EP0821460A3 - Stromquelle - Google Patents

Stromquelle Download PDF

Info

Publication number
EP0821460A3
EP0821460A3 EP97111124A EP97111124A EP0821460A3 EP 0821460 A3 EP0821460 A3 EP 0821460A3 EP 97111124 A EP97111124 A EP 97111124A EP 97111124 A EP97111124 A EP 97111124A EP 0821460 A3 EP0821460 A3 EP 0821460A3
Authority
EP
European Patent Office
Prior art keywords
current source
transistor
switch
connected via
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97111124A
Other languages
English (en)
French (fr)
Other versions
EP0821460A2 (de
EP0821460B1 (de
Inventor
Friedbert Riedel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Electrowatt Technology Innovation AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electrowatt Technology Innovation AG filed Critical Electrowatt Technology Innovation AG
Publication of EP0821460A2 publication Critical patent/EP0821460A2/de
Publication of EP0821460A3 publication Critical patent/EP0821460A3/de
Application granted granted Critical
Publication of EP0821460B1 publication Critical patent/EP0821460B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)

Abstract

Eine Konstantstromquelle (1) weist einen Stromquellentransistor (T1), einen als Folger arbeitenden Kaskodetransistor (T2), einen Verstärkertransistor (T3), eine interne Stromquelle (2) und drei Schalter S1, S2 und S3 auf. Die Transistoren (T1, T2, T3) sind PMOS Transistoren. Im eingeschalteten Zustand der Konstantstromquelle (1) sind die Schalter S1 und S2 geschlossen und der Schalter S3 geöffnet. In diesem Zustand bilden der Verstärkertransistor (T3), der Kaskodetransistor (T2) und die Stromquelle (2) eine Gegenkopplungsschleife, um das Potential am Drain des Stromquellentransistors (T1) auf einen möglichst konstanten Wert zu regeln. In die Last L wird ein Strom (Ip) eingespeist. Im ausgeschalteten Zustand der Konstantstromquelle (1) sind die Schalter S1 und S2 geöffnet und der Schalter S3 geschlossen. In die Last L wird kein Strom eingespeist.
Die Schalter S1 und S3 dienen zum Ein- und Ausschalten der Konstantstromquelle (1), während der Schalter S2 die Einschwingzeit beim Ein- und Ausschalten verkürzt.
EP97111124A 1996-07-19 1997-07-03 Stromquelle Expired - Lifetime EP0821460B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH181196 1996-07-19
CH181196 1996-07-19
CH1811/96 1996-07-19

Publications (3)

Publication Number Publication Date
EP0821460A2 EP0821460A2 (de) 1998-01-28
EP0821460A3 true EP0821460A3 (de) 1998-04-08
EP0821460B1 EP0821460B1 (de) 2002-06-19

Family

ID=4219161

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97111124A Expired - Lifetime EP0821460B1 (de) 1996-07-19 1997-07-03 Stromquelle

Country Status (5)

Country Link
EP (1) EP0821460B1 (de)
AT (1) ATE219610T1 (de)
CZ (1) CZ223297A3 (de)
DE (1) DE59707548D1 (de)
PL (1) PL183356B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10149769A1 (de) * 2001-10-09 2003-04-17 Philips Corp Intellectual Pty Digital schaltbare Stromquelle

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0637874A1 (de) * 1993-08-02 1995-02-08 Siemens Aktiengesellschaft MOS-Schaltstufe
EP0722221A2 (de) * 1995-01-13 1996-07-17 Nec Corporation Stromschaltkreis mit hoher Betriebsgeschwindigkeit ohne extern gelieferte Referenzvorspannung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0637874A1 (de) * 1993-08-02 1995-02-08 Siemens Aktiengesellschaft MOS-Schaltstufe
EP0722221A2 (de) * 1995-01-13 1996-07-17 Nec Corporation Stromschaltkreis mit hoher Betriebsgeschwindigkeit ohne extern gelieferte Referenzvorspannung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SÄCKINGER ET AL: "a high-swing, high-impedance mos cascode circuit", IEEE JOURNAL OF SOLID STATE CIRCUITS, vol. 25, no. 1, February 1990 (1990-02-01), NEW-YORK, pages 289 - 298, XP000101879 *

Also Published As

Publication number Publication date
EP0821460A2 (de) 1998-01-28
ATE219610T1 (de) 2002-07-15
PL183356B1 (pl) 2002-06-28
PL320932A1 (en) 1998-02-02
DE59707548D1 (de) 2002-07-25
EP0821460B1 (de) 2002-06-19
CZ223297A3 (cs) 1998-02-18

Similar Documents

Publication Publication Date Title
TW265489B (en) Low-to-high voltage cmos driver circuit for driving capacitive loads
KR870011616A (ko) 센스 앰프
KR910017762A (ko) 출력회로
JP2000151378A5 (de)
DE60122722D1 (de) MOS-Stromerfassungsschaltung
TW325606B (en) Amplifier circuit and multistage amplifier circuit
GB1463103A (en) Switching circuits
EP0570584A4 (de)
WO2004027831A3 (en) Fast dynamic low-voltage current mirror with compensated error
EP0370814A3 (de) Verriegelungskomparator mit Unterdrückung der Nullpunktabweichung
KR970055264A (ko) 차동 증폭기
EP0275940A3 (en) Differential amplifier with controllable power consumption
EP1100200A3 (de) Analogschalter mit zwei komplementären MOS-Feldeffekttransistoren
KR940020189A (ko) 캐스코드 전류 미러가 포함된 집적 회로
EP0821460A3 (de) Stromquelle
HK1002132A1 (en) Cmos buffer circuit cmos
KR910003936A (ko) 스위칭 매트릭스 개폐소자
KR950016002A (ko) 3치 입력 버퍼 회로
CA2112203C (en) Input amplifier circuit
CA2196008A1 (en) Quiescent Current Control for the Output Stage of an Amplifier
KR940026953A (ko) 반도체 메모리 장치
EP0175152A3 (de) Verfahren und Apparat um ein "Latchup Effekt" in einem CMOS-Kreis zu verhindern
KR890011195A (ko) 증폭회로
KR960027331A (ko) 버퍼회로 및 바이어스회로
JPS6473817A (en) Input channel for mos ic

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT CH DE FR LI SE

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

17P Request for examination filed

Effective date: 19981008

AKX Designation fees paid

Free format text: AT CH DE FR LI SE

RBV Designated contracting states (corrected)

Designated state(s): AT CH DE FR LI SE

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SIEMENS AKTIENGESELLSCHAFT

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

17Q First examination report despatched

Effective date: 20011004

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT CH DE FR LI SE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20020619

REF Corresponds to:

Ref document number: 219610

Country of ref document: AT

Date of ref document: 20020715

Kind code of ref document: T

REG Reference to a national code

Ref country code: CH

Ref legal event code: NV

Representative=s name: SIEMENS SCHWEIZ AG

Ref country code: CH

Ref legal event code: EP

REF Corresponds to:

Ref document number: 59707548

Country of ref document: DE

Date of ref document: 20020725

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20020919

EN Fr: translation not filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20030320

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: AT

Payment date: 20040505

Year of fee payment: 8

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: CH

Payment date: 20040517

Year of fee payment: 8

REG Reference to a national code

Ref country code: CH

Ref legal event code: PUE

Owner name: LANDIS+GYR GMBH

Free format text: SIEMENS AKTIENGESELLSCHAFT#WITTELSBACHERPLATZ 2#80333 MUENCHEN (DE) -TRANSFER TO- LANDIS+GYR GMBH#HUMBOLDTSTRASSE 64#90459 NUERNBERG (DE)

Ref country code: CH

Ref legal event code: NV

Representative=s name: OK PAT AG PATENTE MARKEN LIZENZEN

REG Reference to a national code

Ref country code: CH

Ref legal event code: NV

Representative=s name: RENTSCH & PARTNER

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050703

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050731

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050731

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20070919

Year of fee payment: 11

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20090203