EP0650112A2 - Constant-current source - Google Patents

Constant-current source Download PDF

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Publication number
EP0650112A2
EP0650112A2 EP94115731A EP94115731A EP0650112A2 EP 0650112 A2 EP0650112 A2 EP 0650112A2 EP 94115731 A EP94115731 A EP 94115731A EP 94115731 A EP94115731 A EP 94115731A EP 0650112 A2 EP0650112 A2 EP 0650112A2
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EP
European Patent Office
Prior art keywords
constant current
source
effect transistors
current source
field effect
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Granted
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EP94115731A
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German (de)
French (fr)
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EP0650112A3 (en
EP0650112B1 (en
Inventor
Michael Dipl.-Ing. Ludwig
Rolf Dipl.-Ing. Reber
Heinz-Peter Dr.-Ing. Feldle
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Airbus Defence and Space GmbH
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Daimler Benz Aerospace AG
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Definitions

  • the invention is based on a constant current source according to the preamble of patent claim 1.
  • a constant current source is required for many circuit arrangements, particularly in electronics. This has a very high internal resistance, which should theoretically be infinite.
  • Such a constant current source can be implemented with the aid of semiconductor components, e.g. as a so-called current mirror circuit, which e.g. from Meinke, Gundlach: Taschenbuch der Hochfrequenztechnik, 4th edition (1986), pp. M22-M23, is known.
  • the invention has for its object a generic Specify constant current source that can be produced with the help of at least one field effect transistor in integrated technology.
  • a first advantage of the invention is that a predeterminable constant current can be set in a technically simple and inexpensive manner.
  • a second advantage is that the constant current set is almost independent of the manufacturing process of the field effect transistors and thus their electrical properties.
  • a third advantage is that the constant current that is set is largely independent of the temperature-dependent electrical properties of the field-effect transistors.
  • a fourth advantage is that only a single type of field effect transistor is required.
  • a fifth advantage is that, in addition to the two field-effect transistors, only ohmic resistors are required, which can be produced inexpensively using integrated technology.
  • a sixth advantage is that the circuitry described below is reliable and inexpensive in integrated circuits made with GaAs technology e.g. High-frequency circuits that can be integrated.
  • FET field effect transistor
  • the figure shows two n-channel JFETs A1, A2, which are produced on a semiconductor substrate in the same manufacturing process. Both JFETs A1, A2 have essentially the same pinch-off voltage U p and essentially the same saturation current I DSS . The latter is chosen to be substantially larger than the constant current I const to be set , for example I. DSS > 5 ⁇ I const .
  • the voltage source for example a 7 volt voltage source, one pole (+) is connected to the (circuit) ground M, so that a negative voltage source arises.
  • the second JFET A2 is connected as a current source.
  • its drain D2 is connected to ground M
  • gate G2 and source S2 are connected to one another and connected to a connection of the resistor network R4 to R6, the other connection of which is connected to the minus pole (-) of the voltage source Sp.
  • the ohmic resistor network R4 to R6 consists of a series connection of the ohmic resistors R4, R5, which are bridged by the ohmic resistor R6. If the drain current I D2 now flows through this resistance network, a control voltage U GS is generated at the resistor R5 which is dependent on the latter and the drain current I D2 and by means of which the constant current I const flowing through the first JFET A1 can be set.
  • the gate G1 of the first JFET A1 is connected to the minus pole (-), to which there is also a connection of the resistor R5.
  • Source S1 is at the other terminal of resistor R5.
  • Drain D1 is connected to a terminal P1 to which a circuit arrangement through which the constant current I const is to flow can be connected.
  • a circuit arrangement through which the constant current I const is to flow can be connected.
  • a related source S1 negative voltage U GS at the gate G1 which optimally controls JFET A1.
  • the second JFET A2 thus always measures the current saturation current I DSS , which depends in particular on the production process and the current temperature, and in particular by means of the resistor R5 the first JFET A1 controlling voltage U GS converted. It can be seen that the desired constant current I const is adjustable by changing the resistance R5 in particular.
  • the constant current I const remains essentially unchanged with unchanged resistance values of the resistors R4 to R6, even if the pinch-off voltage U p and the saturation current I DSS change within a wide range, for example -1.4 V ⁇ U p ⁇ -1 V; 6m A ⁇ I DSS ⁇ 8.5 mA.
  • resistor network R4 to R6 can therefore be calculated as a function of the desired constant current I const .
  • the resistors R4 to R6 can therefore be manufactured, for example, in an integrated form without subsequent adjustment.
  • Such large tolerance ranges occur particularly in GaAs technology, especially in high and / or Maximum frequency circuits, for example so-called millimeter wave circuits.
  • the circuit arrangement described can be produced in MESFET technology for GaAs technology, so that integration in monolithic and / or hybrid-integrated high-frequency components is advantageously possible.
  • a level converter circuit can be produced, which is described in more detail in German patent application P (internal file number: UL 93 / 39b) filed on the same day.
  • the invention is not limited to the exemplary embodiment described, but can be applied analogously to others.
  • the resistors R4, R5 can be designed as a potentiometer, the center tap of which is connected to the source S1 of the first JFET A1. In this way, the constant current I const can be set continuously within predefinable limits.

Abstract

The invention relates to a constant-current source which contains two JFETs and a simple resistance network. In this arrangement, the current saturation current is measured by a JFET and converted by the resistance network into a control voltage for the other JFET which generates the desired constant current. Such a circuit can be used for compensating within a wide range for production tolerances, particularly those of the JFETs and for temperature fluctuations due to operation. <IMAGE>

Description

Die Erfindung geht aus von einer Konstantstromquelle nach dem Oberbegriff des Patentanspruchs 1.The invention is based on a constant current source according to the preamble of patent claim 1.

Für viele Schaltungsanordnungen, insbesondere in der Elektronik, wird eine Konstantstromquelle benötigt. Diese besitzt einen sehr hohen Innenwiderstand, der theoretisch unendlich sein sollte. Eine Realisierung einer solchen Konstantstromquelle ist mit Hilfe von Halbleiterbauelementen möglich, z.B. als sogenannte Stromspiegel-Schaltung, die z.B. aus Meinke, Gundlach: Taschenbuch der Hochfrequenztechnik, 4. Auflage (1986), S. M22-M23, bekannt ist.A constant current source is required for many circuit arrangements, particularly in electronics. This has a very high internal resistance, which should theoretically be infinite. Such a constant current source can be implemented with the aid of semiconductor components, e.g. as a so-called current mirror circuit, which e.g. from Meinke, Gundlach: Taschenbuch der Hochfrequenztechnik, 4th edition (1986), pp. M22-M23, is known.

Der Erfindung liegt die Aufgabe zugrunde, eine gattungsgemäße Konstantstromquelle anzugeben, die mit Hilfe von mindestens einem Feldeffekt-Transistor in integrierter Technologie herstellbar ist.The invention has for its object a generic Specify constant current source that can be produced with the help of at least one field effect transistor in integrated technology.

Diese Aufgabe wird gelöst durch die im kennzeichnenden Teil des Patentanspruchs 1 angegebenen Merkmale. Vorteilhafte Ausgestaltungen und/oder Weiterbildungen sind den Unteransprüchen entnehmbar.This object is achieved by the features specified in the characterizing part of patent claim 1. Advantageous refinements and / or further developments can be found in the subclaims.

Ein erster Vorteil der Erfindung besteht darin, daß in technisch einfacher und kostengünstiger Weise ein vorgebbarer Konstantstrom einstellbar ist.A first advantage of the invention is that a predeterminable constant current can be set in a technically simple and inexpensive manner.

Ein zweiter Vorteil besteht darin, daß der eingestellte Konstantstrom in weiten Grenzen nahezu unabhängig ist von dem Herstellungsprozess der Feldeffekt-Transistoren und damit deren elektrischen Eigenschaften.A second advantage is that the constant current set is almost independent of the manufacturing process of the field effect transistors and thus their electrical properties.

Ein dritter Vorteil besteht darin, daß der eingestellte Konstantstrom in weiten Grenzen nahezu unabhängig ist von temperaturabhängigen elektrischen Eigenschaften der Feldeffekt-Transistoren.A third advantage is that the constant current that is set is largely independent of the temperature-dependent electrical properties of the field-effect transistors.

Ein vierter Vorteil besteht darin, daß nur ein einziger Typ von Feldeffekttransistor notwendig ist.A fourth advantage is that only a single type of field effect transistor is required.

Ein fünfter Vorteil besteht darin, daß zusätzlich zu den zwei Feldeffekt-Transistoren lediglich ohmsche Widerstände benötigt werden, welche in kostengünstiger Weise in integrierter Technologie herstellbar sind.A fifth advantage is that, in addition to the two field-effect transistors, only ohmic resistors are required, which can be produced inexpensively using integrated technology.

Ein sechster Vorteil besteht darin, daß die nachfolgend beschriebene Schaltungsanordnung in zuverlässiger und kostengünstiger Weise in mit GaAs-Technologie hergestellte integrierte Schaltungen z.B. Hochfrequenzschaltungen, integrierbar ist.A sixth advantage is that the circuitry described below is reliable and inexpensive in integrated circuits made with GaAs technology e.g. High-frequency circuits that can be integrated.

Weitere Vorteile ergeben sich aus der nachfolgenden Beschreibung.Further advantages result from the description below.

Die Erfindung wird im folgenden anhand eines Ausführungsbeispieles unter Bezugnahme auf eine schematisch dargestellte Figur näher erläutert.The invention is explained in more detail below using an exemplary embodiment with reference to a schematically illustrated figure.

Im folgenden wird das Wort Feldeffekt-Transistor durch FET abgekürzt. Diese Abkürzung ist einem Fachmann geläufig.In the following, the word field effect transistor is abbreviated by FET. This abbreviation is familiar to a person skilled in the art.

Das im folgenden erläuterte Beispiel beruht auf der Verwendung zweier n-Kanal-JFETs. Einem Fachmann ist es jedoch geläufig, eine entsprechende Schaltung mit Hilfe von p-Kanal-JFETs aufzubauen, so daß die Erfindung auch diese umfaßt.The example explained below is based on the use of two n-channel JFETs. However, a person skilled in the art is familiar with the construction of a corresponding circuit using p-channel JFETs, so that the invention also encompasses these.

Die Figur zeigt zwei n-Kanal-JFETs A1, A2, die auf einem Halbleitersubstrat in demselben Herstellungsvorgang erzeugt sind. Beide JFETs A1, A2 besitzen im wesentlichen dieselbe Abschnürspannung Up sowie im wesentlichen denselben Sättigungsstrom IDSS. Letzterer ist wesentlich größer gewählt als der einzustellende Konstantstrom Ikonst, z.B. I DSS > 5·I konst

Figure imgb0001
. Bei der Spannungsquelle, z.B. einer 7-Volt-Spannungsquelle, ist der eine Pol (+) mit der (Schaltungs-)Masse M verbunden, so daß eine negative Spannungsquelle entsteht. Zwischen den Polen -,M ist eine Reihenschaltung aus dem Widerstandsnetzwerk R4 bis R6 und einem zweiten JFET A2 angeordnet, wobei der JFET A2 so beschaltet ist, daß durch ihn der Sättigungsstrom ID2 = IDSS fließt. Dieser Drainstrom ID2 = IDSS ist lediglich abhängig von den Eigenschaften des zweiten JFET's A2, z.B. dessen momentaner Temperatur. Um diese Abhängigkeit ausnutzen zu können, ist der zweite JFET A2 als Stromquelle geschaltet. Dazu ist dessen Drain D2 an Masse M gelegt, Gate G2 und Source S2 sind miteinander verbunden und an einen Anschluß des Widerstandsnetzwerkes R4 bis R6 gelegt, dessen anderer Anschluß an dem Minus-Pol (-) der Spannungsquelle Sp liegt. Das ohmsche Widerstandsnetzwerk R4 bis R6 besteht aus einer Reihenschaltung der ohmschen Widerstände R4, R5, die durch den ohmschen Widerstand R6 überbrückt sind. Fließt nun durch dieses Widerstandsnetzwerk der Drainstrom ID2, so entsteht an dem Widerstand R5 eine von diesem und dem Drainstrom ID2 abhängige Steuerspannung UGS, über welche der durch den ersten JFET A1 fließende Konstantstrom Ikonst einstellbar ist. Dazu ist bei dem ersten JFET A1 dessen Gate G1 mit dem Minus-Pol (-) verbunden, an dem auch ein Anschluß des Widerstandes R5 liegt. Source S1 liegt an dem anderen Anschluß des Widerstandes R5. Drain D1 ist mit einem Anschluß P1 verbunden, an den eine Schaltungsanordnung, durch welche der Konstantstrom Ikonst fließen soll, anschließbar ist. An dem ersten JFET A1 entsteht daher am Gate G1 eine bezügliche Source S1 negative Spannung UGS, welche JFET A1 optimal steuert.The figure shows two n-channel JFETs A1, A2, which are produced on a semiconductor substrate in the same manufacturing process. Both JFETs A1, A2 have essentially the same pinch-off voltage U p and essentially the same saturation current I DSS . The latter is chosen to be substantially larger than the constant current I const to be set , for example I. DSS > 5 · I const
Figure imgb0001
 . In the case of the voltage source, for example a 7 volt voltage source, one pole (+) is connected to the (circuit) ground M, so that a negative voltage source arises. Between the poles -, M is a series connection arranged from the resistor network R4 to R6 and a second JFET A2, the JFET A2 being connected such that the saturation current I D2 = I DSS flows through it. This drain current I D2 = I DSS is only dependent on the properties of the second JFET's A2, for example its current temperature. In order to be able to take advantage of this dependency, the second JFET A2 is connected as a current source. For this purpose, its drain D2 is connected to ground M, gate G2 and source S2 are connected to one another and connected to a connection of the resistor network R4 to R6, the other connection of which is connected to the minus pole (-) of the voltage source Sp. The ohmic resistor network R4 to R6 consists of a series connection of the ohmic resistors R4, R5, which are bridged by the ohmic resistor R6. If the drain current I D2 now flows through this resistance network, a control voltage U GS is generated at the resistor R5 which is dependent on the latter and the drain current I D2 and by means of which the constant current I const flowing through the first JFET A1 can be set. For this purpose, the gate G1 of the first JFET A1 is connected to the minus pole (-), to which there is also a connection of the resistor R5. Source S1 is at the other terminal of resistor R5. Drain D1 is connected to a terminal P1 to which a circuit arrangement through which the constant current I const is to flow can be connected. At the first JFET A1 there is therefore a related source S1 negative voltage U GS at the gate G1, which optimally controls JFET A1.

Durch den zweiten JFET A2 wird also immer der aktuelle Sättigungsstrom IDSS, der insbesondere von dem Herstellungsvorgang sowie der aktuellen Temperatur abhängt, gemessen und insbesondere durch den Widerstand R5 in eine den ersten JFET A1 steuernde Spannung UGS umgewandelt. Es ist ersichtlich, daß der gewünschte Konstantstrom Ikonst durch eine Änderung insbesondere des Widerstandes R5 einstellbar ist.The second JFET A2 thus always measures the current saturation current I DSS , which depends in particular on the production process and the current temperature, and in particular by means of the resistor R5 the first JFET A1 controlling voltage U GS converted. It can be seen that the desired constant current I const is adjustable by changing the resistance R5 in particular.

Für einen exemplarisch gewählten Konstantstrom Ikonst gelten für die beschriebene Anordnung folgende Werte:For a constant current I const selected as an example, the following values apply to the arrangement described:

Betriebsspannung UB = -7 V;
Abschnürspannung Up der JFETs A1, A2: Up = -1,2 V;
Sättigungsstrom IDSS der JFETs A1, A2: IDSS = 7,3 mA;
mit den ohmschen widerständen R4 = 1300 Ω, R5 = 300 Ω, R6 = 700 Ω ergibt sich eine Steuerspannung UGS = 0,7 V.Operating voltage U B = -7 V;
Pinch-off voltage U p of JFETs A1, A2: U p = -1.2 V;
Saturation current I DSS of JFETs A1, A2: I DSS = 7.3 mA;
with the ohmic resistances R4 = 1300 Ω, R5 = 300 Ω, R6 = 700 Ω, a control voltage U GS = 0.7 V results.

Es ist besonders vorteilhaft, daß der Konstantstrom Ikonst bei unveränderten Widerstandswerten der Widerstände R4 bis R6 im wesentlichen unverändert bleibt, selbst wenn sich die Abschnürspannung Up sowie der Sättigungsstrom IDSS in einem weiten Bereich ändern, z.B. -1,4 V ≦ Up ≦ -1 V; 6m A ≦ IDSS ≦ 8,5 mA.It is particularly advantageous that the constant current I const remains essentially unchanged with unchanged resistance values of the resistors R4 to R6, even if the pinch-off voltage U p and the saturation current I DSS change within a wide range, for example -1.4 V ≦ U p ≦ -1 V; 6m A ≦ I DSS ≦ 8.5 mA.

Derart große Toleranzbereiche von ungefähr ± 20 % können bei der Herstellung der JFETs auftreten und erfordern in vorteilhafter Weise kein nachträgliches Abgleichen der beschriebenen Schaltung. Das Widerstandsnetzwerk R4 bis R6 ist daher in Abhängigkeit von dem gewünschten Konstantstrom Ikonst berechenbar. Die Widerstände R4 bis R6 sind daher z.B. in integrierter Form ohne nachträgliche Abgleichsmöglichkeit herstellbar.Such large tolerance ranges of approximately ± 20% can occur in the manufacture of the JFETs and advantageously do not require subsequent adjustment of the circuit described. The resistor network R4 to R6 can therefore be calculated as a function of the desired constant current I const . The resistors R4 to R6 can therefore be manufactured, for example, in an integrated form without subsequent adjustment.

Derartig große Toleranzbereiche treten insbesondere bei der GaAs-Technologie auf, insbesondere bei Hoch- und/oder Höchstfrequenzschaltungen, z.B. sogenannten Millimeterwellenschaltungen. Die beschriebene Schaltungsanordnung ist in MESFET-Technologie für GaAs-Technologie herstellbar, so daß vorteilhafterweise eine Integration in monolithisch- und/oder hybrid-integriert aufgebaut Höchstfrequenzbauelemente möglich ist. Mit der beschriebenen Anordnung ist beispielsweise eine Pegelwandler-Schaltung herstellbar, die in der am gleichen Tag eingereichten deutschen Patentanmeldung P          (internes Aktenzeichen: UL 93/39b) näher beschrieben ist.Such large tolerance ranges occur particularly in GaAs technology, especially in high and / or Maximum frequency circuits, for example so-called millimeter wave circuits. The circuit arrangement described can be produced in MESFET technology for GaAs technology, so that integration in monolithic and / or hybrid-integrated high-frequency components is advantageously possible. With the arrangement described, for example, a level converter circuit can be produced, which is described in more detail in German patent application P (internal file number: UL 93 / 39b) filed on the same day.

Die Erfindung ist nicht auf das beschriebene Ausführungsbeispiel beschränkt, sondern sinngemäß auf weitere anwendbar. Beispielsweise können die Widerstände R4, R5 als Potentiometer ausgebildet werden, dessen Mittenabgriff mit Source S1 des ersten JFETs A1 verbunden ist. Auf diese Weise ist eine kontinuierliche Einstellung des Konstantstromes Ikonst in vorgebbaren Grenzen möglich.The invention is not limited to the exemplary embodiment described, but can be applied analogously to others. For example, the resistors R4, R5 can be designed as a potentiometer, the center tap of which is connected to the source S1 of the first JFET A1. In this way, the constant current I const can be set continuously within predefinable limits.

Claims (7)

Konstantstromquelle mit einstellbarem Konstantstrom, der mit Hilfe mindestens einem Halbleiterbauelement erzeugt wird, dadurch gekennzeichnet, - daß eine Spannungsteilerschaltung vorhanden ist,
bestehend aus einer Reihenschaltung aus einem als Stromquelle geschaltetem zweiten Feldeffekt-Transistor (A2), mit den Anschlüssen Source (S2), Drain (D2) sowie Gate (G2), wobei Drain (D2) an einen Pol (M) einer Spannungsquelle (Sp) angeschlossen ist, Source (S2) und Gate (G2) verbunden sind, und mindestens einem einstellbarem ohmschen Widerstand (R4 bis R6), dessen ein Anschluß mit Source (S2) und dessen anderer Anschluß mit dem anderen Pol (-) der Spannungsquelle (Sp) verbunden ist, - daß ein erster Feldeffekt-Transistor (A1) vorhanden ist,
dessen Gate (G1) mit dem anderen Pol (-) der Spannungsquelle (Sp) verbunden ist,
dessen Source (S1) an den Widerstand (R4 bis R6) angeschlossen ist derart, daß zwischen Gate (G1) und Source (S1) ein Widerstand (R5) vorhanden ist, der in Abhängigkeit von dem einzustellenden Konstantstrom (Ikonst), der über Drain (D1) fließt, gewählt ist,
dessen Drain (D1) an ein Bauelement anschließbar ist, das für den Konstantstrom (Ikonst) bestimmt ist, - daß bei beiden Sperrschicht-Feldeffekt-Transistoren (A1, A2) sich der Sättigungsstrom (IDSS) proportional zur Abschnürspannung (Up) verhält und - daß beide Feldeffekt-Transistoren (A1, A2) ein gleiches elektrisches Verhalten besitzen. Constant current source with adjustable constant current, which is generated with the aid of at least one semiconductor component, characterized in that that a voltage divider circuit is present,
Consisting of a series connection of a second field effect transistor (A2) connected as a current source, with the connections source (S2), drain (D2) and gate (G2), drain (D2) being connected to a pole (M) of a voltage source (Sp ) is connected, source (S2) and gate (G2) are connected, and at least one adjustable ohmic resistor (R4 to R6), one connection to source (S2) and the other connection to the other pole (-) of the voltage source ( Sp) is connected - that a first field effect transistor (A1) is present,
whose gate (G1) is connected to the other pole (-) of the voltage source (Sp),
whose source (S1) is connected to the resistor (R4 to R6) in such a way that between the gate (G1) and the source (S1) there is a resistor (R5) which, depending on the constant current (I const ) to be set, passes over Drain (D1) flows, is selected,
whose drain (D1) can be connected to a component that is intended for the constant current (I const ), - That in both junction field-effect transistors (A1, A2) the saturation current (I DSS ) is proportional to the pinch-off voltage (U p ) and - That both field effect transistors (A1, A2) have the same electrical behavior. Konstantstromquelle nach Anspruch 1, dadurch gekennzeichnet, daß der einstellbare Widerstand (R4 bis R6) aus einer Reihenschaltung zweier Widerstände (R4, R5) besteht, zu welcher der Widerstand (R6) parallel geschaltet ist.Constant current source according to claim 1, characterized in that the adjustable resistor (R4 to R6) consists of a series connection of two resistors (R4, R5), to which the resistor (R6) is connected in parallel. Konstantstromquelle nach Anspruch 1 oder Anspruch 2, daß beide Feldeffekt-Transistoren (A1, A2) einen Sättigungsstrom (IDSS) besitzen, der wesentlich größer als der einzustellende maximale Konstantstrom (Ikonst) ist.Constant current source according to claim 1 or claim 2, that both field effect transistors (A1, A2) have a saturation current (I DSS ) which is substantially greater than the maximum constant current (I const ) to be set. Konstantstromquelle nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Feldeffekttransistoren (A1, A2) als integrierte Transistoren ausgebildet sind.Constant current source according to one of the preceding claims, characterized in that the field effect transistors (A1, A2) are designed as integrated transistors. Konstantstromquelle nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Feldeffekt-Transistoren als Sperrschicht-Feldeffekt-Transistoren ausgeführt sind.Constant current source according to one of the preceding claims, characterized in that the field effect transistors are designed as a junction field effect transistors. Konstantstromquelle nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß zumindest die Sperrschicht-Feldeffekt-Transistoren (A1, A2) mittels GaAs-Technologie hergestellt sind.Constant current source according to one of the preceding claims, characterized in that at least the junction field-effect transistors (A1, A2) are manufactured by means of GaAs technology. Konstantstromquelle nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß zumindest die Sperrschicht-Feldeffekt-Transistoren (A1, A2) mittels der MESFET-Technologie hergestellt sind.Constant current source according to one of the preceding claims, characterized in that at least the junction field-effect transistors (A1, A2) are manufactured by means of the MESFET technology.
EP94115731A 1993-10-20 1994-10-06 Constant-current source Expired - Lifetime EP0650112B1 (en)

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DE4335683 1993-10-20
DE4335683A DE4335683A1 (en) 1993-10-20 1993-10-20 Constant current source

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EP0650112A2 true EP0650112A2 (en) 1995-04-26
EP0650112A3 EP0650112A3 (en) 1995-08-30
EP0650112B1 EP0650112B1 (en) 1998-08-05

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Also Published As

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EP0650112A3 (en) 1995-08-30
ES2121595T3 (en) 1998-12-01
EP0650112B1 (en) 1998-08-05
DE59406607D1 (en) 1998-09-10
DE4335683A1 (en) 1995-04-27
US5488328A (en) 1996-01-30

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