EP0806780A1 - Zink-Phosphatbeschichtung für Varistor und Verfahren zur Herstellung - Google Patents

Zink-Phosphatbeschichtung für Varistor und Verfahren zur Herstellung Download PDF

Info

Publication number
EP0806780A1
EP0806780A1 EP96400993A EP96400993A EP0806780A1 EP 0806780 A1 EP0806780 A1 EP 0806780A1 EP 96400993 A EP96400993 A EP 96400993A EP 96400993 A EP96400993 A EP 96400993A EP 0806780 A1 EP0806780 A1 EP 0806780A1
Authority
EP
European Patent Office
Prior art keywords
oxide
electrically conductive
varistor
zinc
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP96400993A
Other languages
English (en)
French (fr)
Other versions
EP0806780B1 (de
Inventor
Palaniappan Ravindranathan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Littelfuse Inc
Original Assignee
Harris Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harris Corp filed Critical Harris Corp
Priority to EP96400993A priority Critical patent/EP0806780B1/de
Priority to AT96400993T priority patent/ATE195198T1/de
Publication of EP0806780A1 publication Critical patent/EP0806780A1/de
Application granted granted Critical
Publication of EP0806780B1 publication Critical patent/EP0806780B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102—Varistor boundary, e.g. surface layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/034—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath

Definitions

  • the present invention relates to nonlinear resistive devices, such as varistors, and more particularly to methods of making such devices using barrel plating techniques in which only the electrically contactable end terminals of the device are plated.
  • Nonlinear resistive devices are disclosed in the specifications of U.S. Patent No. 5,115,221.
  • Figure 1 is a typical device 10 that includes plural layers 12 of semiconductor material with electrically conductive electrodes 14 between adjacent layers. A portion of each electrode 14 is exposed in a terminal region 16 so that electrical contact may be made therewith. The electrodes 14 may be exposed at one or both of opposing terminal regions, and typically the electrodes are exposed at alternating terminal regions 16 as illustrated. The exposed portions of the electrodes 14 are contacted by electrically conductive end terminals 18 that cover the terminal regions 16.
  • the apparently simple structure of such devices belies their manufacturing complexity.
  • the attachment of the end terminals 18 has proved to be a problem in search of a solution.
  • the terminal regions may be plated with nickel and tin-lead metals to increase solderability and decrease solder leaching.
  • One method of affixing the end terminals 18 is to use a conventional barrel plating method in which the entire device is immersed in a plating solution.
  • the stacked layers are semiconductor material, such as zinc oxide, that may be conductive during the plating process so that the plating adheres to the entire surface of the device.
  • a portion of the plating must be removed after immersion, or covered before immersion with a temporary plating resist comprised of an organic substance insoluble to the plating solution.
  • a temporary plating resist comprised of an organic substance insoluble to the plating solution.
  • the removal of the plating or organic plating resist is an extra step in the manufacturing process, and may involve the use of toxic materials that further complicate the manufacturing process.
  • the metal forming the end terminals 18 be flame sprayed onto the device, with the other portions of the surface of the device being masked. Flame spraying is not suitable for many manufacturing processes because it is slow and includes the creation of a special mask, with the additional steps attendant therewith, as disclosed in the specification of U.S. Patent No. 4,316,171.
  • An object of the present invention is to provide a method and device that obviates the problems of the prior art, and in which an electrically insulating, inorganic layer is formed on portions of the device before the device is barrel plated.
  • Another object is to provide a method and device in which a phosphoric acid is reacted with the exposed surface of stacked zinc oxide semiconductor layers to form a zinc phosphate coating, and in which a zinc phosphate coating protects portions of the device that are not to be plated when the end terminals are formed.
  • a further object is to provide a method and nonlinear resistive device having a body of layers of semiconductor material with an electrode between adjacent layers, in which the body of the nonlinear resistive device is coated with an inorganic layer that is electrically insulating, except at a terminal region of the body where an electrode is exposed for connection to an end terminal, and in which the coated body is plated with an electrically conductive metal to form the end terminal in a process in which the body becomes electrically conductive and in which the electrically conductive metal does not plate the coated portions of the body because the inorganic layer is not electrically conductive.
  • the present invention includes a method of making a nonlinear resistive device comprising the steps of:
  • the invention also includes a method of providing an electrically insulative coating for a varistor, the method comprising the steps of:
  • Figure 2 illustrates an embodiment of a nonlinear resistive element 20 that includes a body 22 having stacked zinc oxide semiconductor layers 24 with planar electrodes 26 between adjacent pairs of layers 24.
  • Each electrode 26 has a contactable portion 28 that is exposed for electrical connection to electrically conductive metal (preferably silver, silver-platinum, or silver-palladium) end terminations 30 that cover terminal regions 32 of the body 22 and contact the electrodes 26.
  • electrically conductive metal preferably silver, silver-platinum, or silver-palladium
  • the portions of body 22 not covered with the end terminations 30 are coated with an electrically insulative zinc phosphate layer 34.
  • the end terminations 30 may be plated with layers 36 of electrically conductive metal that form electrically contactable end portions for the resistive element 20.
  • the zinc oxide layers 24 may have the following composition in mole percent: 94-98% zinc oxide and 2-6% of one or more of the following additives; bismuth oxide, cobalt oxide, manganese oxide, nickel oxide, antimony oxide, boric oxide, chromium oxide, silicon oxide, aluminum nitrate, and other equivalents.
  • the body 22 and end terminations 30 are provided conventionally.
  • the zinc phosphate layer 34 may be formed by reacting phosphoric acid with the zinc oxide semiconductor layers exposed at the exterior of the body 22. The reaction may take place for 25-35 minutes at 70° to 80°C.
  • one part orthophosphoric acid 85 wt% may be added to fifty parts deionized water. The solution may be heated to 75°C and stirred.
  • the body 22 with end terminations 30 affixed may be washed with acetone and dried at 100°C for ten minutes. The washed device may be submerged in the phosphoric acid solution at 75°C for thirty minutes to provide the layer 34.
  • the body may be cleaned with hot, deionized water and dried at about 100°C for about fifteen minutes.
  • the layer 34 does not adhere to the end terminations 30 because the silver or silver-platinum in the end terminations 30 is not affected by the phosphoric acid.
  • the phosphoric acid solution may also be applied by spraying, instead of submerging, the washed device.
  • the device may be barrel plated with an electrically conductive metal, such as nickel and tin-lead, to provide the layers 36.
  • an electrically conductive metal such as nickel and tin-lead
  • a conventional barrel plating process may be used, although the pH of the plating solution is desirably kept between about 4.0 and 6.0.
  • the device is made electrically conductive and the plating material adheres to the electrically charged portions of the device.
  • the metal plating of layers 36 does not plate the zinc phosphate layer 34 during the barrel plating because the zinc phosphate is not electrically conductive.
  • the zinc phosphate layer 34 is electrically insulating and may be retained in the final product to provide additional protection.
  • the layer 34 does not effect the I-V characteristics of the device.
  • the phosphate layer may be an inorganic oxide layer formed by the reaction of phosphoric acid with the metal oxide semiconductor in the device.
  • the semiconductor may be iron oxide, a ferrite, etc.
  • a high energy disc varistor has a glass or polymer insulating layer on its sides.
  • the disc varistor 40 may have an insulating layer 42 of phosphate formed in the manner discussed above.
  • the present invention is applicable to other varistor products such as a surface mount device depicted in Figure 4, radial parts, arrays, connector pins, discoidal construction, etc.
  • the device is reacted with phosphoric acid to form a phosphate on the exposed surfaces of the semiconductor but not on the metal end terminations.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
EP96400993A 1996-05-09 1996-05-09 Zink-Phosphatbeschichtung für Varistor und Verfahren zur Herstellung Expired - Lifetime EP0806780B1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP96400993A EP0806780B1 (de) 1996-05-09 1996-05-09 Zink-Phosphatbeschichtung für Varistor und Verfahren zur Herstellung
AT96400993T ATE195198T1 (de) 1996-05-09 1996-05-09 Zink-phosphatbeschichtung für varistor und verfahren zur herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96400993A EP0806780B1 (de) 1996-05-09 1996-05-09 Zink-Phosphatbeschichtung für Varistor und Verfahren zur Herstellung

Publications (2)

Publication Number Publication Date
EP0806780A1 true EP0806780A1 (de) 1997-11-12
EP0806780B1 EP0806780B1 (de) 2000-08-02

Family

ID=8225256

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96400993A Expired - Lifetime EP0806780B1 (de) 1996-05-09 1996-05-09 Zink-Phosphatbeschichtung für Varistor und Verfahren zur Herstellung

Country Status (2)

Country Link
EP (1) EP0806780B1 (de)
AT (1) ATE195198T1 (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5757263A (en) * 1994-12-09 1998-05-26 Harris Corporation Zinc phosphate coating for varistor
GB2326976A (en) * 1997-06-30 1999-01-06 Harris Corp Varistor nickel barrier electrode
EP0969481A1 (de) * 1998-07-02 2000-01-05 Harris Corporation Zink-Phosphatbeschichtung für Varistor und Verfahren zur Herstellung
US6841191B2 (en) * 2002-02-08 2005-01-11 Thinking Electronic Industrial Co., Ltd. Varistor and fabricating method of zinc phosphate insulation for the same
US11037710B2 (en) 2018-07-18 2021-06-15 Avx Corporation Varistor passivation layer and method of making the same
CN113363029A (zh) * 2020-03-06 2021-09-07 立昌先进科技股份有限公司 电子组件封装结构及其制作方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2044531A (en) * 1979-02-09 1980-10-15 Tdk Electronics Co Ltd Non-linear resistance elements and method for manufacturing same
US4316171A (en) * 1979-02-09 1982-02-16 Tdk Electronics Co., Ltd. Non-linear resistance elements and method for manufacturing same
GB2100246A (en) * 1981-06-16 1982-12-22 Armstrong World Ind Inc Phosphate ceramic materials
JPH01259506A (ja) * 1988-04-11 1989-10-17 Rohm Co Ltd 電子部品のニッケルメッキ方法
JPH03131004A (ja) * 1989-10-17 1991-06-04 Toshiba Corp 非直線抵抗体の製造方法
JPH0483302A (ja) * 1990-07-26 1992-03-17 Toshiba Corp 非直線抵抗体の製造方法
US5115221A (en) * 1990-03-16 1992-05-19 Ecco Limited Varistor structures
JPH05136012A (ja) * 1991-11-15 1993-06-01 Rohm Co Ltd チツプタイプ電子部品の製造方法
EP0716429A2 (de) * 1994-12-09 1996-06-12 Harris Corporation Zinkphosphat-Beschichtung für Varistor und Verfahren zu ihrer Herstellung

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2044531A (en) * 1979-02-09 1980-10-15 Tdk Electronics Co Ltd Non-linear resistance elements and method for manufacturing same
US4316171A (en) * 1979-02-09 1982-02-16 Tdk Electronics Co., Ltd. Non-linear resistance elements and method for manufacturing same
GB2100246A (en) * 1981-06-16 1982-12-22 Armstrong World Ind Inc Phosphate ceramic materials
JPH01259506A (ja) * 1988-04-11 1989-10-17 Rohm Co Ltd 電子部品のニッケルメッキ方法
JPH03131004A (ja) * 1989-10-17 1991-06-04 Toshiba Corp 非直線抵抗体の製造方法
US5115221A (en) * 1990-03-16 1992-05-19 Ecco Limited Varistor structures
JPH0483302A (ja) * 1990-07-26 1992-03-17 Toshiba Corp 非直線抵抗体の製造方法
JPH05136012A (ja) * 1991-11-15 1993-06-01 Rohm Co Ltd チツプタイプ電子部品の製造方法
EP0716429A2 (de) * 1994-12-09 1996-06-12 Harris Corporation Zinkphosphat-Beschichtung für Varistor und Verfahren zu ihrer Herstellung

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 014, no. 016 (E - 872) 12 January 1989 (1989-01-12) *
PATENT ABSTRACTS OF JAPAN vol. 015, no. 343 (E - 1106) 30 August 1991 (1991-08-30) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 303 (E - 1228) 3 July 1992 (1992-07-03) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 514 (E - 1433) 16 September 1993 (1993-09-16) *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5757263A (en) * 1994-12-09 1998-05-26 Harris Corporation Zinc phosphate coating for varistor
GB2326976A (en) * 1997-06-30 1999-01-06 Harris Corp Varistor nickel barrier electrode
EP0969481A1 (de) * 1998-07-02 2000-01-05 Harris Corporation Zink-Phosphatbeschichtung für Varistor und Verfahren zur Herstellung
US6841191B2 (en) * 2002-02-08 2005-01-11 Thinking Electronic Industrial Co., Ltd. Varistor and fabricating method of zinc phosphate insulation for the same
US11037710B2 (en) 2018-07-18 2021-06-15 Avx Corporation Varistor passivation layer and method of making the same
CN113363029A (zh) * 2020-03-06 2021-09-07 立昌先进科技股份有限公司 电子组件封装结构及其制作方法

Also Published As

Publication number Publication date
ATE195198T1 (de) 2000-08-15
EP0806780B1 (de) 2000-08-02

Similar Documents

Publication Publication Date Title
EP0716429B1 (de) Zinkphosphat-Beschichtung für Varistor und Verfahren zu ihrer Herstellung
US6214685B1 (en) Phosphate coating for varistor and method
US4613518A (en) Monolithic capacitor edge termination
US6159768A (en) Array type multi-chip device and fabrication method therefor
CN102194570A (zh) 电容器及其制造方法
US6232144B1 (en) Nickel barrier end termination and method
JP3497840B2 (ja) ガラスコーティング膜を有するチップバリスタの製造方法
EP0806780B1 (de) Zink-Phosphatbeschichtung für Varistor und Verfahren zur Herstellung
US6841191B2 (en) Varistor and fabricating method of zinc phosphate insulation for the same
RU2159482C2 (ru) Соединительные выводы электронного компонента (варианты), электронный компонент (варианты) и способ его изготовления (варианты)
US4393438A (en) Porcelain coated metal boards having interconnections between the face and reverse surfaces thereof
US4618911A (en) End termination for chip capacitor
US6278065B1 (en) Apparatus and method for minimizing currents in electrical devices
EP0973176A1 (de) Anschlusskontakt mit Nickelbarriere und Verfahren
US4614995A (en) Hermetically sealed ceramic cased surface mount capacitor
US4450502A (en) Multilayer ceramic dielectric capacitors
JPS634327B2 (de)
GB2112419A (en) Coated electrical connection elements
JPH0127565Y2 (de)
WO2006102121A1 (en) High density interconnection device with dielectric coating
CN113363029A (zh) 电子组件封装结构及其制作方法
JPS6228746Y2 (de)
JPH0397212A (ja) チップ形固体電解コンデンサ
US20070269591A1 (en) Pad Metallisation Process
JPH03157909A (ja) 筒型セラミックコンデンサ

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE NL

17P Request for examination filed

Effective date: 19980428

17Q First examination report despatched

Effective date: 19980828

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: HARRIS IRELAND DEVELOPMENT COMPANY LIMITED

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: LITTLEFUSE, INC.

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE NL

REF Corresponds to:

Ref document number: 195198

Country of ref document: AT

Date of ref document: 20000815

Kind code of ref document: T

EN Fr: translation not filed
RAP2 Party data changed (patent owner data changed or rights of a patent transferred)

Owner name: LITTELFUSE, INC.

NLT2 Nl: modifications (of names), taken from the european patent patent bulletin

Owner name: LITTELFUSE, INC.

NLXE Nl: other communications concerning ep-patents (part 3 heading xe)

Free format text: PAT. BUL. 11/2000, PAGE 1524: CORR.: LITTELFUSE, INC

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20010514

Year of fee payment: 6

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: AT

Payment date: 20010528

Year of fee payment: 6

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: BE

Payment date: 20010620

Year of fee payment: 6

26N No opposition filed
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20020509

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20020531

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20021201

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 20021201