EP0517023A1 - Isothermische Kapazitätstransientspektroskopie - Google Patents

Isothermische Kapazitätstransientspektroskopie Download PDF

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Publication number
EP0517023A1
EP0517023A1 EP92108362A EP92108362A EP0517023A1 EP 0517023 A1 EP0517023 A1 EP 0517023A1 EP 92108362 A EP92108362 A EP 92108362A EP 92108362 A EP92108362 A EP 92108362A EP 0517023 A1 EP0517023 A1 EP 0517023A1
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EP
European Patent Office
Prior art keywords
expression
capacitance
semiconductor sample
icts
impurities
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EP92108362A
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English (en)
French (fr)
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EP0517023B1 (de
Inventor
Issei Yokoyama
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Horiba Ltd
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Horiba Ltd
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Publication date
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/221—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance by investigating the dielectric properties

Definitions

  • the present invention relates to a method of nondestructively measuring impurities, defects and the like in semiconductor wafers, semiconductor chips and the like in a short time.
  • ICTS isothermal capacitance transient spectroscopy
  • reference numeral 1 designates a transient capacitance meter provided with a pulse generator 2, a body of transient capacitance meter 3 and an AD convertor 4 therewithin.
  • Reference numeral 5 designates a constant temperature bath provided with a semiconductor sample 6 and a pair of probes 7, 8 connected with said transient capacitance meter 1 therewithin, said probes 7, 8 being provided with contact needles 9, 10 at pointed ends thereof, respectively.
  • Reference numeral 11 designates a computer
  • reference numeral 12 designates a plotter
  • reference numeral 13 designates a display.
  • the respective pointed ends of said contact needles 9, 10 are brought into contact with a portion to be measured of the semiconductor sample 6 with an interval therebetween under the condition that the semiconductor sample 6 is held at an appointed constant temperature, as shown in Fig. 2, to temporarily apply the semiconductor sample 6 with an appointed magnitude of pulse voltage generated by said pulse generator 2.
  • a signal based on an electrostatic capacitance in said portion to be measured of the semiconductor sample 6 is put into said body of transient capacitance meter 3 to be subjected to the AD conversion followed by being operated in said computer 11, whereby measuring said impurities, defects and the like contained in the portion to be measured of the semiconductor sample 6.
  • the ICTS spectrum S(t) has been defined as follows: That is to say, in the case where the capacitance transient waveform as shown in Fig. 5(A) is expressed by C(t), S(t) is expressed by the following expression ( ): In this case, C2(t), which is the square of said C(t), is expressed by the following expression (6): wherein C O designates a stationary capacitance and N D designates a concentration of impurities intendedly added.
  • a concentration of impurities N T and a thermal emission time constant ⁇ are calculated by the following expression (7) from a peak intensity S P of ICTS spectrum and a peak time t P .
  • the present invention has been achieved paying attention to the above described matters and it is an object of the present invention to provide an isothermal capacitance transient spectroscopy method capable of surely detecting impurities of low concentration and thus achieving a highly accurate measurement.
  • the present invention is adapted as follows: That is to say, in an isothermal capacitance transient spectroscopy, in which a pulse voltage having an appointed magnitude is applied to a semiconductor sample held at a constant temperature to analyze a capacitance-change after that of said semiconductor sample, whereby measuring impurities and the like contained in the semiconductor sample, a differential coefficient obtained by differentiating an expression defined by the following expression (8) is used as the ICTS spectrum: And, a differential coefficient obtained by differentiating an expression defined by the following expression (9) may be used as the ICTS spectrum in place of said differential coefficient obtained by differentiating said expression defined by the expression (8): In addition, a differential coefficient obtained by differentiating an expression defined by the following expression (10) may be used as the ICTS spectrum in place of the differential coefficient obtained by differentiating the expression defined by the expression (8): In addition, a differential coefficient obtained by differentiating an expression defined by the following expression (11) may be used as the ICTS spectrum in place of the differential coefficient obtained
  • an expression defined by the following expression (12) is used.
  • a capacitance transient waveform C(t) is as shown in Fig. 3(A)
  • K(t) obtained according to said expression 12 that is an integrated capacitance transient waveform
  • Fig. 3(B) said integrated capacitance transient waveform K(t) is improved in S/N.
  • this K(t) is differentiated to use the obtained differential coefficient as the ICTS spectrum.
  • This ICTS spectrum has a waveform as shown in Fig. 3(C) and this ICTS spectrum is improved in S/N 10 times or more as compared with the above described conventional method. Accordingly, an accuracy of measurement of concentration of impurities and thermal emission time constant can be improved and thus impurities of low concentration 1/10 times or less as compared with that in the conventional method can be detected.
  • the present invention is not limited by the above described first preferred embodiment, that is a differential coefficient obtained by differentiating an expression defined by the following expression 15 may be used as the ICTS spectrum.
  • a concentration of impurities N T and a thermal emission time constant ⁇ in this second preferred embodiment are expressed by the following expression (16):
  • an expression approximate as compared with that in the above described first preferred embodiment is used, so that an accuracy is slightly inferior but the expression is comparatively simple and thus an advantage occurs in that the calculation can be conducted also by an analog circuit.
  • the capacitance transient waveform C(t) includes an invariable fraction C n , as shown in Fig. 4, the following expression 17 may be used as K(t) in the above described first and second preferred embodiments. That is to say, a differential coefficient obtained by differentiating an expression defined by said expression 17 may be used as the ICTS spectrum.
  • a concentration of impurities N T and a thermal emission time constant ⁇ in this third preferred embodiment are expressed by the following expression (18):
  • an effective number of figures in an operation by the computer is increased, so that there is the possibility that an accuracy of calculation is improved.
  • a differential coefficient obtained by differentiating an expression defined by the following expression (19) may be used as the ICTS spectrum.
  • a concentration of impurities N T and a thermal emission time constant ⁇ in this fourth preferred embodiment are expressed by the following expression (20):
  • an expression approximate as compared with that in the above described third preferred embodiment is used, so that an accuracy is slightly inferior but the expression is comparatively simple, so that the calculation can be conducted also by an an analog circuit and at the same time an effective number of figures in an operation by the computer is increased, so that there is the possibility that an accuracy of calculation is improved.
  • the ICTS spectrum is improved in S/N 10 times or more as compared with the conventional method, so that an accuracy of measurement of concentration of impurities and thermal emission time constant can be improved and thus impurities of low concentration 1/10 times or less as compared with that in the conventional method can be detected.
EP92108362A 1991-06-01 1992-05-18 Isothermische Kapazitätstransientspektroskopie Expired - Lifetime EP0517023B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3157569A JP2681767B2 (ja) 1991-06-01 1991-06-01 等温容量過渡分光法
JP157569/91 1991-06-01

Publications (2)

Publication Number Publication Date
EP0517023A1 true EP0517023A1 (de) 1992-12-09
EP0517023B1 EP0517023B1 (de) 1997-11-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP92108362A Expired - Lifetime EP0517023B1 (de) 1991-06-01 1992-05-18 Isothermische Kapazitätstransientspektroskopie

Country Status (5)

Country Link
US (1) US5206598A (de)
EP (1) EP0517023B1 (de)
JP (1) JP2681767B2 (de)
DE (1) DE69222978D1 (de)
HU (1) HU9201680D0 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5773317A (en) * 1995-12-15 1998-06-30 Vlsi Technology Inc. Test structure and method for determining metal-oxide-silicon field effect transistor fringing capacitance
KR101241755B1 (ko) 2012-07-23 2013-03-15 호서대학교 산학협력단 전기화학등온용량과도분광법
KR101241756B1 (ko) 2012-07-23 2013-03-15 호서대학교 산학협력단 전기화학등온용량과도분광기

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE32457E (en) * 1981-09-30 1987-07-07 Rca Corporation Scanning capacitance microscope
DE3832298A1 (de) * 1987-09-25 1989-04-13 Hitachi Ltd Verfahren zur halbleiteroberflaechenmessung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1083526A (en) * 1965-01-28 1967-09-13 Vyzk Ustav Matemat Stroju Apparatus for measuring the reverse recovery charge of fast semiconductor diodes
US3665307A (en) * 1970-06-05 1972-05-23 Nasa Method and apparatus for detecting surface ions on silicon diodes and transistors
US4325025A (en) * 1980-05-22 1982-04-13 International Business Machines Corporation Automated channel doping measuring circuit
US4509012A (en) * 1982-12-30 1985-04-02 Lin Shi Tron Method for determining the characteristic behavior of a metal-insulator-semiconductor device in a deep depletion mode
JPS6259852A (ja) * 1985-09-10 1987-03-16 Shimada Phys & Chem Ind Co Ltd 半導体トラツプ濃度測定方法
HU196262B (en) * 1986-03-17 1988-10-28 Mta Mueszaki Fiz Kutato Inteze Method for testing electrically active impuritles in semiconductor materials and structures and measuring arrangement for implementing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE32457E (en) * 1981-09-30 1987-07-07 Rca Corporation Scanning capacitance microscope
DE3832298A1 (de) * 1987-09-25 1989-04-13 Hitachi Ltd Verfahren zur halbleiteroberflaechenmessung

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS vol. 65, no. 16, 16 October 1989, NEW YORK pages 1662 - 1664; C.C. WILLIAMS, J. SLINKMAN, W. P . HOUGH, H.K. WICKRAMASINGHE: 'lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy' *
JOURNAL OF APPLIED PHYSICS vol. 68, no. 12, 15 December 1990, NEW YORK pages 6526 - 6528; K. NG, I.-W. CHAO, C.E. HUNT, AND J.N. CHURCHILL: 'transient spectroscopy of deep levels in thin semiconductor films' *
PATENT ABSTRACTS OF JAPAN vol. 11, no. 253 (P-606)18 August 1987 & JP-A-62 059 852 ( SHIMADA PHYS&CHEM IND CO ) *

Also Published As

Publication number Publication date
HU9201680D0 (en) 1992-08-28
US5206598A (en) 1993-04-27
JPH04355358A (ja) 1992-12-09
DE69222978D1 (de) 1997-12-11
JP2681767B2 (ja) 1997-11-26
EP0517023B1 (de) 1997-11-05

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