vdd), or, when an NMOS, to earth. In the on state the first and second switches are closed and the third is open. In the off state the first and second switches are open and the third is closed.
EP97111124A 1996-07-19 1997-07-03 Current source Expired - Lifetime EP0821460B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH181196 1996-07-19
CH181196 1996-07-19
CH1811/96 1996-07-19

Publications (3)

Publication Number Publication Date
EP0821460A2 EP0821460A2 (en) 1998-01-28
EP0821460A3 true EP0821460A3 (en) 1998-04-08
EP0821460B1 EP0821460B1 (en) 2002-06-19

Family

ID=4219161

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97111124A Expired - Lifetime EP0821460B1 (en) 1996-07-19 1997-07-03 Current source

Country Status (5)

Country Link
EP (1) EP0821460B1 (en)
AT (1) ATE219610T1 (en)
CZ (1) CZ223297A3 (en)
DE (1) DE59707548D1 (en)
PL (1) PL183356B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10149769A1 (en) * 2001-10-09 2003-04-17 Philips Corp Intellectual Pty Digitally switchable power source

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0637874A1 (en) * 1993-08-02 1995-02-08 Siemens Aktiengesellschaft MOS switching stage
EP0722221A2 (en) * 1995-01-13 1996-07-17 Nec Corporation Current switching circuit operable at high speed without externally supplied reference bias

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0637874A1 (en) * 1993-08-02 1995-02-08 Siemens Aktiengesellschaft MOS switching stage
EP0722221A2 (en) * 1995-01-13 1996-07-17 Nec Corporation Current switching circuit operable at high speed without externally supplied reference bias

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SÄCKINGER ET AL: "a high-swing, high-impedance mos cascode circuit", IEEE JOURNAL OF SOLID STATE CIRCUITS, vol. 25, no. 1, February 1990 (1990-02-01), NEW-YORK, pages 289 - 298, XP000101879 *

Also Published As

Publication number Publication date
PL320932A1 (en) 1998-02-02
ATE219610T1 (en) 2002-07-15
EP0821460A2 (en) 1998-01-28
EP0821460B1 (en) 2002-06-19
DE59707548D1 (en) 2002-07-25
PL183356B1 (en) 2002-06-28
CZ223297A3 (en) 1998-02-18

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