EP0713235A1 - Relais micromécanique électrostatique - Google Patents

Relais micromécanique électrostatique Download PDF

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Publication number
EP0713235A1
EP0713235A1 EP95115647A EP95115647A EP0713235A1 EP 0713235 A1 EP0713235 A1 EP 0713235A1 EP 95115647 A EP95115647 A EP 95115647A EP 95115647 A EP95115647 A EP 95115647A EP 0713235 A1 EP0713235 A1 EP 0713235A1
Authority
EP
European Patent Office
Prior art keywords
spring tongue
armature
contact
spring
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP95115647A
Other languages
German (de)
English (en)
Other versions
EP0713235B1 (fr
Inventor
Lothar Prof. Dr. Kiesewetter
Joachim Schimkat
Helmut Dr. Schlaak
Hans-Jürgen Prof. Dr. Gevatter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0713235A1 publication Critical patent/EP0713235A1/fr
Application granted granted Critical
Publication of EP0713235B1 publication Critical patent/EP0713235B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0081—Electrostatic relays; Electro-adhesion relays making use of micromechanics with a tapered air-gap between fixed and movable electrodes

Definitions

  • the invention relates to a micromechanical electrostatic relay with a base substrate which carries a base electrode layer and at least one base contact piece, and with an armature substrate lying on the base substrate with at least one machined armature spring tongue which is connected on one side and which carries an armature electrode layer and an armature contact piece at its free end, wherein the spring tongue is bent away from the base substrate by a constant curvature in the state of rest, so that the two electrode layers form a wedge-shaped air gap between them and the spring tongue nestling in the working state when a voltage is applied between the electrode layers to the base substrate and the two contact pieces lie one on top of the other.
  • Such a micromechanical relay is already known from DE 42 05 029 C1.
  • a relay structure can be produced, for example, from a crystalline semiconductor substrate, preferably silicon, the spring tongue serving as an anchor being worked out of the semiconductor substrate by corresponding doping and etching processes.
  • a homogeneous curvature can be created in the spring tongue by means of a multilayer structure, the different layers being braced against one another on account of their different expansion coefficients and deposition temperatures.
  • the curved spring tongue with its correspondingly curved armature electrode thus forms a wedge-shaped air gap with respect to a flat base electrode on a flat base substrate, which can also be made of silicon or glass, for example.
  • the object of the invention is to develop a micromechanical relay of the type mentioned at the outset in such a way that it obtains a switching characteristic with a clear tilting behavior, that is to say the above-mentioned creeping switching behavior is avoided.
  • this object is achieved in that the wedge-shaped air gap between the electrodes has at least one geometric discontinuity.
  • Air gap between the two electrodes is achieved that an abrupt switching operation closes or opens the contact.
  • the spring tongue has a continuously curved section starting in the region of the connection to the armature substrate and then a straight section to its free end, the length of the curved section preferably being approximately 20 to 40% of the total length of the spring tongue can be.
  • the spring tongue initially rolls continuously over its curved section on the base electrode until the transition to the straight section is reached. At this moment, the rest of the straight section of the spring tongue strikes the end of the base electrode in an abrupt switching operation, the armature contact piece abruptly striking the base contact piece.
  • the beginning of the electrode surface has an offset with respect to the connection of the spring tongue to the armature substrate, the length of which can preferably be 20 to 40% of the total length of the spring tongue.
  • the spring tongue can be continuously curved over its entire length, while the discontinuity is now generated by the offset start of the electrode on the spring tongue.
  • an abrupt switching behavior can be generated in that the base electrode has a predetermined gap with respect to the anchor electrode at the connection point of the spring tongue, the height of which is at least 10% of the total deflection of the free spring end compared to the base substrate in the idle state.
  • This height of the gap which can preferably be between 10 and 20% of the spring deflection mentioned, is thus substantially greater than the thickness of an insulating layer which is necessary for the insulation between the two Electrodes at the clamping point is required in every case.
  • a contact spring area on which the armature contact piece is arranged, is formed at the free end of the spring tongue in a manner known per se, which is partially cut free by slots.
  • the distance between the two contact pieces is less than the distance between the two electrodes in the area of the free spring end. If the contact spring area is cut free in the middle, the armature electrode can lie flat on two side tabs next to the contact spring area on the base electrode, while the contact spring area is bent due to the raised contact pieces and thus generates the contact force.
  • FIG. 1 shows schematically the basic structure of a micromechanical electrostatic relay, in which the invention is used.
  • An armature spring tongue 2 is machined on an armature substrate 1, preferably a silicon wafer, within a correspondingly doped silicon layer by selective etching processes.
  • armature substrate 1 preferably a silicon wafer
  • a double layer 4 is generated, which in the example consists of an SiO2 layer, which generates compressive stresses, and an Si3N4 layer, which generates tensile stresses.
  • Spring tongue can be given a desired curvature.
  • the spring tongue has a metallic layer as an anchor electrode 5 on its underside. As can be seen in FIG. 2, this armature electrode 5 is divided into two in order to form a metallic feed line 6 for an armature contact piece 7 in the middle of the spring tongue.
  • a contact spring area 9, which carries the contact piece 7, is cut out at the free end of the spring tongue by two slots 8.
  • This contact spring area 9 can bend elastically when the armature electrode 5 lies flat on a base electrode, as a result of which the contact force is generated.
  • the armature substrate 1 is fastened on a base substrate 10, which in the present example consists of Pyrex glass, but which could also be formed from silicon, for example.
  • the base substrate 10 On its flat surface, the base substrate 10 carries a base electrode 11 and an insulating layer 12 in order to insulate the base electrode 11 from the armature electrode 5.
  • a base contact piece 13 is provided in a manner not shown with a feed line and of course arranged insulated from the base electrode 11.
  • a wedge-shaped air gap 14 is formed between the curved spring tongue 2 with the armature electrode 5 on the one hand and the base electrode 11 on the other hand.
  • FIGS. 1 and 2 The size relationships and layer thicknesses are shown in FIGS. 1 and 2 only from the point of view of clarity and do not correspond to the actual conditions.
  • a structure was chosen that had approximately the following dimensions: Spring tongue length (2) 1300 ⁇ m Spring tongue width (2) 1000 ⁇ m Spring tongue thickness (Si layer) (2) 10 ⁇ m SiO2 layer thickness (4) 500 nm Si3N4 layer thickness (4) 50 nm Length of the slots (8) 500 ⁇ m Deflection of the tongue end to the base electrode approx. 11 ⁇ m
  • FIG. 3 shows the switching characteristics of a structure according to FIG. 1 with a continuously curved spring tongue as a function of the control voltage.
  • the distance A of the spring tongue from the base electrode is shown in FIG. 3a.
  • Curve a24 shows the course of the distance of the contact spring area (at point 24) from the base electrode
  • curve a25 shows the corresponding distance course of the spring tongue in fork point 25 between the contact spring area and armature electrode area (end of the slots 8).
  • the course of the contact force F in FIG. 3b shows a very low contact force of approximately 8 ⁇ N (curve f1) at the response voltage of 8.5 V, which increases further with increasing voltage. Only at approx. 10.5 V does the steeply rising curve change to a characteristic of lower steepness. This characteristic curve is not desirable for relays.
  • a spring tongue 41 is shown schematically in FIG. 4 which, following its clamping point, first has a continuously curved section 42 with the radius R and then up to free end has a straight portion 43. Otherwise, the structure is comparable to that of Figure 1.
  • the armature electrode 5 and the base electrode 11 each extend over the full length of the spring tongue.
  • FIG. 4b shows the spring tongue 41 in the tightened state, the contact pieces lying one on top of the other and the contact force being generated by the deflection of the partially cut contact spring area 9. (A small distance is drawn between the base substrate and the armature substrate in FIGS. 4, 6 and 8, which in reality is only limited to the thickness of an insulating layer?)
  • FIGS. 5a and 5b show the switching characteristics of an arrangement according to FIG. 4. Shown is the movement of point 44 at the end of contact spring area 9 (curve a44) and the movement of fork point 45 when connecting the contact spring area (curve a45) as a function of the control voltage.
  • FIG. 5b also shows the course of the contact force F as a function of the control voltage (curve f4). It shows a switching characteristic with hysteresis and clear tilting processes both when closing and when opening the contact. Up to the response voltage of approximately 12 V, the spring moves in a quadratic dependence on the voltage by approximately 10 to 20% of the initial deflection and switches suddenly when the response voltage is exceeded. The relapse occurs at about 4 V. According to FIG.
  • a contact force of about 0.28 mN is achieved at the response voltage of 12 V. Then the force increases with a reduced gradient.
  • the length of the curved zone 42 should be approximately 20 to 40% of the total spring length of the spring tongue 41.
  • FIG. 6 shows an embodiment of a spring tongue 61 in which the geometric discontinuity consists in an offset of the electrodes.
  • the armature electrode 62 does not begin at the clamping point or connection point of the spring tongue on the armature substrate like the armature electrode 5 shown previously 1, but has an offset L with respect to this connection point. Accordingly, the start of the base electrode 63 can also be offset by the amount L without it being important.
  • FIG. 6a shows the idle state of the arrangement, that is to say without a control voltage
  • FIG. 6b shows the tightened state, that is to say when a control voltage is present between the electrodes 62 and 63.
  • FIG. 7 shows the sequence of movements at contact point 64 at the end of spring tongue 61 (curve a64) and in FIG. 7b the course of the contact force (curve f6).
  • the offset electrode according to FIG. 6 reduces the active electrode area, so that the response voltage is increased compared to FIG. 3; in the example of the simulation, it is approximately 18 V.
  • the offset length L should be selected approximately in the range from 20 to 40% of the length of the spring tongue 61.
  • FIG. 9 Another embodiment of a spring tongue with discontinuity is shown in FIG.
  • a spring tongue 81 is provided with a continuous curvature over its entire length and with an armature electrode 82 extending over its entire length.
  • the geometric discontinuity here is that the base electrode 83 is offset downward by a distance d in the base substrate 10, so that a gap of the thickness d arises in relation to the clamping point of the spring tongue 81.
  • FIGS. 9b and 9b there is also an increase in the response voltage with an arrangement according to FIG. 8 with clear tilting states for opening and closing the contact.
  • the response voltage is 14 V here, with all geometric data being comparable to the previous exemplary embodiments.
  • FIG. 9a shows the course of movement at contact point 84 (curve a84) and at fork point 85 (curve a85), similar to the illustration in FIG. 5.
  • the course of the contact force is shown in FIG. 9b (curve f8).

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  • Micromachines (AREA)
  • Drying Of Semiconductors (AREA)
EP95115647A 1994-10-18 1995-10-04 Relais micromécanique électrostatique Expired - Lifetime EP0713235B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4437261 1994-10-18
DE4437261A DE4437261C1 (de) 1994-10-18 1994-10-18 Mikromechanisches elektrostatisches Relais

Publications (2)

Publication Number Publication Date
EP0713235A1 true EP0713235A1 (fr) 1996-05-22
EP0713235B1 EP0713235B1 (fr) 1998-02-25

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Family Applications (1)

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EP95115647A Expired - Lifetime EP0713235B1 (fr) 1994-10-18 1995-10-04 Relais micromécanique électrostatique

Country Status (4)

Country Link
US (1) US5629565A (fr)
EP (1) EP0713235B1 (fr)
JP (1) JPH08255546A (fr)
DE (2) DE4437261C1 (fr)

Cited By (1)

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KR100339185B1 (ko) * 1998-10-30 2002-05-31 포만 제프리 엘 공핍 스트랩 반도체 메모리 디바이스

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DE29613790U1 (de) * 1996-08-09 1996-09-26 Festo Kg, 73734 Esslingen Mikroschalter
DE19646667C2 (de) * 1996-11-12 1998-11-12 Fraunhofer Ges Forschung Verfahren zum Herstellen eines mikromechanischen Relais
DE19730715C1 (de) * 1996-11-12 1998-11-26 Fraunhofer Ges Forschung Verfahren zum Herstellen eines mikromechanischen Relais
DE19736674C1 (de) * 1997-08-22 1998-11-26 Siemens Ag Mikromechanisches elektrostatisches Relais und Verfahren zu dessen Herstellung
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US6320145B1 (en) * 1998-03-31 2001-11-20 California Institute Of Technology Fabricating and using a micromachined magnetostatic relay or switch
US6046659A (en) * 1998-05-15 2000-04-04 Hughes Electronics Corporation Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications
DE19823690C1 (de) * 1998-05-27 2000-01-05 Siemens Ag Mikromechanisches elektrostatisches Relais
US6535722B1 (en) 1998-07-09 2003-03-18 Sarnoff Corporation Television tuner employing micro-electro-mechanically-switched tuning matrix
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DE19935819B4 (de) * 1999-07-29 2004-08-05 Tyco Electronics Logistics Ag Relais und Verfahren zu dessen Herstellung
US6275320B1 (en) 1999-09-27 2001-08-14 Jds Uniphase, Inc. MEMS variable optical attenuator
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US6407478B1 (en) * 2000-08-21 2002-06-18 Jds Uniphase Corporation Switches and switching arrays that use microelectromechanical devices having one or more beam members that are responsive to temperature
US6485273B1 (en) 2000-09-01 2002-11-26 Mcnc Distributed MEMS electrostatic pumping devices
JP2002075156A (ja) 2000-09-01 2002-03-15 Nec Corp マイクロスイッチおよびその製造方法
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Publication number Priority date Publication date Assignee Title
KR100339185B1 (ko) * 1998-10-30 2002-05-31 포만 제프리 엘 공핍 스트랩 반도체 메모리 디바이스

Also Published As

Publication number Publication date
EP0713235B1 (fr) 1998-02-25
DE4437261C1 (de) 1995-10-19
US5629565A (en) 1997-05-13
DE59501491D1 (de) 1998-04-02
JPH08255546A (ja) 1996-10-01

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