WO1996026550A1 - Halbleitervorrichtung mit aufgerauhter halbleiteroberfläche - Google Patents
Halbleitervorrichtung mit aufgerauhter halbleiteroberfläche Download PDFInfo
- Publication number
- WO1996026550A1 WO1996026550A1 PCT/DE1996/000137 DE9600137W WO9626550A1 WO 1996026550 A1 WO1996026550 A1 WO 1996026550A1 DE 9600137 W DE9600137 W DE 9600137W WO 9626550 A1 WO9626550 A1 WO 9626550A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- semiconductor device
- contact metallization
- roughened
- producing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000001465 metallisation Methods 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000007788 roughening Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010953 base metal Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 2
- 239000011707 mineral Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- 239000007769 metal material Substances 0.000 abstract description 3
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- ZEMPKEQAKRGZGQ-AAKVHIHISA-N 2,3-bis[[(z)-12-hydroxyoctadec-9-enoyl]oxy]propyl (z)-12-hydroxyoctadec-9-enoate Chemical compound CCCCCCC(O)C\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CC(O)CCCCCC)COC(=O)CCCCCCC\C=C/CC(O)CCCCCC ZEMPKEQAKRGZGQ-AAKVHIHISA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical compound [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10156—Shape being other than a cuboid at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
Definitions
- the invention relates to a semiconductor device with a roughened semiconductor surface.
- Such a semiconductor device is described for example in the patent specification DD 251 905 A3.
- a light-emitting semiconductor device with a III-V compound semiconductor body is disclosed therein. Its surface is roughened.
- contact metallizations consisting of a gold beryllium and a gold layer are applied to partial areas of the III-V compound semiconductor surface.
- the roughening reduces the total reflection of the light radiation generated in the semiconductor device on the surface. As a result, the radiation intensity and thus also the external quantum efficiency of the light-emitting semiconductor device is increased.
- contact metallizations made from gold beryllium and gold present great difficulties in the production of these semiconductor devices.
- This invention is therefore based on the object of developing a semiconductor device with a roughened semiconductor surface which has a contact metallization, the contrast ratio of which to the semiconductor material ensures reliable automatic optical detection with conventional camera systems used in chip production, and its connection to the bonding wire has high mechanical strength.
- a semiconductor device in which a semiconductor body has at least one bondable contact metallization, in which at least a part of the surface of the semiconductor body which is not covered by the contact metallization is roughened and in which the contact metallization is a base metal material on ice.
- a contact metallization made of a base metal material such as aluminum or an aluminum-based alloy generally has a better contrast ratio to the semiconductor material than the known metallization made of gold. It thus ensures reliable automatic optical detection with conventionally used optical detection systems.
- the mechanical strength of the The connection between aluminum bond pads and gold bond wires is significantly higher than that of a gold-gold connection.
- the use of base metallic materials such as aluminum also has the advantage that no special cycles outside of the conventionally used production lines are necessary to manufacture the contact metallizations.
- the figure shows a semiconductor device according to the invention.
- a cross section through a light-emitting diode is shown.
- a p-type GaAs substrate (1) On a p-type GaAs substrate (1) a p-type Al x Ga ⁇ _ x As layer (2) is applied, on which in turn an n-type Al x Ga ⁇ _ x As layer (3) is applied.
- the underside of the p-type substrate (1) is covered over the entire area with a contact metallization (4) made of a non-precious metallic material.
- a second contact metalization (5) made of a base metal material is applied, but only a small part of the surface of the n-type A ⁇ Ga ⁇ s layer (3) covered.
- the contact metallizations (4, 5) consist, for example, of aluminum or an aluminum-based alloy.
- the free surfaces of the GaAs substrate (1) and the Al x Ga ⁇ _ x As layers (2,3) have a roughening (6).
- Such a method for producing a semiconductor device with roughened GaAs and Al x Ga ⁇ _ x As surfaces with an Al content of x ⁇ 0.40 and contact metallizations with aluminum surfaces has, for example, the following successive steps: a) producing the semiconductor body ; b) applying the contact metallizations made of aluminum; c) pre-cleaning the semiconductor surface to produce a hydrophilic semiconductor surface, for example by rinsing with water, possibly with detergent additive; d) roughening with an etching mixture of water peroxide (> 30%) and hydrofluoric acid (> 40%) (1000: 6) over a period of 1 to 2.5 minutes. ; e) Etching with a dilute mineral acid, such as sulfuric acid (15%), at 35 ° C for a period of 1 to 2 minutes.
- a dilute mineral acid such as sulfuric acid (15%)
- a method for producing a semiconductor device with roughened GaAs and Al x Ga ⁇ _ x As surfaces with an Al content of 0 ⁇ x ⁇ 1 and contact metallizations with aluminum surfaces has, for example, the following successive steps: a) producing the Semiconductor body; b) applying the contact metallization from aluminum, - c) pre-cleaning the semiconductor surface to produce a hydrophilic semiconductor surface, for example by rinsing with water, possibly with detergent additive; d) roughening with nitric acid (65%) at temperatures between 0 ° C and 30 ° C. Depending on the aluminum content x, the temperature and the etching time have to be adapted for the roughening.
- the known wafer production processes are used to produce the semiconductor device described above. This means that no additional cost-increasing effort is required to manufacture the semiconductor device with a roughened surface.
- the surface roughening is the last step at the end of the wafer manufacturing process after being separated into chips on a carrier film. If, for example, only the upper side or the upper side and partial areas of the lateral surface of the semiconductor body shown in the figure are to be roughened, the roughening is carried out before the separation in chips or after sawing the dividing lines between the chips.
- the structures that have already been completed remain unaffected, so that no special processes are necessary for the coating, passivation and contacting of the chips.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52528496A JP3657270B2 (ja) | 1995-02-23 | 1996-01-31 | 半導体デバイスの製造方法 |
EP96901222A EP0811250A1 (de) | 1995-02-23 | 1996-01-31 | Halbleitervorrichtung mit aufgerauhter halbleiteroberfläche |
US08/918,251 US6140248A (en) | 1995-02-23 | 1997-08-25 | Process for producing a semiconductor device with a roughened semiconductor surface |
US09/517,299 US6309953B1 (en) | 1995-02-23 | 2000-03-02 | Process for producing a semiconductor device with a roughened semiconductor surface |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19506323.6 | 1995-02-23 | ||
DE19506323A DE19506323A1 (de) | 1995-02-23 | 1995-02-23 | Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/918,251 Continuation US6140248A (en) | 1995-02-23 | 1997-08-25 | Process for producing a semiconductor device with a roughened semiconductor surface |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996026550A1 true WO1996026550A1 (de) | 1996-08-29 |
Family
ID=7754848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1996/000137 WO1996026550A1 (de) | 1995-02-23 | 1996-01-31 | Halbleitervorrichtung mit aufgerauhter halbleiteroberfläche |
Country Status (7)
Country | Link |
---|---|
US (2) | US6140248A (de) |
EP (1) | EP0811250A1 (de) |
JP (1) | JP3657270B2 (de) |
KR (1) | KR19980702427A (de) |
DE (1) | DE19506323A1 (de) |
TW (1) | TW299456B (de) |
WO (1) | WO1996026550A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7943944B2 (en) | 2002-07-31 | 2011-05-17 | Osram Opto Semiconductors Gmbh | GaN-based radiation-emitting thin-layered semiconductor component |
US8604497B2 (en) | 2003-09-26 | 2013-12-10 | Osram Opto Semiconductors Gmbh | Radiation-emitting thin-film semiconductor chip |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19506323A1 (de) * | 1995-02-23 | 1996-08-29 | Siemens Ag | Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche |
DE19509262C2 (de) * | 1995-03-15 | 2001-11-29 | Siemens Ag | Halbleiterbauelement mit Kunststoffumhüllung und Verfahren zu dessen Herstellung |
US6133589A (en) * | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
JP3586594B2 (ja) * | 1999-08-25 | 2004-11-10 | シャープ株式会社 | 半導体発光素子およびその製造方法 |
DE19953839A1 (de) * | 1999-11-09 | 2001-05-10 | Paul Drude Inst Fuer Festkoerp | Hocheffiziente UV-Emitter auf Nitridhalbleiterbasis |
DE10051465A1 (de) | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
TWI292227B (en) * | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
US7015516B2 (en) * | 2000-11-16 | 2006-03-21 | Gelcore Llc | Led packages having improved light extraction |
KR20030052060A (ko) * | 2001-12-20 | 2003-06-26 | 엘지전자 주식회사 | 발광 소자 및 그의 제조방법 |
TW576864B (en) * | 2001-12-28 | 2004-02-21 | Toshiba Corp | Method for manufacturing a light-emitting device |
JP3776824B2 (ja) * | 2002-04-05 | 2006-05-17 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
US6847057B1 (en) * | 2003-08-01 | 2005-01-25 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices |
US7341878B2 (en) | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
US8748923B2 (en) | 2005-03-14 | 2014-06-10 | Philips Lumileds Lighting Company Llc | Wavelength-converted semiconductor light emitting device |
KR100735496B1 (ko) * | 2006-05-10 | 2007-07-04 | 삼성전기주식회사 | 수직구조 질화갈륨계 led 소자의 제조방법 |
US7670894B2 (en) * | 2008-04-30 | 2010-03-02 | Intel Corporation | Selective high-k dielectric film deposition for semiconductor device |
CN101630706B (zh) * | 2008-07-16 | 2011-02-16 | 玉晶光电股份有限公司 | 正向出光型发光二极管结构 |
CN102130223B (zh) * | 2010-12-06 | 2012-07-25 | 山东华光光电子有限公司 | 一种GaN基LED外延片表面粗化方法 |
TW201242122A (en) * | 2011-04-15 | 2012-10-16 | Chi Mei Lighting Tech Corp | Light-emitting diode device |
KR20140054183A (ko) * | 2011-08-05 | 2014-05-08 | 워스텍, 인코포레이티드 | 나노구조 층을 갖는 발광 다이오드 및 그의 제조 및 사용 방법 |
JP6250429B2 (ja) * | 2014-02-13 | 2017-12-20 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置およびその製造方法 |
CN116799120A (zh) * | 2023-08-28 | 2023-09-22 | 江西兆驰半导体有限公司 | 一种led芯片制备方法及led芯片 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0377322A1 (de) * | 1988-12-26 | 1990-07-11 | The Furukawa Electric Co., Ltd. | Ätzmethode für eine III.V-Halbleiterschicht |
US5132751A (en) * | 1990-06-08 | 1992-07-21 | Eastman Kodak Company | Light-emitting diode array with projections |
JPH0645648A (ja) * | 1992-07-24 | 1994-02-18 | Omron Corp | 上面出射型半導体発光素子、ならびに当該発光素子を用いた光学検知装置、光学的情報処理装置及び発光装置。 |
DE4305296A1 (de) * | 1993-02-20 | 1994-08-25 | Telefunken Microelectron | Strahlungsemittierende Diode mit verbesserter Strahlungsleistung |
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US4142160A (en) * | 1972-03-13 | 1979-02-27 | Hitachi, Ltd. | Hetero-structure injection laser |
CA1058732A (en) * | 1976-06-11 | 1979-07-17 | Northern Telecom Limited | Light emitting diodes with increased light emission efficiency |
DE2719657A1 (de) | 1977-05-03 | 1978-11-09 | Maerklin & Cie Gmbh Geb | Vorrichtung zum anschalten eines zweiten transformators in den stromkreis einer spielzeuganlage |
US4124160A (en) | 1977-07-29 | 1978-11-07 | American Can Company | Round tray |
US4188710A (en) * | 1978-08-11 | 1980-02-19 | The United States Of America As Represented By The Secretary Of The Navy | Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films |
JPS59175776A (ja) * | 1983-03-26 | 1984-10-04 | Toshiba Corp | 半導体発光素子の高出力化処理方法 |
JPS62182200A (ja) * | 1986-02-06 | 1987-08-10 | Sumitomo Electric Ind Ltd | 化合物半導体の化学エツチング法 |
DE19506323A1 (de) * | 1995-02-23 | 1996-08-29 | Siemens Ag | Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche |
-
1995
- 1995-02-23 DE DE19506323A patent/DE19506323A1/de not_active Ceased
-
1996
- 1996-01-31 JP JP52528496A patent/JP3657270B2/ja not_active Expired - Lifetime
- 1996-01-31 WO PCT/DE1996/000137 patent/WO1996026550A1/de not_active Application Discontinuation
- 1996-01-31 KR KR1019970705826A patent/KR19980702427A/ko not_active Application Discontinuation
- 1996-01-31 EP EP96901222A patent/EP0811250A1/de not_active Withdrawn
- 1996-02-08 TW TW085101564A patent/TW299456B/zh not_active IP Right Cessation
-
1997
- 1997-08-25 US US08/918,251 patent/US6140248A/en not_active Expired - Lifetime
-
2000
- 2000-03-02 US US09/517,299 patent/US6309953B1/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0377322A1 (de) * | 1988-12-26 | 1990-07-11 | The Furukawa Electric Co., Ltd. | Ätzmethode für eine III.V-Halbleiterschicht |
US5132751A (en) * | 1990-06-08 | 1992-07-21 | Eastman Kodak Company | Light-emitting diode array with projections |
JPH0645648A (ja) * | 1992-07-24 | 1994-02-18 | Omron Corp | 上面出射型半導体発光素子、ならびに当該発光素子を用いた光学検知装置、光学的情報処理装置及び発光装置。 |
DE4305296A1 (de) * | 1993-02-20 | 1994-08-25 | Telefunken Microelectron | Strahlungsemittierende Diode mit verbesserter Strahlungsleistung |
Non-Patent Citations (3)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 18, no. 270 (E - 1552) 23 May 1994 (1994-05-23) * |
PATENT ABSTRACTS OF JAPAN vol. 6, no. 185 (E - 132) 21 September 1982 (1982-09-21) * |
T. TAKEBE ET AL.: "Fundamental selective etching characteristics of HF+H2O2+H2O mixtures for GaAs", ELECTROCHEMICAL TECHNOLOGY, vol. 140, no. 4, April 1993 (1993-04-01), PRINCETON, NEW JERSEY US, pages 1169 - 1180, XP002002398 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7943944B2 (en) | 2002-07-31 | 2011-05-17 | Osram Opto Semiconductors Gmbh | GaN-based radiation-emitting thin-layered semiconductor component |
US8604497B2 (en) | 2003-09-26 | 2013-12-10 | Osram Opto Semiconductors Gmbh | Radiation-emitting thin-film semiconductor chip |
Also Published As
Publication number | Publication date |
---|---|
EP0811250A1 (de) | 1997-12-10 |
US6140248A (en) | 2000-10-31 |
DE19506323A1 (de) | 1996-08-29 |
KR19980702427A (ko) | 1998-07-15 |
US6309953B1 (en) | 2001-10-30 |
JPH11500581A (ja) | 1999-01-12 |
TW299456B (de) | 1997-03-01 |
JP3657270B2 (ja) | 2005-06-08 |
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