EP0800335B1 - Circuit for operating electric lamps - Google Patents

Circuit for operating electric lamps Download PDF

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Publication number
EP0800335B1
EP0800335B1 EP97104699A EP97104699A EP0800335B1 EP 0800335 B1 EP0800335 B1 EP 0800335B1 EP 97104699 A EP97104699 A EP 97104699A EP 97104699 A EP97104699 A EP 97104699A EP 0800335 B1 EP0800335 B1 EP 0800335B1
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EP
European Patent Office
Prior art keywords
circuit
transistor
parallel
control
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP97104699A
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German (de)
French (fr)
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EP0800335A2 (en
EP0800335A3 (en
Inventor
Bernd Rudolph
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Osram GmbH
Original Assignee
Patent Treuhand Gesellschaft fuer Elektrische Gluehlampen mbH
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Publication of EP0800335A3 publication Critical patent/EP0800335A3/en
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B41/00Circuit arrangements or apparatus for igniting or operating discharge lamps
    • H05B41/14Circuit arrangements
    • H05B41/26Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc
    • H05B41/28Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters
    • H05B41/282Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices
    • H05B41/2825Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices by means of a bridge converter in the final stage
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S315/00Electric lamp and discharge devices: systems
    • Y10S315/05Starting and operating circuit for fluorescent lamp
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S315/00Electric lamp and discharge devices: systems
    • Y10S315/07Starting and control circuits for gas discharge lamp using transistors

Definitions

  • the invention relates to a circuit arrangement for operating electrical Lamps according to the preamble of claim 1.
  • Such a circuit arrangement is, for example, in the European one Patent EP 0 093 469 discloses.
  • This document describes an inverter especially a self-oscillating half-bridge inverter with two alternating switching inverter transistors in their control circuit a time switch device is arranged in each case.
  • These timers consist essentially of an auxiliary transistor and an RC element, whose ohmic resistance is caused by a Zener diode is bridged, and its capacitor parallel to the base-emitter path of the auxiliary transistor is switched. Because of the Zener diodes they have Time switch devices voltage-dependent time constants, the one Control of the frequency and duty cycle of the half-bridge inverter as well as setting defined heating and ignition conditions for which enable low pressure discharge lamps.
  • the published patent application DE 38 41 095 A1 describes a circuit arrangement of a Half bridge inverter for the ignition and AC operation of Discharge lamps. To ignite the lamps with preheated electrodes too enable, are parallel to the emitter resistances of the half-bridge inverter transistors Darlington transistors connected, one of the Darlington transistors is connected to a timer, the input of a threshold switch is connected to one of the control transformer and the output of the threshold switch the power supply of the other Darlington transistor switches.
  • the published patent application EP 0 093 469 A2 discloses a half-bridge inverter to ignite and power a discharge lamp. In line with the discharge lamp the primary winding of a transformer is switched. The secondary windings of the transformer are with a voltage-dependent elements having time switch of a control device for the half-bridge inverter transistors connected.
  • the published patent application EP 0 541 908 A1 describes a circuit arrangement for Operation of one or more low-pressure discharge lamps with a half-bridge inverter. Parallel to the basic series resistors of the half-bridge inverter transistors a parallel branch is connected, each consisting of one Threshold switch and an ohmic resistance to the aforementioned Transistors during the ignition phase of the lamps with an additional positive To supply basic electricity.
  • the Circuit arrangement according to the invention when operating the above-mentioned fluorescent lamps on the one hand, satisfactory preheating of the lamp electrodes ensure and on the other hand avoid an excessive increase in the pin current.
  • the circuit arrangement according to the invention has a self-oscillating Half-bridge inverter, at the output of which is a resonant circuit trained load circuit is connected in which at least one electric lamp is arranged.
  • the two inverter transistors have a control circuit, in each of which an auxiliary transistor is connected.
  • these auxiliary transistors are in the control circuits of the Inverter transistors switched that the emitter or source resistance of these inverter transistors formed by a parallel connection is made up of at least one ohmic resistor and the parallel to it arranged control path of the corresponding auxiliary transistor.
  • the control inputs of the two auxiliary transistors are according to the invention connected to the output of a common control circuit.
  • the feedback the half-bridge inverter transistors can be changed by a suitable one Dimensioning of the ohmic resistances of the invention Parallel circuits, the emitter resistors or source resistors which form half-bridge inverter transistors, influence them within wide limits.
  • the parallel circuits according to the invention advantageously have the form the emitter resistances of the half-bridge inverter transistors, in each case at least one further ohmic resistance, which is in series with the Control path of the corresponding auxiliary transistor switched and parallel to the at least one ohmic resistance of the relevant parallel circuit is arranged.
  • the dimensioning of these ohmic resistors is advantageously chosen such that for each of the invention, the Emitter resistance of a half-bridge inverter transistor Parallel connections the total resistance of the parallel to the control path of the auxiliary transistor arranged ohmic resistances by approximately one Order of magnitude greater than the total resistance of the series to that Auxiliary transistor is switched ohmic resistors.
  • the auxiliary transistors are advantageously parallel to the control paths one capacitor each, to which in turn at least in each case a discharge resistor is connected in parallel.
  • the exit is the Control circuit each with at least one charging resistor Control inputs of the auxiliary transistors connected.
  • the resistance values of these charging resistors are smaller than the resistance values of the discharge resistors, so that the time constant for the discharge of the parallel capacitors connected to the auxiliary transistors considerably larger than is the time constant for the charging of these capacitors. It also takes place advantageously the connection in at least one auxiliary transistor to the output of the control circuit via at least one diode.
  • the half-bridge inverter transistors are advantageously bipolar transistors, while the auxiliary transistors advantageously field effect transistors are.
  • the preferred embodiment of the circuit arrangement according to the invention also has a voltage divider that has a tap is connected to a resonant circuit component in the load circuit and the voltage drop monitored on this component.
  • the control input one of the Auxiliary transistors are connected to the latter, advantageously via a threshold value element Voltage divider connected.
  • This voltage divider allows the electrical conductivity of the drain-source path of the aforementioned Auxiliary transistor depending on the voltage drop on the with Constantly vary voltage divider connected resonance circuit component. Thereby the effective emitter resistance of the corresponding one also changes Half-bridge inverter transistor steady.
  • the above Voltage divider also offers the option of reducing the voltage to regulate on the resonant circuit component in a continuous manner.
  • the figure shows the circuit arrangement according to the preferred embodiment.
  • This circuit arrangement is used to operate a T5 fluorescent lamp LP, which is an electrical power consumption (nominal power) of approximately 35 W.
  • Appropriate dimensioning of the electrical components of the preferred embodiment of the invention Circuit arrangement is given in the table.
  • This circuit arrangement has one with two npn bipolar transistors Q1, Q2 fitted self-oscillating half-bridge inverters.
  • the Half-bridge inverter is supplied with a DC voltage that is on is usually obtained by rectification from the mains voltage.
  • a resonance circuit trained load circuit connected at the output M of the half-bridge inverter. It contains the primary winding RKa of a toroidal transformer, a resonance inductance L1, the electrode coil E1 of the lamp LP, a resonance capacitor C1 and the Electrode filament E2 of the fluorescent lamp LP.
  • the discharge path of the Low pressure discharge lamp LP is parallel to the resonance capacitor C1 is switched.
  • the resonance capacitor C1 is also across the electrode coil E2 to the center tap V1 between the two coupling capacitors C2, C3 connected, which in turn are parallel to the half-bridge inverter Q1, Q2 are arranged.
  • the half-bridge inverter is controlled using the Toroidal transformer, whose primary winding RKa is part of the load circuit is, and the secondary windings RKb, RKc each in one Control circuit of the half-bridge inverter transistors Q1, Q2 arranged are.
  • the circuit arrangement has a starting device which essentially from the start capacitor C5, the diac DC, the diode D3 and the ohmic resistors R2, R12, R13, R14.
  • the two bipolar transistors Q1, Q2 of the half-bridge inverter are each with a pre-run diode D1, D2 equipped parallel to the collector-emitter path of the corresponding transistors Q1, Q2 are connected.
  • the control circuits of the two bipolar transistors Q1, Q2 each contain one Base series resistor R3 or R4, which has an inductance L2 or L3 with the secondary winding RKb or arranged in this control circuit RKc of the toroidal transformer is connected.
  • the emitter resistance of the Bipolar transistor Q1 is made by one of the ohmic resistors R5, R6 and the auxiliary transistor T1 existing parallel circuit is formed. This Parallel connection is carried out in such a way that the lower resistance R6 is arranged in series with the drain-source path of the auxiliary transistor T1 and the higher impedance resistor R5 in parallel with this from the resistor R6 and the drain-source path of the auxiliary transistor T1 existing Series connection is switched.
  • This parallel connection is also designed so that the lower resistance R8 arranged in series with the drain-source path of the auxiliary transistor T2 and the higher impedance resistor R7 is parallel to this from the resistor R8 and the drain-source path of the auxiliary transistor T2 existing Series connection is switched.
  • the control circuits of the two half-bridge inverter transistors Q1, Q2 also each have a base-emitter parallel resistor R9 or R10, which is parallel to the base-emitter path of the corresponding bipolar transistor Q1, Q2 is switched and that Switching behavior of these two bipolar transistors Q1, Q2 improved.
  • the two auxiliary transistors T1, T2 are field effect transistors, which are controlled with the aid of the control circuit IC.
  • To this Purpose is the output of the control circuit IC on the one hand via the ohmic Resistor R11 and diode D5 with the gate terminal of the field effect transistor T1 and on the other hand via the ohmic resistor R21 with the Gate connection of the field effect transistor T2 connected.
  • Parallel to the gate of the field effect transistor T1 and T2 are a capacitor C6 and C7 and an ohmic resistor R15 or R16 switched.
  • the circuit arrangement also has a voltage divider, which is essentially consists of resistors R17, R18 and R19.
  • This voltage divider is across capacitor C8 and branch point V2 with one connection of the resonance capacitor C1 and with one connection the lamp electrode E1 connected, so that the voltage divider alternating current is connected in parallel to the resonance capacitor C1.
  • the center tap V3 between the resistors R18, R19 of the voltage divider via a diode D6 and a Zener diode DZ with the gate terminal of Field effect transistor T2 connected.
  • the Zener diode DZ and the diode D6 are polarized in opposite directions.
  • the starting capacitor charges C5 through the resistors R12, R13 to the breakdown voltage of the Diacs DC on, which then triggers the base of the bipolar transistor Q2 generates and thereby the half-bridge inverter starts to oscillate causes.
  • the transistor Q2 is turned on, the starting capacitor Discharge C5 via resistor R2 and diode D3 until the diac DC does not generate any further trigger pulses.
  • the two inverter transistors Q1, Q2 switch alternately, so that the center tap M the half bridge alternating with the positive or negative pole of the DC voltage supply connected is.
  • the frequency of which is the clock frequency of the Half-bridge inverter.
  • the clock frequency of the half-bridge inverter is usually more than 20 kHz.
  • the electronic Components of the circuit arrangement according to the invention are also dimensioned so that the clock frequency of the self-oscillating half-bridge inverter above the resonance frequency of the series resonance circuit L1, C1 lies.
  • the auxiliary transistors T1, T2 are initially in the blocked state, so that as an emitter resistor for the bipolar transistors Q1, Q2 only the higher impedance resistors R5 and R7 are effective.
  • the control circuit IC switches its Output voltage from about 0 V to about 10 V to 12 V around, so that the Control voltage for switching the field effect transistor T2 over the Resistor R21 is built up on capacitor C7.
  • the discharge resistor R15 has a considerably higher resistance value than the charging resistor R11, the time constant of the capacitor C6 is essential for the discharge process larger than for the charging process, so that the capacitor C6 too then the control voltage required for switching Auxiliary transistor T1 is present when the duty cycle of the bipolar transistor Q2 has already ended.
  • the capacitor C6 is recharged via the resistor R11 and the diode D5.
  • the effective emitter resistance is for the bipolar transistors Q1 through the total or equivalent resistance given the now connected resistors R5 and R6, if you look at the resistance of the drain-source path of the auxiliary transistor T1 refrains.
  • the effective emitter resistance of the bipolar transistor Q2 which is turned on Auxiliary transistor T2 essentially from the equivalent resistance of the parallel resistors R7 and R8 results.
  • the clock frequency of the half-bridge inverter drops.
  • the upset between the clock frequency of the half-bridge inverter and the Resonance frequency of the resonance circuit L1, C1 drops so far that on Resonance capacitor C1 through the method of resonance exaggeration ignition voltage required to ignite the lamp LP is generated.
  • the resonance circuit components are C1, L1 dimensioned in the preferred embodiment such that only a relatively small pin current through the electrodes E1, E2 flows.
  • the resonant circuit of the preferred embodiment therefore has one a comparatively large resonance inductance L1 and one relative high goodness. Due to the high quality of the resonance circuit, the Build resonance circuit components C1, L1 a high voltage drop.
  • the Voltage divider R17, R18, R19 now offers together with the Zener diode DZ and the diode D6 an additional way to measure the voltage drop in the Limit or regulate resonance circuit C1, L1.
  • this voltage divider the voltage drop across the resonance capacitor C1 or the lamp LP detected and according to the resistance values of the ohmic resistors R17, R18, R19 divided.
  • the amplitude of the resonant capacitor voltage a critical value by appropriate dimensioning the voltage divider resistors to a desired one Value can be set, remains below the Zener diode DZ and hence the current path, which starts from the gate of the field effect transistor T2 via the Zener diode DZ and the resistor R19 to the negative pole the DC voltage source leads, de-energized and the field effect transistor T2 maintains its full control signal.
  • bipolar transistor Q2 On reduced control signal for the gate of the field effect transistor T2 reduced the conductivity of the drain-source path of the field effect transistor T2 and thus increases the effective emitter resistance of the bipolar transistor Q2.
  • the effective emitter resistance of bipolar transistor Q2 is calculated in this Fall from the no longer negligible resistance of the drain-source path of the auxiliary transistor T2 and the resistance values of the ohmic Resistors R7 and R8. This increase in the effective emitter resistance of transistor Q2 causes a reduced duty cycle of Bipolar transistor Q2 and increases the clock frequency of the half-bridge inverter accordingly, causing the open circuit voltage across the resonance capacitor is reduced.
  • the circuit arrangement according to the invention can also be used for dimming the lamp LP.
  • the control circuit IC is to be designed in such a way that it not only switches between two voltage stages 0 V and 12 V for driving the auxiliary transistors T1, T2, as described in the exemplary embodiment described above, but also provides a continuously variable output voltage after the lamp has been ignited ,
  • Dimensioning of the electrical components of the circuit arrangement according to the preferred embodiment R1 3.3 M ⁇ R2, R11 22 k ⁇ R3, R4 8.2 ⁇ R5 18 ⁇ R6, R8 1 ⁇ R7 15 ⁇ R9, R10 47 ⁇ R12, R13 560 k ⁇ R14 1 M ⁇ R15 220 k ⁇ R16 470 k ⁇ R17, R18 330 k ⁇ R19 56 k ⁇ R21 47 k ⁇ C1 3.3 nF C2, C3 200 nF C4 1.5 nF C5, C6, C7 100 nF

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  • Circuit Arrangements For Discharge Lamps (AREA)

Description

Die Erfindung betrifft eine Schaltungsanordnung zum Betrieb elektrischer Lampen gemäß dem Oberbegriff des Patentanspruches 1.The invention relates to a circuit arrangement for operating electrical Lamps according to the preamble of claim 1.

Eine derartige Schaltungsanordnung ist beispielsweise in der europäischen Patentschrift EP 0 093 469 offenbart. Diese Schrift beschreibt einen Wechselrichter, insbesondere einen selbstschwingenden Halbbrückenwechselrichter mit zwei alternierend schaltenden Wechselrichtertransistoren, in deren Steuerkreis jeweils eine Zeitschaltvorrichtung angeordnet ist. Diese Zeitschaltvorrichtungen bestehen im wesentlichen jeweils aus einem Hilfstransistor und einem RC-Glied, dessen ohmscher Widerstand durch eine Zenerdiode überbrückt wird, und dessen Kondensator parallel zur Basis-Emitter-Strecke des Hilfstransistors geschaltet ist. Aufgrund der Zenerdioden besitzen die Zeitschaltvorrichtungen spannungsabhängige Zeitkonstanten, die eine Steuerung der Frequenz und des Tastverhältnisses des Halbbrückenwechselrichters sowie das Einstellen definierter Heiz- und Zündbedingungen für die Niederdruckentladungslampen ermöglichen. Nachteilig wirkt sich hier allerdings die große Toleranzabhängigkeit der Elektrodenvorheiz-, Zündund Betriebsparameter von den verwendeten elektronischen Bauteilen aus. Während der Elektrodenvorheizphase wird eine unsymmetrische Steuerung des Halbbrückenwechselrichters angewendet. Aufgrund dessen liefert eine Schaltungsanordnung gemäß der EP 0 093 469 bei gleicher Dimensionierung der Lastkreisbauteile und bei gleicher Spannung an den Lampen während der Elektrodenvorheizphase einen geringeren Heizstrom als eine vergleichbare Schaltungsanordnung mit symmetrischer Ansteuerung des Halbbrückenwechselrichters. Dieser Nachteil der Schaltungsanordnung gemäß der in der vorgenannten Patentschrift beschriebenen Schaltungsanordnung tritt besonders bei den sogenannten T2- und T5-Leuchtstofflampen, die vergleichsweise empfindlichen Elektroden besitzen, hervor. Um mit der Schaltungsanordnung entsprechend der EP 0 093 469 auch für die vorgenannten Lampentypen eine ausreichende Vorheizung der Elektrodenwendeln zu gewährleisten, müßte ein Resonanzkondensator mit einer vergleichsweise großen Kapazität verwendet werden. Diese Maßnahme würde aber zu einer höheren Belastung der gesamten Bauteile der Schaltungsanordnung während des Brennbetriebes der Lampen führen. Insbesondere würde dann der sogenannte Stiftstrom, das ist der durch die Lampenelektrodenwendeln fließende Dauerheizstrom, der sich additiv aus dem Strom durch den parallel zur Lampe angeordneten Resonanzkondensator und aus dem über die Entladungsstrecke der Lampe fließenden Strom zusammensetzt, derart zunehmen, daß mit frühzeitigen Lampenausfällen, bedingt durch eine zu starke thermische Belastung der Elektrodenwendeln, gerechnet werden müßte.Such a circuit arrangement is, for example, in the European one Patent EP 0 093 469 discloses. This document describes an inverter especially a self-oscillating half-bridge inverter with two alternating switching inverter transistors in their control circuit a time switch device is arranged in each case. These timers consist essentially of an auxiliary transistor and an RC element, whose ohmic resistance is caused by a Zener diode is bridged, and its capacitor parallel to the base-emitter path of the auxiliary transistor is switched. Because of the Zener diodes they have Time switch devices voltage-dependent time constants, the one Control of the frequency and duty cycle of the half-bridge inverter as well as setting defined heating and ignition conditions for which enable low pressure discharge lamps. A disadvantage here however, the large tolerance dependency of the electrode preheating, ignition and Operating parameters from the electronic components used. During the electrode preheating phase there is an asymmetrical control of the half-bridge inverter applied. Because of this, one delivers Circuit arrangement according to EP 0 093 469 with the same dimensions the load circuit components and with the same voltage on the lamps during the electrode preheating phase has a lower heating current than a comparable one Circuit arrangement with symmetrical control of the half-bridge inverter. This disadvantage of the circuit arrangement according to that in the aforementioned Circuit arrangement described occurs particularly in the so-called T2 and T5 fluorescent lamps, the comparatively sensitive electrodes possess. In order with the circuit arrangement according to EP 0 093 469 Adequate preheating of the electrode filaments also for the aforementioned lamp types To ensure a resonance capacitor with a comparatively large capacity can be used. However, this measure would become one higher load on the entire components of the circuit arrangement during the Burning operation of the lamps. In particular, the so-called pen current, that is the continuous heating current flowing through the lamp electrode filaments, which is additive from the current through the resonance capacitor arranged parallel to the lamp and from the one flowing over the discharge path of the lamp Electricity, increase so that with premature lamp failures, conditional due to excessive thermal stress on the electrode coils should be.

Die Offenlegungsschrift DE 38 41 095 A1 beschreibt eine Schaltungsanordnung eines Halbbrückenwechselrichters für die Zündung und den Wechselstrombetrieb von Entladungslampen. Um eine Zündung der Lampen mit vorgeheizten Elektroden zu ermöglichen, sind parallel zu den Emitterwiderständen der Halbbrückenwechselrichtertransistoren Darlingtontransistoren geschaltet, wobei einer der Darlingtontransistoren an einen Zeitschalter angeschlossen ist, der Eingang eines Schwellwertschalters an eine des Steuertransformators geschaltet ist und der Ausgang des Schwellwertschalters die Stromversorgung des anderen Darlingtontransistors schaltet.The published patent application DE 38 41 095 A1 describes a circuit arrangement of a Half bridge inverter for the ignition and AC operation of Discharge lamps. To ignite the lamps with preheated electrodes too enable, are parallel to the emitter resistances of the half-bridge inverter transistors Darlington transistors connected, one of the Darlington transistors is connected to a timer, the input of a threshold switch is connected to one of the control transformer and the output of the threshold switch the power supply of the other Darlington transistor switches.

Die Offenlegungsschrift EP 0 093 469 A2 offenbart einen Halbbrückenwechselrichter zum Zünden und zur Stromversorgung einer Entladungslampe. In Reihe zur Entladungslampe ist die Primärwicklung eines Transformators geschaltet. Die Sekundärwicklungen des Transformators sind mit einem spannungsabhängige Elemente aufweisenden Zeitschalter einer Steuervorrichtung für die Halbbrückenwechselrichtertransistoren verbunden.The published patent application EP 0 093 469 A2 discloses a half-bridge inverter to ignite and power a discharge lamp. In line with the discharge lamp the primary winding of a transformer is switched. The secondary windings of the transformer are with a voltage-dependent elements having time switch of a control device for the half-bridge inverter transistors connected.

Die Offenlegungsschrift EP 0 541 908 A1 beschreibt eine Schaltungsanordnung zum Betrieb einer oder mehrerer Niederdruckentladungslampen mit einem Halbbrückenwechselrichter. Parallel zu den Basisvorwiderständen der Halbbrückenwechselrichtertransistoren ist jeweils ein Parallelzweig geschaltet, der jeweils aus einem Schwellwertschalter und einem ohmschen Widerstand besteht, um die vorgenannten Transistoren während der Zündphase der Lampen mit einem zusätzlichen positiven Basisstrom zu versorgen.The published patent application EP 0 541 908 A1 describes a circuit arrangement for Operation of one or more low-pressure discharge lamps with a half-bridge inverter. Parallel to the basic series resistors of the half-bridge inverter transistors a parallel branch is connected, each consisting of one Threshold switch and an ohmic resistance to the aforementioned Transistors during the ignition phase of the lamps with an additional positive To supply basic electricity.

Es ist die Aufgabe der Erfindung, eine einen selbstschwingenden Halbbrückenwechselrichter aufweisende Schaltungsanordnung zum Betrieb elektrischer Lampen mit einer verbesserten, auf die verschiedenen Betriebsphasen der Lampen abgestimmten Ansteuerung der Wechselrichtertransistoren bereitzustellen. Insbesondere soll die erfindungsgemäße Schaltungsanordnung beim Betrieb der obengenannten Leuchtstofflampen einerseits eine zufriedenstellende Vorheizung der Lampenelektroden gewährleisten und andererseits einen zu starken Anstieg des Stiftstromes vermeiden. It is the object of the invention to provide a self-oscillating half-bridge inverter having circuit arrangement for operating electrical lamps with an improved one, tailored to the different phases of lamp operation Provide control of the inverter transistors. In particular, the Circuit arrangement according to the invention when operating the above-mentioned fluorescent lamps on the one hand, satisfactory preheating of the lamp electrodes ensure and on the other hand avoid an excessive increase in the pin current.

Diese Aufgabe wird erfindungsgemäß durch die kennzeichnenden Merkmale des Patentanspruchs 1 gelöst. Besonders vorteilhafte Ausführungen der Erfindung sind in den Unteransprüchen beschrieben.This object is achieved by the characterizing features of claim 1 solved. Particularly advantageous versions of the Invention are described in the subclaims.

Die erfindungsgemäße Schaltungsanordnung weist einen selbstschwingenden Halbbrückenwechselrichter auf, an dessen Ausgang ein als Resonanzkreis ausgebildeter Lastkreis angeschlossen ist, in dem mindestens eine elektrische Lampe angeordnet ist. Die beiden Wechselrichtertransistoren besitzen einen Steuerkreis, in den jeweils ein Hilfstransistor geschaltet ist. Erfindungsgemäß sind diese Hilfstransistoren derart in die Steuerkreise der Wechselrichtertransistoren geschaltet, daß der Emitter- bzw. Sourcewiderstand dieser Wechselrichtertransistoren von einer Parallelschaltung gebildet wird, die aus mindestens einem ohmschen Widerstand und der parallel dazu angeordneten Steuerstrecke des entsprechenden Hilfstransistors besteht. Außerdem sind die Steuereingänge der beiden Hilfstransistoren erfindungsgemäß an den Ausgang einer gemeinsamen Steuerschaltung angeschlossen. Diese Maßnahmen erlauben es, den effektiven Emitterwiderstand bzw. Sourcewiderstand der Halbbrückenwechselrichtertransistoren und damit die Rückkoppelung für die Halbbrückenwechselrichtertransistoren in Abhängigkeit von den verschiedenen Betriebsphasen - das sind bei Niederdrukkentladungslampen: Vorheizung der Lampenelektroden, Zündung der Lampe, Brennbetrieb der Lampe- umzuschalten. Dieses Umschalten der Rückkoppelung für die Halbbrückenwechselrichtertransistoren verändert das Tastverhältnis und/ oder die Taktfrequenz des Halbbrückenwechselrichters. Die dadurch erzielbare Frequenzverstimmung zwischen der Resonanzfrequenz des Lastkreises und der Taktfrequenz des Halbbrückenwechselrichters ermöglicht für jede der drei vorgenannten Betriebsphase eine optimale Anpassung der elektrischen Parameter im Lastkreis. Die Rückkoppelung der Halbbrückenwechselrichtertransistoren läßt sich durch eine geeignete Dimensionierung der ohmschen Widerstände der erfindungsgemäßen Parallelschaltungen, die die Emitterwiderstände bzw. Sourcewiderstände der Halbbrückenwechselrichtertransistoren bilden, in weiten Grenzen beeinflußen.The circuit arrangement according to the invention has a self-oscillating Half-bridge inverter, at the output of which is a resonant circuit trained load circuit is connected in which at least one electric lamp is arranged. The two inverter transistors have a control circuit, in each of which an auxiliary transistor is connected. According to the invention, these auxiliary transistors are in the control circuits of the Inverter transistors switched that the emitter or source resistance of these inverter transistors formed by a parallel connection is made up of at least one ohmic resistor and the parallel to it arranged control path of the corresponding auxiliary transistor. In addition, the control inputs of the two auxiliary transistors are according to the invention connected to the output of a common control circuit. These measures allow the effective emitter resistance or Source resistance of the half-bridge inverter transistors and thus the Feedback for the half-bridge inverter transistors depending of the different operating phases - these are for low-pressure discharge lamps: Preheating the lamp electrodes, ignition of the Lamp to switch lamp operation. This switching of Feedback changed for the half-bridge inverter transistors the duty cycle and / or the clock frequency of the half-bridge inverter. The resulting frequency detuning between the resonance frequency the load circuit and the clock frequency of the half-bridge inverter enables an optimal one for each of the three operating phases mentioned above Adaptation of the electrical parameters in the load circuit. The feedback the half-bridge inverter transistors can be changed by a suitable one Dimensioning of the ohmic resistances of the invention Parallel circuits, the emitter resistors or source resistors which form half-bridge inverter transistors, influence them within wide limits.

Vorteilhafterweise besitzen die erfindungsgemäßen Parallelschaltungen, die die Emitterwiderstände der Halbbrückenwechselrichtertransistoren bilden, jeweils wenigstens einen weiteren ohmschen Widerstand, der in Serie zu der Steuerstrecke des entsprechenden Hilfstransistors geschaltet und parallel zu dem mindestens einen ohmschen Widerstand der betreffenden Parallelschaltung angeordnet ist. Die Dimensionierung dieser ohmschen Widerstände ist vorteilhafterweise derart gewählt, daß für jede der erfindungsgemäßen, den Emitterwiderstand eines Halbbrückenwechselrichtertransistors bildenden Parallelschaltungen der Gesamtwiderstand der parallel zur Steuerstrecke des Hilfstransistors angeordneten ohmschen Widerstände um ungefähr eine Größenordnung größer als der Gesamtwiderstand der in Serie zu dem Hilfstransistor geschalteten ohmschen Widerstände ist. Diese Maßnahmen gewährleisten, daß die Rückkoppelung des Halbbrückenwechselrichters in weiten Grenzen variiert werden kann.The parallel circuits according to the invention advantageously have the form the emitter resistances of the half-bridge inverter transistors, in each case at least one further ohmic resistance, which is in series with the Control path of the corresponding auxiliary transistor switched and parallel to the at least one ohmic resistance of the relevant parallel circuit is arranged. The dimensioning of these ohmic resistors is advantageously chosen such that for each of the invention, the Emitter resistance of a half-bridge inverter transistor Parallel connections the total resistance of the parallel to the control path of the auxiliary transistor arranged ohmic resistances by approximately one Order of magnitude greater than the total resistance of the series to that Auxiliary transistor is switched ohmic resistors. These measures ensure that the feedback of the half-bridge inverter in wide limits can be varied.

Vorteilhafterweise ist parallel zu den Steuerstrecken der Hilfstransistoren jeweils ein Kondensator angeordnet, zu denen wiederum jeweils mindestens ein Entladewiderstand parallel geschaltet ist. Außerdem ist der Ausgang der Steuerschaltung jeweils über mindestens einen Ladewiderstand mit den Steuereingängen der Hilfstransistoren verbunden. Die Widerstandswerte dieser Ladewiderstände sind kleiner als die Widerstandswerte der Entladewiderstände, so daß die Zeitkonstante für den Entladevorgang der parallel zu den Hilfstransistoren geschalteten Kondensatoren erheblich größer als die Zeitkonstante für den Ladevorgang dieser Kondensatoren ist. Ferner erfolgt vorteilhafterweise bei mindestens einem Hilfstransistor die Verbindung zum Ausgang der Steuerschaltung über mindestens eine Diode. Diese Maßnahmen gewährleisten eine zuverlässige Ansteuerung der Hilfstransistoren aus einer gemeinsamen Steuerschaltung.The auxiliary transistors are advantageously parallel to the control paths one capacitor each, to which in turn at least in each case a discharge resistor is connected in parallel. In addition, the exit is the Control circuit each with at least one charging resistor Control inputs of the auxiliary transistors connected. The resistance values of these charging resistors are smaller than the resistance values of the discharge resistors, so that the time constant for the discharge of the parallel capacitors connected to the auxiliary transistors considerably larger than is the time constant for the charging of these capacitors. It also takes place advantageously the connection in at least one auxiliary transistor to the output of the control circuit via at least one diode. These measures ensure reliable control of the auxiliary transistors from a common control circuit.

Die Halbbrückenwechselrichtertransistoren sind vorteilhafterweise Bipolartransistoren, während die Hilfstransistoren vorteilhafterweise Feldeffekttransistoren sind.The half-bridge inverter transistors are advantageously bipolar transistors, while the auxiliary transistors advantageously field effect transistors are.

Das bevorzugte Ausführungsbeispiel der erfindungsgemäßen Schaltungsanordnung weist außerdem einen Spannungsteiler auf, der über einen Abgriff im Lastkreis mit einem Resonanzkreisbauteil verbunden ist und den Spannungsabfall an diesem Bauteil überwacht. Der Steuereingang einer der Hilfstransistoren ist, vorteilhafterweise über ein Schwellwertelement, an diesen Spannungsteiler angeschlossen. Dieser Spannungsteiler erlaubt es, die elektrische Leitfähigkeit der Drain-Source-Strecke des vorgenannten Hilfstransistors in Abhängigkeit des Spannungsabfalls an dem mit dem Spannungsteiler verbundenen Resonanzkreisbauteil stetig zu variieren. Dadurch verändert sich auch der wirksame Emitterwiderstand des entsprechenden Halbbrückenwechselrichtertransistors stetig. Der obengenannte Spannungsteiler bietet also zusätzlich die Möglichkeit, den Spannungsabfall an dem Resonanzkreisbauteil in kontinuierlicher Weise zu regulieren.The preferred embodiment of the circuit arrangement according to the invention also has a voltage divider that has a tap is connected to a resonant circuit component in the load circuit and the voltage drop monitored on this component. The control input one of the Auxiliary transistors are connected to the latter, advantageously via a threshold value element Voltage divider connected. This voltage divider allows the electrical conductivity of the drain-source path of the aforementioned Auxiliary transistor depending on the voltage drop on the with Constantly vary voltage divider connected resonance circuit component. Thereby the effective emitter resistance of the corresponding one also changes Half-bridge inverter transistor steady. The above Voltage divider also offers the option of reducing the voltage to regulate on the resonant circuit component in a continuous manner.

Nachstehend wird die Erfindung anhand eines bevorzugten Ausführungsbeispiels näher erläutert.The invention based on a preferred embodiment explained in more detail.

Die Figur zeigt die Schaltungsanordnung gemäß des bevorzugten Ausführungsbeispiels. Diese Schaltungsanordnung dient zum Betrieb einer T5-Leuchtstofflampe LP, die eine elektrische Leistungsaufnahme (Nennleistung) von ungefähr 35 W besitzt. Eine geeignete Dimensionierung der elektrischen Bauteile des bevorzugten Ausführungsbeispiels der erfindungsgemäßen Schaltungsanordnung ist in der Tabelle angegeben.The figure shows the circuit arrangement according to the preferred embodiment. This circuit arrangement is used to operate a T5 fluorescent lamp LP, which is an electrical power consumption (nominal power) of approximately 35 W. Appropriate dimensioning of the electrical components of the preferred embodiment of the invention Circuit arrangement is given in the table.

Diese Schaltungsanordnung weist einen mit zwei npn-Bipolartransistoren Q1, Q2 bestückten selbstschwingenden Halbbrückenwechselrichter auf. Der Halbbrückenwechselrichter wird mit einer Gleichspannung versorgt, die auf übliche Weise durch Gleichrichtung aus der Netzspannung gewonnen wird. An den Ausgang M des Halbbrückenwechselrichters ist ein als Resonanzkreis ausgebildeter Lastkreis angeschlossen. Er enthält die Primärwicklung RKa eines Ringkerntransformators, eine Resonanzinduktivität L1, die Elektrodenwendel E1 der Lampe LP, einen Resonanzkondensator C1 und die Elektrodenwendel E2 der Leuchtstofflampe LP. Die Entladungsstrecke der Niederdruckentladungslampe LP ist parallel zum Resonanzkondensator C1 geschaltet ist. Der Resonanzkondensator C1 ist ferner über die Elektrodenwendel E2 an den Mittenabgriff V1 zwischen den beiden Koppelungskondensatoren C2, C3 angeschlossen, die ihrerseits parallel zum Halbbrückenwechselrichter Q1, Q2 angeordnet sind.This circuit arrangement has one with two npn bipolar transistors Q1, Q2 fitted self-oscillating half-bridge inverters. The Half-bridge inverter is supplied with a DC voltage that is on is usually obtained by rectification from the mains voltage. At the output M of the half-bridge inverter is a resonance circuit trained load circuit connected. It contains the primary winding RKa of a toroidal transformer, a resonance inductance L1, the electrode coil E1 of the lamp LP, a resonance capacitor C1 and the Electrode filament E2 of the fluorescent lamp LP. The discharge path of the Low pressure discharge lamp LP is parallel to the resonance capacitor C1 is switched. The resonance capacitor C1 is also across the electrode coil E2 to the center tap V1 between the two coupling capacitors C2, C3 connected, which in turn are parallel to the half-bridge inverter Q1, Q2 are arranged.

Die Ansteuerung des Halbbrückenwechselrichters erfolgt mit Hilfe des Ringkerntransformators, dessen Primärwicklung RKa Bestandteil des Lastkreises ist, und dessen Sekundärwicklungen RKb, RKc jeweils in einem Steuerkreis der Halbbrückenwechselrichtertransistoren Q1, Q2 angeordnet sind. Um das Anschwingen des Halbbrückenwechselrichters zu gewährleisten, besitzt die Schaltungsanordnung eine Startvorrichtung, die im wesentlichen aus dem Startkondensator C5, dem Diac DC, der Diode D3 und den ohmschen Widerständen R2, R12, R13, R14 besteht. Die beiden Bipolartransistoren Q1, Q2 des Halbbrückenwechselrichters sind jeweils mit einer Preilaufdiode D1, D2 ausgestattet, die parallel zur Kollektor-Emitter-Strecke des entsprechenden Transistors Q1, Q2 geschaltet sind. Parallel zur Freilaufdiode D1 sind ein ohmscher Widerstand R1 und ein Kondensator C4 angordnet. Soweit entspricht die Schaltungsanordnung einem selbstschwingenden, Halbbrückenwechselrichter wie er beispielsweise auf den Seiten 62-63 des Buches "Schaltnetzteile" von W. Hirschmann/ A. Hauenstein, Herausgeber Siemens AG offenbart ist.The half-bridge inverter is controlled using the Toroidal transformer, whose primary winding RKa is part of the load circuit is, and the secondary windings RKb, RKc each in one Control circuit of the half-bridge inverter transistors Q1, Q2 arranged are. To ensure that the half-bridge inverter starts up, the circuit arrangement has a starting device which essentially from the start capacitor C5, the diac DC, the diode D3 and the ohmic resistors R2, R12, R13, R14. The two bipolar transistors Q1, Q2 of the half-bridge inverter are each with a pre-run diode D1, D2 equipped parallel to the collector-emitter path of the corresponding transistors Q1, Q2 are connected. Parallel to the freewheeling diode D1 are arranged an ohmic resistor R1 and a capacitor C4. As far as the circuit arrangement corresponds to a self-oscillating, Half-bridge inverter like the one on pages 62-63 of the Book "Schaltnetzteile" by W. Hirschmann / A. Hauenstein, publisher Siemens AG is disclosed.

Die Steuerkreise der beiden Bipolartransistoren Q1, Q2 enthalten jeweils einen Basisvorwiderstand R3 bzw. R4, der über eine Induktivität L2 bzw. L3 mit der in diesem Steuerkreis angeordneten Sekundärwicklung RKb bzw. RKc des Ringkerntransformators verbunden ist. Der Emitterwiderstand des Bipolartransistors Q1 wird von einer aus den ohmschen Widerständen R5, R6 und dem Hilfstransistor T1 bestehenden Parallelschaltung gebildet. Diese Parallelschaltung ist derart ausgeführt, daß der niederohmigere Widerstand R6 in Serie zur Drain-Source-Strecke des Hilfstransistors T1 angeordnet ist und der hochohmigere Widerstand R5 parallel zu dieser aus dem Widerstand R6 und der Drain-Source-Strecke des Hilfstransistors T1 bestehenden Serienschaltung geschaltet ist. Analog dazu wird der Emitterwiderstand des Bipolartransistors Q2 von einer aus den ohmschen Widerständen R7, R8 und dem Hilfstransistor T2 bestehenden Parallelschaltung gebildet. Diese Parallelschaltung ist ebenfalls derart ausgeführt, daß der niederohmigere Widerstand R8 in Serie zur Drain-Source-Strecke des Hilfstransistors T2 angeordnet ist und der hochohmigere Widerstand R7 parallel zu dieser aus dem Widerstand R8 und der Drain-Source-Strecke des Hilfstransistors T2 bestehenden Serienschaltung geschaltet ist. Die Steuerkreise der beiden Halbbrükkenwechselrichtertransistoren Q1, Q2 weisen außerdem jeweils einen Basis-Emitter-Parallelwiderstand R9 bzw. R10 auf, der parallel zur Basis-Emitter-Strecke des entsprechenden Bipolartransistors Q1, Q2 geschaltet ist und das Schaltverhalten dieser beiden Bipolartransistoren Q1, Q2 verbessert.The control circuits of the two bipolar transistors Q1, Q2 each contain one Base series resistor R3 or R4, which has an inductance L2 or L3 with the secondary winding RKb or arranged in this control circuit RKc of the toroidal transformer is connected. The emitter resistance of the Bipolar transistor Q1 is made by one of the ohmic resistors R5, R6 and the auxiliary transistor T1 existing parallel circuit is formed. This Parallel connection is carried out in such a way that the lower resistance R6 is arranged in series with the drain-source path of the auxiliary transistor T1 and the higher impedance resistor R5 in parallel with this from the resistor R6 and the drain-source path of the auxiliary transistor T1 existing Series connection is switched. The emitter resistance of the Bipolar transistor Q2 from one of the ohmic resistors R7, R8 and the parallel transistor consisting of the auxiliary transistor T2. This parallel connection is also designed so that the lower resistance R8 arranged in series with the drain-source path of the auxiliary transistor T2 and the higher impedance resistor R7 is parallel to this from the resistor R8 and the drain-source path of the auxiliary transistor T2 existing Series connection is switched. The control circuits of the two half-bridge inverter transistors Q1, Q2 also each have a base-emitter parallel resistor R9 or R10, which is parallel to the base-emitter path of the corresponding bipolar transistor Q1, Q2 is switched and that Switching behavior of these two bipolar transistors Q1, Q2 improved.

Bei den beiden Hilfstransistoren T1, T2 handelt es sich um Feldeffekttransistoren, die mit Hilfe der Steuerschaltung IC angesteuert werden. Zu diesem Zweck ist der Ausgang der Steuerschaltung IC einerseits über den ohmschen Widerstand R11 und die Diode D5 mit dem Gate-Anschluß des Feldeffekttransistors T1 und andererseits über den ohmschen Widerstand R21 mit dem Gate-Anschluß des Feldeffekttransistors T2 verbunden. Parallel zum Gate des Feldeffekttransistors T1 bzw. T2 sind jeweils ein Kondensator C6 bzw. C7 und ein ohmscher Widerstand R15 bzw. R16 geschaltet. Außerdem ist parallel zum Gate jedes Hilfstransistors T1, T2 jeweils eine als Überspannungsschutz dienende Zenerdiode Z1, Z2 angeordnet.The two auxiliary transistors T1, T2 are field effect transistors, which are controlled with the aid of the control circuit IC. To this Purpose is the output of the control circuit IC on the one hand via the ohmic Resistor R11 and diode D5 with the gate terminal of the field effect transistor T1 and on the other hand via the ohmic resistor R21 with the Gate connection of the field effect transistor T2 connected. Parallel to the gate of the field effect transistor T1 and T2 are a capacitor C6 and C7 and an ohmic resistor R15 or R16 switched. Besides, is parallel to the gate of each auxiliary transistor T1, T2, one each as overvoltage protection serving Zener diode Z1, Z2 arranged.

Die Schaltungsanordnung besitzt ferner einen Spannungsteiler, der im wesentlichen aus den Widerständen R17, R18 und R19 besteht. Dieser Spannungsteiler ist über den Kondensator C8 und den Verzweigungspunkt V2 mit einem Anschluß des Resonanzkondensators C1 und mit einem Anschluß der Lampenelektrode E1 verbunden, so daß der Spannungsteiler wechselstrommäßig parallel zum Resonanzkondensator C1 geschaltet ist. Der Mittenabgriff V3 zwischen den Widerständen R18, R19 des Spannungsteilers ist über eine Diode D6 und eine Zenerdiode DZ mit dem Gate-Anschluß des Feldeffekttransistors T2 verbunden. Die Zenerdiode DZ und die Diode D6 sind gegensinnig gepolt.The circuit arrangement also has a voltage divider, which is essentially consists of resistors R17, R18 and R19. This voltage divider is across capacitor C8 and branch point V2 with one connection of the resonance capacitor C1 and with one connection the lamp electrode E1 connected, so that the voltage divider alternating current is connected in parallel to the resonance capacitor C1. The center tap V3 between the resistors R18, R19 of the voltage divider via a diode D6 and a Zener diode DZ with the gate terminal of Field effect transistor T2 connected. The Zener diode DZ and the diode D6 are polarized in opposite directions.

Nach dem Einschalten der Schaltungsanordnung lädt sich der Startkondensator C5 über die Widerstände R12, R13 auf die Durchbruchsspannung des Diacs DC auf, der dann Triggerimpulse für die Basis des Bipolartransistors Q2 erzeugt und dadurch das Anschwingen des Halbbrückenwechselrichters veranlaßt. Nach dem Durchschalten des Transistors Q2 wird der Startkondensator C5 über den Widerstand R2 und die Diode D3 soweit entladen, daß der Diac DC keine weiteren Triggerimpulse generiert. Die beiden Wechselrichtertransistoren Q1, Q2 schalten alternierend, so daß der Mittenabgriff M der Halbbrücke abwechselnd mit dem Plus- oder Minuspol der Gleichspannungsversorgung verbunden ist. Dadurch wird zwischen den Abgriffen M und V1 im als Serienresonanzkreis ausgebildeten Lastkreis ein mittelfrequenter Wechselstrom erzeugt, dessen Frequenz mit der Taktfrequenz des Halbbrückenwechselrichters übereinstimmt. Die Taktfrequenz des Halbbrückenwechselrichters beträgt üblicherweise mehr als 20 kHz. Die elektronischen Bauteile der erfindungsgemäßen Schaltungsanordnung sind außerdem so dimensioniert, daß die Taktfrequenz des selbstschwingenden Halbbrückenwechselrichter oberhalb der Resonanzfrequenz des Serienresonanzkreises L1, C1 liegt. Die Hilfstransistoren T1, T2 befinden sich zunächst im gesperrten Zustand, so daß als Emitterwiderstand für die Bipolartransistoren Q1, Q2 nur die hochohmigeren Widerstände R5 bzw. R7 wirksam sind. Diese vergleichsweise großen Emitterwiderstände R5, R7 verursachen eine relativ starke Gegenkoppelung des Halbbrückenwechselrichters. Dadurch erreicht der Ringkerntransformator bereits innerhalb einer vergleichsweise kurzen Zeitspanne seine Sättigungsmagnetisierung, so daß die Taktfrequenz des Halbbrückenwechselrichters entsprechend hoch ist. Die Taktfrequenz des Halbbrückenwechselrichters liegt damit zunächst so weit oberhalb der Resonanzfrequenz des Resonanzkreises L1, C1, daß der sich am Resonanzkondensator C1 aufbauende Spannungsabfall nicht ausreicht, um die Leuchtstofflampe LP zu zünden. Während dieser unmittelbar nach dem Anschwingen des Halbbrückenwechselrichters stattfindenden Elektrodenvorheizphase fließt durch die Elektrodenwendeln E1, E2 der Lampe LP und über den Resonanzkondensator C1 ein mittelfrequenter Heizstrom, der die Elektrodenwendeln E1, E2 erhitzt. Nach Ablauf der durch die Steuerschaltung IC vorbestimmten Vorheizdauer schaltet die Steuerschaltung IC ihre Ausgangsspannung von ca. 0 V auf ungefähr 10 V bis 12 V um, so daß die Steuerspannung zum Durchschalten des Feldeffekttransistors T2 über den Widerstand R21 am Kondensator C7 aufgebaut wird.After switching on the circuit arrangement, the starting capacitor charges C5 through the resistors R12, R13 to the breakdown voltage of the Diacs DC on, which then triggers the base of the bipolar transistor Q2 generates and thereby the half-bridge inverter starts to oscillate causes. After the transistor Q2 is turned on, the starting capacitor Discharge C5 via resistor R2 and diode D3 until the diac DC does not generate any further trigger pulses. The two inverter transistors Q1, Q2 switch alternately, so that the center tap M the half bridge alternating with the positive or negative pole of the DC voltage supply connected is. As a result, between the taps M and V1 in the load circuit designed as a series resonant circuit is a medium frequency Generates alternating current, the frequency of which is the clock frequency of the Half-bridge inverter. The clock frequency of the half-bridge inverter is usually more than 20 kHz. The electronic Components of the circuit arrangement according to the invention are also dimensioned so that the clock frequency of the self-oscillating half-bridge inverter above the resonance frequency of the series resonance circuit L1, C1 lies. The auxiliary transistors T1, T2 are initially in the blocked state, so that as an emitter resistor for the bipolar transistors Q1, Q2 only the higher impedance resistors R5 and R7 are effective. These comparatively large emitter resistors R5, R7 cause one relatively strong negative feedback of the half-bridge inverter. Thereby the toroidal transformer already reaches within a comparatively short period of time its saturation magnetization, so that the clock frequency of the half-bridge inverter is correspondingly high. The clock frequency of the half-bridge inverter is initially so far above that Resonance frequency of the resonance circuit L1, C1, that of the resonance capacitor C1 build-up voltage drop is not sufficient to the Ignite fluorescent lamp LP. During this immediately after the start of the half-bridge inverter, the electrode preheating phase flows through the electrode filaments E1, E2 of the lamp LP and a medium-frequency heating current via the resonance capacitor C1, which the Electrode filaments E1, E2 heated. After the expiry of the control circuit IC predetermined preheating time, the control circuit IC switches its Output voltage from about 0 V to about 10 V to 12 V around, so that the Control voltage for switching the field effect transistor T2 over the Resistor R21 is built up on capacitor C7.

Während der Transistor Q2 eingeschaltet ist, das heißt, während der Mittenabgriff M des Halbbrückenwechselrichters auf Massepotential liegt, baut sich analog dazu über den Widerstand R11 und über die Diode D5 am Kondensator C6 die Steuerspannung zum Durchschalten des Feldeffekttransistors T1 auf. Während der Bipolartransistor Q2 eingeschaltet ist wird der Kondensator C6 von der Steuerschaltung IC über den Ladewiderstand R11 und über die Diode D5 auf die zum Durchschalten des Hilfstransistors T1 erforderliche Steuerspannung aufgeladen. Da der Entladewiderstand R15 einen erheblich größeren Widerstandswert als der Ladewiderstand R11 besitzt, ist die Zeitkonstante des Kondensators C6 für den Entladevorgang wesentlich größer als für den Ladevorgang, so daß am Kondensator C6 auch dann noch die zum Durchschalten erforderliche Steuerspannung für den Hilfstransistor T1 anliegt, wenn die Einschaltdauer des Bipolartransistors Q2 bereits beendet ist. In jeder Einschaltphase des Bipolartransistors Q2 wird der Kondensator C6 über den Widerstand R11 und die Diode D5 nachgeladen.While transistor Q2 is on, that is, during center tap M of the half-bridge inverter is at ground potential analogous to this via the resistor R11 and the diode D5 on the capacitor C6 the control voltage for switching on the field effect transistor T1 on. While the bipolar transistor Q2 is turned on Capacitor C6 from the control circuit IC through the charging resistor R11 and via the diode D5 to the for switching on the auxiliary transistor T1 required control voltage is charged. Since the discharge resistor R15 has a considerably higher resistance value than the charging resistor R11, the time constant of the capacitor C6 is essential for the discharge process larger than for the charging process, so that the capacitor C6 too then the control voltage required for switching Auxiliary transistor T1 is present when the duty cycle of the bipolar transistor Q2 has already ended. In each switch-on phase of the bipolar transistor Q2 the capacitor C6 is recharged via the resistor R11 and the diode D5.

Bei durchgeschaltetem Feldeffekttransistoren T1 ist der wirksame Emitterwiderstand für den Bipolartransistoren Q1 durch den Gesamt- oder Ersatzwiderstand der nun parallel geschalteten Widerstände R5 und R6 gegeben, wenn man von dem Widerstand der Drain-Source-Strecke des Hilfstransistors T1 absieht. Dasselbe gilt in ähnlicher Weise für den wirksamen Emitterwiderstand des Bipolartransistors Q2, der sich bei durchgeschaltetem Hilfstransistor T2 im wesentlichen aus dem Ersatzwiderstand der Parallelwiderstände R7 und R8 ergibt. Aufgrund des nun erheblich niedrigeren effektiven Emitterwiderstandes der Bipolartransistoren Q1, Q2 und der daraus resultierenden verminderten Gegenkoppelung des Halbbrückenwechselrichters sinkt die Taktfrequenz des Halbbrückenwechselrichters. Die Verstimmung zwischen der Taktfrequenz des Halbbrückenwechselrichters und der Resonanzfrequenz des Resonanzkreises L1, C1 sinkt dabei soweit, daß am Resonanzkondensator C1 durch die Methode der Resonanzüberhöhung die zur Zündung der Lampe LP erforderliche Zündspannung erzeugt wird. When the field effect transistors T1 are switched on, the effective emitter resistance is for the bipolar transistors Q1 through the total or equivalent resistance given the now connected resistors R5 and R6, if you look at the resistance of the drain-source path of the auxiliary transistor T1 refrains. The same applies in a similar way to the effective emitter resistance of the bipolar transistor Q2, which is turned on Auxiliary transistor T2 essentially from the equivalent resistance of the parallel resistors R7 and R8 results. Because of the significantly lower effective Emitter resistance of the bipolar transistors Q1, Q2 and the resulting ones resulting reduced negative feedback of the half-bridge inverter the clock frequency of the half-bridge inverter drops. The upset between the clock frequency of the half-bridge inverter and the Resonance frequency of the resonance circuit L1, C1 drops so far that on Resonance capacitor C1 through the method of resonance exaggeration ignition voltage required to ignite the lamp LP is generated.

Nach dem Durchzünden der Lampe LP stellt die dann elektrisch leitfähige Entladungsstrecke der Lampe LP einen Nebenschluß zum Resonanzkondensator C1 dar, so daß über den Resonanzkondenator C1 nur noch die Betriebsspannung der Lampe LP abfällt.After the lamp LP has been ignited, it is then electrically conductive Discharge path of the lamp LP shunts to the resonance capacitor C1 represents, so that only the operating voltage via the resonance capacitor C1 the lamp LP falls off.

Wegen der empfindlichen Elektroden E1, E2 der Lampe LP sind die Resonanzkreisbauteile C1, L1 im bevorzugten Ausführungsbeispiel so dimensioniert, daß nur ein relativ geringer Stiftstrom durch die Elektroden E1, E2 fließt. Der Resonanzkreis des bevorzugten Ausführungsbeispiels besitzt daher eine eine vergleichsweise große Resonanzinduktivität L1 und eine relativ hohe Güte. Aufgrund der hohen Güte des Resonanzkreises kann sich an den Resonanzkreisbauteilen C1, L1 ein hoher Spannungsabfall aufbauen. Der Spannungsteiler R17, R18, R19 bietet nun zusammen mit der Zenerdiode DZ und der Diode D6 eine zusätzliche Möglichkeit, den Spannungsabfall im Resonanzkreis C1, L1 zu begrenzen bzw. zu regulieren.Because of the sensitive electrodes E1, E2 of the lamp LP, the resonance circuit components are C1, L1 dimensioned in the preferred embodiment such that only a relatively small pin current through the electrodes E1, E2 flows. The resonant circuit of the preferred embodiment therefore has one a comparatively large resonance inductance L1 and one relative high goodness. Due to the high quality of the resonance circuit, the Build resonance circuit components C1, L1 a high voltage drop. The Voltage divider R17, R18, R19 now offers together with the Zener diode DZ and the diode D6 an additional way to measure the voltage drop in the Limit or regulate resonance circuit C1, L1.

Am Abgriff V2 im Serienresonanzkreis wird von diesem Spannungsteiler der Spannungsabfall am Resonanzkondensator C1 bzw. an der Lampe LP detektiert und entsprechend der Widerstandswerte der ohmschen Widerstände R17, R18, R19 heruntergeteilt. Solange die Amplitude der Resonanzkondensatorspannung einen kritischen Wert, der durch eine geeignete Dimensionierung der Spannungsteilerwiderstände auf einen gewünschten Wert eingestellt werden kann, unterschreitet bleibt die Zenerdiode DZ und damit auch der Strompfad, der ausgehend vom Gate des Feldeffekttransistors T2 über die Zenerdiode DZ und den Widerstand R19 zum Minuspol der Gleichspannungsquelle führt, stromlos und der Feldeffekttransistor T2 behält sein volles Steuersignal. Erreicht die Amplitude der Resonanzkondensatorspannung diesen kritischen Wert, so steigt beim Durchlaufen der negativen Halbwelle der Resonanzkondensatorspannung der Spannungsabfall zwischen dem Gate des Feldeffekttransistors T2 und dem Verzweigungspunkt V3 so weit an, daß die Zenerdiode DZ leitfähig wird. Das hat zur Folge, daß das Gate des Feldeffekttransistors T2 nur noch ein reduziertes Steuersignal erhält, da ein Teil des von der Steuerschaltung IC kommenden Steuersignals über die nun leitfähige Zenerdiode DZ und den Spannungsteilerwiderstand R19 zum Minuspol der Gleichspannungsquelle abfließt. Die Gleichrichterdiode D6 ist so gepolt, daß die Zenerdiode DZ nur auf die negative Halbwelle der Resonanzkondensatorspannung sensitiv reagiert. Ein reduziertes Steuersignal für das Gate des Feldeffekttransistors T2 verringert die Leitfähigkeit der Drain-Source-Strecke des Feldeffekttransistors T2 und erhöht so den wirksamen Emitterwiderstand des Bipolartransistors Q2. Der effektive Emitterwiderstand des Bipolartransistors Q2 berechnet sich in diesem Fall aus dem nicht mehr zu vernachlässigenden Widerstand der Drain-Source-Strecke des Hilfstransistors T2 und den Widerstandswerten der ohmschen Widerstände R7 und R8. Diese Erhöhung des effektiven Emitterwiderstandes des Transistors Q2 bewirkt eine verkürzte Einschaltdauer des Bipolartransistors Q2 und vergrößert die Taktfrequenz des Halbbrückenwechselrichters entsprechend, wodurch die Leerlaufspannung am Resonanzkondensator reduziert wird.At the tap V2 in the series resonance circuit this voltage divider the voltage drop across the resonance capacitor C1 or the lamp LP detected and according to the resistance values of the ohmic resistors R17, R18, R19 divided. As long as the amplitude of the resonant capacitor voltage a critical value by appropriate dimensioning the voltage divider resistors to a desired one Value can be set, remains below the Zener diode DZ and hence the current path, which starts from the gate of the field effect transistor T2 via the Zener diode DZ and the resistor R19 to the negative pole the DC voltage source leads, de-energized and the field effect transistor T2 maintains its full control signal. Reaches the amplitude of the resonant capacitor voltage this critical value, the negative half wave of the resonant capacitor voltage the voltage drop between the gate of field effect transistor T2 and the branch point V3 so far that the Zener diode DZ becomes conductive. That has As a result, the gate of the field effect transistor T2 is only a reduced one Control signal received because part of the coming from the control circuit IC Control signal via the now conductive Zener diode DZ and the voltage divider resistor R19 flows to the negative pole of the DC voltage source. The Rectifier diode D6 is polarized so that the Zener diode DZ only on the negative Half-wave of the resonance capacitor voltage reacts sensitively. On reduced control signal for the gate of the field effect transistor T2 reduced the conductivity of the drain-source path of the field effect transistor T2 and thus increases the effective emitter resistance of the bipolar transistor Q2. The effective emitter resistance of bipolar transistor Q2 is calculated in this Fall from the no longer negligible resistance of the drain-source path of the auxiliary transistor T2 and the resistance values of the ohmic Resistors R7 and R8. This increase in the effective emitter resistance of transistor Q2 causes a reduced duty cycle of Bipolar transistor Q2 and increases the clock frequency of the half-bridge inverter accordingly, causing the open circuit voltage across the resonance capacitor is reduced.

Die Erfindung beschränkt sich nicht auf das oben näher erläuterte Ausführungsbeispiel. Beispielsweise kann die erfindungsgemäße Schaltungsanordnung auch zum Dimmen der Lampe LP genutzt werden. Zu diesem Zweck ist die Steuerschaltung IC derart auszubilden, daß sie zur Ansteuerung der Hilfstransistoren T1, T2 nicht nur zwischen zwei Spannungstufen 0 V und 12 V umschaltet, wie beim Ausführungsbeispiel oben beschrieben wurde, sondern außerdem nach dem Zünden der Lampe eine kontinuierlich veränderbare Ausgangsspannung bereitstellt. Dimensionierung der elektrischen Bauteile der Schaltungsanordnung gemäß des bevorzugten Ausführungsbeispiels R1 3,3 MΩ R2, R11 22 kΩ R3, R4 8,2 Ω R5 18 Ω R6, R8 1 Ω R7 15 Ω R9, R10 47 Ω R12, R13 560 kΩ R14 1 MΩ R15 220 kΩ R16 470 kΩ R17, R18 330 kΩ R19 56 kΩ R21 47 kΩ C1 3,3 nF C2, C3 200 nF C4 1,5 nF C5, C6, C7 100 nF C8 100 pF L1 4 mH L2, L3 10 µH D1, D2, D3, D5 1N4946GP D6 1N414B Z1, Z2 Zenerdiode, 12 V DZ Zenerdiode, 39 V DC Diac Q1, Q2 BUF 620 T1, T2 STK14N05 IC Timer, IC 40106 RKa, RKb, RKc Ringkern R8/4/3,8 The invention is not limited to the exemplary embodiment explained in more detail above. For example, the circuit arrangement according to the invention can also be used for dimming the lamp LP. For this purpose, the control circuit IC is to be designed in such a way that it not only switches between two voltage stages 0 V and 12 V for driving the auxiliary transistors T1, T2, as described in the exemplary embodiment described above, but also provides a continuously variable output voltage after the lamp has been ignited , Dimensioning of the electrical components of the circuit arrangement according to the preferred embodiment R1 3.3 MΩ R2, R11 22 kΩ R3, R4 8.2 Ω R5 18 Ω R6, R8 1 Ω R7 15 Ω R9, R10 47 Ω R12, R13 560 kΩ R14 1 MΩ R15 220 kΩ R16 470 kΩ R17, R18 330 kΩ R19 56 kΩ R21 47 kΩ C1 3.3 nF C2, C3 200 nF C4 1.5 nF C5, C6, C7 100 nF C8 100 pF L1 4 mH L2, L3 10 µH D1, D2, D3, D5 1N4946GP D6 1N414B Z1, Z2 Zener diode, 12 V DZ Zener diode, 39 V DC diac Q1, Q2 BUF 620 T1, T2 STK14N05 IC Timer, IC 40106 RKa, RKb, RKc Toroidal core R8 / 4 / 3.8

Claims (6)

  1. Circuit arrangement for operating electric lamps, the circuit arrangement having the following features:
    a free-running half-bridge inverter with two alternately switching inverter transistors (Q1, Q2),
    a first auxiliary transistor (T1) which is connected into the control circuit of the first half-bridge inverter transistor (Q1),
    the emitter or source impedance of the first half-bridge inverter transistor (Q1) is formed by a parallel circuit (R5, T1) which consists of at least one resistor (R5) and the control path, arranged in parallel therewith, of the first auxiliary transistor (T1),
    a second auxiliary transistor (T2) which is connected into the control circuit of the second half-bridge inverter transistor (Q2),
    the emitter or source impedance of the second half-bridge inverter transistor (Q2) is formed by a parallel circuit (R7, T2) which consists of at least one resistor (R7) and the control path, arranged in parallel therewith, of the second auxiliary transistor (T2),
    a load circuit which is connected to the output (M) of the inverter, is designed as a resonant circuit and into which at least one electric lamp (LP) is connected,
    characterized in that
    a capacitor (C6, C7) is in each case arranged in parallel with the control paths of the auxiliary transistors (T1, T2) and at at least one discharge resistor (R15, R16) is in each case connected in parallel with the capacitors (C6, C7),
    the control inputs of the two auxiliary transistors (T1, T2) are connected to the output of a common control circuit (IC) by the output of the control circuit (IC) in each case being connected via at least one charging resistor (R11, R21) to the control inputs of the auxiliary transistors (T1, T2), the resistances of these charging resistors (R11, R21) being smaller than the resistances of the discharge resistors (R15, R16), and wherein
    in the case of at least one auxiliary transistor (T1), connection to the output of the control circuit (IC) takes place via at least one diode (D5).
  2. Circuit arrangement according to Claim 1, characterized in that the auxiliary transistors (T1, T2) are field-effect transistors.
  3. Circuit arrangement according to Claim 1, characterized in that the two parallel circuits (R5, T1; R7; T2) in each case have at least one further resistor (R6; R8) which is connected in series with the control path of the corresponding auxiliary transistor (T1; T2) and in parallel with the at least one resistor (R5; R7) of the relevant parallel circuit (R5, T1; R7; T2).
  4. Circuit arrangement according to Claim 1, characterized in that the control input of at least one auxiliary transistor (T2) is connected to a voltage divider (R17, R18, R19) which is connected, via a branch point (V2) in the load circuit, to a resonant circuit component (C1).
  5. Circuit arrangement according to Claim 4, characterized in that the control input of the at least one auxiliary transistor (T2) is connected, via a threshold-value element (DZ), to the voltage divider (R17, R18, R19).
  6. Circuit arrangement according to Claim 1, characterized in that, during normal operation of the lamp (LP), the control circuit (IC) produces a continuously variable output voltage.
EP97104699A 1996-04-03 1997-03-19 Circuit for operating electric lamps Expired - Lifetime EP0800335B1 (en)

Applications Claiming Priority (2)

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DE19613149 1996-04-03
DE19613149A DE19613149A1 (en) 1996-04-03 1996-04-03 Circuit arrangement for operating electric lamps

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EP0800335A3 EP0800335A3 (en) 1999-05-06
EP0800335B1 true EP0800335B1 (en) 2002-11-27

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US5831396A (en) 1998-11-03
DE59708791D1 (en) 2003-01-09
EP0800335A2 (en) 1997-10-08
EP0800335A3 (en) 1999-05-06
DE19613149A1 (en) 1997-10-09
CA2201537C (en) 2004-09-14
CA2201537A1 (en) 1997-10-03

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