EP0693573A1 - Production d'un film diamant - Google Patents

Production d'un film diamant Download PDF

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Publication number
EP0693573A1
EP0693573A1 EP95201897A EP95201897A EP0693573A1 EP 0693573 A1 EP0693573 A1 EP 0693573A1 EP 95201897 A EP95201897 A EP 95201897A EP 95201897 A EP95201897 A EP 95201897A EP 0693573 A1 EP0693573 A1 EP 0693573A1
Authority
EP
European Patent Office
Prior art keywords
layer
carbon
diamond
silicon carbide
containing compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP95201897A
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German (de)
English (en)
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EP0693573B1 (fr
Inventor
Matthew Simpson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Ceramics and Plastics Inc
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Saint Gobain Norton Industrial Ceramics Corp
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Publication date
Application filed by Saint Gobain Norton Industrial Ceramics Corp filed Critical Saint Gobain Norton Industrial Ceramics Corp
Publication of EP0693573A1 publication Critical patent/EP0693573A1/fr
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Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/276—Diamond only using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Definitions

  • This invention relates to synthetic diamond and, more particularly, to a method of making synthetic diamond film.
  • Diamond has a number of properties which make it attractive for use as window material, free-standing domes, or other planar and non-planar structures for various applications. Among these properties are extreme hardness and excellent transmissivity of certain radiation. Diamond is also an extraordinary heat conductor, thermally stable, and an electrical insulator. However, natural diamond is prohibitively expensive for applications which require any substantial size and is difficult to form into certain shapes.
  • CVD chemical vapor deposition
  • Graphite is such a material, and synthetic diamond film has been deposited, such as by chemical vapor deposition, on the surface of a graphite substrate. If necessary, the graphite can then be removed, leaving a free-standing diamond film or layer of a desired shape.
  • Graphite can be provided that has a coefficient of thermal expansion that is relatively close to that of diamond film, and in this respect it is favorable for deposition of diamond film.
  • diamond film generally does not deposit well on graphite because diamond deposition conditions tend to etch graphite, which leads to erosion of the substrate rather than deposition.
  • carbon-containing compounds which, for purposes hereof, means solid compounds that are thermally stable above at least 500°C and contain between 10 to 90 atomic% carbon
  • silicon carbide provides an advantageous and relatively inexpensive interlayer for CVD deposition of synthetic diamond on graphite.
  • the degree to which the synthetic diamond adheres to the coated graphite surface can be controlled by varying the carbon content of the carbon-containing compound from which the interlayer is formed.
  • the synthetic diamond when the interlayer is relatively rich in carbon (as compared to the stoichiometric compound), the synthetic diamond has relatively less adherence to the coated substrate, whereas when the interlayer is relatively lean in carbon (as compared to the stoichiometric compound), the synthetic diamond has relatively greater adherence to the coated graphite.
  • a method of making a diamond film which includes the steps of: providing a graphite substrate; forming a layer of a carbon-containing compound on a surface of the substrate; and depositing a synthetic diamond layer on the layer of carbon-containing compound.
  • the layer of a carbon-containing compound comprises a layer of silicon carbide.
  • the layer of silicon carbide is formed to a thickness in the range to a 25 to 250 ⁇ m.
  • the step of forming said layer of carbon-containing compound comprises controlling the carbon content of said compound to adjust the adherence of said diamond layer on said layer of carbon-containing compound.
  • the carbon content of the compound is preferably controlled to be rich or lean in carbon by at least 1 at% above or below, as the case may be, the stoichiometric carbon content.
  • Fig. 1 is an operational flow diagram of the steps of an embodiment of the method of the invention.
  • Fig. 2 illustrates a structure made in accordance with an embodiment of the invention.
  • Fig. 3 is a schematic diagram of a plasma jet deposition system which can be utilized for CVD deposition of synthetic diamond for use in an embodiment of the method of the invention.
  • the block 110 represents the providing of a graphite substrate.
  • the graphite material will have a relatively small pore size, for example a maximum pore size less than about 10 microns.
  • the graphite chosen should preferably have a coefficient of thermal expansion which substantially matches synthetic diamond.
  • the graphite substrate can be machined or otherwise formed into a desired shape.
  • the block 120 represents the polishing and cleaning of the substrate surface upon which diamond film is to be deposited. Polishing can be implemented, for example, by lapping, and the surface should preferably be polished smoother than the pore size.
  • the polished substrate surface can then be cleaned using an ultrasonic cleaner.
  • a layer or a carbide-containing compound preferably silicon carbide
  • the layer should preferably be continuous, free of pores, and seal off the pores of the polished graphite surface. It should also be relatively thin, to minimize thermal mismatch stress with regard to the diamond to be subsequently deposited. The preferred thickness is in the range 25 to 250 microns.
  • the silicon carbide adheres well to graphite, and good quality synthetic diamond can be deposited thereon.
  • the silicon carbide layer can be deposited by any suitable means, for example, vapor deposition, such as CVD.
  • the carbon content of the interlayer compound is selected to adjust the relative adherence of the synthetic diamond to be deposited thereon. It is the surface of the interlayer that largely controls adherence of the diamond, so the control of carbon content of the interlayer compound for the surface portion thereof, particularly the last 5 nm thereof, is more significant than the carbon content of the interlayer material below.
  • the block 140 represents selection of the carbon-content of the interlayer carbon-containing compound, particularly the surface portion thereof.
  • the block 160 represents the deposition of a diamond film over the layer of silicon carbide.
  • the diamond film is preferably deposited using a chemical vapor deposition (CVD) technique, for example the plasma jet deposition technique described in conjunction with Fig. 3.
  • CVD chemical vapor deposition
  • the deposited diamond film if not previously released, can then be removed from the substrate and the interlayer, such as by grinding away the graphite and removing the interlayer (block 180).
  • Fig. 2 illustrates the structure of a graphite substrate 10 (shown planar, although it can be any shape), the carbon-containing interlayer compound 30, and the synthetic diamond layer 50.
  • the silicon carbide interlayer of the present can be formed.
  • One such technique is to flow mixtures of halosilanes (e.g. SiCl4), hydrocarbons (e.g. CH4) and hydrogen over the graphite to be coated, which is heated to a temperatures of order 800C.
  • Control of the composition of the material being deposited can be achieved by varying the ratio of Si to C in the feed gases.
  • the graphite to be coated can be heated in an atmosphere containing silicon in a vapor form. The silicon is allowed to condense and react with the surface carbon to form SiC.
  • altering of the temperature can be used to affect the coating composition. A lower temperature will result in a coating richer in Si.
  • FIG. 3 there is shown a diagram of a plasma jet deposition system 200 of a type which can be utilized in practicing an embodiment of the invention.
  • the system 200 is contained within a housing 211 and includes an arc-forming section 215 which comprises a cylindrical cathode holder 294, a rod-like cathode 292, and an injector 295 mounted adjacent the cathode so as to permit injected fluid to pass over the cathode 292.
  • a cylindrical anode is represented at 291.
  • the input fluid may be a mixture of hydrogen and methane.
  • the anode 291 and cathode 292 are energized by a source of electric potential (not shown), for example a DC potential.
  • Cylindrical magnets are utilized to control the plasma generated at the arc forming section.
  • the magnets maintain the plasma within a narrow column until the hot gases reach the deposition region 60.
  • Optional cooling coils 234, in which a coolant can be circulated, can be located within the magnets.
  • a mixture of hydrogen and methane is fed to the injector 295, and a plasma is obtained in front of the arc forming section and accelerated and focused toward the deposition region.
  • the temperature and pressure at the plasma formation region are typically in the approximate ranges 1500-15,000 degrees C and 100-700 torr, respectively, and in the deposition region are in the approximate ranges 800-1100 degrees C and 0.1-200 torr, respectively.
  • synthetic polycrystalline diamond can be formed from the described plasma, as the carbon in the methane is selectively deposited as diamond, and the graphite which forms is dissipated by combination with the hydrogen facilitating gas.
  • U.S. Patent No.s 4,471,003, 4,487,162, and 5,204,144 For further description of plasma jet deposition systems, reference can be made to U.S. Patent No.s 4,471,003, 4,487,162, and 5,204,144. It will be understood that other suitable types of deposition equipment, including other types of CVD plasma deposition equipment, can be used in conjunction with the
  • the bottom portion 105A of the chamber has a base 106 on which can be mounted the graphite substrate 10 with the silicon carbide interlayer 30 on which the synthetic diamond is to be deposited.
  • the base can include a temperature controller. It will be understood that other diamond deposition techniques can be used.
  • the substrate can be tilted and rotated during deposition as described, for example, in U.S. Patent No. 5,204,144.
  • a disk 12cm diameter by 1.2cm thick was fabricated from IG-11 graphite.
  • the disk was coated with SiC using a vapor phase process, but at the end of the process, the proportion of C was adjusted to be higher than that required to achieve the SiC stoichiometry.
  • Diamond was deposited on the coating substrate under the following conditions: Deposition temperature: 925 Pressure: 7.3 torr Enthalpy: 45-53 kJ/g %CH4: 0.1% until the diamond reached a thickness of about 50um. The run was stopped and the diamond detached from the coated substrate, permitting the coated substrate to be used again.
  • the silicon carbide coating for this example was analyzed by EDAX (energy dispersive analysis of x-rays) in an electron microscope and compared to a sample whose composition was at SiC stoichiometry.
  • the K-alpha Si peak was reduced in intensity relative to the standard by 7.4%, suggesting that the silicon content of the surface layer was at least 7.4% lower than stoichiometric SiC; i.e., the C content was at least 53.7 at%.
  • a disk 12cm diameter by 1.2cm thick was fabricated from IG-11 graphite. Three fine grooves were machined into it at radii of 5, 5.3, 5.6cm. The grooves were less than 1mm wide and deep and served to arrest the propagation of cracks from the edge into the center.
  • the disk was coated with SiC using a vapor phase process, but at the end of the process, the proportion of Si was adjusted to be higher than that required to achieve the SiC stoichiometry. Diamond was deposited on the coated substrate under the following conditions: Deposition temperature: 1025-1080 Pressure: 15 torr Enthalph: 43 kJ/g % CH4: 0.15% until the diamond reached a thickness of about 200 ⁇ m.
  • the silicon carbide coating for this example was analyzed by EDAX (energy dispersive analysis of x-rays) in an electron microscope and compared to a sample whose composition was at SiC stoichiometry. The K-alpha Si peak was 26.8% more intense than the standard, suggesting that the silicon content of the surface layer was at least 63.4 at%.
  • a disk 12 cm dia by 1.2cm thick was fabricated froma grade of graphite with expansion similar to IG-11 and coated with silicon carbide using the second of the two above-described methods.
  • Diamond was deposited on the coated substrate under the following conditions. Deposition temperature: 1000C Pressure: 8.5 torr Enthalpy: 35 kJ/g %CH4: 0.1%
  • a diamond coating at least 200 ⁇ m thick was formed on the substrate. It The run was stopped and the diamond remained firmly adhered to the substrate. The diamond was examined and no cracks were found in it.
  • the coating of this example had a rougher surface than the coatings of the two previous examples, precluding a quantitative EDAX analysis.
  • the composition appeared closer to the SiC standard than the other two coatings. No other elements were detected at significant levels.
  • the coating for example 3 looked greenish, which color is associated with relatively pure silicon carbide (Kirk-Othmer Encyclopedia of Chemical Technology, v1, p33). From this and from the EDAX analysis, we conclude this coating was close to pure SiC and hence has composition 50 at% Si, 50 at% C.
  • the coating for example 2 (silicon rich) had a silvery color and the coating for example 1 (carbon rich) appeared darker than example 2, but still shiny. No color was evident in either coating.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
EP95201897A 1994-07-18 1995-07-11 Production d'un film diamant Expired - Lifetime EP0693573B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/276,672 US5527559A (en) 1994-07-18 1994-07-18 Method of depositing a diamond film on a graphite substrate
US276672 1994-07-18

Publications (2)

Publication Number Publication Date
EP0693573A1 true EP0693573A1 (fr) 1996-01-24
EP0693573B1 EP0693573B1 (fr) 2000-04-05

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EP95201897A Expired - Lifetime EP0693573B1 (fr) 1994-07-18 1995-07-11 Production d'un film diamant

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US (1) US5527559A (fr)
EP (1) EP0693573B1 (fr)
JP (1) JP3435258B2 (fr)
CA (1) CA2152769C (fr)
DE (1) DE69516053T2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0812932A2 (fr) * 1996-06-12 1997-12-17 Saint-Gobain Industrial Ceramics, Inc. Production d'un film de diamant
EP0854403A2 (fr) 1997-01-16 1998-07-22 Montres Rado S.A. Verre de montre inrayable et transparent et boíte de montre équipée d'un tel verre
EP0860515A1 (fr) * 1997-02-20 1998-08-26 De Beers Industrial Diamond Division (Proprietary) Limited Corps revêtu de diamant
EP0916745A1 (fr) * 1997-11-04 1999-05-19 Saint-Gobain Industrial Ceramics, Inc. Mandrin en deux parties avec bague en graphite pour le dépÔt de diamant

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US5654044A (en) * 1995-08-29 1997-08-05 The United States Of America As Represented By The Secretary Of The Navy Diamond film deposition on graphite
US6312808B1 (en) 1999-05-03 2001-11-06 Guardian Industries Corporation Hydrophobic coating with DLC & FAS on substrate
US6280834B1 (en) 1999-05-03 2001-08-28 Guardian Industries Corporation Hydrophobic coating including DLC and/or FAS on substrate
US6368664B1 (en) 1999-05-03 2002-04-09 Guardian Industries Corp. Method of ion beam milling substrate prior to depositing diamond like carbon layer thereon
US6475573B1 (en) 1999-05-03 2002-11-05 Guardian Industries Corp. Method of depositing DLC inclusive coating on substrate
US6261693B1 (en) 1999-05-03 2001-07-17 Guardian Industries Corporation Highly tetrahedral amorphous carbon coating on glass
US6447891B1 (en) 1999-05-03 2002-09-10 Guardian Industries Corp. Low-E coating system including protective DLC
US6335086B1 (en) 1999-05-03 2002-01-01 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6461731B1 (en) 1999-05-03 2002-10-08 Guardian Industries Corp. Solar management coating system including protective DLC
US6277480B1 (en) 1999-05-03 2001-08-21 Guardian Industries Corporation Coated article including a DLC inclusive layer(s) and a layer(s) deposited using siloxane gas, and corresponding method
EP1960564A1 (fr) * 2005-12-13 2008-08-27 United Technologies Corporation Procede pour le depot de carbone amorphe
US7939367B1 (en) 2008-12-18 2011-05-10 Crystallume Corporation Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate
JP6938468B2 (ja) 2015-09-08 2021-09-22 マサチューセッツ インスティテュート オブ テクノロジー グラフェンベースの層転写のためのシステム及び方法
CN105624642A (zh) * 2016-03-16 2016-06-01 大连理工大学 一种石墨衬底上直接沉积金刚石薄膜的方法
US9991113B2 (en) 2016-06-03 2018-06-05 Massachusetts Institute Of Technology Systems and methods for fabricating single-crystalline diamond membranes
KR20190073558A (ko) 2016-11-08 2019-06-26 메사추세츠 인스티튜트 오브 테크놀로지 층 전달을 위한 전위 필터링 시스템 및 방법들
CN106744931B (zh) * 2016-12-09 2018-11-02 哈尔滨工业大学 一种等离子体刻蚀石墨制备金刚石颗粒的方法
WO2018156877A1 (fr) 2017-02-24 2018-08-30 Massachusetts Institute Of Technology Appareil et procédés pour réseau plan focal incurvé
CN111254409A (zh) * 2018-12-03 2020-06-09 核工业西南物理研究院 面向等离子体的金刚石膜第一壁制备方法
CN111763924B (zh) * 2020-06-18 2022-10-18 太原理工大学 碳化硅-二氧化硅/金刚石多层复合自支撑膜及制备方法
CN114751408B (zh) * 2022-03-25 2023-09-05 浙江工业大学 一种低压下基于石墨制备金刚石的方法

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EP0556615A2 (fr) * 1992-02-17 1993-08-25 Norton Company Méthode pour la fabrication de diamants synthétiques
RU2006538C1 (ru) * 1992-07-14 1994-01-30 Акционерное общество "Компакт Лтд" Способ выращивания алмазов
EP0653394A1 (fr) * 1993-11-12 1995-05-17 Le Carbone Lorraine Traitement de surface de matériau carboné pour rendre adhérent un dépôt ultérieur de diamant et pièces revêtues de diamant obtenues

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0812932A2 (fr) * 1996-06-12 1997-12-17 Saint-Gobain Industrial Ceramics, Inc. Production d'un film de diamant
EP0812932A3 (fr) * 1996-06-12 2000-02-23 Saint-Gobain Industrial Ceramics, Inc. Production d'un film de diamant
EP0854403A2 (fr) 1997-01-16 1998-07-22 Montres Rado S.A. Verre de montre inrayable et transparent et boíte de montre équipée d'un tel verre
EP0860515A1 (fr) * 1997-02-20 1998-08-26 De Beers Industrial Diamond Division (Proprietary) Limited Corps revêtu de diamant
EP0916745A1 (fr) * 1997-11-04 1999-05-19 Saint-Gobain Industrial Ceramics, Inc. Mandrin en deux parties avec bague en graphite pour le dépÔt de diamant

Also Published As

Publication number Publication date
JP3435258B2 (ja) 2003-08-11
JPH0859393A (ja) 1996-03-05
DE69516053T2 (de) 2000-12-14
CA2152769C (fr) 2001-06-19
DE69516053D1 (de) 2000-05-11
EP0693573B1 (fr) 2000-04-05
US5527559A (en) 1996-06-18
CA2152769A1 (fr) 1996-01-19

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