EP0792515A1 - Procede de fabrication d'une suspension chimio-mecanique destinee au polissage et la suspension elle-meme - Google Patents

Procede de fabrication d'une suspension chimio-mecanique destinee au polissage et la suspension elle-meme

Info

Publication number
EP0792515A1
EP0792515A1 EP95938941A EP95938941A EP0792515A1 EP 0792515 A1 EP0792515 A1 EP 0792515A1 EP 95938941 A EP95938941 A EP 95938941A EP 95938941 A EP95938941 A EP 95938941A EP 0792515 A1 EP0792515 A1 EP 0792515A1
Authority
EP
European Patent Office
Prior art keywords
cmp
slurry
surfactant
abrasive particles
ferric salt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP95938941A
Other languages
German (de)
English (en)
Inventor
Steven C. Avanzino
Christy Mei-Chu Woo
Diana M. Schonauer
Peter Austin Burke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of EP0792515A1 publication Critical patent/EP0792515A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Definitions

  • a polishing slurry composition and its method of making for planarization of silicon semiconductor wafers by mechanical polishing of the wafer More particularly,
  • composition for polishing a wafer having tungsten lines and vias through silicon dioxide dielectric layers where the slurry has a high removal rate selectivity for the tungsten in relation to the silicon dioxide removal rate.
  • Integrated circuit complexity has continued to evolve placing increasingly more demanding speci ications on the processes used in their manufacture.
  • the requirement for increasing the density of active devices on an individual chip has escalated, the requirement for greater flatness, over long distance and short distance, on the surfaces, top and bottom, of the wafer has also evolved.
  • a flat surface is desirable for several reasons. Flatness is a requirement for cooperation with the optical focusing characteristics of optical stepper devices. As the optical lens requirements for increased resolution has increased, the depth of field of the lens has decreased. Also, attachment of the interconnection metallization to their underlayer is improved if the metal is not required to pass over abrupt underlying steps. In addition, flatness improves ability to fill via holes and lines through apertures in the dielectric.
  • CMP chemical-mechanical polishing
  • CMP enhances the removal of surface material over large distances and short distances by simultaneously abrading the surface while a chemical etchant selectively attacks the surface.
  • CMP is becoming a preferred method of planarizing tungsten interconnects, vias and contacts.
  • CMP tungsten processing has shown significantly improved process windows and defect levels over standard tungsten dry etch-back processing.
  • One significant advantage of CMP tungsten processing is that it has a highly selective polish rate for tungsten as compared to the dielectric. This selectivity allows for over-polishing while still achieving a flat tungsten
  • a feature of this invention is that it provides a stable polish rate over a wide
  • FIG. 2 is a normalized plot of removal rate for various wt% of Fe(NO 3 ) 3 •
  • FIG. 3 is a chart depicting the average total defect count for slurries made by different mixing sequences.
  • FIG. 4 is a chart depicting the oxide removal rate and tungsten selectivity for different slurry batches.
  • FIG. 5 is chart of tungsten removal rate and uniformity for different ferric salt oxidizers.
  • FIG. 6 is a graph of the general shape of the change in defect count as a function of aging for the slurry of this invention.
  • Our slurry comprises abrasive particles of a selected diameter, a ferric salt oxidizer and a suspension agent. We have also discovered that it is beneficial to follow an order of adding and of mixing the slurry components for optimum results.
  • the suspension agent should be mixed thoroughly with the abrasive particle aqueous concentrate before adding diluted oxidizer up to the final volume.
  • planarization results can be still further improved if the completely mixed slurry is allowed to age for one day or more before being used in that scratch count is still further diminished. While one day of aging improves the scratch results, significant further improvement is obtained with longer aging of more than three days
  • the abrasive particles can be any of the commonly used abrasives such as alumina ( Al 2 O 3 ), silicon carbide (SiC), Ceria (CeO 2 ), silicon nitride (Si 3 N 4 ) and silicon dioxide (SiO 2 ).
  • alumina Al 2 O 3
  • SiC silicon carbide
  • CeO 2 Ceria
  • Si 3 N 4 silicon nitride
  • SiO 2 silicon dioxide
  • the median diameter of the prior art slurry particles are 0.400 microns, but for our slu ⁇ y we prefer a median particle size of less than 0.4 microns, preferably 0.220 microns.
  • the preferred distribution of particle size is much tighter than in the prior art also.
  • Our preferred distribution is a one sigma deviation of 0.050 microns or less. We have determined through experimentation that both of these dimensions are important to
  • the particle sizes used in prior CMP slurries were in the range of 0.4 to 0.7 micron diameter or larger with little attention to the tightness of the distribution.
  • the preferred oxidizer is a ferric salt, selected from the group consisting of Fe(NO 3 ) 3 • 9H,O, FeCl 3 • 6H 2 O, Fej(SO 4 ) 3 • 5H 2 O, and FeNH 4 (SO 4 ) 2 • 12H 2 O.
  • the suspension agent is preferably an aqueous based surfactant to improve the colloidal behavior of the abrasive particles in the H 2 O system. For the purposes of this
  • the suspension agent can also be formulated from the following classes: 1 ) glycols such as ethylene glycol, propylene glycol and glycerol;
  • polyethcrs such as polyethylene glycol
  • the oxidizer component has other members of the class. Representative
  • Fe (III) compounds such as the following: Ferric chloride hexahydrate, FeCl, • 6H,O
  • Dummy Wafers Tungsten Dummy wafers identical to test monitors described above, except for the W thickness pre- measurement. Oxide dummv wafers coated with 2500 A
  • Metrology tool Prometrix RS-55. Pre and post polish measurements taken on 49 sites across each wafer with 9mm edge exclusion. Slurry agitation: Constant agitation during testing. PROCESS PARAMETERS
  • Process Cycle variable time, 5 psi, 25 rpm carrier, 100 rpm table, 150 ml/min slu ⁇ y flow.
  • Loading Sequence For each of seven slurry mixture text compositions selected, perform polish test on 8 tungsten dummy wafers for 220 sec and 4 tungsten Test Monitor wafers for 60 seconds.
  • Test Compositions Al 2 O 3 -- 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt% and 7 wt%.
  • the Fe(NO 3 ) 3 • 9H 2 O is fixed at 5 wt% for all slurries used in Experiment 1. This experiment, as shown in FIG. 1, has a nearly constant W removal rate of 450 ⁇ A/min — 490 ⁇ A/min from 2-6 wt% of abrasion particles of Al,O 3 . Below 2 wt%
  • the removal rate is substantially reduced.
  • the removal rate is essentially independent of the alumina concentration. This suggests that the removal rate depends more on the oxidation rate of the elemental tungsten near the surface and that at these wt% of particles the tungsten oxide is being removed about as fast as its being formed. It is not understood why the curve shows a removal rate drop-off at the percentages above 6 wt%.
  • the prior CMP tungsten polishing publications teach that the polishing rate is linearly proportional to the concentration of the alumina particles in the concentration range of 3 to 7 wt. percent. However, our experiment shows that the lower
  • FIG. 2 for Experiment 2 shows the results of W removal rate plotted normalized against removal rate for 5 wt% Fe(NO 3 ) 3 • 9H 2 O.
  • the results show a strong W removal rate dependence on concentration of Fe 3+ between 3 wt% to 5 wt% ferric nitrate.
  • the removal rate is nearly constant for a fixed 2.8 wt% alumina concentration.
  • surfactant used was a commercially available aqueous mixture of propylene glycol and methyl paraben from Universal Photonics Inc., sold under trade name EVERFLO.
  • the order of mixing the slurry components also had an unexpected effect on the results.
  • Batch A Surfactant was added to container holding alumina and ferric nitrate, previously diluted to near the final volume.
  • Batch B Surfactant was added to alumina concentrate. After brief stirring to homogenize the mixture, diluted ferric nitrate was added up to the final volume.
  • Batch C Surfactant added to alumina concentrate and mixed by a magnetically driven stirrer for 2 hours, then the diluted oxidizer, ferric nitride, was added to make up the final batch volume.
  • B Slu ⁇ y Composition
  • Polishing in Strasbaugh carried out at 5 psi spindle down force, 25 rpm spindle rotation, 100 rpm table rotation.
  • a polishing pad was wet-idled overnight. The pad was pre-
  • FIG. 3 shows that when performing CMP using no surfactant that
  • the suspension agent allows the suspension agent to engage and completely coat each alumina panicle by nature of the organic surfactant molecules making the particle surface non-polar. It is believed that this precludes the particle from acquiring a charge from the oxidizer. thereby preventing agglomeration. Accordingly, when the
  • the oxide removal rate As seen in FIG. 4, the oxide removal rate
  • the scratch count decreases dramatically over the six-day aging period.
  • the decrease defect count is decreased to less than 10% from the one-day defect count value.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Suspension chimio-mécanique au tungstène, destinée au polissage. Cette suspension se compose de particules abrasives de faible diamètre moyen, la variation de leur diamètre restant très réduite. L'abrasif doit être parfaitement prémélangé à un agent tensioactif en suspension avant l'adjonction de l'agent oxydant.
EP95938941A 1994-11-18 1995-10-23 Procede de fabrication d'une suspension chimio-mecanique destinee au polissage et la suspension elle-meme Ceased EP0792515A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US34232694A 1994-11-18 1994-11-18
PCT/US1995/013919 WO1996016436A1 (fr) 1994-11-18 1995-10-23 Procede de fabrication d'une suspension chimio-mecanique destinee au polissage et la suspension elle-meme
US342326 2003-01-15

Publications (1)

Publication Number Publication Date
EP0792515A1 true EP0792515A1 (fr) 1997-09-03

Family

ID=23341343

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95938941A Ceased EP0792515A1 (fr) 1994-11-18 1995-10-23 Procede de fabrication d'une suspension chimio-mecanique destinee au polissage et la suspension elle-meme

Country Status (2)

Country Link
EP (1) EP0792515A1 (fr)
WO (1) WO1996016436A1 (fr)

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US5958148A (en) 1996-07-26 1999-09-28 Speedfam-Ipec Corporation Method for cleaning workpiece surfaces and monitoring probes during workpiece processing
WO1998005066A2 (fr) * 1996-07-26 1998-02-05 Speedfam Corporation Procede et dispositif de detection et de mesure en cours de fabrication de couches pelliculaires
JP2008277848A (ja) * 1996-07-26 2008-11-13 Ekc Technol Inc 化学機械研磨組成物及び化学機械研磨方法
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6033596A (en) * 1996-09-24 2000-03-07 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US5972792A (en) * 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
WO1998023697A1 (fr) * 1996-11-26 1998-06-04 Cabot Corporation Composition et procede de polissage de disques durs
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
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US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JPH10204416A (ja) * 1997-01-21 1998-08-04 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
DE19708652C2 (de) * 1997-02-21 1999-01-07 Siemens Ag Schleifmittel und Verfahren zum Polieren von Lichtwellenleiter-Endflächen
US5916855A (en) * 1997-03-26 1999-06-29 Advanced Micro Devices, Inc. Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films
US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
US5770103A (en) * 1997-07-08 1998-06-23 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US6736714B2 (en) 1997-07-30 2004-05-18 Praxair S.T. Technology, Inc. Polishing silicon wafers
US6514301B1 (en) 1998-06-02 2003-02-04 Peripheral Products Inc. Foam semiconductor polishing belts and pads
US7718102B2 (en) 1998-06-02 2010-05-18 Praxair S.T. Technology, Inc. Froth and method of producing froth
US6220934B1 (en) 1998-07-23 2001-04-24 Micron Technology, Inc. Method for controlling pH during planarization and cleaning of microelectronic substrates
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Also Published As

Publication number Publication date
WO1996016436A1 (fr) 1996-05-30

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