EP0811250A1 - Semiconductor device with a roughened semiconductive surface - Google Patents

Semiconductor device with a roughened semiconductive surface

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Publication number
EP0811250A1
EP0811250A1 EP96901222A EP96901222A EP0811250A1 EP 0811250 A1 EP0811250 A1 EP 0811250A1 EP 96901222 A EP96901222 A EP 96901222A EP 96901222 A EP96901222 A EP 96901222A EP 0811250 A1 EP0811250 A1 EP 0811250A1
Authority
EP
European Patent Office
Prior art keywords
semiconductor
semiconductor device
contact metallization
roughened
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96901222A
Other languages
German (de)
French (fr)
Inventor
Helmut Fischer
Gisela Lang
Reinhard Sedlmeier
Ernst Nirschl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
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Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0811250A1 publication Critical patent/EP0811250A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface

Definitions

  • the invention relates to a semiconductor device with a roughened semiconductor surface.
  • Such a semiconductor device is described for example in the patent specification DD 251 905 A3.
  • a light-emitting semiconductor device with a III-V compound semiconductor body is disclosed therein. Its surface is roughened.
  • contact metallizations consisting of a gold beryllium and a gold layer are applied to partial areas of the III-V compound semiconductor surface.
  • the roughening reduces the total reflection of the light radiation generated in the semiconductor device on the surface. As a result, the radiation intensity and thus also the external quantum efficiency of the light-emitting semiconductor device is increased.
  • contact metallizations made from gold beryllium and gold present great difficulties in the production of these semiconductor devices.
  • This invention is therefore based on the object of developing a semiconductor device with a roughened semiconductor surface which has a contact metallization, the contrast ratio of which to the semiconductor material ensures reliable automatic optical detection with conventional camera systems used in chip production, and its connection to the bonding wire has high mechanical strength.
  • a semiconductor device in which a semiconductor body has at least one bondable contact metallization, in which at least a part of the surface of the semiconductor body which is not covered by the contact metallization is roughened and in which the contact metallization is a base metal material on ice.
  • a contact metallization made of a base metal material such as aluminum or an aluminum-based alloy generally has a better contrast ratio to the semiconductor material than the known metallization made of gold. It thus ensures reliable automatic optical detection with conventionally used optical detection systems.
  • the mechanical strength of the The connection between aluminum bond pads and gold bond wires is significantly higher than that of a gold-gold connection.
  • the use of base metallic materials such as aluminum also has the advantage that no special cycles outside of the conventionally used production lines are necessary to manufacture the contact metallizations.
  • the figure shows a semiconductor device according to the invention.
  • a cross section through a light-emitting diode is shown.
  • a p-type GaAs substrate (1) On a p-type GaAs substrate (1) a p-type Al x Ga ⁇ _ x As layer (2) is applied, on which in turn an n-type Al x Ga ⁇ _ x As layer (3) is applied.
  • the underside of the p-type substrate (1) is covered over the entire area with a contact metallization (4) made of a non-precious metallic material.
  • a second contact metalization (5) made of a base metal material is applied, but only a small part of the surface of the n-type A ⁇ Ga ⁇ s layer (3) covered.
  • the contact metallizations (4, 5) consist, for example, of aluminum or an aluminum-based alloy.
  • the free surfaces of the GaAs substrate (1) and the Al x Ga ⁇ _ x As layers (2,3) have a roughening (6).
  • Such a method for producing a semiconductor device with roughened GaAs and Al x Ga ⁇ _ x As surfaces with an Al content of x ⁇ 0.40 and contact metallizations with aluminum surfaces has, for example, the following successive steps: a) producing the semiconductor body ; b) applying the contact metallizations made of aluminum; c) pre-cleaning the semiconductor surface to produce a hydrophilic semiconductor surface, for example by rinsing with water, possibly with detergent additive; d) roughening with an etching mixture of water peroxide (> 30%) and hydrofluoric acid (> 40%) (1000: 6) over a period of 1 to 2.5 minutes. ; e) Etching with a dilute mineral acid, such as sulfuric acid (15%), at 35 ° C for a period of 1 to 2 minutes.
  • a dilute mineral acid such as sulfuric acid (15%)
  • a method for producing a semiconductor device with roughened GaAs and Al x Ga ⁇ _ x As surfaces with an Al content of 0 ⁇ x ⁇ 1 and contact metallizations with aluminum surfaces has, for example, the following successive steps: a) producing the Semiconductor body; b) applying the contact metallization from aluminum, - c) pre-cleaning the semiconductor surface to produce a hydrophilic semiconductor surface, for example by rinsing with water, possibly with detergent additive; d) roughening with nitric acid (65%) at temperatures between 0 ° C and 30 ° C. Depending on the aluminum content x, the temperature and the etching time have to be adapted for the roughening.
  • the known wafer production processes are used to produce the semiconductor device described above. This means that no additional cost-increasing effort is required to manufacture the semiconductor device with a roughened surface.
  • the surface roughening is the last step at the end of the wafer manufacturing process after being separated into chips on a carrier film. If, for example, only the upper side or the upper side and partial areas of the lateral surface of the semiconductor body shown in the figure are to be roughened, the roughening is carried out before the separation in chips or after sawing the dividing lines between the chips.
  • the structures that have already been completed remain unaffected, so that no special processes are necessary for the coating, passivation and contacting of the chips.

Abstract

A semiconductor device has a semiconductor body of which at least part of the non metallised contact surface is roughened. The metallised contact layer is made of a base metallic material such as aluminium. A process that does not attack the metallised contact surface is used to roughen the semiconductive surface.

Description

Beschreibungdescription
Halbleitervorrichtung mit aufgerauhter HalbleiteroberflächeSemiconductor device with roughened semiconductor surface
Die Erfindung bezieht sich auf eine Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche.The invention relates to a semiconductor device with a roughened semiconductor surface.
Eine solche Halbleitervorrichtung ist beispielsweise in der Patentschrift DD 251 905 A3 beschrieben. Darin ist eine lichtaussendende Halbleitervorrichtung mit einem III-V-Ver- bindungshalbleiterkörper offenbart. Seine Oberfläche ist mit einer Aufrauhung versehen. Zur elektrischen Kontaktierung sind auf Teilbereichen der III-V-Verbindungshalbleiterober- fläche Kontaktmetallisierungen, bestehend aus einer Gold- beryllium- und einer Goldschicht, aufgebracht.Such a semiconductor device is described for example in the patent specification DD 251 905 A3. A light-emitting semiconductor device with a III-V compound semiconductor body is disclosed therein. Its surface is roughened. For electrical contacting, contact metallizations consisting of a gold beryllium and a gold layer are applied to partial areas of the III-V compound semiconductor surface.
Die Aufrauhung verringert die Totalreflexion der in der Halbleitervorrichtung erzeugten Lichtstrahlung an der Ober¬ fläche. Folglich ist die Abstrahlstärke und damit auch der externe Quantenwirkungsgrad der lichtaussendenden Halbleiter¬ vorrichtung erhöht.The roughening reduces the total reflection of the light radiation generated in the semiconductor device on the surface. As a result, the radiation intensity and thus also the external quantum efficiency of the light-emitting semiconductor device is increased.
Große Schwierigkeiten bei der Herstellung dieser Halbleiter¬ vorrichtungen bereiten jedoch die Kontaktmetallisierungen aus Goldberyllium und Gold.However, contact metallizations made from gold beryllium and gold present great difficulties in the production of these semiconductor devices.
Als erstes sind hierzu Schwierigkeiten bei der automatischen optischen Erkennung der Goldmetallisierungen zu nennen. Der Grund dafür ist ein ungünstiges Kontrastverhältnis zwischen Halbleiteroberfläche und Goldkontaktoberfläche. Die herkömm¬ lich in den Chip-Montagelinien verwendeten Kamerasysteme müssen speziell für diese Materialkombination justiert wer¬ den. Ohne dieser Justierung ist eine einigermaßen sichere automatische optische Erkennung nicht möglich. Jede Neuju- stierung in Chip-Montagelinien ist jedoch mit zusätzlichen Kosten verbunden. Große Schwierigkeiten bereitet auch die Tatsache, daß die Verbindungsstelle zwischen dem herkömmlich verwendeten Bond¬ draht aus Gold und einem Bondpad aus Gold nur eine geringe mechanische Festigkeit aufweist. Damit steigt die Gefahr des Abreißens der Anschlußverdrahtung während der Chip-Herstel¬ lung, beispielsweise beim Umhüllen.First of all, there are difficulties with the automatic optical detection of the gold metallizations. The reason for this is an unfavorable contrast ratio between the semiconductor surface and the gold contact surface. The camera systems conventionally used in the chip assembly lines have to be adjusted specifically for this material combination. Without this adjustment, a somewhat reliable automatic optical detection is not possible. However, every new adjustment in chip assembly lines is associated with additional costs. The fact that the connection point between the conventionally used gold bonding wire and a gold bonding pad has only a low mechanical strength also poses great difficulties. This increases the risk of the connection wiring being torn off during chip manufacture, for example when wrapping.
Dieser Erfindung liegt daher die Aufgabe zugrunde, eine Halb¬ leitervorrichtung mit aufgerauhter Halbleiteroberfläche zu entwickeln, die eine Kontaktmetallisierung aufweist, deren Kontrastverhältnis zum Halbleitermaterial eine sichere auto¬ matische optische Erkennung mit herkömmlichen in der Chip- Produktion eingesetzten Kamerasystemen gewährleistet und deren Verbindung zum Bonddraht eine hohe mechanische Festig- keit aufweist.This invention is therefore based on the object of developing a semiconductor device with a roughened semiconductor surface which has a contact metallization, the contrast ratio of which to the semiconductor material ensures reliable automatic optical detection with conventional camera systems used in chip production, and its connection to the bonding wire has high mechanical strength.
Diese Aufgabe wird durch eine Halbleitervorrichtung gelöst, bei der ein Halbleiterkörper mindestens eine bondfähige Kontaktmetallisierung aufweist, bei der zumindest ein Teil der Oberfläche des Halbleiterkörpers, der nicht von der Kontaktmetallisierung bedeckt ist, mit einer Aufrauhung versehen ist und bei der die Kontaktmetallisierung einen unedlen metallischen Werkstoff auf eist.This object is achieved by a semiconductor device in which a semiconductor body has at least one bondable contact metallization, in which at least a part of the surface of the semiconductor body which is not covered by the contact metallization is roughened and in which the contact metallization is a base metal material on ice.
Weiterbildungen der Erfindung sind Gegenstand von Unteran¬ sprüchen.Further developments of the invention are the subject of subclaims.
Verfahren zur Herstellung der erfindungsgemäßen Halbleiter¬ vorrichtung sind Gegenstand von Nebenansprüchen.Processes for producing the semiconductor device according to the invention are the subject of subsidiary claims.
Eine Kontaktmetallisierung aus einem unedelen metallischen Werkstoffe wie beispielsweise Aluminium oder eine Aluminium- Basislegierung weist im allgemeinen ein besseres Kontrastver¬ hältnis zum Halbleitermaterial auf als die bekannte Metalli- sierung aus Gold. Sie gewährleistet damit eine zuverlässige automatische optische Erkennung mit herkömmlich eingesetzten optischen ErkennungsSystemen. Die mechanische Festigkeit der Verbindung zwischen Aluminium-Bondpads und Bonddrähten aus Gold ist bedeutend höher als die einer Gold-Gold-Verbindung. Die Verwendung von unedelen metallischen Werkstoffen wie beispielsweise Aluminium hat zudem den Vorteil, daß zur Herstellung der Kontaktmetallisierungen keine Sonderzyklen außerhalb der herkömmlich eingesetzten Produktionslinien notwendig sind.A contact metallization made of a base metal material such as aluminum or an aluminum-based alloy generally has a better contrast ratio to the semiconductor material than the known metallization made of gold. It thus ensures reliable automatic optical detection with conventionally used optical detection systems. The mechanical strength of the The connection between aluminum bond pads and gold bond wires is significantly higher than that of a gold-gold connection. The use of base metallic materials such as aluminum also has the advantage that no special cycles outside of the conventionally used production lines are necessary to manufacture the contact metallizations.
Die Erfindung wird anhand von Auεführungsbeispielen in Ver- bindung mit der Figur näher erläutert.The invention is explained in more detail on the basis of exemplary embodiments in conjunction with the figure.
Die Figur zeigt eine Halbleitervorrichtung gemäß der Erfin¬ dung.The figure shows a semiconductor device according to the invention.
In der Figur ist ein Querschnitt durch eine lichtemittierende Diode dargestellt. Auf einem p-leitenden GaAs-Substrat (1) ist eine p-leitende AlxGaι_xAs-Schicht (2) aufgebracht, auf der wiederum eine n-leitende AlxGaι_xAs-Schicht (3) aufge¬ bracht ist. Die Unterseite des p-leitenden Substrats (1) ist ganzflächig mit einer Kontaktmetallisierung (4) aus einem unedlen metallischen Werkstoff bedeckt. Auf der Oberseite der n-leitenden AlxGaη__xAs-Schicht (3) ist eine zweite Kontaktme¬ tallisierung (5) aus einem unedlen metallischen Werkstoff aufgebracht, die jedoch nur einen kleinen Teil der Oberfläche der n-leitenden A^Ga^^s-Schicht (3) bedeckt. Die Kontakt- etallisierungen (4,5) bestehen beispielsweise aus Aluminium oder einer Aluminium-Basislegierung. Die freien Oberflächen des GaAs-Substrats (1) und der AlxGaι_xAs-Schichten (2,3) weisen eine Aufrauhung (6) auf.In the figure, a cross section through a light-emitting diode is shown. On a p-type GaAs substrate (1) a p-type Al x Gaι_ x As layer (2) is applied, on which in turn an n-type Al x Gaι_ x As layer (3) is applied. The underside of the p-type substrate (1) is covered over the entire area with a contact metallization (4) made of a non-precious metallic material. On the top of the n-type Al x Gaη__ x As layer (3), a second contact metalization (5) made of a base metal material is applied, but only a small part of the surface of the n-type A ^ Ga ^^ s layer (3) covered. The contact metallizations (4, 5) consist, for example, of aluminum or an aluminum-based alloy. The free surfaces of the GaAs substrate (1) and the Al x Gaι_ x As layers (2,3) have a roughening (6).
Zur Herstellung einer solchen Halbleitervorrichtung ist ein Verfahren erforderlich, das einerseits die Oberfläche der Halbleitermaterialien aufrauht und andererseits die Oberflä¬ che der Kontaktmetallisierungen (4,5) zum Erhalt der Bondpad- Eigenschaften nicht angreift. Ein solches Verfahren zur Herstellung einer Halbleitervor¬ richtung mit aufgerauhten GaAs- und AlxGaι_xAs-Oberflachen mit einem AI-Gehalt von x < 0,40 und Kontaktmetallisierungen mit Aluminiumoberflächen weist beispielsweise folgende auf- einanderfolgende Schritte auf : a) Herstellen des Halbleiterkörpers; b) Aufbringen der Kontaktmetallisierungen aus Aluminium; c) Vorreinigen der Halbleiteroberfläche zur Herstellung einer hydrophilen Halbleiteroberfläche beispielsweise durch Wasser- spülen, eventuell mit Detergenzzusatz; d) Aufrauhätzen mit einer Ätzmischung aus Wasserperoxid (> 30%) und Flußεäure (> 40%) (1000:6) über eine Dauer von 1 bis 2, 5 min. ; e) Nachätzen mit einer verdünnten Mineralsäure, wie z.B. Schwefelsäure (15%) , bei 35°C über eine Dauer von 1 bis 2 min.To produce such a semiconductor device, a method is required which roughenes the surface of the semiconductor materials on the one hand and does not attack the surface of the contact metallizations (4, 5) in order to maintain the bond pad properties. Such a method for producing a semiconductor device with roughened GaAs and Al x Gaι_ x As surfaces with an Al content of x <0.40 and contact metallizations with aluminum surfaces has, for example, the following successive steps: a) producing the semiconductor body ; b) applying the contact metallizations made of aluminum; c) pre-cleaning the semiconductor surface to produce a hydrophilic semiconductor surface, for example by rinsing with water, possibly with detergent additive; d) roughening with an etching mixture of water peroxide (> 30%) and hydrofluoric acid (> 40%) (1000: 6) over a period of 1 to 2.5 minutes. ; e) Etching with a dilute mineral acid, such as sulfuric acid (15%), at 35 ° C for a period of 1 to 2 minutes.
Ein Verfahren zur Herstellung einer Halbleitervorrichtung mit aufgerauhten GaAs- und AlxGa^_xAs-Oberflächen mit einem Al- Gehalt von 0 < x < 1 und Kontaktmetallisierungen mit Alumini¬ umoberflächen weist beispielsweise folgende aufeinanderfol¬ gende Schritte auf : a) Herstellen des Halbleiterkörpers; b) Aufbringen der Kontaktmetallisierung aus Aluminium,- c) Vorreinigen der Halbleiteroberfläche zur Herstellung einer hydrophilen Halbleiteroberfläche beispielsweise durch Wasser¬ spülen, eventuell mit Detergenzzusatz; d) Aufrauhätzen mit Salpetersäure (65%) bei Temperaturen zwischen 0°C und 30°C. Je nach Aluminiumgehalt x muß für das Aufrauhätzen die Tem¬ peratur und die Ätzdauer angepaßt werden.A method for producing a semiconductor device with roughened GaAs and Al x Ga ^ _ x As surfaces with an Al content of 0 <x <1 and contact metallizations with aluminum surfaces has, for example, the following successive steps: a) producing the Semiconductor body; b) applying the contact metallization from aluminum, - c) pre-cleaning the semiconductor surface to produce a hydrophilic semiconductor surface, for example by rinsing with water, possibly with detergent additive; d) roughening with nitric acid (65%) at temperatures between 0 ° C and 30 ° C. Depending on the aluminum content x, the temperature and the etching time have to be adapted for the roughening.
Zur Herstellung der oben beschriebenen Halbleitervorrichtung werden die bekannten Waferherstellungsprozesse eingesetzt. Dies bedeutet, daß kein zusätzlicher kostensteigernder Auf¬ wand zur Herstellung der Halbleitervorrichtung mit aufgerauh¬ ter Oberfläche notwendig ist. Die Oberflächenaufrauhung erfolgt als letzter Schritt am Ende des Waferherstellungspro- zesses nach der Vereinzelung in Chips auf einer Trägerfolie. Soll beispielsweise nur die Oberseite oder die Oberseite und Teilbereiche der seitlichen Oberfläche des in der Figur gezeigten Halbleiterkörpers aufgerauht werden, wird die Aufrauhung vor der Vereinzelung in Chips bzw. nach Ansägen der Trennlinien zwischen den Chips vorgenommen. Die bereits fertiggestellten Strukturen bleiben unbeeinträchtigt, so daß zur Vergütung, Passivierung und Kontaktierung der Chips keine besonderen Verfahren notwendig sind. The known wafer production processes are used to produce the semiconductor device described above. This means that no additional cost-increasing effort is required to manufacture the semiconductor device with a roughened surface. The surface roughening is the last step at the end of the wafer manufacturing process after being separated into chips on a carrier film. If, for example, only the upper side or the upper side and partial areas of the lateral surface of the semiconductor body shown in the figure are to be roughened, the roughening is carried out before the separation in chips or after sawing the dividing lines between the chips. The structures that have already been completed remain unaffected, so that no special processes are necessary for the coating, passivation and contacting of the chips.

Claims

Patentansprüche claims
1. Halbleitervorrichtung, bei der ein Halbleiterkörper mindestens eine bondfähige Kontaktmetallisierung (5) aufweist, bei der zumindest ein Teil der Oberfläche des Halbleiterkörpers, der nicht von der Kontaktmetallisierung (5) bedeckt ist, mit einer Aufrauhung (6) versehen ist und bei der die Kontaktmetallisierung (5) einen unedlen metallischen Werkstoff aufweist.1. Semiconductor device in which a semiconductor body has at least one bondable contact metallization (5), in which at least a part of the surface of the semiconductor body that is not covered by the contact metallization (5) is provided with a roughening (6) and in which Contact metallization (5) has a base metal material.
2. Halbleitervorrichtung nach Anspruch 1, bei der die Kontaktmetallisierung (5) aus Aluminium besteht.2. The semiconductor device according to claim 1, wherein the contact metallization (5) consists of aluminum.
3. Halbleitervorrichtung nach Anspruch 1, bei der die Kontaktmetallisierung (5) aus einer Aluminium-Basislegierung besteht.3. A semiconductor device according to claim 1, wherein the contact metallization (5) consists of an aluminum-based alloy.
4. Halbleitervorrichtung nach einem der Ansprüche 1 bis 3, bei der der Halbleiterkörper aus AlxGaτ__xAs besteht.4. Semiconductor device according to one of claims 1 to 3, wherein the semiconductor body consists of Al x Gaτ__ x As.
5. Verfahren zur Herstellung einer Halbleitervorrichtung nach einem der Ansprüche 1 bis 4, mit den Verfahrensschritten: a) Herstellen des Halbleiterkörpers; b) Aufbringen der Kontaktmetallisierung (5) ; c) Vorreinigen der Halbleiteroberfläche zur Herstellung einer hydrophilen Halbleiteroberfläche,- d) Aufrauhätzen mit einer Ätzmischung aus Wasserstoffperoxid und Flußsäure; e) Nachätzen mit einer verdünnten Mineralsäure.5. A method for producing a semiconductor device according to one of claims 1 to 4, with the method steps: a) producing the semiconductor body; b) applying the contact metallization (5); c) pre-cleaning the semiconductor surface to produce a hydrophilic semiconductor surface, - d) roughening with an etching mixture of hydrogen peroxide and hydrofluoric acid; e) etching with a dilute mineral acid.
6. Verfahren zur Herstellung einer Halbleitervorrichtung nach einem der Ansprüche 1 bis 4, mit den Verfahrensschritten: a) Herstellen des Halbleiterkörpers; b) Aufbringen der Kontaktmetallisierung (5) ; c) Vorreinigen der Halbleiteroberfläche zur Herstellung einer hydrophilen Halbleiteroberfläche,- d) Aufrauhätzen mit Salpetersäure. 6. A method for producing a semiconductor device according to one of claims 1 to 4, comprising the method steps: a) producing the semiconductor body; b) applying the contact metallization (5); c) pre-cleaning the semiconductor surface to produce a hydrophilic semiconductor surface, - d) roughening with nitric acid.
EP96901222A 1995-02-23 1996-01-31 Semiconductor device with a roughened semiconductive surface Withdrawn EP0811250A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19506323 1995-02-23
DE19506323A DE19506323A1 (en) 1995-02-23 1995-02-23 Semiconductor device with roughened semiconductor surface
PCT/DE1996/000137 WO1996026550A1 (en) 1995-02-23 1996-01-31 Semiconductor device with a roughened semiconductive surface

Publications (1)

Publication Number Publication Date
EP0811250A1 true EP0811250A1 (en) 1997-12-10

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Country Status (7)

Country Link
US (2) US6140248A (en)
EP (1) EP0811250A1 (en)
JP (1) JP3657270B2 (en)
KR (1) KR19980702427A (en)
DE (1) DE19506323A1 (en)
TW (1) TW299456B (en)
WO (1) WO1996026550A1 (en)

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TW299456B (en) 1997-03-01
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DE19506323A1 (en) 1996-08-29
WO1996026550A1 (en) 1996-08-29

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