CN116799120A - LED chip preparation method and LED chip - Google Patents
LED chip preparation method and LED chip Download PDFInfo
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- CN116799120A CN116799120A CN202311083137.3A CN202311083137A CN116799120A CN 116799120 A CN116799120 A CN 116799120A CN 202311083137 A CN202311083137 A CN 202311083137A CN 116799120 A CN116799120 A CN 116799120A
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000011265 semifinished product Substances 0.000 claims abstract description 43
- 239000007788 liquid Substances 0.000 claims abstract description 33
- 239000007771 core particle Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 21
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000006023 eutectic alloy Substances 0.000 claims abstract description 15
- 238000000227 grinding Methods 0.000 claims abstract description 11
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000047 product Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 27
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- 235000012239 silicon dioxide Nutrition 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000004151 rapid thermal annealing Methods 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 238000002791 soaking Methods 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 4
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- 238000007747 plating Methods 0.000 claims description 4
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- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
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- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 claims description 3
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- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
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Abstract
The invention provides a preparation method of an LED chip and the LED chip, wherein the method comprises the steps of providing an epitaxial wafer; coarsening the aluminum gallium arsenide layer by adopting a first coarsening solution, and coating indium tin oxide; preparing a first electrode; grinding and thinning are carried out, and a third semi-finished chip is obtained; coating a eutectic alloy on one surface of the third semi-finished chip to form a second electrode, so as to obtain a fourth semi-finished chip; coarsening a second electrode on the processed fourth semi-finished chip through a second coarsening liquid to obtain a fifth semi-finished chip; and separating core particles on the fifth semi-finished product chip, expanding the fifth semi-finished product chip based on the blue film, and coarsening the side wall of the separated core particles to obtain the finished product LED chip. According to the invention, the primary brightness enhancement effect is achieved by coarsening the aluminum gallium arsenide layer, and the further brightness enhancement effect is achieved by coarsening the side wall of the separated core particle.
Description
Technical Field
The invention relates to the technical field of semiconductor chips, in particular to a preparation method of an LED chip and the LED chip.
Background
Along with the development of various high new materials, the promotion of epitaxial equipment, packaging equipment and related process technologies, the LED packaging structure is continuously promoted and new, and the performance is also greatly developed. The infrared forward-mounted product is widely applied to the market, and the common technology of the infrared forward-mounted LED product is to complete the chip manufacturing process through the process steps of epitaxial growth, CB etching, indium tin oxide coating, PAD manufacturing, grinding, back gold, cutting and the like.
In the prior art, chips with the wave band of 940nm in infrared forward-mounted products are widely applied, but the bright spots are insufficient in the commercialized process, and the effect of brightening the chips with the wave band of 940nm is poor, so that the end use effect is often not achieved.
Disclosure of Invention
Accordingly, an object of the present invention is to provide a method for manufacturing an LED chip and an LED chip, so as to at least solve the above-mentioned drawbacks of the prior art.
The invention provides a preparation method of an LED chip, which comprises the following steps:
providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate, a semiconductor layer and an aluminum gallium arsenide layer which are sequentially stacked, and performing pretreatment on the epitaxial wafer to obtain a treated epitaxial wafer;
coarsening the upper surface of the aluminum gallium arsenide layer on the processed epitaxial wafer by adopting a first coarsening solution, and coating indium tin oxide on the coarsened epitaxial wafer to obtain a first semi-finished chip;
photoetching the first semi-finished product chip, and preparing a first electrode on the first semi-finished product chip to obtain a second semi-finished product chip;
grinding the second semi-finished product chip to thin the second semi-finished product chip to obtain a third semi-finished product chip;
coating a film of eutectic alloy on the surface, far away from the first electrode, of the third semi-finished chip to form a second electrode, so as to obtain a fourth semi-finished chip;
processing the fourth semi-finished chip, and coarsening a second electrode on the processed fourth semi-finished chip through a second coarsening liquid to obtain a fifth semi-finished chip;
and separating core particles on the fifth semi-finished product chip, expanding the fifth semi-finished product chip based on a blue film, and coarsening the side wall of the separated core particles to obtain the finished product LED chip with the wave band of 940 nm.
Compared with the prior art, the invention has the beneficial effects that: the first coarsening liquid coarsens the AlGaAs layer on the epitaxial wafer, the brightness can be improved by 30% and the maximum power can be improved by more than 12% through the first coarsening liquid, the second semi-finished product chip is ground and thinned to obtain a third semi-finished product chip, the second electrode is formed by coating the eutectic alloy on the surface, far away from the first electrode, of the third semi-finished product chip, then the second electrode is coarsened to achieve the effect of further brightening, and finally the core particles on the fifth semi-finished product chip are coarsened to achieve the effect of further brightening, so that the luminous effect of the LED chip with the wave band of 940nm is more excellent.
Further, the step of performing pretreatment on the epitaxial wafer includes:
cleaning the epitaxial wafer through a prefabricated solution, and performing a yellow light process on the cleaned epitaxial wafer;
wherein the prefabricated solution comprises sulfuric acid with a mass fraction ratio of 5-6, hydrogen peroxide with a mass fraction ratio of 1-1.2 and water with a mass fraction ratio of 1-1.2.
Further, the first roughening liquid comprises 18-20 mass percent of bromine solution, 450-460 mass percent of hydrogen bromide solution and 6000-6100 mass percent of water;
the step of plating the coarsened epitaxial wafer with indium tin oxide comprises the following steps:
and coating a layer of indium tin oxide with the thickness of 2800A-3000A on the epitaxial wafer by means of evaporation and evaporation.
Further, the step of performing photolithography on the first semi-finished chip and preparing a first electrode on the first semi-finished chip includes;
sequentially carrying out first photoresist homogenizing, first exposure, first baking and first developing on the first semi-finished product chip;
preparing the first electrode with the thickness of 25000A-26000A on the first semi-finished product chip by an evaporation coating mode;
wherein the first electrode is made of chrome gold.
Further, the step of grinding the second semi-finished chip to thin the second semi-finished chip includes:
depositing a layer of silicon dioxide with the thickness of 1000A-1200A on the first electrode on the second semi-finished chip, and grinding and thinning the second semi-finished chip until the thickness is 170-180 mu m;
and cleaning the ground second semi-finished chip by using a buffer oxide etching liquid.
Further, the step of plating the eutectic alloy on the surface of the third semi-finished chip away from the first electrode includes:
coating the eutectic alloy on one surface of the third semi-finished chip far away from the first electrode in a thermal evaporation mode;
and carrying out rapid thermal annealing on the third semi-finished chip coated with the eutectic alloy, wherein the temperature of the rapid thermal annealing is 415-450 ℃, and the time of the rapid thermal annealing is 15-20 s.
Further, the step of processing the fourth semi-finished chip and coarsening the second electrode on the processed fourth semi-finished chip through the second coarsening solution includes:
depositing a layer of silicon dioxide with the thickness of 1000A-1200A on the surface of the second electrode;
sequentially carrying out second photoresist homogenizing, second exposure, second baking and second developing on the fourth semi-finished chip so as to form a preset pattern on the second electrode;
etching the silicon dioxide of a preset part on the second electrode by using a buffer oxide etching solution, soaking the etched second electrode into the etching solution, carrying out water passing on the soaked second electrode, and soaking the second electrode into the etching solution again to expose a region to be roughened on the second electrode;
coarsening the second electrode through a second coarsening liquid.
Further, the buffer oxide etching liquid is a mixed liquid of hydrofluoric acid and water or a mixed liquid of ammonium fluoride and water, the etching liquid is a mixed liquid of iodine and potassium iodide, the soaking time of the second electrode in the etching liquid is 15s-18s, the second roughening liquid comprises nitric acid with the mass fraction ratio of 4-5 and water with the mass fraction ratio of 1-1.2, and the roughening time of the second roughening liquid on the second electrode is 10s-12s.
Further, the step of separating the core particles on the fifth semi-finished chip, expanding the fifth semi-finished chip based on the blue film, and coarsening the side walls of the separated core particles includes:
separating the core particles on the fifth semi-finished product chip by a cutter wheel cutting mode;
pouring the fifth semi-finished chip after core particle separation onto the blue film, and expanding the blue film;
and placing the expanded blue film in a nitric acid solution to coarsen the side wall of the core particle.
The invention also provides an LED chip, which is prepared according to the preparation method of the LED chip.
Drawings
Fig. 1 is a flowchart of a method for manufacturing an LED chip according to a first embodiment of the present invention;
fig. 2 is a power boost diagram of an epitaxial wafer after roughening an aluminum gallium arsenide layer in the epitaxial wafer according to a first embodiment of the present invention;
fig. 3 is a schematic diagram of a roughened second electrode according to a first embodiment of the present invention, (a) shows a back gold ratio of 20% (b) shows a back gold ratio of 30% (c) shows a back gold ratio of 40% (d) shows a back gold ratio of 50%.
The invention will be further described in the following detailed description in conjunction with the above-described figures.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Example 1
Referring to fig. 1, a method for manufacturing an LED chip according to a first embodiment of the present invention is shown, and includes steps S1 to S7:
s1, providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate, a semiconductor layer and an aluminum gallium arsenide layer which are sequentially stacked, and performing pretreatment on the epitaxial wafer to obtain a treated epitaxial wafer;
note that the semiconductor layer includes a first extension layer, a first confinement layer, a waveguide layer, a quantum well layer, a second waveguide layer, a second confinement layer, and a second extension layer, which are stacked in this order.
Specifically, the step S1 includes a step S11:
s11, cleaning the epitaxial wafer through a prefabricated solution, and performing a yellow light process on the cleaned epitaxial wafer; the prefabricated solution comprises sulfuric acid with a mass fraction ratio of 5-6, hydrogen peroxide with a mass fraction ratio of 1-1.2 and water with a mass fraction ratio of 1-1.2, in this embodiment, the prefabricated solution comprises hydrogen peroxide with a mass fraction ratio of 5, hydrogen peroxide with a mass fraction ratio of 1 and water with a mass fraction ratio of 1, the surface of the epitaxial wafer can be cleaned through the prefabricated solution, phosphide on the epitaxial wafer can be cleaned, and then the epitaxial wafer is treated by adopting a yellow light process, so that a region to be roughened on the epitaxial wafer flows out, namely, an aluminum gallium arsenide layer flows out.
S2, coarsening the upper surface of the aluminum gallium arsenide layer on the processed epitaxial wafer by adopting a first coarsening solution, and coating indium tin oxide on the coarsened epitaxial wafer to obtain a first semi-finished chip;
it should be noted that the first roughening liquid includes a bromine solution with a fraction ratio of 18-20, a hydrogen bromide solution with a mass fraction ratio of 450-460, and water with a mass fraction ratio of 6000-6100, and in this embodiment, the first roughening liquid includes a bromine solution with a mass fraction ratio of 18, a hydrogen bromide solution with a mass fraction ratio of 450, and water with a mass fraction ratio of 6000.
It should be explained that after the surface of the aluminum gallium arsenide layer is roughened, the surface of the aluminum gallium arsenide layer can be roughened more uniformly by the first roughening solution, in the roughening process, the roughening depth of the surface of the aluminum gallium arsenide layer is smaller than 1 μm, so that the thickness of the aluminum gallium arsenide layer is 8000 a, and the morphology of the roughened aluminum gallium arsenide layer fluctuates to 3000 a, so that the brightness can be improved by 30%, and the maximum power is improved by more than 12%, and in particular, refer to fig. 2.
Specifically, the step S2 includes a step S21:
s21, coating a layer of indium tin oxide with the thickness of 2800A-3000A on the epitaxial wafer by means of evaporation and evaporation; in this embodiment, the thickness of indium tin oxide is 2800 a.
S3, photoetching the first semi-finished product chip, and preparing a first electrode on the first semi-finished product chip to obtain a second semi-finished product chip;
specifically, the step S3 includes steps S31 to S32:
s31, sequentially carrying out first photoresist evening, first exposure, first baking and first developing on the first semi-finished product chip; in the step, photoetching of the first electrode preparation is completed by sequentially carrying out first photoresist evening, first exposure, first baking and first developing on the first semi-finished product chip.
S32, preparing the first electrode with the thickness of 25000A-26000A on the first semi-finished chip by means of evaporation coating; in this step, the process of the first electrode is completed by evaporation coating, in this embodiment, the thickness of the first electrode is 25000 a, and the first electrode is made of chrome gold.
S4, grinding the second semi-finished product chip to thin the second semi-finished product chip to obtain a third semi-finished product chip;
specifically, the step S4 includes steps S41 to S42:
s41, depositing a layer of silicon dioxide with the thickness of 1000-1200A on the first electrode on the second semi-finished chip, and grinding and thinning the second semi-finished chip until the thickness is 170-180 mu m; in this step, after the first electrode process is completed, in this embodiment, a layer of silicon dioxide with a thickness of 1000 a is deposited on the surface of the first electrode, where the silicon dioxide is used to protect the first electrode and the epitaxial wafer from being damaged during the polishing process, and in this embodiment, the second semi-finished chip is polished to 170 μm.
S42, cleaning the ground second semi-finished chip through a buffer oxide etching solution; in this step, it should be explained that the silicon dioxide is used for protecting the first electrode and the epitaxial wafer during the grinding and thinning process of the second semi-finished chip, and after the second semi-finished chip is thinned, the silicon dioxide needs to be cleaned at this time, and in this embodiment, the second semi-finished chip is cleaned by using the buffer oxide etching solution.
S5, coating a film of eutectic alloy on one surface, far away from the first electrode, of the third semi-finished chip to form a second electrode, so as to obtain a fourth semi-finished chip;
specifically, the step S5 includes steps S51 to S52:
s51, coating the eutectic alloy on one surface of the third semi-finished chip far away from the first electrode in a thermal evaporation mode; in this step, the eutectic alloy is applied to the side of the third semi-finished chip remote from the first electrode by means of thermal evaporation, i.e. to the rear side of the third semi-finished chip.
S52, carrying out rapid thermal annealing on the third semi-finished chip coated with the eutectic alloy, wherein the rapid thermal annealing temperature is 415-450 ℃, and the rapid thermal annealing time is 15-20S; in this embodiment, the temperature of the rapid thermal annealing is 415 ℃, and the time during the rapid thermal annealing is 15s, so that the second electrode can be formed on the back surface of the third semi-finished chip, and further the fourth semi-finished chip can be obtained.
S6, processing the fourth semi-finished chip, and coarsening a second electrode on the processed fourth semi-finished chip through a second coarsening liquid to obtain a fifth semi-finished chip;
specifically, the step S6 includes steps S61 to S64:
s61, depositing a layer of silicon dioxide with the thickness of 1000A-1200A on the surface of the second electrode; in this step, silicon dioxide is deposited on the surface of the second electrode, where the silicon dioxide is used to protect the second electrode and the fourth semi-finished chip from damage in the subsequent process, and in this embodiment, the thickness of the silicon dioxide deposited on the surface of the second electrode is 1000 a.
S62, sequentially carrying out second spin coating, second exposure, second baking and second development on the fourth semi-finished chip to form a preset pattern on the second electrode; in the step, the second photoresist homogenizing, the second exposure, the second baking and the second developing are sequentially carried out on the fourth semi-finished chip, and the photoetching of the second electrode is completed, so that a preset pattern is formed on the second electrode, and the preset pattern can be designed according to the requirement.
S63, corroding the silicon dioxide of a preset part on the second electrode through a buffer oxide etching solution, soaking the corroded second electrode into the etching solution, carrying out water passing on the soaked second electrode, and soaking the second electrode into the etching solution again to expose a region to be roughened on the second electrode; in this step, it can be known through verification that the area of the second electrode to be roughened accounts for 40% of the core particle, and the brightness is optimal, specifically referring to fig. 3, the second electrode is corroded by the buffer oxide etching solution to corrode silicon dioxide in the pattern to be roughened, the corroded second electrode is soaked in the etching solution for 15s-18s, in this embodiment, the soaking time is 15s, water treatment is performed after the soaking is completed, and then the second electrode is continuously soaked in the etching solution for 15s, so that metal in the preset pattern is corroded, and the area to be roughened is left;
s64, coarsening the second electrode through a second coarsening liquid; in this step, the second electrode was roughened by the second roughening liquid for 10s-12s, and in this example, the roughening time was 10s, that is, the appearance after roughening was as shown in fig. 3, which was 10s standing in the second roughening liquid.
It is worth to say that the buffer oxide etching solution is a mixed solution of hydrofluoric acid and water or a mixed solution of ammonium fluoride and water, the etching solution is a mixed solution of iodine and potassium iodide, the second roughening solution comprises nitric acid with a mass fraction ratio of 4-5 and water with a mass fraction ratio of 1-1.2, and in this embodiment, the second roughening solution comprises nitric acid with a mass fraction ratio of 4 and water with a mass fraction ratio of 1.
S7, separating core particles on the fifth semi-finished product chip, expanding the fifth semi-finished product chip based on a blue film, and coarsening the side wall of the separated core particles to obtain a finished product LED chip with the wave band of 940 nm;
specifically, the step S7 includes steps S71 to S73:
s71, separating the core particles on the fifth semi-finished product chip by a cutter wheel cutting mode;
s72, pouring the fifth semi-finished chip after core particle separation onto the blue film, and expanding the blue film;
s73, placing the expanded blue film in a nitric acid solution to coarsen the side wall of the core particle; in the step, the blue film is placed in a nitric acid solution for standing for 8 seconds, the temperature of the nitric acid solution is 8 ℃, coarsening of the side wall of the core particle can be completed, further the effect of further brightening can be achieved, and the preparation of the core particle is completed by removing the residual silicon dioxide.
It should be noted that the morphology fluctuation of the coarsening of the core particles is 1.6 μm, the coarsening effect is uniform, and the obtained finished LED chip is specifically a forward-mounted LED chip with the wave band of 940 nm.
In summary, according to the method for manufacturing the LED chip in the above embodiment of the present invention, the first roughening solution is used to roughen the aluminum gallium arsenide layer on the epitaxial wafer, the brightness can be improved by 30% and the maximum power can be improved by more than 12% through the first roughening, the second semi-finished product chip is ground and thinned to obtain the third semi-finished product chip, the second electrode is formed by coating the eutectic alloy on the surface of the third semi-finished product chip far from the first electrode, and then the second electrode is roughened to achieve the effect of further brightening, and finally the core particle on the fifth semi-finished product chip is roughened to achieve the effect of further brightening, so that the light-emitting effect of the LED chip with the wavelength band of 940nm is more excellent.
Example two
The second embodiment of the invention provides an LED chip, which is prepared according to the preparation method of the LED chip. It should be noted that the LED chip in the second embodiment of the present invention is specifically a front-mounted LED chip with a wavelength band of 940 nm.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. A method for manufacturing an LED chip, the method comprising:
providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate, a semiconductor layer and an aluminum gallium arsenide layer which are sequentially stacked, and performing pretreatment on the epitaxial wafer to obtain a treated epitaxial wafer;
coarsening the upper surface of the aluminum gallium arsenide layer on the processed epitaxial wafer by adopting a first coarsening solution, and coating indium tin oxide on the coarsened epitaxial wafer to obtain a first semi-finished chip;
photoetching the first semi-finished product chip, and preparing a first electrode on the first semi-finished product chip to obtain a second semi-finished product chip;
grinding the second semi-finished product chip to thin the second semi-finished product chip to obtain a third semi-finished product chip;
coating a film of eutectic alloy on the surface, far away from the first electrode, of the third semi-finished chip to form a second electrode, so as to obtain a fourth semi-finished chip;
processing the fourth semi-finished chip, and coarsening a second electrode on the processed fourth semi-finished chip through a second coarsening liquid to obtain a fifth semi-finished chip;
and separating core particles on the fifth semi-finished product chip, expanding the fifth semi-finished product chip based on a blue film, and coarsening the side wall of the separated core particles to obtain the finished product LED chip with the wave band of 940 nm.
2. The method of manufacturing an LED chip of claim 1, wherein said step of pre-processing said epitaxial wafer comprises:
cleaning the epitaxial wafer through a prefabricated solution, and performing a yellow light process on the cleaned epitaxial wafer;
wherein the prefabricated solution comprises sulfuric acid with a mass fraction ratio of 5-6, hydrogen peroxide with a mass fraction ratio of 1-1.2 and water with a mass fraction ratio of 1-1.2.
3. The method for manufacturing an LED chip according to claim 1, wherein the first roughening liquid includes a bromine solution with a mass fraction ratio of 18-20, a hydrogen bromide solution with a mass fraction ratio of 450-460, and water with a mass fraction ratio of 6000-6100;
the step of plating the coarsened epitaxial wafer with indium tin oxide comprises the following steps:
and coating a layer of indium tin oxide with the thickness of 2800A-3000A on the epitaxial wafer by means of evaporation and evaporation.
4. The method of manufacturing an LED chip of claim 1, wherein said step of performing photolithography on said first semi-finished chip and manufacturing a first electrode on said first semi-finished chip comprises;
sequentially carrying out first photoresist homogenizing, first exposure, first baking and first developing on the first semi-finished product chip;
preparing the first electrode with the thickness of 25000A-26000A on the first semi-finished product chip by an evaporation coating mode;
wherein the first electrode is made of chrome gold.
5. The method of manufacturing an LED chip of claim 1, wherein said step of grinding said second semi-finished chip to thin said second semi-finished chip comprises:
depositing a layer of silicon dioxide with the thickness of 1000A-1200A on the first electrode on the second semi-finished chip, and grinding and thinning the second semi-finished chip until the thickness is 170-180 mu m;
and cleaning the ground second semi-finished chip by using a buffer oxide etching liquid.
6. The method of manufacturing an LED chip of claim 1, wherein said step of plating a eutectic alloy on a side of said third semi-finished chip remote from said first electrode comprises:
coating the eutectic alloy on one surface of the third semi-finished chip far away from the first electrode in a thermal evaporation mode;
and carrying out rapid thermal annealing on the third semi-finished chip coated with the eutectic alloy, wherein the temperature of the rapid thermal annealing is 415-450 ℃, and the time of the rapid thermal annealing is 15-20 s.
7. The method of manufacturing an LED chip of claim 1, wherein said step of processing said fourth semi-finished chip and roughening said processed second electrode on said fourth semi-finished chip with a second roughening solution comprises:
depositing a layer of silicon dioxide with the thickness of 1000A-1200A on the surface of the second electrode;
sequentially carrying out second photoresist homogenizing, second exposure, second baking and second developing on the fourth semi-finished chip so as to form a preset pattern on the second electrode;
etching the silicon dioxide of a preset part on the second electrode by using a buffer oxide etching solution, soaking the etched second electrode into the etching solution, carrying out water passing on the soaked second electrode, and soaking the second electrode into the etching solution again to expose a region to be roughened on the second electrode;
coarsening the second electrode through a second coarsening liquid.
8. The method according to claim 7, wherein the buffer oxide etching liquid is a mixed liquid of hydrofluoric acid and water or a mixed liquid of ammonium fluoride and water, the etching liquid is a mixed liquid of iodine and potassium iodide, the soaking time of the second electrode in the etching liquid is 15s-18s, the second roughening liquid comprises nitric acid with a mass fraction ratio of 4-5 and water with a mass fraction ratio of 1-1.2, and the roughening time of the second roughening liquid on the second electrode is 10s-12s.
9. The method of manufacturing an LED chip of claim 1, wherein said separating the core particles on the fifth semi-finished chip, expanding the fifth semi-finished chip based on a blue film, and roughening the sidewalls of the separated core particles comprises:
separating the core particles on the fifth semi-finished product chip by a cutter wheel cutting mode;
pouring the fifth semi-finished chip after core particle separation onto the blue film, and expanding the blue film;
and placing the expanded blue film in a nitric acid solution to coarsen the side wall of the core particle.
10. An LED chip, characterized in that the LED chip is prepared according to the method for preparing an LED chip according to any one of claims 1 to 9.
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