EP0698677B1 - Méthode pour le dorage de produits semi-finis en bandes, en particulier pour cadres de connexion - Google Patents

Méthode pour le dorage de produits semi-finis en bandes, en particulier pour cadres de connexion Download PDF

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Publication number
EP0698677B1
EP0698677B1 EP95111826A EP95111826A EP0698677B1 EP 0698677 B1 EP0698677 B1 EP 0698677B1 EP 95111826 A EP95111826 A EP 95111826A EP 95111826 A EP95111826 A EP 95111826A EP 0698677 B1 EP0698677 B1 EP 0698677B1
Authority
EP
European Patent Office
Prior art keywords
gold
current density
layer
thickness
leadframes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP95111826A
Other languages
German (de)
English (en)
Other versions
EP0698677A3 (fr
EP0698677A2 (fr
Inventor
Franz Dr. Kaspar
Norbert Dr. Normann
Gerd Schaudt
Thilo Uhrig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Doduco Contacts and Refining GmbH
Original Assignee
AMI Doduco GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE4436071A external-priority patent/DE4436071C2/de
Application filed by AMI Doduco GmbH filed Critical AMI Doduco GmbH
Publication of EP0698677A2 publication Critical patent/EP0698677A2/fr
Publication of EP0698677A3 publication Critical patent/EP0698677A3/fr
Application granted granted Critical
Publication of EP0698677B1 publication Critical patent/EP0698677B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/623—Porosity of the layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers

Definitions

  • the invention relates to a method for continuous, selective, galvanic gold plating of band-shaped semi-finished products, especially for lead frames for semiconductor technology.
  • bond flags their surface e.g. bondable through galvanic gold plating is. Bonding is a friction welding process with which thin wires are connected to the flags.
  • the requirements for galvanic gold plating are e.g. in the MIL specif. G-45204B.
  • the Gold layer on which is bonded is usually from high-purity fine gold baths on a nickel underlayer deposited.
  • the present invention is based on the object to show you a way how to do it under mass production conditions, namely when running at high speed Strip electroplating, reliable in terms of quality higher quality bondable surfaces, which is more reliable Enable bond connections.
  • the semi-finished product is in a first Step with a gold bath at higher current density and then in a further step with a gold bath treated at a lower current density. It has it has been shown that this is how gold surfaces receives, which are ideal for wire bonding and failures are much less common with bond connections to lead. It is another great advantage of the invention Process that the surface properties the gold layer regardless of its volume properties can be adjusted. That means but in no way that it depends on the bondability alone the surface properties would matter. The surface properties and the volume properties of the gold layer rather influence both in combination the bondability.
  • the bondability determines first Line through its surface structure, roughness, the Friction coefficient to the bond wire and also by their Purity. Volume properties and surface properties can be set independently and thereby the bondability can be optimized. Fortunately, is deposited with a high current density Not only to deposit gold layer economically, but also has a low low for bonding Hardness. The disadvantage here is that at high Speed more unwanted foreign substances also deposited and embedded in the gold layer and that the layer is more porous than a slow one, gold layer deposited with low current density. The one deposited at low speed In contrast, the surface layer is denser, has fewer defects and is characterized by less Foreign inclusions from what is favorable for bonding, and shows another friction behavior that is more favorable for bonding.
  • the current density with which the lower sub-layer deposits is preferably around one Factor 10 to 30 over the current density with which the thinner surface layer is deposited.
  • the deposition can take place in such a way that the band-shaped Semi-finished product passes through the same bath twice, the bathroom the first time with high and operated the second time with low current density becomes. But it is also quite possible to use the band-shaped Semi-finished products in a gear two in a row arranged to pass through gold baths, whereby the gold baths have the same chemical composition, for the targeted adjustment of layer properties, however can also be composed differently.
  • Coating apparatus are suitable e.g.
  • the attached drawing shows schematically the typical structure of a bond flag, consisting of a carrier 1 made of a copper-based alloy, which is first nickel-plated in a conventional manner with a layer thickness of 2 to 3 ⁇ m; the nickel layer is designated by the reference number 2 and serves as a diffusion barrier between the copper alloy and the gold layer, which is applied in two steps according to the invention: in a first step at a current density of 3 to 100 A / dm 2 , preferably at a current density of 5 up to 7 A / dm 2 , a 0.8 ⁇ m thick gold layer 3 is formed, onto which in a second step at a lower current density, for example at 0.3 to 1 A / dm 2 , preferably at a current density of 0.6 A / dm 2, a 0.2 ⁇ m thick surface layer 4 made of gold is deposited.
  • the deposition takes place from a fine gold bath of the usual composition, for example from a bath based on potassium gold cyanide or from a cyanide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Battery Electrode And Active Subsutance (AREA)

Claims (11)

  1. Procédé pour la dorure galvanique, sélective, continue de produits semi-finis en forme de rubans, en particulier pour des micropoutres pour la technologie des semi-conducteurs, caractérisé en ce que le produit semi-fini est traité dans une première étape avec un bain d'or à une densité de courant supérieure et ensuite dans une étape ultérieure avec un bain d'or à une densité de courant inférieure.
  2. Procédé selon la revendication 1, caractérisé en ce que la majeure partie de la couche d'or est réalisée avec la densité de courant supérieure.
  3. Procédé selon la revendication 1, caractérisé en ce qu'on obtient de 75 % à 90 % de l'épaisseur de la couche d'or avec la densité de courant supérieure.
  4. Procédé selon la revendication 1, caractérisé en ce qu'on obtient au maximum 0,4 µm, de préférence seulement 0,2 µm de l'épaisseur de la couche d'or avec la densité de courant inférieure.
  5. Procédé selon l'une quelconque des revendications précédentes, caractérisé en ce que les deux bains d'or utilisés dans les deux étapes sont identiques.
  6. Procédé selon la revendication 1, caractérisé en ce que, dans la première étape, la densité de courant se situe entre 3 A/dm2 et 100 A/dm2 et dans la deuxième étape la densité de courant se situe entre 0,3 A/dm2 et 1 A/dm2.
  7. Procédé selon la revendication 1, caractérisé en ce que, dans la première étape la densité de courant se situe entre 3 A/dm2 et 10 A/dm2 et dans la deuxième étape la densité de courant se situe entre 0,3 A/dm2 et 1 A/dm2.
  8. Micropoutre soumise à une dorure sélective pour la technologie des semi-conducteurs, caractérisée en ce que la couche d'or dans la couche partielle située à la surface présente une pureté supérieure et/ou une dureté supérieure à celles de la couche partielle sous-jacente, et en ce que les deux couches partielles de la couche d'or sont constituées d'or fin.
  9. Micropoutre selon la revendication 6, 7 ou 8, caractérisée en ce que la couche partielle située à la surface possède une épaisseur maximale de 0,3 µm, de préférence de seulement 0,2 µm.
  10. Micropoutre selon la revendication 8, caractérisée en ce que la couche partielle située à la surface représente de 10 % à 25 % de l'épaisseur de la couche d'or totale.
  11. Micropoutre selon l'une quelconque des revendications 8 à 10, caractérisée en ce que la couche partielle supérieure possède une épaisseur entre 0,15 et 0,4 µm, et la couche partielle inférieure possède une épaisseur entre 0,6 et 1,2 µm.
EP95111826A 1994-07-28 1995-07-28 Méthode pour le dorage de produits semi-finis en bandes, en particulier pour cadres de connexion Expired - Lifetime EP0698677B1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE4426862 1994-07-28
DE4426862 1994-07-28
DE4436071A DE4436071C2 (de) 1994-07-28 1994-10-10 Verfahren zum Vergolden von bandförmigem Halbzeug, insbesondere für Leadframes und nach dem Verfahren vergoldete Leadframes
DE4436071 1994-10-10

Publications (3)

Publication Number Publication Date
EP0698677A2 EP0698677A2 (fr) 1996-02-28
EP0698677A3 EP0698677A3 (fr) 1998-08-26
EP0698677B1 true EP0698677B1 (fr) 2002-10-09

Family

ID=25938782

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95111826A Expired - Lifetime EP0698677B1 (fr) 1994-07-28 1995-07-28 Méthode pour le dorage de produits semi-finis en bandes, en particulier pour cadres de connexion

Country Status (2)

Country Link
EP (1) EP0698677B1 (fr)
ES (1) ES2184776T3 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2147311B (en) * 1983-09-29 1987-10-21 Hara J B O Electrodepositing precious metal alloys
DE3683595D1 (de) * 1985-11-11 1992-03-05 Electroplating Eng Vorrichtung zum selektiven metallbeschichten von steckverbinderkontaktstiften.
DE3839223C2 (de) * 1988-11-19 1994-10-20 Degussa Vorrichtung zur selektiven galvanischen Beschichtung

Also Published As

Publication number Publication date
EP0698677A3 (fr) 1998-08-26
ES2184776T3 (es) 2003-04-16
EP0698677A2 (fr) 1996-02-28

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