EP0650112B1 - Source de courant constante - Google Patents

Source de courant constante Download PDF

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Publication number
EP0650112B1
EP0650112B1 EP94115731A EP94115731A EP0650112B1 EP 0650112 B1 EP0650112 B1 EP 0650112B1 EP 94115731 A EP94115731 A EP 94115731A EP 94115731 A EP94115731 A EP 94115731A EP 0650112 B1 EP0650112 B1 EP 0650112B1
Authority
EP
European Patent Office
Prior art keywords
constant current
field effect
source
effect transistors
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP94115731A
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German (de)
English (en)
Other versions
EP0650112A3 (fr
EP0650112A2 (fr
Inventor
Michael Dipl.-Ing. Ludwig
Rolf Dipl.-Ing. Reber
Heinz-Peter Dr.-Ing. Feldle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Daimler Benz Aerospace AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daimler Benz Aerospace AG filed Critical Daimler Benz Aerospace AG
Publication of EP0650112A2 publication Critical patent/EP0650112A2/fr
Publication of EP0650112A3 publication Critical patent/EP0650112A3/fr
Application granted granted Critical
Publication of EP0650112B1 publication Critical patent/EP0650112B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Definitions

  • the invention is based on a constant current source the preamble of claim 1.
  • Constant current source For many circuit arrangements, especially in electronics, a constant current source is required. This owns a very high internal resistance, theoretically should be infinite. A realization of one Constant current source is with the help of semiconductor devices possible, e.g. as a so-called current mirror circuit, e.g. from Meinke, Gundlach: Taschenbuch der Hochfrequenztechnik, 4th edition (1986), pp. M22-M23.
  • the invention has for its object a generic Specify constant current source using at least a field effect transistor in integrated technology can be produced.
  • a first advantage of the invention is that in technically simple and inexpensive way a predeterminable Constant current is adjustable.
  • a second advantage is that the set Constant current is almost independent of the manufacturing process of the field effect transistors and hence their electrical properties.
  • a third advantage is that the set one Constant current is almost independent of temperature-dependent electrical properties of the field effect transistors.
  • a fourth advantage is that only one Type of field effect transistor is necessary.
  • a fifth advantage is that in addition to the two field effect transistors only ohmic resistors are needed, which are integrated in a cost-effective manner Technology can be produced.
  • a sixth advantage is that the following described circuit arrangement in a reliable and inexpensive Way in GaAs technology integrated circuits e.g. High-frequency circuits, can be integrated is.
  • the figure shows two n-channel JFETs A1, A2, which are produced on a semiconductor substrate in the same manufacturing process. Both JFETs A1, A2 have essentially the same pinch-off voltage U p and essentially the same saturation current I DSS .
  • the latter is chosen to be substantially larger than the constant current I const to be set , for example I DSS > 5 ⁇ I const .
  • the voltage source for example a 7 volt voltage source, one pole (+) is connected to the (circuit) ground M, so that a negative voltage source arises.
  • the second JFET A2 is connected as a current source.
  • its drain D2 is connected to ground M
  • gate G2 and source S2 are connected to one another and connected to a connection of the resistor network R4 to R6, the other connection of which is connected to the minus pole (-) of the voltage source Sp.
  • the ohmic resistor network R4 to R6 consists of a series connection of the ohmic resistors R4, R5, which are bridged by the ohmic resistor R6. If the drain current I D2 now flows through this resistance network, a control voltage U GS is generated at the resistor R5 which is dependent on the latter and the drain current I D2 and by means of which the constant current I const flowing through the first JFET A1 can be set.
  • the gate G1 of the first JFET A1 is connected to the minus pole (-), to which there is also a connection of the resistor R5.
  • Source S1 is at the other terminal of resistor R5.
  • Drain D1 is connected to a terminal P1 to which a circuit arrangement through which the constant current I const is to flow can be connected.
  • a circuit arrangement through which the constant current I const is to flow can be connected.
  • a related source S1 negative voltage U GS at the gate G1 which optimally controls JFET A1.
  • the second JFET A2 therefore always measures the current saturation current I DSS , which depends in particular on the production process and the current temperature, and in particular is converted by the resistor R5 into a voltage U GS controlling the first JFET A1. It can be seen that the desired constant current I const is adjustable by changing the resistance R5 in particular.
  • the constant current I const remains essentially unchanged with unchanged resistance values of the resistors R4 to R6, even if the pinch-off voltage U p and the saturation current I DSS change within a wide range, for example -1.4 V ⁇ U p ⁇ -1 V; 6m A ⁇ I DSS ⁇ 8.5 mA.
  • resistor network R4 to R6 can therefore be calculated as a function of the desired constant current I const .
  • the resistors R4 to R6 can therefore be manufactured, for example, in an integrated form without subsequent adjustment.
  • Such large tolerance ranges occur in particular of GaAs technology, especially for high and / or High frequency circuits, e.g. so-called millimeter wave circuits.
  • the circuit arrangement described is can be produced in MESFET technology for GaAs technology, so that advantageously an integration in monolithic and / or built-in hybrid integrated high-frequency components is possible. With the arrangement described is for example a level converter circuit producible in the submitted on the same day German patent application P .. .. ... (internal file number: UL 93 / 39b) is described in more detail.
  • the invention is not limited to the exemplary embodiment described, but can be applied analogously to others.
  • the resistors R4, R5 can be designed as a potentiometer, the center tap of which is connected to the source S1 of the first JFET A1. In this way, the constant current I const can be set continuously within predefinable limits.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)

Claims (7)

  1. Source à courant constant à courant constant réglable, qui est généré à l'aide d'au moins un composant semiconducteur, caractérisée
    en ce qu'un diviseur de tension est prévu, se composant d'un montage série d'un second transistor à effet de champ (A2) monté en tant que source de courant, avec les bornes source (S2), drain (D2) ainsi que grille (G2), le drain (D2) étant relié à un pôle (M) d'une source de tension (Sp), la source (S2) et la grille (G2) étant réunies, et au moins d'une résistance ohmique réglable (R4 à R6), dont une borne est reliée à la source (S2) et dont l'autre borne est reliée à l'autre pôle (-) de la source de tension (Sp),
    en ce qu'un premier transistor à effet de champ (A1) est prévu, dont la grille (G1) est reliée à l'autre pôle (-) de la source de tension (Sp), dont la source (S1) est reliée à la résistance (R4 à R6) de telle sorte qu'entre la grille (G1) et la source (S2) existe une résistance (R5) qui est choisie en fonction du courant constant (Iconst) à régler, qui circule à travers le drain (D1), dont le drain (D1) peut être relié à un composant qui est déterminé pour le courant constant (Iconst),
    en ce que, dans le cas des deux transistors à effet de champ à couche d'arrêt (A1, A2), le courant à saturation (IDSS) se comporte proportionnellement à la tension de coupure (Up) et
    en ce que les deux transistors à effet de champ (A1, A2) présentent un comportement électrique identique.
  2. Source à courant constant selon la revendication 1, caractérisée en ce que la résistance réglable (R4 à R6) se compose d'un montage en série de deux résistances (R4, R5), sur lequel est montée en parallèle la résistance (R6).
  3. Source à courant constant selon la revendication 1 ou la revendication 2, caractérisée en ce que les deux transistors à effet de champ (A1, A2) possèdent un courant à saturation (IDSS), qui est sensiblement supérieur au courant constant maximal à régler (Iconst).
  4. Source à courant constant selon l'une quelconque des revendications précédentes, caractérisée en ce que les transistors à effet de champ (A1, A2) sont réalisés en tant que transistors intégrés.
  5. Source à courant constant selon l'une quelconque des revendications précédentes, caractérisé en ce que les transistors à effet de champ sont réalisés en tant que transistors à effet de champ à couche d'arrêt.
  6. Source à courant constant selon l'une quelconque des revendications précédentes, caractérisée en ce qu'au moins les transistors à effet de champ à couche d'arrêt (A1, A2) sont réalisés selon la technologie GaAs.
  7. Source à courant constant selon l'une quelconque des revendications précédentes, caractérisée en ce qu'au moins les transistors à effet de champ à couche d'arrêt (A1, A2) sont réalisés selon la technologie MESFET.
EP94115731A 1993-10-20 1994-10-06 Source de courant constante Expired - Lifetime EP0650112B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4335683A DE4335683A1 (de) 1993-10-20 1993-10-20 Konstantstromquelle
DE4335683 1993-10-20

Publications (3)

Publication Number Publication Date
EP0650112A2 EP0650112A2 (fr) 1995-04-26
EP0650112A3 EP0650112A3 (fr) 1995-08-30
EP0650112B1 true EP0650112B1 (fr) 1998-08-05

Family

ID=6500532

Family Applications (1)

Application Number Title Priority Date Filing Date
EP94115731A Expired - Lifetime EP0650112B1 (fr) 1993-10-20 1994-10-06 Source de courant constante

Country Status (4)

Country Link
US (1) US5488328A (fr)
EP (1) EP0650112B1 (fr)
DE (2) DE4335683A1 (fr)
ES (1) ES2121595T3 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4335684A1 (de) * 1993-10-20 1995-04-27 Deutsche Aerospace Treiberschaltung zur Erzeugung einer Schaltspannung
EP0748047A1 (fr) * 1995-04-05 1996-12-11 Siemens Aktiengesellschaft Circuit tampon intégré
US5903177A (en) * 1996-09-05 1999-05-11 The Whitaker Corporation Compensation network for pinch off voltage sensitive circuits
US5864230A (en) * 1997-06-30 1999-01-26 Lsi Logic Corporation Variation-compensated bias current generator
US5977813A (en) * 1997-10-03 1999-11-02 International Business Machines Corporation Temperature monitor/compensation circuit for integrated circuits
JP3629939B2 (ja) 1998-03-18 2005-03-16 セイコーエプソン株式会社 トランジスタ回路、表示パネル及び電子機器
DE19830356C1 (de) * 1998-07-07 1999-11-11 Siemens Ag Verfahren zum Abgleichen eines Widerstands in einer integrierten Schaltung und Vorrichtung zur Durchführung dieses Verfahrens
US6046579A (en) * 1999-01-11 2000-04-04 National Semiconductor Corporation Current processing circuit having reduced charge and discharge time constant errors caused by variations in operating temperature and voltage while conveying charge and discharge currents to and from a capacitor
DE19940382A1 (de) 1999-08-25 2001-03-08 Infineon Technologies Ag Stromquelle für niedrige Betriebsspannungen mit hohem Ausgangswiderstand
US7333156B2 (en) * 1999-08-26 2008-02-19 Canadian Space Agency Sequential colour visual telepresence system
GB0811483D0 (en) * 2008-06-23 2008-07-30 Xipower Ltd Improvements in and relating to self oscillating flyback circuits

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1061124A1 (ru) * 1982-01-25 1983-12-15 Osipov Yurij V Стабилизатор посто нного тока
JPH0640290B2 (ja) * 1985-03-04 1994-05-25 株式会社日立製作所 安定化電流源回路
US4716356A (en) * 1986-12-19 1987-12-29 Motorola, Inc. JFET pinch off voltage proportional reference current generating circuit
US4760284A (en) * 1987-01-12 1988-07-26 Triquint Semiconductor, Inc. Pinchoff voltage generator
US4868416A (en) * 1987-12-15 1989-09-19 Gazelle Microcircuits, Inc. FET constant reference voltage generator
GB2211322A (en) * 1987-12-15 1989-06-28 Gazelle Microcircuits Inc Circuit for generating reference voltage and reference current
JP2753266B2 (ja) * 1988-06-20 1998-05-18 株式会社日立製作所 半導体回路
US4820968A (en) * 1988-07-27 1989-04-11 Harris Corporation Compensated current sensing circuit
US5065043A (en) * 1990-03-09 1991-11-12 Texas Instruments Incorporated Biasing circuits for field effect transistors using GaAs FETS

Also Published As

Publication number Publication date
EP0650112A3 (fr) 1995-08-30
US5488328A (en) 1996-01-30
DE4335683A1 (de) 1995-04-27
EP0650112A2 (fr) 1995-04-26
DE59406607D1 (de) 1998-09-10
ES2121595T3 (es) 1998-12-01

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