JPS56116637A - Detector for semiconductor device - Google Patents
Detector for semiconductor deviceInfo
- Publication number
- JPS56116637A JPS56116637A JP2011580A JP2011580A JPS56116637A JP S56116637 A JPS56116637 A JP S56116637A JP 2011580 A JP2011580 A JP 2011580A JP 2011580 A JP2011580 A JP 2011580A JP S56116637 A JPS56116637 A JP S56116637A
- Authority
- JP
- Japan
- Prior art keywords
- signal
- probe
- circuit
- detecting
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To make the judgement of a tester correspond to that of a probing device as to whether there exists an element or not by a method wherein a probe on a probing card is used to detect whether it has been contacted by an IC and send information concerning the detection to a tester simultaneously with a signal indicating that it has started measuring. CONSTITUTION:When a detecting probe 5 comes in contact with a semiconductor substrate 2, the probe is separated from a detecting probe 4. Therefore, the voltage in a detection circuit 19 rises to synthesize the information as to the rise in voltage and the output of a circuit 21 for generating a signal informing the commencement of measurement, together in an output circuit 20 so that the information is output. Since a detecting probe 6 does not contact a substrate 2 but a detecting probe 7, the voltage in the detecting circuit 19 does not change, allowing no transmission of the output signal. The output signal 20 opens a relay 16 and maintains the detecting signal, while the signal in the circuit 21 for generating a signal informing the commencement of measurement and the signal 20 are transmitted simultaneously. As a result, the counting of the tester can be made conformable with that of the probe, making it possible to obtain a highly reliable substrate tester.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011580A JPS56116637A (en) | 1980-02-20 | 1980-02-20 | Detector for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011580A JPS56116637A (en) | 1980-02-20 | 1980-02-20 | Detector for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56116637A true JPS56116637A (en) | 1981-09-12 |
Family
ID=12018116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011580A Pending JPS56116637A (en) | 1980-02-20 | 1980-02-20 | Detector for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56116637A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58145140A (en) * | 1982-02-23 | 1983-08-29 | Nec Corp | Semiconductor characteristic measuring device |
JPS6310553U (en) * | 1986-07-08 | 1988-01-23 | ||
US4950618A (en) * | 1989-04-14 | 1990-08-21 | Texas Instruments, Incorporated | Masking scheme for silicon dioxide mesa formation |
-
1980
- 1980-02-20 JP JP2011580A patent/JPS56116637A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58145140A (en) * | 1982-02-23 | 1983-08-29 | Nec Corp | Semiconductor characteristic measuring device |
JPS6310553U (en) * | 1986-07-08 | 1988-01-23 | ||
US4950618A (en) * | 1989-04-14 | 1990-08-21 | Texas Instruments, Incorporated | Masking scheme for silicon dioxide mesa formation |
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