EP0707294A1 - Miroir pour un détecteur d'intrusion à infrarouge et détecteur d'intrusion à infrarouge avec un agencement de miroirs - Google Patents

Miroir pour un détecteur d'intrusion à infrarouge et détecteur d'intrusion à infrarouge avec un agencement de miroirs Download PDF

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Publication number
EP0707294A1
EP0707294A1 EP94115948A EP94115948A EP0707294A1 EP 0707294 A1 EP0707294 A1 EP 0707294A1 EP 94115948 A EP94115948 A EP 94115948A EP 94115948 A EP94115948 A EP 94115948A EP 0707294 A1 EP0707294 A1 EP 0707294A1
Authority
EP
European Patent Office
Prior art keywords
mirror
layer
radiation
reflection layer
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP94115948A
Other languages
German (de)
English (en)
Inventor
Dieter Wieser
Martin Dr. Allemann
René Lange
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Building Technologies AG
Original Assignee
Cerberus AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cerberus AG filed Critical Cerberus AG
Priority to EP94115948A priority Critical patent/EP0707294A1/fr
Priority to US08/538,578 priority patent/US5608220A/en
Publication of EP0707294A1 publication Critical patent/EP0707294A1/fr
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B13/00—Burglar, theft or intruder alarms
    • G08B13/18—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength
    • G08B13/189—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems
    • G08B13/19—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems using infrared-radiation detection systems
    • G08B13/193—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems using infrared-radiation detection systems using focusing means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S250/00—Radiant energy
    • Y10S250/01—Passive intrusion detectors

Definitions

  • the invention is in the field of passive infrared intrusion detectors, which are known detectors for the detection of movements of people and objects in a specific room based on the infrared radiation they emit.
  • Such infrared penetration detectors contain one or more infrared-sensitive sensors, each with two or more pyroelectric sensor elements, which emit an electrical signal when the incident infrared radiation changes.
  • the infrared radiation enters the detector housing through an infrared-transparent entry window and is focused on the sensor elements by suitable optical elements.
  • these optical elements are concave mirrors or Fresnel lenses consisting of several mirror surfaces, which are simultaneously designed as entrance windows.
  • infrared intrusion detectors are provided with various optical filters, for example with interference filters, which are preferably arranged on the pyro sensors.
  • a similar effect can be achieved by roughening the mirror surface, the roughness of the mirror surfaces causing infrared selectivity. This has the effect that infrared radiation of the desired wavelength focuses on the sensor elements, while the stray light is diffusely scattered.
  • Such a roughened mirror surface is described for example in EP-A-0 617 389.
  • Both types of scatter filters have in common that their effect on the signal of the pyro sensor depends in a relatively complicated manner on the geometry of the detector (e.g. mirror geometry, aperture of the pyro sensor, distance of the sensor from the mirror).
  • the present invention relates to a mirror for an infrared intrusion detector for focusing radiation incident from a specific direction onto at least one pyroelectric sensor element.
  • This mirror should be designed in such a way that undesired stray light does not surely reach the at least one sensor element, so that false alarms triggered by stray light radiation cannot occur.
  • the mirror has a carrier layer made of dark material and a reflection layer applied to it, which is transparent on the one hand for interference radiation below the wavelength range of human thermal radiation and on the other hand strongly reflects radiation from the mentioned wavelength range.
  • dark material means a material that absorbs well above a wavelength of approximately 4 ⁇ m.
  • the reflective layer is transparent in the visible range and allows infrared radiation of small wavelengths, preferably those below 4 - 7 ⁇ m, so that it can get into the dark carrier layer, where it is absorbed.
  • a first preferred exemplary embodiment of the mirror according to the invention is characterized in that the reflection layer is formed by a doped semiconductor layer, preferably a so-called ITO layer.
  • ITO stands for indium tin oxide (indium tin oxide).
  • ITO is an n-type semiconductor with a very wide band gap of 3.3 eV, which can be doped so strongly that the free plasma wavelength comes into the near infrared.
  • Another advantage of the ITO layer is that it is hard, i.e. wear-resistant, and chemically inert. The latter means that the mentioned properties of the mirror according to the invention are practically unchangeable during its lifetime.
  • a second preferred exemplary embodiment is characterized in that the reflection layer is formed by a very thin metal layer or by a multilayer interference filter.
  • Gold or another noble metal is particularly suitable for the metal layer, and zinc sulfide or germanium, for example, can be used as a multilayer interference filter.
  • Another preferred exemplary embodiment of the mirror according to the invention is characterized in that the dark carrier layer consists of black plastic or metal.
  • the invention further relates to an infrared intrusion detector with a mirror arrangement which contains a mirror of the type mentioned and consists of at least one primary mirror and one secondary mirror.
  • the infrared intrusion detector according to the invention is characterized in that the secondary mirror is formed by the mirror having the carrier layer and the reflection layer.
  • the infrared penetration detector has a housing G, in which essentially a pyro sensor 1, an entry window 2 for the radiation falling on the detector from a room to be monitored and a mirror 3 are arranged.
  • the mirror 3 is used to focus the radiation incident on the pyrosensor 1 from the entrance window 2 through a certain active area.
  • the radiation falling through the entrance window 2 onto the mirror 3 is S e and the radiation reflected from the mirror 3 onto the pyrosensor 1 is included S r referred.
  • Such detectors belong to the prior art, so that a more detailed description of the detector structure can be dispensed with.
  • reference is made to the passive infrared detectors sold by Cerberus AG under the type designations DR413 / 414 and DR421 and to EP-A-0 361 224 ( US-A-4,990,783).
  • the feature which essentially distinguishes the infrared penetration detector shown from known detectors is formed by the mirror 3, which is composed of at least two layers, a carrier layer 4 and a reflection layer 5, the reflection layer being applied to the front surface of the carrier layer in the beam path.
  • a coating layer applied to the reflection layer 5 can be provided, which consists, for example, of MgF2.
  • the infrared drift detector does not contain a single mirror but rather a mirror arrangement consisting of at least one primary mirror and one secondary mirror, wherein the at least one primary mirror is acted upon by the incident radiation and reflects it onto the secondary mirror, which in turn focuses the radiation incident on it onto the pyro sensor 1.
  • the secondary mirror which is significantly smaller than the at least one primary mirror, is designed in the manner of the mirror 3.
  • the reflection layer 5 is a so-called heat mirror and, on the one hand, has a high reflectivity for "warm” radiation, that is to say infrared radiation in the range of 4 .mu.m-15 .mu.m typical for human heat radiation, and on the other hand it is transparent for the radiation below about 4 .mu.m. The latter also applies in particular to radiation from the range of the spectrum of visible light.
  • the reflection layer 5 is either a very thin metal layer, preferably a gold layer, or a multilayer interference filter made of zinc sulfide or germanium, or a doped semiconductor layer.
  • ITO indium tin oxide
  • ITO is an n-type semiconductor with a very wide band gap of 3.3 eV, which can be doped so strongly that the free plasma wavelength comes to lie in the near infrared.
  • the wavelength selectivity, or in other words, the filter property, of this layer is an exclusive material property.
  • the ITO layer forming the reflection layer is applied, for example, by reactive magnetron sputtering.
  • the carrier layer 4 consists of a dark plastic, preferably of a black ABS (acrylonitrile-butodiene-styrene polymer), or of a deep-drawn, black metal, the dark color serving to give the carrier layer 4 a good absorption capacity.
  • the effect of the doped semiconductor on the black carrier layer is based solely on the dielectric properties of the reflection layer 5. This means that the separation of those reflected from the reflection layer and the wavelengths it transmits occurs at the contact surface between air and reflection layer 5 and therefore, provided that the reflection layer 5 does not fall below a certain minimum thickness, is only very slightly dependent on this layer thickness.
  • ITO layer Another advantage of the ITO layer is that it is very hard and therefore resistant, and that it is also chemically inert. The latter has the consequence that the reflection properties and the filtering effect of the reflection layer do not change over years, so that properties of the reflection layer 5 which are constant over the life of the reflector can be assumed.
  • An infrared beam S e falling through the entrance window 2 onto the mirror 3 is either reflected by the reflection layer 5 and focused on the pyro sensor 1 (beam S r ) or it is transmitted through the reflection layer 5 and reaches the black carrier layer 4 (rays S a ) where it is completely absorbed.
  • the only criterion as to whether a beam S e falling on the mirror 3 is reflected or absorbed is its wavelength. If this is in the typical range of 4 ⁇ m to 15 ⁇ m for the heat radiation emitted by a person, then reflection occurs; if it is below about 4 ⁇ m, absorption takes place. This filter limit is determined by appropriate doping of the ITO layer forming the reflection layer 5.
  • the filtering effect of the "black" mirror 3 can be further enhanced by using a pigmented entrance window 2 that scatters the incident radiation S e depending on the wavelength.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Burglar Alarm Systems (AREA)
EP94115948A 1994-10-10 1994-10-10 Miroir pour un détecteur d'intrusion à infrarouge et détecteur d'intrusion à infrarouge avec un agencement de miroirs Ceased EP0707294A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP94115948A EP0707294A1 (fr) 1994-10-10 1994-10-10 Miroir pour un détecteur d'intrusion à infrarouge et détecteur d'intrusion à infrarouge avec un agencement de miroirs
US08/538,578 US5608220A (en) 1994-10-10 1995-10-03 Infrared intrusion detector with a multi-layer mirror

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94115948A EP0707294A1 (fr) 1994-10-10 1994-10-10 Miroir pour un détecteur d'intrusion à infrarouge et détecteur d'intrusion à infrarouge avec un agencement de miroirs

Publications (1)

Publication Number Publication Date
EP0707294A1 true EP0707294A1 (fr) 1996-04-17

Family

ID=8216372

Family Applications (1)

Application Number Title Priority Date Filing Date
EP94115948A Ceased EP0707294A1 (fr) 1994-10-10 1994-10-10 Miroir pour un détecteur d'intrusion à infrarouge et détecteur d'intrusion à infrarouge avec un agencement de miroirs

Country Status (2)

Country Link
US (1) US5608220A (fr)
EP (1) EP0707294A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0826987A1 (fr) * 1996-08-30 1998-03-04 Cerberus Ag Disque filtrant pour détecteur d'intrusion à infrarouge
WO2018163068A1 (fr) * 2017-03-06 2018-09-13 Tyco Fire & Security Gmbh Détecteur d'intrusion infrarouge passif

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064525A (en) * 1997-03-25 2000-05-16 Glaverbel Optical device including a dichromatic mirror
US6346705B1 (en) 1999-03-02 2002-02-12 Cordelia Lighting, Inc. Hidden PIR motion detector with mirrored optics
US6348691B1 (en) 1999-12-30 2002-02-19 Cordelia Lighting, Inc. Motion detector with extra-wide angle mirrored optics
US20020051286A1 (en) * 2000-10-27 2002-05-02 Honeywell, Inc. Wavlength specific coating for mirrored optics and method for reducing reflection of white light
EP1386298A1 (fr) * 2001-05-04 2004-02-04 Honeywell, Inc. Detecteur de mouvements optique presentant une zone de detection allongee et procede relatif a une zone de detection allongee dans un detecteur de mouvements optique
FR2845777B1 (fr) * 2002-10-11 2005-01-07 Commissariat Energie Atomique Dispositif optique produisant deux faisceaux capables d'atteindre un detecteur commun
JP4699285B2 (ja) 2006-05-29 2011-06-08 株式会社 長谷川電気工業所 空調設備における冷温水ポンプの運転制御方法
GB2453484B (en) 2006-07-27 2009-12-02 Visonic Ltd Passive infrared detectors
NL2000616C2 (nl) * 2007-04-26 2008-10-28 Gen Electric Bewakingsinrichting.
EP2104340A1 (fr) 2008-03-19 2009-09-23 Barco N.V. Imagerie thermique et visible combinée

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199218A (en) * 1977-07-28 1980-04-22 Heimann Gmbh Warm light reflector
US4245217A (en) * 1958-02-22 1981-01-13 Heimann Gmbh Passive infrared alarm device
US4321594A (en) * 1979-11-01 1982-03-23 American District Telegraph Company Passive infrared detector
JPS595683A (ja) * 1982-07-02 1984-01-12 Tohoku Richo Kk レ−ザ装置
EP0361224A1 (fr) 1988-09-22 1990-04-04 Cerberus Ag Détecteur d'intrusion à infrarouge
US4939359A (en) * 1988-06-17 1990-07-03 Pittway Corporation Intrusion detection system with zone location
EP0440112A2 (fr) 1990-01-26 1991-08-07 Cerberus Ag Détecteur de rayonnement et utilisation
EP0617389A1 (fr) 1993-03-26 1994-09-28 Cerberus Ag Détecteur d'intrusion

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949259A (en) * 1973-08-17 1976-04-06 U.S. Philips Corporation Light-transmitting, thermal-radiation reflecting filter
US4229066A (en) * 1978-09-20 1980-10-21 Optical Coating Laboratory, Inc. Visible transmitting and infrared reflecting filter
US4792685A (en) * 1987-04-29 1988-12-20 Masami Yamakawa Photoelectric sensor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4245217A (en) * 1958-02-22 1981-01-13 Heimann Gmbh Passive infrared alarm device
US4199218A (en) * 1977-07-28 1980-04-22 Heimann Gmbh Warm light reflector
US4321594A (en) * 1979-11-01 1982-03-23 American District Telegraph Company Passive infrared detector
JPS595683A (ja) * 1982-07-02 1984-01-12 Tohoku Richo Kk レ−ザ装置
US4939359A (en) * 1988-06-17 1990-07-03 Pittway Corporation Intrusion detection system with zone location
EP0361224A1 (fr) 1988-09-22 1990-04-04 Cerberus Ag Détecteur d'intrusion à infrarouge
US4990783A (en) 1988-09-22 1991-02-05 Cerberus A.G. Range insensitive infrared intrusion detector
EP0440112A2 (fr) 1990-01-26 1991-08-07 Cerberus Ag Détecteur de rayonnement et utilisation
EP0617389A1 (fr) 1993-03-26 1994-09-28 Cerberus Ag Détecteur d'intrusion

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 8, no. 84 (E - 239) 18 April 1984 (1984-04-18) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0826987A1 (fr) * 1996-08-30 1998-03-04 Cerberus Ag Disque filtrant pour détecteur d'intrusion à infrarouge
WO2018163068A1 (fr) * 2017-03-06 2018-09-13 Tyco Fire & Security Gmbh Détecteur d'intrusion infrarouge passif
GB2574527A (en) * 2017-03-06 2019-12-11 Tyco Fire & Security Gmbh Passive infra-red intrusion detector
US10902706B2 (en) 2017-03-06 2021-01-26 Tyco Fire & Security Gmbh Passive infra-red intrusion detector
GB2574527B (en) * 2017-03-06 2023-02-08 Tyco Fire & Security Gmbh Passive infra-red intrusion detector

Also Published As

Publication number Publication date
US5608220A (en) 1997-03-04

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