EP0650112A2 - Source de courant constante - Google Patents

Source de courant constante Download PDF

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Publication number
EP0650112A2
EP0650112A2 EP94115731A EP94115731A EP0650112A2 EP 0650112 A2 EP0650112 A2 EP 0650112A2 EP 94115731 A EP94115731 A EP 94115731A EP 94115731 A EP94115731 A EP 94115731A EP 0650112 A2 EP0650112 A2 EP 0650112A2
Authority
EP
European Patent Office
Prior art keywords
constant current
source
effect transistors
current source
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP94115731A
Other languages
German (de)
English (en)
Other versions
EP0650112A3 (fr
EP0650112B1 (fr
Inventor
Michael Dipl.-Ing. Ludwig
Rolf Dipl.-Ing. Reber
Heinz-Peter Dr.-Ing. Feldle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Daimler Benz Aerospace AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daimler Benz Aerospace AG filed Critical Daimler Benz Aerospace AG
Publication of EP0650112A2 publication Critical patent/EP0650112A2/fr
Publication of EP0650112A3 publication Critical patent/EP0650112A3/fr
Application granted granted Critical
Publication of EP0650112B1 publication Critical patent/EP0650112B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Definitions

  • the invention is based on a constant current source according to the preamble of patent claim 1.
  • a constant current source is required for many circuit arrangements, particularly in electronics. This has a very high internal resistance, which should theoretically be infinite.
  • Such a constant current source can be implemented with the aid of semiconductor components, e.g. as a so-called current mirror circuit, which e.g. from Meinke, Gundlach: Taschenbuch der Hochfrequenztechnik, 4th edition (1986), pp. M22-M23, is known.
  • the invention has for its object a generic Specify constant current source that can be produced with the help of at least one field effect transistor in integrated technology.
  • a first advantage of the invention is that a predeterminable constant current can be set in a technically simple and inexpensive manner.
  • a second advantage is that the constant current set is almost independent of the manufacturing process of the field effect transistors and thus their electrical properties.
  • a third advantage is that the constant current that is set is largely independent of the temperature-dependent electrical properties of the field-effect transistors.
  • a fourth advantage is that only a single type of field effect transistor is required.
  • a fifth advantage is that, in addition to the two field-effect transistors, only ohmic resistors are required, which can be produced inexpensively using integrated technology.
  • a sixth advantage is that the circuitry described below is reliable and inexpensive in integrated circuits made with GaAs technology e.g. High-frequency circuits that can be integrated.
  • FET field effect transistor
  • the figure shows two n-channel JFETs A1, A2, which are produced on a semiconductor substrate in the same manufacturing process. Both JFETs A1, A2 have essentially the same pinch-off voltage U p and essentially the same saturation current I DSS . The latter is chosen to be substantially larger than the constant current I const to be set , for example I. DSS > 5 ⁇ I const .
  • the voltage source for example a 7 volt voltage source, one pole (+) is connected to the (circuit) ground M, so that a negative voltage source arises.
  • the second JFET A2 is connected as a current source.
  • its drain D2 is connected to ground M
  • gate G2 and source S2 are connected to one another and connected to a connection of the resistor network R4 to R6, the other connection of which is connected to the minus pole (-) of the voltage source Sp.
  • the ohmic resistor network R4 to R6 consists of a series connection of the ohmic resistors R4, R5, which are bridged by the ohmic resistor R6. If the drain current I D2 now flows through this resistance network, a control voltage U GS is generated at the resistor R5 which is dependent on the latter and the drain current I D2 and by means of which the constant current I const flowing through the first JFET A1 can be set.
  • the gate G1 of the first JFET A1 is connected to the minus pole (-), to which there is also a connection of the resistor R5.
  • Source S1 is at the other terminal of resistor R5.
  • Drain D1 is connected to a terminal P1 to which a circuit arrangement through which the constant current I const is to flow can be connected.
  • a circuit arrangement through which the constant current I const is to flow can be connected.
  • a related source S1 negative voltage U GS at the gate G1 which optimally controls JFET A1.
  • the second JFET A2 thus always measures the current saturation current I DSS , which depends in particular on the production process and the current temperature, and in particular by means of the resistor R5 the first JFET A1 controlling voltage U GS converted. It can be seen that the desired constant current I const is adjustable by changing the resistance R5 in particular.
  • the constant current I const remains essentially unchanged with unchanged resistance values of the resistors R4 to R6, even if the pinch-off voltage U p and the saturation current I DSS change within a wide range, for example -1.4 V ⁇ U p ⁇ -1 V; 6m A ⁇ I DSS ⁇ 8.5 mA.
  • resistor network R4 to R6 can therefore be calculated as a function of the desired constant current I const .
  • the resistors R4 to R6 can therefore be manufactured, for example, in an integrated form without subsequent adjustment.
  • Such large tolerance ranges occur particularly in GaAs technology, especially in high and / or Maximum frequency circuits, for example so-called millimeter wave circuits.
  • the circuit arrangement described can be produced in MESFET technology for GaAs technology, so that integration in monolithic and / or hybrid-integrated high-frequency components is advantageously possible.
  • a level converter circuit can be produced, which is described in more detail in German patent application P (internal file number: UL 93 / 39b) filed on the same day.
  • the invention is not limited to the exemplary embodiment described, but can be applied analogously to others.
  • the resistors R4, R5 can be designed as a potentiometer, the center tap of which is connected to the source S1 of the first JFET A1. In this way, the constant current I const can be set continuously within predefinable limits.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
EP94115731A 1993-10-20 1994-10-06 Source de courant constante Expired - Lifetime EP0650112B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4335683 1993-10-20
DE4335683A DE4335683A1 (de) 1993-10-20 1993-10-20 Konstantstromquelle

Publications (3)

Publication Number Publication Date
EP0650112A2 true EP0650112A2 (fr) 1995-04-26
EP0650112A3 EP0650112A3 (fr) 1995-08-30
EP0650112B1 EP0650112B1 (fr) 1998-08-05

Family

ID=6500532

Family Applications (1)

Application Number Title Priority Date Filing Date
EP94115731A Expired - Lifetime EP0650112B1 (fr) 1993-10-20 1994-10-06 Source de courant constante

Country Status (4)

Country Link
US (1) US5488328A (fr)
EP (1) EP0650112B1 (fr)
DE (2) DE4335683A1 (fr)
ES (1) ES2121595T3 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009156715A1 (fr) * 2008-06-23 2009-12-30 Xipower Limited Circuit de retour de ligne auto-oscillant

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4335684A1 (de) * 1993-10-20 1995-04-27 Deutsche Aerospace Treiberschaltung zur Erzeugung einer Schaltspannung
EP0748047A1 (fr) * 1995-04-05 1996-12-11 Siemens Aktiengesellschaft Circuit tampon intégré
US5903177A (en) * 1996-09-05 1999-05-11 The Whitaker Corporation Compensation network for pinch off voltage sensitive circuits
US5864230A (en) * 1997-06-30 1999-01-26 Lsi Logic Corporation Variation-compensated bias current generator
US5977813A (en) * 1997-10-03 1999-11-02 International Business Machines Corporation Temperature monitor/compensation circuit for integrated circuits
JP3629939B2 (ja) * 1998-03-18 2005-03-16 セイコーエプソン株式会社 トランジスタ回路、表示パネル及び電子機器
DE19830356C1 (de) * 1998-07-07 1999-11-11 Siemens Ag Verfahren zum Abgleichen eines Widerstands in einer integrierten Schaltung und Vorrichtung zur Durchführung dieses Verfahrens
US6046579A (en) * 1999-01-11 2000-04-04 National Semiconductor Corporation Current processing circuit having reduced charge and discharge time constant errors caused by variations in operating temperature and voltage while conveying charge and discharge currents to and from a capacitor
DE19940382A1 (de) * 1999-08-25 2001-03-08 Infineon Technologies Ag Stromquelle für niedrige Betriebsspannungen mit hohem Ausgangswiderstand
US7333156B2 (en) * 1999-08-26 2008-02-19 Canadian Space Agency Sequential colour visual telepresence system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2211322A (en) * 1987-12-15 1989-06-28 Gazelle Microcircuits Inc Circuit for generating reference voltage and reference current
GB2211321A (en) * 1987-12-15 1989-06-28 Gazelle Microcircuits Inc Circuit for generating constant voltage
EP0353039A1 (fr) * 1988-07-27 1990-01-31 General Electric Company Circuit de mesure compensée de courant
US5065043A (en) * 1990-03-09 1991-11-12 Texas Instruments Incorporated Biasing circuits for field effect transistors using GaAs FETS
US5166553A (en) * 1988-06-20 1992-11-24 Hitachi, Ltd. Current mirror circuit employing depletion mode FETs

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1061124A1 (ru) * 1982-01-25 1983-12-15 Osipov Yurij V Стабилизатор посто нного тока
JPH0640290B2 (ja) * 1985-03-04 1994-05-25 株式会社日立製作所 安定化電流源回路
US4716356A (en) * 1986-12-19 1987-12-29 Motorola, Inc. JFET pinch off voltage proportional reference current generating circuit
US4760284A (en) * 1987-01-12 1988-07-26 Triquint Semiconductor, Inc. Pinchoff voltage generator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2211322A (en) * 1987-12-15 1989-06-28 Gazelle Microcircuits Inc Circuit for generating reference voltage and reference current
GB2211321A (en) * 1987-12-15 1989-06-28 Gazelle Microcircuits Inc Circuit for generating constant voltage
US5166553A (en) * 1988-06-20 1992-11-24 Hitachi, Ltd. Current mirror circuit employing depletion mode FETs
EP0353039A1 (fr) * 1988-07-27 1990-01-31 General Electric Company Circuit de mesure compensée de courant
US5065043A (en) * 1990-03-09 1991-11-12 Texas Instruments Incorporated Biasing circuits for field effect transistors using GaAs FETS

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEE PROCEEDINGS G. ELECTRONIC CIRCUITS & SYSTEMS, Bd. 137, Nr. 2, PART G, 1.April 1990 Seiten 101-108, XP 000102777 TOUMAZOU C ET AL 'DESIGN AND APPLICATION OF GAAS MESFET CURRENT MIRROR CIRCUITS' *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009156715A1 (fr) * 2008-06-23 2009-12-30 Xipower Limited Circuit de retour de ligne auto-oscillant
GB2473407A (en) * 2008-06-23 2011-03-09 Xipower Ltd Self oscillating flyback circuit
GB2473407B (en) * 2008-06-23 2012-08-01 Xipower Ltd Self oscillating flyback circuit

Also Published As

Publication number Publication date
DE59406607D1 (de) 1998-09-10
EP0650112A3 (fr) 1995-08-30
ES2121595T3 (es) 1998-12-01
US5488328A (en) 1996-01-30
EP0650112B1 (fr) 1998-08-05
DE4335683A1 (de) 1995-04-27

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