JPS5457968A - Electrical testing unit of semiconductor device and its production - Google Patents

Electrical testing unit of semiconductor device and its production

Info

Publication number
JPS5457968A
JPS5457968A JP12545477A JP12545477A JPS5457968A JP S5457968 A JPS5457968 A JP S5457968A JP 12545477 A JP12545477 A JP 12545477A JP 12545477 A JP12545477 A JP 12545477A JP S5457968 A JPS5457968 A JP S5457968A
Authority
JP
Japan
Prior art keywords
film
piercing
testing
product mark
electrical testing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12545477A
Other languages
Japanese (ja)
Other versions
JPS62575B2 (en
Inventor
Masao Hino
Hiroshi Osabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12545477A priority Critical patent/JPS5457968A/en
Publication of JPS5457968A publication Critical patent/JPS5457968A/en
Publication of JPS62575B2 publication Critical patent/JPS62575B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To facilitate the sampling re-testing and the defect analysis of only defective products by piercing a small hole in a part of one frame of the film, where elements are mounted, and detecting the hole optically.
CONSTITUTION: Film 1 is wound up through indifectible product mark detection part 10, electrical testing part which moves vertically to bring contact 6 into contact with film 1, indefectible product mark piercing part 12, and defective element piercing part 13. At a re-testing or defect analysis time, the presence of the indefectible product mark pierced hole is detected by lamp 17 and photodetector 18 during the passing through detection part 10, and it is decided whether the test in measuring part 11 is required or not. Thus, erroneous discrimination can be prevented and only defective elements are subjected to retesting, so that the number of processes can be reduced considerably
COPYRIGHT: (C)1979,JPO&Japio
JP12545477A 1977-10-18 1977-10-18 Electrical testing unit of semiconductor device and its production Granted JPS5457968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12545477A JPS5457968A (en) 1977-10-18 1977-10-18 Electrical testing unit of semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12545477A JPS5457968A (en) 1977-10-18 1977-10-18 Electrical testing unit of semiconductor device and its production

Publications (2)

Publication Number Publication Date
JPS5457968A true JPS5457968A (en) 1979-05-10
JPS62575B2 JPS62575B2 (en) 1987-01-08

Family

ID=14910485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12545477A Granted JPS5457968A (en) 1977-10-18 1977-10-18 Electrical testing unit of semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5457968A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62203476U (en) * 1986-06-16 1987-12-25
JPS63206672A (en) * 1987-02-23 1988-08-25 Nec Corp Handling apparatus of tabic
JPS6475975A (en) * 1987-09-18 1989-03-22 Nec Corp Handling apparatus of ic
JPH02236468A (en) * 1989-03-10 1990-09-19 Nec Corp Electrically selecting method for film carrier semiconductor device
JPH0496344A (en) * 1990-08-13 1992-03-27 Toshiba Corp Film carrier structure
US6440757B1 (en) * 2001-08-29 2002-08-27 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic fabrication die electrical probe apparatus electrical test method providing enhanced microelectronic fabrication die electrical test accuracy and efficiency

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62203476U (en) * 1986-06-16 1987-12-25
JPS63206672A (en) * 1987-02-23 1988-08-25 Nec Corp Handling apparatus of tabic
JPS6475975A (en) * 1987-09-18 1989-03-22 Nec Corp Handling apparatus of ic
JPH02236468A (en) * 1989-03-10 1990-09-19 Nec Corp Electrically selecting method for film carrier semiconductor device
JPH0496344A (en) * 1990-08-13 1992-03-27 Toshiba Corp Film carrier structure
US6440757B1 (en) * 2001-08-29 2002-08-27 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic fabrication die electrical probe apparatus electrical test method providing enhanced microelectronic fabrication die electrical test accuracy and efficiency

Also Published As

Publication number Publication date
JPS62575B2 (en) 1987-01-08

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