EP0667640A3 - Produit à multicouches laminé et procédé de fabrication associé. - Google Patents

Produit à multicouches laminé et procédé de fabrication associé. Download PDF

Info

Publication number
EP0667640A3
EP0667640A3 EP95300251A EP95300251A EP0667640A3 EP 0667640 A3 EP0667640 A3 EP 0667640A3 EP 95300251 A EP95300251 A EP 95300251A EP 95300251 A EP95300251 A EP 95300251A EP 0667640 A3 EP0667640 A3 EP 0667640A3
Authority
EP
European Patent Office
Prior art keywords
multilayer laminate
laminate product
product
multilayer
laminate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP95300251A
Other languages
German (de)
English (en)
Other versions
EP0667640A2 (fr
Inventor
Joseph P Mennucci
Charles R Mead
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Materion Brush Inc
Original Assignee
Materion Brush Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materion Brush Inc filed Critical Materion Brush Inc
Publication of EP0667640A2 publication Critical patent/EP0667640A2/fr
Publication of EP0667640A3 publication Critical patent/EP0667640A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4839—Assembly of a flat lead with an insulating support, e.g. for TAB
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/404—Manganese or rhenium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/405—Iron metal group, e.g. Co or Ni
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
EP95300251A 1994-01-14 1995-01-16 Produit à multicouches laminé et procédé de fabrication associé. Withdrawn EP0667640A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18228894A 1994-01-14 1994-01-14
US182288 1994-01-14

Publications (2)

Publication Number Publication Date
EP0667640A2 EP0667640A2 (fr) 1995-08-16
EP0667640A3 true EP0667640A3 (fr) 1997-05-14

Family

ID=22667821

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95300251A Withdrawn EP0667640A3 (fr) 1994-01-14 1995-01-16 Produit à multicouches laminé et procédé de fabrication associé.

Country Status (4)

Country Link
US (3) US5686190A (fr)
EP (1) EP0667640A3 (fr)
JP (2) JPH0837257A (fr)
CA (1) CA2140311A1 (fr)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2140311A1 (fr) * 1994-01-14 1995-07-15 Joseph P. Mennucci Lamelle multicouche et son procede de fabrication
US5777259A (en) * 1994-01-14 1998-07-07 Brush Wellman Inc. Heat exchanger assembly and method for making the same
US6022426A (en) * 1995-05-31 2000-02-08 Brush Wellman Inc. Multilayer laminate process
WO1997029216A1 (fr) * 1996-02-09 1997-08-14 Brush Wellman Inc. Alliage c11004
US5760473A (en) * 1996-06-25 1998-06-02 Brush Wellman Inc. Semiconductor package having a eutectic bonding layer
US6056186A (en) * 1996-06-25 2000-05-02 Brush Wellman Inc. Method for bonding a ceramic to a metal with a copper-containing shim
KR100214549B1 (ko) * 1996-12-30 1999-08-02 구본준 버텀리드 반도체 패키지
US5995367A (en) * 1997-12-18 1999-11-30 Eastman Kodak Company Heat exchanger having an extruded, tiered heat sink
US6036081A (en) * 1997-12-24 2000-03-14 Wyman Gordon Fabrication of metallic articles using precursor sheets
TW477437U (en) * 1998-06-23 2002-02-21 Foxconn Prec Components Co Ltd Assembled-type CPU heat sink
EP0992430A3 (fr) * 1998-10-07 2000-09-13 Negesat Di Boer Fabrizio & C. SNC Boítier avec réfrigeration pour équipement à bord d'un véhicule aérien ou spatial
GB2342772A (en) * 1998-10-13 2000-04-19 Kuo Ching Sung Heat dissipating device
US6141219A (en) * 1998-12-23 2000-10-31 Sundstrand Corporation Modular power electronics die having integrated cooling apparatus
US6442039B1 (en) * 1999-12-03 2002-08-27 Delphi Technologies, Inc. Metallic microstructure springs and method of making same
US6337794B1 (en) * 2000-02-11 2002-01-08 International Business Machines Corporation Isothermal heat sink with tiered cooling channels
AU2001279284A1 (en) * 2000-07-05 2002-01-14 Capricorn Pharma, Inc Rapid-melt semi-solid compositions, methods of making same and methods of using same
US7776454B2 (en) 2001-12-14 2010-08-17 EMS Solutions, Inc. Ti brazing strips or foils
US6722002B1 (en) * 2001-12-14 2004-04-20 Engineered Materials Solutions, Inc. Method of producing Ti brazing strips or foils
US6684501B2 (en) * 2002-03-25 2004-02-03 International Business Machines Corporation Foil heat sink and a method for fabricating same
US8464781B2 (en) 2002-11-01 2013-06-18 Cooligy Inc. Cooling systems incorporating heat exchangers and thermoelectric layers
JP3896961B2 (ja) * 2002-12-12 2007-03-22 ソニー株式会社 熱輸送装置および熱輸送装置の製造方法
US6710128B1 (en) * 2002-12-13 2004-03-23 Eastman Chemical Company Process to produce an aqueous composition
US20040190245A1 (en) * 2003-03-31 2004-09-30 Murli Tirumala Radial heat sink with skived-shaped fin and methods of making same
US7591302B1 (en) 2003-07-23 2009-09-22 Cooligy Inc. Pump and fan control concepts in a cooling system
US6842342B1 (en) * 2003-09-12 2005-01-11 Leohab Enterprise Co., Ltd. Heat sink
JP4014549B2 (ja) * 2003-09-18 2007-11-28 富士電機システムズ株式会社 ヒートシンク及びその製造方法
US7537151B2 (en) 2004-01-21 2009-05-26 Delphi Technologies, Inc. Method of making high performance heat sinks
US7549460B2 (en) * 2004-04-02 2009-06-23 Adaptivenergy, Llc Thermal transfer devices with fluid-porous thermally conductive core
US20050224212A1 (en) * 2004-04-02 2005-10-13 Par Technologies, Llc Diffusion bonded wire mesh heat sink
CN100389371C (zh) * 2004-09-16 2008-05-21 中芯国际集成电路制造(上海)有限公司 具有低待机电流的调压器用器件和方法
US20070223196A1 (en) * 2006-03-22 2007-09-27 Ming-Sho Kuo Composite heatsink plate assembly
WO2007137095A2 (fr) * 2006-05-16 2007-11-29 Nanoconduction, Inc. Structures à base de nanotubes et procédés d'élimination de la chaleur à partir de dispositifs à semi-conducteurs
US7719839B2 (en) * 2007-02-19 2010-05-18 Dell Products L.P. Heat conduction apparatus providing for selective configuration for heat conduction
US7736187B2 (en) * 2007-03-20 2010-06-15 Tyco Electronics Corporation Electrical connector assemblies and joint assemblies and methods for using the same
WO2008137143A1 (fr) * 2007-05-02 2008-11-13 Cooligy Inc. Conception de radiateur à contre-courant à microtube/multivoies pour applications de refroidissement électronique
US9297571B1 (en) 2008-03-10 2016-03-29 Liebert Corporation Device and methodology for the removal of heat from an equipment rack by means of heat exchangers mounted to a door
US20110073292A1 (en) * 2009-09-30 2011-03-31 Madhav Datta Fabrication of high surface area, high aspect ratio mini-channels and their application in liquid cooling systems
US20130058042A1 (en) * 2011-09-03 2013-03-07 Todd Richard Salamon Laminated heat sinks
US9425124B2 (en) 2012-02-02 2016-08-23 International Business Machines Corporation Compliant pin fin heat sink and methods
US9322096B2 (en) * 2012-05-25 2016-04-26 Empire Technology Development Llc Copper substrate for deposition of graphene
FR2997644B1 (fr) * 2012-11-08 2015-05-15 Technicatome Procede de soudage par diffusion
CN203013703U (zh) * 2012-12-17 2013-06-19 中怡(苏州)科技有限公司 散热元件及应用该散热元件的通讯装置
DE102015224464A1 (de) * 2015-12-07 2017-06-08 Aurubis Stolberg Gmbh & Co. Kg Kupfer-Keramik-Substrat, Kupferhalbzeug zur Herstellung eines Kupfer-Keramik-Substrats und Verfahren zur Herstellung eines Kupfer-Keramik-Substrats
DE102017128316B4 (de) * 2017-11-29 2019-12-05 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5020586A (en) * 1989-09-08 1991-06-04 Hewlett-Packard Company Air-cooled heat exchanger for electronic circuit modules
EP0485205A2 (fr) * 1990-11-09 1992-05-13 Kabushiki Kaisha Toshiba Drain thermique et méthode pour le fabriquer
US5125451A (en) * 1991-04-02 1992-06-30 Microunity Systems Engineering, Inc. Heat exchanger for solid-state electronic devices

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2269523A (en) * 1937-05-31 1942-01-13 Ellis Miller Process for cladding metals and the product thereof
US3110571A (en) * 1958-07-01 1963-11-12 Du Pont Ceramic material bonded to metal having refractory oxide dispersed therein
US3091028A (en) * 1960-09-02 1963-05-28 Gen Electric Method and alloy for bonding to nonmetallic refractory members
US3226822A (en) * 1961-09-27 1966-01-04 Eitel Mccullough Inc Art of bonding ceramic to metal
NL6803692A (fr) * 1968-03-15 1968-05-27
US3668755A (en) * 1971-01-25 1972-06-13 Mallory & Co Inc P R Bonding of metallic members with lithium and lithium containing alloys
US3736649A (en) * 1971-04-01 1973-06-05 Gen Electric Method of making ceramic-to-metal seal
US3668758A (en) * 1971-07-08 1972-06-13 Richard H Krock Bonding of metallic members with alkali metals and alkali metal containing alloys
US3744120A (en) * 1972-04-20 1973-07-10 Gen Electric Direct bonding of metals with a metal-gas eutectic
US3854892A (en) * 1972-04-20 1974-12-17 Gen Electric Direct bonding of metals with a metal-gas eutectic
US3766634A (en) * 1972-04-20 1973-10-23 Gen Electric Method of direct bonding metals to non-metallic substrates
US3993411A (en) * 1973-06-01 1976-11-23 General Electric Company Bonds between metal and a non-metallic substrate
US3911553A (en) * 1974-03-04 1975-10-14 Gen Electric Method for bonding metal to ceramic
US4129243A (en) * 1975-07-30 1978-12-12 General Electric Company Double side cooled, pressure mounted semiconductor package and process for the manufacture thereof
US3994430A (en) * 1975-07-30 1976-11-30 General Electric Company Direct bonding of metals to ceramics and metals
US4267279A (en) * 1979-07-27 1981-05-12 Koppers Company, Inc. Polyester composition stabilized against gel-time drift with amine salt and method for making same
DE3036128C2 (de) * 1980-09-25 1983-08-18 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten Verbinden von Kupferfolien mit Oxidkeramiksubstraten
US4413766A (en) * 1981-04-03 1983-11-08 General Electric Company Method of forming a conductor pattern including fine conductor runs on a ceramic substrate
US4409278A (en) * 1981-04-16 1983-10-11 General Electric Company Blister-free direct bonding of metals to ceramics and metals
US4420509A (en) * 1981-08-11 1983-12-13 Glasteel Tennessee, Inc. Copper-clad polyester-glass fiber laminates
EP0083697B1 (fr) * 1981-10-19 1987-09-09 Nec Corporation Laser à hétérostructure plane enterrée comportant deux gorges
DE3204167A1 (de) * 1982-02-06 1983-08-11 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von metallstuecken mit oxidkeramiksubstraten
US4500029A (en) * 1982-06-11 1985-02-19 General Electric Company Electrical assembly including a conductor pattern bonded to a non-metallic substrate and method of fabricating such assembly
DE3376829D1 (en) * 1982-06-29 1988-07-07 Toshiba Kk Method for directly bonding ceramic and metal members and laminated body of the same
JPS59117144A (ja) * 1982-12-23 1984-07-06 Toshiba Corp リ−ドフレ−ムおよびその製造方法
US4538170A (en) * 1983-01-03 1985-08-27 General Electric Company Power chip package
US4649083A (en) * 1983-02-17 1987-03-10 Olin Corporation Electrical component forming process
US4506108A (en) * 1983-04-01 1985-03-19 Sperry Corporation Copper body power hybrid package and method of manufacture
US4646129A (en) * 1983-09-06 1987-02-24 General Electric Company Hermetic power chip packages
JPS60131874A (ja) * 1983-12-19 1985-07-13 三菱重工業株式会社 セラミツクと金属との接合方法
US4669535A (en) * 1985-08-07 1987-06-02 North American Specialties Corp. Heat sink formed of stacked fin elements
US4811166A (en) * 1986-07-02 1989-03-07 Texas Instruments Incorporated Heat dissipating member for mounting a semiconductor device and electrical circuit unit incorporating the member
DE3633907A1 (de) * 1986-08-02 1988-02-04 Altan Akyuerek Verfahren zum haftfesten verbinden eines kupferkoerpers mit einem substrat
US4809135A (en) * 1986-08-04 1989-02-28 General Electric Company Chip carrier and method of fabrication
JPS6389477A (ja) * 1986-10-02 1988-04-20 古河電気工業株式会社 Ｃｕ系部材をセラミツクス基体に直接接合する方法
JPS63166774A (ja) * 1986-12-27 1988-07-09 同和鉱業株式会社 銅板とアルミナ基板との接合体の製造方法
JPS63224242A (ja) * 1987-03-13 1988-09-19 Hitachi Ltd 熱伝達装置
US4731701A (en) * 1987-05-12 1988-03-15 Fairchild Semiconductor Corporation Integrated circuit package with thermal path layers incorporating staggered thermal vias
DE3854682T2 (de) * 1987-05-26 1996-04-25 Nippon Steel Corp Eisen-Kupfer-Chrom-Legierung für einen hochfesten Leiterrahmen oder ein Steckstiftgitter und Verfahren zu ihrer Herstellung.
FR2623046B1 (fr) * 1987-11-10 1990-03-23 Telemecanique Electrique Procede de liaison d'une feuille de cuivre a un substrat en materiau electriquement isolant
US4990720A (en) * 1988-04-12 1991-02-05 Kaufman Lance R Circuit assembly and method with direct bonded terminal pin
JPH01272183A (ja) * 1988-04-25 1989-10-31 Toshiba Corp セラミックス回路基板
US5040292A (en) * 1988-07-07 1991-08-20 Texas Instruments Incorporated Method of forming dielectric layer on a metal substrate having improved adhesion
JPH07502B2 (ja) * 1989-03-01 1995-01-11 同和鉱業株式会社 非酸化物系セラミックスのメタライズ方法
US5126511A (en) * 1989-06-13 1992-06-30 Texas Instruments Incorporated Copper cored enclosures for hybrid circuits
US5036584A (en) * 1989-06-13 1991-08-06 Texas Instruments Incorporated Method of manufacture of copper cored enclosures for hybrid circuits
US4996116A (en) * 1989-12-21 1991-02-26 General Electric Company Enhanced direct bond structure
US5097385A (en) * 1990-04-18 1992-03-17 International Business Machines Corporation Super-position cooling
JP3011433B2 (ja) * 1990-05-25 2000-02-21 株式会社東芝 セラミックス回路基板の製造方法
US5168348A (en) * 1991-07-15 1992-12-01 International Business Machines Corporation Impingment cooled compliant heat sink
DE69209042T2 (de) * 1991-12-16 1996-10-02 At & T Corp Wärmeabfuhr durch engkanälige Kühlrippen um elektronisches Hochleistungskomponenten zu kühlen
US5303555A (en) * 1992-10-29 1994-04-19 International Business Machines Corp. Electronics package with improved thermal management by thermoacoustic heat pumping
JPH06349989A (ja) * 1992-12-21 1994-12-22 Internatl Business Mach Corp <Ibm> 熱伝達冷却装置
US5269372A (en) * 1992-12-21 1993-12-14 International Business Machines Corporation Intersecting flow network for a cold plate cooling system
US5380956A (en) * 1993-07-06 1995-01-10 Sun Microsystems, Inc. Multi-chip cooling module and method
US5386339A (en) * 1993-07-29 1995-01-31 Hughes Aircraft Company Monolithic microelectronic circuit package including low-temperature-cofired-ceramic (LTCC) tape dielectric structure and in-situ heat sink
US5370178A (en) * 1993-08-25 1994-12-06 International Business Machines Corporation Convertible cooling module for air or water cooling of electronic circuit components
CA2140311A1 (fr) * 1994-01-14 1995-07-15 Joseph P. Mennucci Lamelle multicouche et son procede de fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5020586A (en) * 1989-09-08 1991-06-04 Hewlett-Packard Company Air-cooled heat exchanger for electronic circuit modules
EP0485205A2 (fr) * 1990-11-09 1992-05-13 Kabushiki Kaisha Toshiba Drain thermique et méthode pour le fabriquer
US5125451A (en) * 1991-04-02 1992-06-30 Microunity Systems Engineering, Inc. Heat exchanger for solid-state electronic devices

Also Published As

Publication number Publication date
EP0667640A2 (fr) 1995-08-16
US5686190A (en) 1997-11-11
JPH0837257A (ja) 1996-02-06
US5583317A (en) 1996-12-10
JPH11121664A (ja) 1999-04-30
CA2140311A1 (fr) 1995-07-15
US5525753A (en) 1996-06-11

Similar Documents

Publication Publication Date Title
EP0667640A3 (fr) Produit à multicouches laminé et procédé de fabrication associé.
HUP9901061A3 (en) Multilayered sheet, process for the production thereof and use thereof
EP0773102A4 (fr) Stratifie multicouche et utilisation
EP0710544A3 (fr) Produit multicouche et procédé pour sa fabrication
ZA969957B (en) Laminate material
AU3772095A (en) Multi-layer molded article and method for producing the same
ZA938314B (en) Laminating method and products made thereby
EP0622179A3 (en) A packaging laminate and a method of producing the same.
EP0699643A3 (fr) Articles liés et procédé de leur fabrication
AU683962B2 (en) Laminate and production process thereof
SG94696A1 (en) Laminated board and process for production thereof
AU2465695A (en) Structure forming method, apparatus and the resulting product
AU4657293A (en) Laminated product and process for making the same
EP0658410A3 (fr) Objet moulé multicouche et procédé pour le fabriquer.
GB9500839D0 (en) Laminate assemblies
SG75834A1 (en) Laminate and process for producing the same
EP0621188A3 (fr) Barquette multicouches pour denrées alimentaires et son procédé d&#39;obtention.
ZA972432B (en) Layered product.
ZA968745B (en) Laminated products
AU2432595A (en) Structure forming method, apparatus and the product
GB9400805D0 (en) Composite articles
EP0681978A3 (fr) Procédé et dispositif pour produire des languettes de déchirement.
GB2295351B (en) Composite articles
EP0648598A3 (fr) Procédé et dispositif pour la fabrication des produits multicouches et produit multicouche.
GB9110872D0 (en) Laminate forming means,methods and laminated products

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): BE CH DE FR GB IT LI NL SE

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): BE CH DE FR GB IT LI NL SE

17P Request for examination filed

Effective date: 19970620

17Q First examination report despatched

Effective date: 19971030

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 19990508