EP0787562A1 - Machine de polissage double-face et procédé de polissage des faces opposées d'une pièce au moyen de cette dernière - Google Patents

Machine de polissage double-face et procédé de polissage des faces opposées d'une pièce au moyen de cette dernière Download PDF

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Publication number
EP0787562A1
EP0787562A1 EP97300659A EP97300659A EP0787562A1 EP 0787562 A1 EP0787562 A1 EP 0787562A1 EP 97300659 A EP97300659 A EP 97300659A EP 97300659 A EP97300659 A EP 97300659A EP 0787562 A1 EP0787562 A1 EP 0787562A1
Authority
EP
European Patent Office
Prior art keywords
double side
side polishing
polishing machine
resin
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97300659A
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German (de)
English (en)
Other versions
EP0787562B1 (fr
Inventor
Tadahiro Kato
Hisashi A-301 355-3 Ohaza Masumura
Hido Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3868196A external-priority patent/JPH09207063A/ja
Priority claimed from JP9616696A external-priority patent/JPH09254026A/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of EP0787562A1 publication Critical patent/EP0787562A1/fr
Application granted granted Critical
Publication of EP0787562B1 publication Critical patent/EP0787562B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces

Definitions

  • the present invention relates to an improvement on a double side polishing machine for polishing opposite sides of a workpiece such as a semiconductor wafer.
  • the present invention also relates to a method of polishing such a workpiece using an improved double side polishing machine.
  • a double side polishing machine has been used to polish opposite surfaces of a semiconductor wafer or the like.
  • a double side polishing machine there are provided a plurality of disk-shaped carriers, and a plurality of carrier holes are formed in each carrier so as to hold wafers.
  • External teeth formed on the outer periphery of each carrier are meshed with a sun gear and an internal gear, so that the carriers revolve around the sun gear while rotating on their own axes. Wafers placed in the carrier holes are sandwiched between an upper polishing turn table and a lower polishing turn table. In this state, the top and bottom surfaces of the wafers are polished simultaneously.
  • metallic carriers there have been known metallic carriers, metallic carriers having resin coating on their surfaces (see Japanese Utility Model Application Laid-Open ( Kokai ) No. 58-4349), and carriers formed of laminated carbon-fiber plate into which resin is impregnated (see Japanese Patent Application Laid-Open ( kokai ) No. 58-143954).
  • the sun gear and the internal gear are generally made of a metallic material such as steel.
  • the sun gear and the internal gear are made of a metallic material and the carriers are metallic carriers with or without resin coating
  • metal powder is produced from meshing portions where metallic surfaces are exposed, although the amount of produced metal power is small.
  • the metal powder enters the space between a polishing surface of a wafer and the upper or lower polishing turn table, scratches are formed on the surface of the wafer, or metal contamination is induced.
  • the carriers are made of a resin
  • the external teeth of the carriers that are also made of the resin are meshed with the teeth of the metallic sun gear and the metallic internal gear, and are easily chipped and damaged. This shortens the service life of the carriers.
  • metal or resin powder enters the space between a polishing surface of a wafer and the upper or lower polishing turn table, scratches are formed on the surface of the wafer. Such scratches and metal contamination cause a fatal deficiency for semiconductor substrates, and yield of products decreases considerably.
  • pins or rollers that form the teeth of the sun gear and the internal gear are made of a metal. Therefore, the pins or rollers wear when they are meshed with the external teeth of the carriers, so that metal powder is generated.
  • the present invention has been accomplished to solve the above-mentioned problems, and an object of the present invention is to provide an improved double side polishing machine that can prevent generation of metal powder, thereby suppressing generation of scratches and metal contamination.
  • Another object of the present invention is to provide a method of polishing opposite surfaces of a workpiece using the improved double side polishing machine.
  • the present invention provides a double side polishing machine which includes a disk-shaped carrier for holding an article to be polished (hereinafter referred to as a "workpiece"), a sun gear and an internal gear which are meshed with external teeth of the carrier, and upper and lower polishing turn tables that sandwich the workpiece so as to polish opposite surfaces of the workpiece, wherein at least the tooth portions of the sun gear and the internal gear are made of a hard resin material.
  • a double side polishing machine which includes a disk-shaped carrier for holding an article to be polished (hereinafter referred to as a "workpiece"), a sun gear and an internal gear which are meshed with external teeth of the carrier, and upper and lower polishing turn tables that sandwich the workpiece so as to polish opposite surfaces of the workpiece, wherein at least the tooth portions of the sun gear and the internal gear are made of a hard resin material.
  • the sun gear and the internal gear are made of a metallic material, and at least the tooth portions of the sun gear and the internal gear are coated with a hard resin coating material.
  • the tooth portions of the sun gear and the internal gear are made of a hard resin or coated with a hard resin coating material, scratches can be suppressed, while the problem of metal contamination can be avoided.
  • the meshing engagement with the external teeth of the carrier becomes soft, the durability of the carrier can be enhanced.
  • the hard resin material is preferably a resin having excellent wear resistance, sufficient self-lubricating performance, and high shear resistance.
  • each tooth portion is formed as a single member.
  • each tooth portion is formed by a plurality of separable segments.
  • the hard resin material and the hard resin coating material are selected from the group consisting of polyimide sintered body, polyether etherketone (PEEK), polyacetal, polyethylene terephthalate (PET), polyamide, and polyamide imide.
  • PEEK polyether etherketone
  • PET polyethylene terephthalate
  • polyamide polyamide imide
  • the external teeth of the carrier is made of a resin material.
  • the resin material is preferably selected from the group consisting of glass epoxy material, laminated plate of resin-impregnated carbon fibers, and laminated plate of resin-impregnated alamido fibers.
  • the carrier may be made of a metallic material, and the surface of the carrier may be covered with a resin coating material.
  • the carrier is made of a resin material, or is made of a metallic material and coated with a resin coating material, the teeth softly contact each other, so that no metallic powder is produced from the meshing surfaces. Accordingly, it becomes possible to prevent formation of scratches on wafer surfaces and metal contamination.
  • the present invention also provides a double side polishing machine which includes a disk-shaped carrier for holding a workpiece, a sun gear and an internal gear which are meshed with external teeth of the carrier, and upper and lower polishing turn tables that sandwich the workpiece so as to polish opposite surfaces of the workpiece, wherein each of the tooth portions of the sun gear and the internal gear is formed by a plurality of pins disposed at a predetermined pitch, and a sleeve made of a resin or a resin-coated metallic sleeve is fit onto the outer surface of each of the pins.
  • the sleeve is made of a material having a bending strength equal to or greater than 1,000 kg/cm 2 , a shear strength equal to or greater than 800 kg/cm 2 , and a coefficient of friction equal to or less than 0.2.
  • the sleeves are made of a resin, polyamide imide resin, polyamide resin, polyether etherketone resin or the like may be used.
  • the present invention further provides a method of polishing opposite sides of a workpiece through use of one of the double side polishing machines according to the present invention.
  • the method makes it possible to polish the workpiece stably without fear of generating scratches or metal contamination.
  • FIG. 1 is a view schematically showing the structure of a double side polishing machine according to the present invention
  • FIG. 2 is a top view as viewed from line A-A in FIG. 1
  • FIG. 3 is a view showing grooves formed in a polishing surface of a polishing turn table.
  • a double side polishing machine is structured as a machine for simultaneously polishing opposite surfaces of, for example, semiconductor wafers.
  • the double side polishing machine includes a ring-shaped internal gear 1 fixed to a machine frame 7, a sun gear 2 rotatably about a rotational axis 2a, and three thin-plate-shaped carriers 3 meshed with the internal gear 1 and the sun gear 2.
  • a tooth portion 1g is formed on the inner circumferential portion of the internal gear 1, and a tooth portion 2g is formed on the outer circumferential portion of the sun gear 2, respectively.
  • External teeth 3g are formed on the outer circumferential portion of each carrier 3.
  • the external gear 3g is meshed with the tooth portion 1g of the internal gear 1 and the tooth portion 2g of the sun gear 2.
  • Each carrier 3 has carrier holes 3a at three positions, and wafers W are held within the carrier holes 3a.
  • An upper polishing turn table 4 and a lower polishing turn table 5 are disposed such that the wafers W are sandwiched between the upper and lower polishing turn tables 4 and 5.
  • the polishing turn tables 4 and 5 are respectively rotated about rotational axes 4a and 5a in opposite directions. As shown in FIG. 3, grid-like grooves m are formed in each of surfaces of the polishing turn tables 4 and 5 which face each other. Therefore, polishing agent supplied from a polishing agent supply nozzle 6, which will be described later, can be spread uniformly. Polishing pads 4c and 5c are bonded to the lower surface of the upper polishing turn table 4 and the upper surface of the lower polishing turn table 5, respectively.
  • polishing agent supplied from the polishing agent supply nozzle 6 is supplied to the polishing surfaces of the wafers W via a polishing agent passage 4b formed in the upper polishing turn table 4.
  • the above-described double side polishing machine is operated as follows. After the upper polishing turn table 4 is moved upward, wafers W are placed into the carrier holes 3a. Subsequently, the upper polishing turn table 4 is moved downward, so that the wafers W are sandwiched between the upper polishing turn table 4 and the lower polishing turn table 5. While polishing agent is supplied from the polishing agent supply nozzle 6, the sun gear 2 is rotated. As a result, the carriers 3 revolve around the sun gear 2 and rotate on their own axes. Simultaneously with this, the upper polishing turn table 4 and the lower polishing turn table 5 are rotated in opposite directions so as to polish the top and bottom surfaces of the wafers W.
  • the internal gear 1 and the sun gear 2 in particular have unique structures that prevent generation of metal powder or chips at portions where the internal gear 1 and the sun gear 2 mesh with the external teeth 3g of the carriers 3.
  • each of the ring-shaped internal gear 1 (FIG. 4A) and the sun gear 2 (FIG. 4B) is made of a hard resin material as a single member.
  • the hard resin material is selected from resins having excellent wear resistance, sufficient self-lubricating performance, and high shear resistance.
  • resins having excellent wear resistance, sufficient self-lubricating performance, and high shear resistance For example, polyimide sintered body, polyether etherketone (PEEK), polyacetal, polyethylene terephthalate (PET), polyamide, and polyamide imide are suitable, and polyimide sintered body is most suitable.
  • the internal gear 1 and the sun gear 2 shown in FIGS. 4A and 4B are made of a metallic material such as steel, and the tooth portions 1g and 2g and vicinities thereof are covered with a hard resin coating material.
  • a hard resin coating material not only the tooth portions 1g and 2g and vicinities thereof, but also other portions of the internal gear 1 and the sun gear 2 may be covered with the hard resin coating material.
  • the hard resin material is preferably selected from resins having excellent wear resistance, sufficient self-lubricating performance, and high shear resistance, and the above-described resin materials are suitable.
  • the internal gear 1 (FIG. 5A) is composed of an outer metallic member s and an inner resin member r that is disposed on the inner side of the outer metallic member s.
  • the outer metallic member s is made of a metal such as steel.
  • the inner resin member r is formed in a ring-like shape and has the tooth portion 1g.
  • the sun gear 2 (FIG. 5B) is composed of a center metallic member s and an outer resin member r that is disposed to surround the center metallic member s.
  • the center metallic member s is made of a metal such as steel.
  • the outer resin member r is formed in a ring-like shape and has the tooth portion 2g.
  • the metallic and resin members are fixed to each other through engagement between concave and convex surfaces, or through use of screws or the like.
  • each of the resin members shown in FIGS. 5A and 5B is divided into a plurality of segments, such that all the segments have the same shape and the same size. These segments are fixed to a corresponding metallic member through engagement between concave and convex surfaces, or through use of screws. Therefore, each of the segments can be attached and removed individually.
  • the internal gear 1 and the sun gear 2 were made of polyimide sintered material, and steel carriers whose surfaces were coated with fluororesin were used as the carriers 3.
  • Etched wafers CZ P type, crystal orientation: ⁇ 100>
  • Unwoven cloth having a hardness of 80 (asker C hardness, JIS K-6301) was used as a polishing pad.
  • Example 1 is compared with Comparative Example 1, in which wafers were polished under the same machining conditions except that the internal gear 1 and the sun gear 2 were made of steel.
  • FIG. 8 shows the comparison between Example 1 and Comparative Example 1 regarding the degree of metal contamination of polished wafer surfaces.
  • the internal gear 1 and the sun gear 2 were made of polyamide imide resin, and glass epoxy laminated plate and carbon epoxy laminated plate were used as the carriers 3.
  • Etched wafers CZ P type, crystal orientation: ⁇ 100>
  • Unwoven cloth having a hardness of 80 (asker C hardness) was used as a polishing pad.
  • FIG. 9A Example 2 is compared with Comparative Example 2, in which wafers were polished under the same machining conditions except that the internal gear 1 and the sun gear 2 were made of steel.
  • FIG. 9B shows the scratch generation ratio of each batch that included 15 wafers.
  • FIG. 10 is a partial cross section of a double side polishing machine according to the fifth embodiment of the present invention
  • FIG. 11 is an enlarged view of a main portion of FIG. 10
  • FIG. 12 is a top view showing a state in which wafers are held by carriers.
  • a double side polishing machine is structured as a machine for simultaneously polishing opposite surfaces of, for example, semiconductor wafers.
  • the double side polishing machine includes an internal gear 11 and a sun gear 12 which are meshed with external teeth G of carriers C.
  • the double side polishing machine also includes an upper polishing turn table 13 and a lower polishing turn table 14 by which semiconductor wafers held by the carriers C are sandwiched. As shown in FIG. 12, three carriers C are meshed with the internal gear 11 and the sun gear 12.
  • the upper polishing turn table 13 and the lower polishing turn table 14 are individually driven, so that the upper and lower polishing turn tables 13 and 14 rotate about respective vertical axes. Polishing pads 13a and 14a are attached to surfaces of the polishing turn tables 13 and 14 which face each other.
  • a polishing agent supply passage 17 is formed in the upper polishing turn table 13, and polishing agent supplied from a nozzle 18 is supplied to polishing surfaces via the polishing agent supply passage 17.
  • Each carrier C has wafer holding holes h, as well as unillustrated polishing agent holes which allows the polishing agent to pass therethrough.
  • the upper polishing turn table 13 can be moved upward so as to allow semiconductor wafers W to be placed in the wafer holding holes h of the carriers C.
  • the tooth portion of the internal gear 11 and the tooth portion of the sun gear 12 have the same structure.
  • FIG. 11 which is an enlarged view of the tooth portion of the internal gear 11, the tooth portion is composed of a plurality of pins 15 that are embedded into the top surface of the gear base member 11a along the circumferential direction thereof, and sleeves 16 that are fit onto the pins 15 in a rotatable manner.
  • the pitch of the pins 15 corresponds to the pitch of the external gears G of the carriers C.
  • the sun gear 12 has a similar structure.
  • the pins 15 are made of metal such as SUS (stainless steel)
  • the sleeves 16 fit onto the pins 15 are made of a polyamide imide resin having an excellent mechanical strength and wear resistance.
  • the polyamide imide resin has a bending strength equal to or greater than 1,000 kg/cm 2 , a shear strength equal to or greater than 800 kg/cm 2 , and a coefficient of friction equal to or less than 0.2. This material is especially suitable for the tooth portion on which a large load acts while a force is transmitted between the external gears G of the carriers C and the tooth portion.
  • the carriers C are made of a glass-fiber-reinforced resin.
  • the above-described double side polishing machine is operated as follows. After the upper polishing turn table 13 is moved upward, semiconductor wafers W are placed into the wafer holding holes h of the carriers C. Subsequently, the upper polishing turn table 13 is moved downward, so that the wafers W are sandwiched between the upper polishing turn table 13 and the lower polishing turn table 14. As shown in FIG. 10, the thickness of the carriers C is smaller than the thickness of the semiconductor wafers W.
  • the sun gear 12 is rotated, the carriers C revolve around the sun gear 12 and rotate on their own axes. Simultaneously with this, the upper polishing turn table 13 and the lower polishing turn table 14 are rotated in opposite directions so as to polish the top and bottom surfaces of the wafers W. At this time, polishing agent is supplied to the polishing surfaces.
  • a load above 500 kg/cm 2 generally acts between the sleeves 16 fit onto the pins 15 and the external teeth G of the carriers C, so that these parts cause considerable friction.
  • the sleeves 16 employed in the present embodiment have excellent wear resistance and strength, the amount of wear of the sleeves 16 can be decreased.
  • no metal contamination occur, because the sleeves 16 are made of a resin. Moreover, scratches are hardly generated.
  • FIGS. 13 and 14 show the results of the tests, wherein FIG. 13 shows the scratch generation ratio, and FIG. 14 shows the metal contamination.
  • section A shows the results obtained in the case where metallic sleeves were used
  • section B shows the results obtained in the case where resin sleeves according to the present embodiment were used.
  • the carriers C were made of a glass-fiber-reinforced resin
  • the metallic sleeves are made of SUS
  • the resin sleeves are made of a polyamide imide resin.
  • Etched wafers (CZ P type, crystal orientation: ⁇ 100>) each having a diameter of 200 mm were used as samples.
  • Unwoven cloth (velour type) having a hardness of 80 (asker C hardness, JIS K-6301) was used as a polishing pad.
  • the generation of scratches was checked visually under a collimated light.
  • the degree of metal contamination was examined by ICP-MS after the polished wafers were cleaned with ammonia + H 2 O 2 and NaOH + H 2 O 2 , followed by decomposition and correction of Cr, Cu, and Ni through use of HF (hydrofluoric acid).
  • the sleeves 16 are made of a resin.
  • metal sleeves whose surfaces are coated with a resin may be used as the sleeves 16.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP19970300659 1996-02-01 1997-01-31 Machine de polissage double-face et procédé de polissage des faces opposées d'une pièce au moyen de cette dernière Expired - Lifetime EP0787562B1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP3868196A JPH09207063A (ja) 1996-02-01 1996-02-01 両面研磨機およびこれを用いて被加工物の両面を研磨する方法
JP38681/96 1996-02-01
JP3868196 1996-02-01
JP9616696 1996-03-26
JP96166/96 1996-03-26
JP9616696A JPH09254026A (ja) 1996-03-26 1996-03-26 両面研磨装置

Publications (2)

Publication Number Publication Date
EP0787562A1 true EP0787562A1 (fr) 1997-08-06
EP0787562B1 EP0787562B1 (fr) 1999-12-08

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EP19970300659 Expired - Lifetime EP0787562B1 (fr) 1996-02-01 1997-01-31 Machine de polissage double-face et procédé de polissage des faces opposées d'une pièce au moyen de cette dernière

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EP (1) EP0787562B1 (fr)
DE (1) DE69700885T2 (fr)
MY (1) MY129961A (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0945219A1 (fr) * 1998-03-24 1999-09-29 Speedfam Co., Ltd. Machine pour polir sur deux cÔtés
DE19961106A1 (de) * 1999-12-17 2001-07-05 Siemens Ag Haltevorrichtung für eine ebene Platte, Verwendung der Haltevorrichtung und ebene Platte
WO2002015247A2 (fr) * 2000-08-16 2002-02-21 Memc Electronic Materials, Inc. Procede et appareil de traitement d'une plaquette a semi-conducteurs utilisant un nouveau procede de polissage final
US6379226B1 (en) 1999-12-08 2002-04-30 Memc Electronic Materials, Inc. Method for storing carrier for polishing wafer
US6645862B2 (en) 2000-12-07 2003-11-11 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Double-side polishing process with reduced scratch rate and device for carrying out the process
DE10218483B4 (de) * 2002-04-25 2004-09-23 Siltronic Ag Vorrichtung zur gleichzeitig beidseitigen Material abtragenden Bearbeitung von Werkstücken
CN102441826A (zh) * 2008-10-22 2012-05-09 硅电子股份公司 用于扁平工件的双面处理的装置和用于多个半导体晶片的同时双面材料去除处理的方法
CN103158054A (zh) * 2011-12-19 2013-06-19 张卫兴 两种在双面研抛机上实现的单面抛光方法
CN105014491A (zh) * 2015-07-30 2015-11-04 苏州市智诚光学科技有限公司 一种玻璃盖板表面修复装置
CN113043096A (zh) * 2021-03-09 2021-06-29 钟衍滔 一种pcb板两面打磨的高端装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10159848B4 (de) * 2001-12-06 2004-07-15 Siltronic Ag Vorrichtung zur beidseitigen Bearbeitung von Werkstücken
DE102012214998B4 (de) 2012-08-23 2014-07-24 Siltronic Ag Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe
EP4417364A1 (fr) 2023-02-16 2024-08-21 Siltronic AG Procédé de polissage des deux faces de plaquettes en matériau semi-conducteur

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPS584349U (ja) 1981-06-30 1983-01-12 日立金属株式会社 両面研摩機用キヤリヤ
US4739589A (en) * 1985-07-12 1988-04-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoff Mbh Process and apparatus for abrasive machining of a wafer-like workpiece
JPS63221968A (ja) * 1987-03-11 1988-09-14 Fujitsu Ltd キヤリア
US5085009A (en) * 1989-05-02 1992-02-04 Sekisui Kagaku Kogyo Kabushiki Kaisha Carrier for supporting workpiece to be polished

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JPS584349U (ja) 1981-06-30 1983-01-12 日立金属株式会社 両面研摩機用キヤリヤ
US4739589A (en) * 1985-07-12 1988-04-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoff Mbh Process and apparatus for abrasive machining of a wafer-like workpiece
JPS63221968A (ja) * 1987-03-11 1988-09-14 Fujitsu Ltd キヤリア
US5085009A (en) * 1989-05-02 1992-02-04 Sekisui Kagaku Kogyo Kabushiki Kaisha Carrier for supporting workpiece to be polished

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Title
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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0945219A1 (fr) * 1998-03-24 1999-09-29 Speedfam Co., Ltd. Machine pour polir sur deux cÔtés
US6379226B1 (en) 1999-12-08 2002-04-30 Memc Electronic Materials, Inc. Method for storing carrier for polishing wafer
DE19961106A1 (de) * 1999-12-17 2001-07-05 Siemens Ag Haltevorrichtung für eine ebene Platte, Verwendung der Haltevorrichtung und ebene Platte
DE19961106C2 (de) * 1999-12-17 2003-01-30 Siemens Ag Haltevorrichtung zum mechanischen Bearbeiten einer ebenen Platte, Verwendung der Haltevorrichtung und ebene Platte
WO2002015247A2 (fr) * 2000-08-16 2002-02-21 Memc Electronic Materials, Inc. Procede et appareil de traitement d'une plaquette a semi-conducteurs utilisant un nouveau procede de polissage final
WO2002015247A3 (fr) * 2000-08-16 2003-05-01 Memc Electronic Materials Procede et appareil de traitement d'une plaquette a semi-conducteurs utilisant un nouveau procede de polissage final
US6709981B2 (en) 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
US6645862B2 (en) 2000-12-07 2003-11-11 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Double-side polishing process with reduced scratch rate and device for carrying out the process
DE10218483B4 (de) * 2002-04-25 2004-09-23 Siltronic Ag Vorrichtung zur gleichzeitig beidseitigen Material abtragenden Bearbeitung von Werkstücken
CN102441826A (zh) * 2008-10-22 2012-05-09 硅电子股份公司 用于扁平工件的双面处理的装置和用于多个半导体晶片的同时双面材料去除处理的方法
US8512099B2 (en) 2008-10-22 2013-08-20 Siltronic Ag Method for the simultaneous double-sided material removal processing of a plurality of semiconductor wafers
CN101722447B (zh) * 2008-10-22 2013-11-06 硅电子股份公司 用于扁平工件的双面处理的装置及其用途
CN102441826B (zh) * 2008-10-22 2015-06-17 硅电子股份公司 用于扁平工件的双面处理的装置和用于多个半导体晶片的同时双面材料去除处理的方法
CN103158054A (zh) * 2011-12-19 2013-06-19 张卫兴 两种在双面研抛机上实现的单面抛光方法
CN103158054B (zh) * 2011-12-19 2016-02-03 张卫兴 两种在双面研抛机上实现的单面抛光方法
CN105014491A (zh) * 2015-07-30 2015-11-04 苏州市智诚光学科技有限公司 一种玻璃盖板表面修复装置
CN113043096A (zh) * 2021-03-09 2021-06-29 钟衍滔 一种pcb板两面打磨的高端装置
CN113043096B (zh) * 2021-03-09 2023-08-08 广东恒兆丰科技有限公司 一种pcb板两面打磨的高端装置

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Publication number Publication date
DE69700885T2 (de) 2000-05-31
EP0787562B1 (fr) 1999-12-08
MY129961A (en) 2007-05-31
DE69700885D1 (de) 2000-01-13

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