EP0789451A1 - Amplificateur hautes fréquences et commande - Google Patents
Amplificateur hautes fréquences et commande Download PDFInfo
- Publication number
- EP0789451A1 EP0789451A1 EP97101439A EP97101439A EP0789451A1 EP 0789451 A1 EP0789451 A1 EP 0789451A1 EP 97101439 A EP97101439 A EP 97101439A EP 97101439 A EP97101439 A EP 97101439A EP 0789451 A1 EP0789451 A1 EP 0789451A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- bias
- amplifier
- oscillator
- control circuit
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003321 amplification Effects 0.000 claims abstract description 23
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000010420 art technique Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/305—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in case of switching on or off of a power supply
Definitions
- the present invention concerns a high frequency amplifier and means for controlling the amplifier, especially, in integrated circuit (IC) form.
- IC integrated circuit
- FETs Field Effect transistors
- III-V semiconductor material as for example, GaAs.
- Various types of semiconductor devices including FETs can be constructed in this and other semiconductor materials.
- Other non-limiting examples of semiconductor devices are MESFET, HEMT, PHEMT, MOSFET, JFET and Bipolar devices.
- main circuit supply is positive and the bias supply is negative.
- main circuit supply and bias supply polarity can also be made depending upon the types of devices being employed.
- FIG. 1 shows a simplified schematic diagram of amplifier circuit 10 of integrable high frequency amplifier 12 with internal bias and control circuit 14 and amplifier element 16, coupled to power supply switch 18, according to the present invention.
- Dashed outline 12' surrounds the components that can be conveniently integrated in a single semiconductor micro-chip to provide integrated amplifier 12.
- the components within dashed outline 12' are particularly adapted to being provided within a single micro-circuit (IC) chip or monolithic microwave integrated circuit (MMIC), but this is not essential for the present invention and they can also be provided in an assembly.
- IC micro-circuit
- MMIC monolithic microwave integrated circuit
- Amplifier circuit 10 has RF input 20 through which RF signals of frequency f i intended to be amplified by amplifier element 16 of pass band ⁇ f are provided.
- f i is typically in the range of about 0.8 to 2 GHz or higher.
- Amplifier circuit 10 has ENABLE input 22 which controls operation of high frequency oscillator 24, as for example, to turn oscillator 24 ON and OFF, and to control priority control circuit 42.
- Oscillator 24 receives power via terminal 21 coupled to a power supply, e.g., a battery. It is desirable that oscillator 24 operate at high frequency, in particular at a frequency significantly higher than f i , for example in the range of at least 2-5 times f i .
- oscillator 24 operates at about 3-4 GHz or higher. It is important to operate oscillator 24 at such high frequency because it permits the use of very small elements for constructing oscillator 24, rectifier 30 and low pass filter 34. A further advantage is that spurious signals from oscillator 24 are further from the carrier f i and more easily filtered within the overall system. Thus, the possibility that intermodulation products of oscillator spurious signals and f i and harmonies fall into the system bandwidth is considerably reduced. It is important to be able to construct the circuit with elements of small physical size that are readily manufactured in integrated circuit form or are ordinarily present in a typical IC or MMIC structure.
- bonding wires have sufficient inductance to be used as inductive reactance.
- bonding wire 27 in FIG. 2 can act as a tuning inductor for oscillator 24 without any need for external inductive components.
- very small values of capacitance can be used which are easily fabricated using small amounts of chip area.
- the oscillator can also operate at frequencies significant lower than f i . In such a case the oscillator frequency must be high enough to switch the oscillator ON and OFF in the time required, especially when f i is higher than 5 GHz.
- the oscillator can operate at the exact frequency fi when linked to the input signal by, for example, connecting terminal 21 to input 20 via an adequate matching circuitry.
- the oscillator is then synchronized on fi or simply acts as a buffer to amplify the incoming RF carrier. If the input signal swing is sufficient enough the oscillator (24) can even be unbiased. A minimum input power will however be required at pin 20 for proper operation which is not needed when the oscillator is free runing (fosc ⁇ fi).
- Output 28 of oscillator 24 is fed to rectifier 30.
- Rectifier 30 is conveniently a two stage half-wave rectifier with the polarity of the diodes arranged so that a negative voltage appears on output 32 of rectifier 30 as for example to generate -6V DC from a +3.6 V DC power source at terminal 21. Other rectifying arrangements can also be used, provided that a voltage of the desired polarity appears on output 32.
- Output 32 is coupled to low pass filter 34 wherein the residual high frequency signal components from oscillator 24 and rectifier 30 are removed in a conventional manner.
- the negative DC output of low pass filter 34 is delivered to node 36.
- Node 36 is coupled to optional output terminal 38 where the negative voltage produced by oscillator 24, rectifier 30 and filter 34 appears and is available for use in other parts of the overall system (not shown).
- Node 36 is coupled to input 40 of priority control circuit 42 and to input 44 of bias/again control circuit 46.
- Output 48 of priority control circuit 42 is coupled to control input 50 of power supply switch 18.
- Output 52 of bias/gain control circuit 46 is coupled to node 54 which is in turn coupled to bias/gain inputs 56, 58 of amplification stages 60, 62 of amplifier element 16.
- Amplifier element 16 is shown as comprising two serially coupled amplification stages 60, 62 but this is merely for purposes of illustration and amplifier element 16 can have more or fewer amplification stages and can employ serially coupled or feedback amplifying stages or a combination thereof and be of any convenient type compatible with the other components of integrated amplifier 12.
- Input 64 of amplifier element 16 is coupled to RF input 20 and signal f i in amplified form appears on output 66.
- Amplification stages 60, 62 can be grounded source or grounded gate stages, e.g., when FETs are used. Other configurations and device types useful for high frequency amplification can also be used.
- Amplification stages 60, 62 can consist of a single device or multiple devices or a combination thereof.
- Bias/gain inputs 56, 58 are coupled to the appropriate input terminal of device or devices 71, 72 (FIG. 2) so as to preclude amplifier element 16 carrying excess current when coupled to the power supply via power supply switch 18.
- priority control circuit 42 The function of priority control circuit 42 is to ensure that power switch 18 does not close, thereby coupling amplifier element 16 to battery Vb, until after bias/gain control circuit 46 has applied bias to bias/gain inputs 56, 58 of amplification stages 60, 62, and that power supply switch 18 opens before such bias is removed. This ensures that amplification stages 60, 62 are protected from electrical and thermal stress associated with uncontrolled (e.g., no-bias) operation. This can be accomplished in any number of ways, as for example (see FIG. 2) wherein a logical function is realized with two FETs and a output signal is provided to power switch 18 only when proper negative bias is present at node 36 is negative and ENABLE terminal 22 is positive. That prevents amplifier element 16 from carrying too much current.
- Power supply switch 18 can be any convenient kind of device capable of coupling and decoupling power supply Vb appearing at terminal 26 to amplifier element 16.
- Power supply switch 18 need not be a very fast device, since its function is to apply and remove the power supply potential to and from amplifier element 16. It does not operate at frequency f i being amplified but, generally, at a much slower rate corresponding to the rate at which amplifier 12 is being turned on and off by a signal provided at ENABLE input 22.
- amplifier element 16 is formed from N-channel depletion mode FETs
- power supply switch 18 is conveniently a P-channel FET, or for example, a PMOS device, but other kinds of devices can also be used, e.g. PNP bipolar and N-channel normally-OFF-depletion MESFET.
- amplifier 12 permits devices of opposite types (e.g., P- and N- channel or PNP and NPN or a combination thereof, etc.) to fabricated in or on the same substrate then power supply switch 18 can also be integrated within amplifier 12, but this is not essential.
- opposite types e.g., P- and N- channel or PNP and NPN or a combination thereof, etc.
- Another advantage of the present invention utilizing ultra-high frequency oscillator 24 is that a change in the signal at ENABLE input 22 produces a very rapid change in output of amplifier 12 since it only takes a few cycles of oscillator 24 before the effect of shutting off oscillator 24 by means of an appropriate signal removed from ENABLE input 22, is reflected in priority control circuit 42, thereby causing power supply switch 18 to turn OFF.
- amplifier 12 of the present invention an be turned ON or OFF in less than 1 microsecond as compared to 200 microseconds for typical prior art amplifiers employing 100 kHz charge pumps to generate their negative bias voltage. This is a significant advantage in portable communications systems where it is desirable to conserve power by only turning on the RF power amplifier during very brief burst transmission and turning it off the remainder of the time. With the much slower reacting systems of the prior art, significant additional power is wasted during the much longer turn-ON, turn-OFF periods.
- a still further advantage of the present invention utilizing ultra-high frequency oscillator 24 i.e., 2-5 x f i , e.g., >3 GHz, preferably about 4 GHz or higher
- ultra-high frequency oscillator 24 i.e., 2-5 x f i , e.g., >3 GHz, preferably about 4 GHz or higher
- the ripple that remains on the DC potential on line 32 is small and relatively easily filtered away, and even if some remains, the modulation products produced in amplifier element 16 are sufficiently far away from f i that they are not within the pass-band of amplifier element 16.
- an electrically very clean output is achieved by amplifier 12.
- bias/gain control circuit 46 The function of bias/gain control circuit 46 is to, for example, take the raw DC voltage appearing at node 36 and compensate for threshold variation of FETs of amplification stages 60, 62 and apply it to inputs 56, 58 of amplifier element 16.
- the bias/gain control circuit 46 allows a control signal (e.g. 0 to + 2.7 volts) applied to terminal 68 to vary the bias applied at node 54 for setting the operating point of amplifiers 60, 62 to a range of about for example -5 to -2.3 volts for controlling their gain and operation, and therefor their power output.
- bias/gain control circuit 46 A preferred means of implementing bias/gain control circuit 46 is shown in FIG. 2 wherein depletion type FET 41 acts as a current source only if negative DC voltage from rectifier 30 appears at node 36 and that FET 41 and resistor 47 linearly transfer the voltage variation applied to external port 68 to the bias input of the amplification stages 60, 62 at node 54.
- transistors 41, 70, 71, 72 are depletion type FETs and transistors 80, 81 are enhancement type FETs and the other components shown are represented by conventional symbols.
- Dashed outline 12' indicates those components of amplifier 12 conveniently integrated within a monolithic semiconductor chip and dashed outline 12'' indicates amplifier 12 after mounting in a device package.
- optional line 55 (shown dashed in FIG. 1) can be provided between output 52 of bias/gain control circuit 46 and priority control circuit 42 to allow priority control circuit 42 to directly measure the voltage present at node 52.
- the present invention provides an RF amplifier and bias and control circuit that is readily integrable, that can be made in extremely small size, that provides much faster response time than hitherto available, that includes inherent protection for depletion mode devices to prevent overload, that provides an output substantially free from spurious modulation caused by the negative bias supply, that needs few external components, that provides for variable power operation and that provides for lower overall power consumption in communication systems employing burst mode signaling.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9601392A FR2744578B1 (fr) | 1996-02-06 | 1996-02-06 | Amlificateur hautes frequences |
FR9601392 | 1996-02-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0789451A1 true EP0789451A1 (fr) | 1997-08-13 |
EP0789451B1 EP0789451B1 (fr) | 2002-08-28 |
Family
ID=9488867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP97101439A Expired - Lifetime EP0789451B1 (fr) | 1996-02-06 | 1997-01-30 | Amplificateur hautes fréquences intégré |
Country Status (5)
Country | Link |
---|---|
US (1) | US5874860A (fr) |
EP (1) | EP0789451B1 (fr) |
JP (1) | JP3901780B2 (fr) |
DE (1) | DE69714881T2 (fr) |
FR (1) | FR2744578B1 (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0899869A1 (fr) * | 1997-08-26 | 1999-03-03 | Robert Bosch Gmbh | Méthode et circuit pour la polarisation d'un étage à transistor |
WO2000033459A1 (fr) * | 1998-12-02 | 2000-06-08 | Ericsson Inc. | Bloc de puissance rf a gain constant, phase constante |
WO2006041087A1 (fr) | 2004-10-13 | 2006-04-20 | Sony Corporation | Circuit integre haute frequence |
EP1811658A1 (fr) * | 2006-01-24 | 2007-07-25 | Alcatel Lucent | Protection de la polarisation d'un amplificateur de puissance à transistor à appauvrissement |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998006174A1 (fr) * | 1996-08-05 | 1998-02-12 | Mitsubishi Denki Kabushiki Kaisha | Circuit integre haute frequence pour emetteur-recepteur radio haute frequence exempt de fuites de puissance haute frequence |
US6043712A (en) * | 1998-07-17 | 2000-03-28 | Motorola, Inc. | Linear power amplifier |
US6104246A (en) * | 1999-05-25 | 2000-08-15 | International Business Machines Corporation | Variable gain RF amplifier with switchable bias injection and feedback |
US6300835B1 (en) | 1999-12-10 | 2001-10-09 | Motorola, Inc. | Power amplifier core |
US6392257B1 (en) | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6721368B1 (en) * | 2000-03-04 | 2004-04-13 | Qualcomm Incorporated | Transmitter architectures for communications systems |
JP2004503920A (ja) * | 2000-05-31 | 2004-02-05 | モトローラ・インコーポレイテッド | 半導体デバイスおよび該半導体デバイスを製造する方法 |
US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
US6427066B1 (en) | 2000-06-30 | 2002-07-30 | Motorola, Inc. | Apparatus and method for effecting communications among a plurality of remote stations |
US6477285B1 (en) | 2000-06-30 | 2002-11-05 | Motorola, Inc. | Integrated circuits with optical signal propagation |
US6410941B1 (en) | 2000-06-30 | 2002-06-25 | Motorola, Inc. | Reconfigurable systems using hybrid integrated circuits with optical ports |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
US6590236B1 (en) | 2000-07-24 | 2003-07-08 | Motorola, Inc. | Semiconductor structure for use with high-frequency signals |
AU2001277001A1 (en) * | 2000-07-24 | 2002-02-05 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
US6432546B1 (en) | 2000-07-24 | 2002-08-13 | Motorola, Inc. | Microelectronic piezoelectric structure and method of forming the same |
US6482538B2 (en) | 2000-07-24 | 2002-11-19 | Motorola, Inc. | Microelectronic piezoelectric structure and method of forming the same |
US6369641B1 (en) * | 2000-09-22 | 2002-04-09 | Infineon Technologies North America Corp. | Biasing circuits |
US6493497B1 (en) | 2000-09-26 | 2002-12-10 | Motorola, Inc. | Electro-optic structure and process for fabricating same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6583034B2 (en) | 2000-11-22 | 2003-06-24 | Motorola, Inc. | Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure |
US6563118B2 (en) | 2000-12-08 | 2003-05-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
US6559471B2 (en) | 2000-12-08 | 2003-05-06 | Motorola, Inc. | Quantum well infrared photodetector and method for fabricating same |
US20020096683A1 (en) * | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US7046719B2 (en) | 2001-03-08 | 2006-05-16 | Motorola, Inc. | Soft handoff between cellular systems employing different encoding rates |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US20030010992A1 (en) * | 2001-07-16 | 2003-01-16 | Motorola, Inc. | Semiconductor structure and method for implementing cross-point switch functionality |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6472694B1 (en) | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
US6855992B2 (en) * | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
US6594414B2 (en) | 2001-07-25 | 2003-07-15 | Motorola, Inc. | Structure and method of fabrication for an optical switch |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6585424B2 (en) | 2001-07-25 | 2003-07-01 | Motorola, Inc. | Structure and method for fabricating an electro-rheological lens |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6462360B1 (en) | 2001-08-06 | 2002-10-08 | Motorola, Inc. | Integrated gallium arsenide communications systems |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US20030036217A1 (en) * | 2001-08-16 | 2003-02-20 | Motorola, Inc. | Microcavity semiconductor laser coupled to a waveguide |
US20030071327A1 (en) * | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
KR100480244B1 (ko) * | 2002-06-03 | 2005-04-06 | 삼성전자주식회사 | 레이저 모듈 |
US20040012037A1 (en) * | 2002-07-18 | 2004-01-22 | Motorola, Inc. | Hetero-integration of semiconductor materials on silicon |
US20040069991A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Perovskite cuprate electronic device structure and process |
US6965128B2 (en) * | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
US7020374B2 (en) * | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
US20040164315A1 (en) * | 2003-02-25 | 2004-08-26 | Motorola, Inc. | Structure and device including a tunneling piezoelectric switch and method of forming same |
US7733134B1 (en) * | 2006-03-31 | 2010-06-08 | Ciena Corporation | High speed low noise switch |
US8644777B2 (en) * | 2010-05-07 | 2014-02-04 | Skyworks Solutions, Inc. | System and method for power amplifier over-voltage protection |
DE102018113654A1 (de) | 2018-06-08 | 2019-12-12 | Schaeffler Technologies AG & Co. KG | Zylinderkopfmodul eines variablen Ventiltriebs einer Brennkraftmaschine |
US20200076488A1 (en) | 2018-08-30 | 2020-03-05 | Skyworks Solutions, Inc. | Beamforming communication systems with sensor aided beam management |
CN112483214A (zh) * | 2019-09-12 | 2021-03-12 | 舍弗勒技术股份两合公司 | 内燃机的可变气门机构的缸盖模块 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4268797A (en) * | 1979-03-28 | 1981-05-19 | Westinghouse Electric Corp. | Self-pulsed microwave power amplifier |
JPS5669908A (en) * | 1979-11-12 | 1981-06-11 | Mitsubishi Electric Corp | Field effect transistor circuit with protecting circuit |
EP0074294A1 (fr) * | 1981-08-25 | 1983-03-16 | Lmt Radio Professionnelle | Amplificateur hyperfréquence à transistor à effet de champ, notamment pour radar Doppler |
Family Cites Families (4)
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US4994757A (en) * | 1989-11-01 | 1991-02-19 | Motorola, Inc. | Efficiency improvement of power amplifiers |
ES2073541T3 (es) * | 1989-12-05 | 1995-08-16 | Nec Corp | Unidad amplificadora de potencia que utiliza un modulo amplificador de potencia. |
US5640693A (en) * | 1994-08-30 | 1997-06-17 | Sensormatic Electronics Corporation | Transmitter for pulsed electronic article surveillance systems |
US5642378A (en) * | 1994-11-17 | 1997-06-24 | Denheyer; Brian John | Dual mode analog and digital cellular phone |
-
1996
- 1996-02-06 FR FR9601392A patent/FR2744578B1/fr not_active Expired - Fee Related
- 1996-12-04 US US08/758,832 patent/US5874860A/en not_active Expired - Lifetime
-
1997
- 1997-01-30 DE DE69714881T patent/DE69714881T2/de not_active Expired - Fee Related
- 1997-01-30 EP EP97101439A patent/EP0789451B1/fr not_active Expired - Lifetime
- 1997-02-03 JP JP03439997A patent/JP3901780B2/ja not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4268797A (en) * | 1979-03-28 | 1981-05-19 | Westinghouse Electric Corp. | Self-pulsed microwave power amplifier |
JPS5669908A (en) * | 1979-11-12 | 1981-06-11 | Mitsubishi Electric Corp | Field effect transistor circuit with protecting circuit |
EP0074294A1 (fr) * | 1981-08-25 | 1983-03-16 | Lmt Radio Professionnelle | Amplificateur hyperfréquence à transistor à effet de champ, notamment pour radar Doppler |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 005, no. 133 (E - 071) 25 August 1981 (1981-08-25) * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0899869A1 (fr) * | 1997-08-26 | 1999-03-03 | Robert Bosch Gmbh | Méthode et circuit pour la polarisation d'un étage à transistor |
WO2000033459A1 (fr) * | 1998-12-02 | 2000-06-08 | Ericsson Inc. | Bloc de puissance rf a gain constant, phase constante |
WO2006041087A1 (fr) | 2004-10-13 | 2006-04-20 | Sony Corporation | Circuit integre haute frequence |
EP1806784A1 (fr) * | 2004-10-13 | 2007-07-11 | Sony Corporation | Circuit integre haute frequence |
EP1806784A4 (fr) * | 2004-10-13 | 2011-04-13 | Sony Corp | Circuit integre haute frequence |
US8797697B2 (en) | 2004-10-13 | 2014-08-05 | Sony Corporation | High frequency integrated circuit |
EP1811658A1 (fr) * | 2006-01-24 | 2007-07-25 | Alcatel Lucent | Protection de la polarisation d'un amplificateur de puissance à transistor à appauvrissement |
Also Published As
Publication number | Publication date |
---|---|
EP0789451B1 (fr) | 2002-08-28 |
JPH09232875A (ja) | 1997-09-05 |
DE69714881D1 (de) | 2002-10-02 |
US5874860A (en) | 1999-02-23 |
DE69714881T2 (de) | 2003-04-10 |
FR2744578A1 (fr) | 1997-08-08 |
FR2744578B1 (fr) | 1998-04-30 |
JP3901780B2 (ja) | 2007-04-04 |
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