EP0500920B1 - Kaltkathode feldemissionsanordnung mit stromquelle - Google Patents

Kaltkathode feldemissionsanordnung mit stromquelle Download PDF

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Publication number
EP0500920B1
EP0500920B1 EP91918578A EP91918578A EP0500920B1 EP 0500920 B1 EP0500920 B1 EP 0500920B1 EP 91918578 A EP91918578 A EP 91918578A EP 91918578 A EP91918578 A EP 91918578A EP 0500920 B1 EP0500920 B1 EP 0500920B1
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EP
European Patent Office
Prior art keywords
feds
emitter
extraction potential
coupled
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP91918578A
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English (en)
French (fr)
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EP0500920A4 (en
EP0500920A1 (de
Inventor
Norman W. Parker
Robert C. Kane
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Motorola Solutions Inc
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Motorola Inc
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Publication of EP0500920A4 publication Critical patent/EP0500920A4/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Definitions

  • This invention relates generally to cold-cathode field emission devices and more specifically to methods and devices used to control electron emission from cold-cathode field emission devices, such as those incorporating a cathode luminescent display.
  • FEDs Cold-cathode field emission devices
  • a common problem with FEDs is that emitter electron emission is not accurately controllable, due at least in part to FED fabrication inconsistencies.
  • Electronic devices that are comprised of arrays of large numbers of FEDs can yield a minority of heavily conducting field emission devices and a majority of non-conducting field emission devices.
  • various method have been employed as attempts to realize FEDs with accurately controlled electron emission.
  • US-A-4,884,010 (and FR-A-2,604,823) relate to the structure and use of FEDs.
  • an electron emission controlled, cold-cathode field emission device comprising: a FED having at least an emitter, a gate and an anode; the circuit characterized by: current source means, for supplying a determinate source of electrons, operably coupled to the emitter electrode of the cold-cathode field emission device having a maximum output voltage insufficient to induce electron emission from the emitter electrode without an extraction potential applied to said gate; and an extraction potential source coupled to the gate electrode, the extraction potential source being selected to cause emitter electron emission when the current source means is coupled to the emitter.
  • current source means for supplying a determinate source of electrons, operably coupled to the emitter electrode of the cold-cathode field emission device having a maximum output voltage insufficient to induce electron emission from the emitter electrode without an extraction potential applied to said gate
  • an extraction potential source coupled to the gate electrode, the extraction potential source being selected to cause emitter electron emission when the current source means is coupled to the emitter.
  • the circuit may comprise a plurality of FEDs and at least one current source means, with the FEDs arranged in a substantially symmetrical two-dimensional array, such as in rows and columns.
  • the two-dimensional array may comprise a plurality of first and second, substantially co-planar, conductor stripes, the first conductor stripes substantially orthogonal to the second conductor stripes.
  • a first set of first conductor stripes may be selectively independently coupled to at least some of the emitter electrodes of the plurality of FEDs and a first set of second conductor stripes being selectively independently coupled to at least some of the gate electrodes of the plurality of FEDs.
  • a determinate source of electrons may be supplied from a plurality of current source means, which may be selectively independently coupled to at least some of the first set of first stripes
  • a single voltage source may be selectively independently sequentially coupled to each conductor stripe of the first set of second conductor stripes, with the voltage source being capable of applying an extraction potential voltage to the second conductor stripe.
  • each voltage source of the plurality of voltage sources may be selectively independently coupled to a single one of said second conductor stripes.
  • a current source can be considered to include any determinate source of electrons. Some exemplary current sources are briefly described herein.
  • Fig. 1 comprises a schematic diagram of a preferred embodiment of an FED with an emitter current source and gate voltage source in accordance with the present invention.
  • Fig. 2 comprises a top view of an array of clustered FEDs in accordance with a preferred embodiment of the present invention.
  • Figs. 3 and 4 are schematic depictions of current sources suitable for implementation with the present invention.
  • an FED circuit (100) for controlling FED electron emission includes an FED having an emitter electrode (102), a gate electrode (103) and an anode(104).
  • the emitter electrode (102) is coupled to a current source (101) that controls electron emission from the emitter electrode (102).
  • an appropriate extraction potential (105) may be applied to the gate electrode to induce electron emission.
  • the electrons supplied by the current source will be emitted from the emitter when the gate emitter potential is sufficient to induce emitter electron emission.
  • an anode (104) collects at least some of the electrons emitted from the emitter (102).
  • Other FED circuits might not utilize electron-collecting anodes.
  • Figure 2 depicts a top view of an array (200) of FEDs (203), each FED being similar to the FED shown in Fig. 1.
  • the plurality of FEDs (203) shown in Fig. 2 are symmetrically arranged along columns (C1 - C4) and rows (R A - R D ) with respect to each other.
  • the emitter electrodes (102) of FEDs along a column (C1 for example) are operably coupled to a corresponding column (C1) while the gate electrodes (103) of the FEDs along a row (R A for example) are are operably connected to a corresponding row (R A ).
  • FIG. 2 at each cross-over of a column and row, four FEDs are shown. Alternate embodiments would include a single FED at each cross over as well as any number of FEDs at each cross over.)
  • the columns of interconnected emitter electrodes (102) of the FEDs (203) are formed during fabrication of the FEDs (203) by selectively connecting the emitter electrodes (102) of the corresponding FEDs (203) to column conductor stripes (201).
  • the column conductor stripes (201) may be formed by any of the commonly known methodologies such as, for example: evaporation, sputtering, ion implantation, or diffusion doping, or any other appropriate technique.
  • Rows of interconnected FEDs (203) are formed by selectively connecting the gate electrodes (103) of the corresponding FEDs (203) to row conductor stripes (202).
  • the row conductor stripes (202) may be formed using any of the appropriate techniques as previously described for column conductor stripes (201).
  • the electronic device (200), depicted in Fig. 2, forms a matrix of FEDs addressed by row conductor stripes (202) and column conductor stripes (201), both of which may be selectively and independently energized to induce electron emission from one or more selected FEDs (203).
  • row conductor stripes (202) and column conductor stripes (201) both of which may be selectively and independently energized to induce electron emission from one or more selected FEDs (203).
  • Fig. 2 depicts a plurality of FEDs (203) that can be selectively energized by any combination of a row conductor stripe (202) and column conductor stripe (201)
  • alternative embodiments could provide for independently selecting a single FED (203) in an array of FEDs (203).
  • Electron emission in the FEDs shown in Fig. 2 is effected by coupling each column conductor stripe (201) to a current source (204). (Each column conductor stripe is connected to the emitter electrodes of its associated FEDs (203).)
  • the current source (204) provides a source of electrons that can be emitted by the emitter electrodes (102) of the FEDs (203), if an appropriate extraction potential is applied to at least one of the row conductor stripes (202). In the absence of an appropriate extraction potential (105) on any row conductor stripe (202), the output voltage of the current source (204) will increase, eventually reaching a pre-determined limit value. This open circuit voltage of the current source (204) should not be large enough to induce electron emission from the emitter (102) without the applied extraction potential (105).
  • the output voltage of the current source (204) will assume a level necessary to induce electron emission, at the emitter electrodes of the FEDs (203), corresponding to the current level delivered by the current source (204).
  • Alternative embodiments might provide for electron emission to be induced independent of gate extraction potential; wherein the voltage level of the current source is not restricted to the pre-determined level as described above.
  • Such alternative embodiments may provide that the gate electrode be operated at zero volts, or at a negative potential (less than zero), in which instance the operating voltage of the current source will be shifted correspondingly more negative so as to develop the prescribed gate to emitter potential differential required to establish the electric field necessary to effect electron emission.
  • each column conductor stripe (201) of a plurality of column conductor stripes (201) is connected to a single current source (204).
  • Individual FEDs or, as depicted in Fig. 2 a plurality of FEDs (203) comprising a group of FEDs (203) or corresponding to a row conductor stripe (202) and a column conductor stripe (201) may be selected to emit an electron current prescribed by a current source (204).
  • a plurality of columnarly independent FEDs (203) or groups of FEDs (203) can be simultaneously selected to emit an electron current prescribed by a plurality of current sources (204a -204d) that are each coupled to one of the plurality of columns by applying an appropriate extraction potential to a selected row conductor stripe (202a -202d).
  • a selected row of FEDs will emit an electron current with the emission level of each FED or group of FEDs (203) being modulated by the current source (204) connected to the column conductor stripe (201) associated with the FEDs (203) of the selected row and columns.
  • Multi-row addressing of FEDs may be implemented by sequentially applying a single voltage source to each of the plurality of row conductor stripes or by selectively energizing each of a plurality of voltage sources coupled to each of the plurality fo row conductor stripes. If, while sequentially addressing each of the plurality of rows, the electron current to each of the plurality of columns is modulated, the resulting electron emission will be suitable for energizing an anode configured as a luminescent viewing screen.
  • the resultant device is a cathodoluminescent display.
  • Figures 3 and 4 schematically depict possible embodiments of current sources that might be appropriate for implementing the current sources used in Figs. 1 & 2.
  • the current sources depicted are merely examples of some commonly known in the art and should not be considered as inclusive.
  • Reference symbols in Figures 3, and 4 show current direction, rather than electron flow.
  • a current source (300) is shown that is comprised of a reference transistor (302), an output transistor (301), and a reference resistive circuit element (303), all of which are interconnected to provide a prescribed output transistor (301) collector current, I E .
  • the magnitude of the open circuit output voltage is established by the power supply for the current source (300).
  • Figure 4 depicts a current source (400) comprised of an operational amplifier (401), an output transistor (402), and a resistive circuit element (403), all of which are inter-coupled to provide a prescribed output transistor (402) drain current, 1 E .

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Claims (8)

  1. Elektronenemissions-gesteuerte Kaltkathoden-Feldemissionsgerat-(FED-)Schaltung, welche umfaßt:
    A) ein FED (100) mit mindestens einem Emitter (102), einem Gate (103) und einer Anode (104);
    wobei die Schaltung gekennzeichnet ist durch:
    B) Stromquellenmittel (101) zum Anlegen einer bestimmten festgesetzten Quelle von Elektronen, die mit der Emitterelektrode (102) des Kaltkathoden-Feldemissionsgerates betreibbar gekoppelt ist, mit einer maximalen Ausgangsspannung, die nicht ausreicht, Elektronenemission von der Emitterelektrode ohne ein an das Gate angelegtes Extrahierpotential zu induzieren; und
    C) eine Extrahier-Potentialquelle (105), die mit der Gate-Elektrode (103) gekoppelt ist, wobei die Extrahierpotential-Quelle (105) so gewählt ist, daß sie Emitter-Elektronenemission verursacht, wenn das Stromquellenmittel (101) mit dem Emitter gekoppelt ist.
  2. Schaltung nach Anspruch 1, welche Schaltung umfaßt: eine Vielzahl von FEDs (203); und
    mindestens ein Stromquellenmittel (204A-204D) zum Anlegen der festgelegten Quelle von Elektronen, die betreibbar mit mindestens einigen Emitterelektroden der Vielzahl von FEDs gekoppelt ist;
    wobei die Extrahierpotential-Quelle (105) mit mindestens einigen Gate-Elektroden der Vielzahl von FEDs gekoppelt ist und die Ausgangsspannung des Spannungsquellenmittels so ausgewählt ist, daß Emitter-Elektronenemission von mindestens einigen FEDs verursacht wird, wenn das mindestens eine Stromquellenmittel Elektronen zuliefert.
  3. Schaltung nach Anspruch 1, bei der die Schaltung umfaßt: eine Vielzahl von FEDs (203), die in einer im wesentlichen symmetrischen zweidimensionalen Anordnung (200) angeordnet sind, wobei jedes FED mindestens eine Emitter-Elektrode, eine Gate-Elektrode und eine Anoden-Elektrode enthält; eine Vielzahl von ersten (201) und zweiten (202) im wesentlichen koplanaren Leiterstreifen, von denen die ersten Leiterstreifen (201) im wesentlichen senkrecht zu den zweiten Leiterstreifen (202) verlaufen, wobei ein erster Satz von ersten Leiterstreifen wahlweise unabhängig mit mindestens einigen Emitterelektroden der Vielzahl von FEDs gekoppelt ist, ein erster Satz von zweiten Leiterstreifen wahlweise unabhängig mit mindestens einigen Gate-Elektroden der Vielzahl von FEDs gekoppelt ist;
    eine Vielzahl von Stromquellenmitteln (204A-204D) zum Anlegen der festgelegten Quelle von Elektronen, die wahlweise unabhängig mit mindestens einigen ersten Streifen des ersten Satzes gekoppelt ist, wobei die Stromquellen maximale Ausgangsspannungen besitzen, die nicht ausreichen, Elektronenemission von der Emitterelektrode eines FED in Abwesenheit einer an die Gate-Elektrode des FED angelegten Extrahierpotential-Spannung zu induzieren; und
    eine Vielzahl von Extrahierpotential-Quellen (105), die mit dem ersten Satz zweiter Leiterstreifen gekoppelt ist, wobei jede Extrahierpotential-Quelle ein Extrahierpotential an den ersten Satz zweiter Leiterstreifen anlegt, das ausreicht, Emitter-Elektronenemission zu induzieren, wenn eine Stromquelle Elektronen zuführt.
  4. Schaltung nach Anspruch 3, bei der jede Spannungsquelle (105) der Vielzahl von Extrahierpotential-Quellen wahlweise unabhängig mit einem einzelnen zweiten Leiterstreifen (202) gekoppelt ist.
  5. Schaltung nach Anspruch 3, die eine einzelnen Extrahierpotential-Quelle (105) enthält, die wahlweise unabhängig sequentiell mit jedem Leiterstreifen des ersten Satzes von zweiten Leiterstreifen (202) gekoppelt wird, wobei die Extrahierpotential-Quelle (105) fähig ist, eine Extrahierpotential-Spannung an die zweiten Leiterstreifen (202) anzulegen.
  6. Schaltung nach Anspruch 3, 4 oder 5, bei der die Vielzahl von FEDs (203) in einer symmetrischen Anordnung (200) einer Vielzahl von Zeilen (RA-RD) und eine Vielzahl von Spalten (C₁-C₄) angeordnet ist.
  7. Schaltung nach Anspruch 1, bei der die Schaltung umfaßt: eine Vielzahl von FEDs (203), von denen jedes gebildet ist mit mindestens einer Emitter-Elektrode (102), einer Gate-Elektrode (103) und einer Anoden-Elektrode (104); mit einer Vielzahl von ersten leitenden Streifen (202), die wahlweise unabhängig mit Emitterelektroden mindestens einiger der Vielzahl von FEDs betätigbar gekoppelt sind; mit einer Vielzahl von Stromquellenmitteln (204A-204D) zum Zuführen der festgelegten Quelle von Elektronen, wobei die Stromquellen maximale Ausgangsspannungen haben, die nicht ausreichen, Elektronenemission von den Emitterelektroden eines FED in Abwesenheit eines an die Gate-Elektrode des FED angelegten Extrahierpotentials zu induzieren, und jedes von der Vielzahl von Stromquellenmitteln wahlweise unabhängig mit einem der Vielzahl von ersten leitenden Streifen betreibbar gekoppelt ist;
    mit einer Vielzahl von zweiten leitenden Streifen (202), die wahlweise unabhängig mit den Gate-Elektroden mindestens einiger der Vielzahl von FEDs gekoppelt sind; und
    mit Extrahierpotential-Quellenmitteln zum Anlegen eines Extrahierpotentials, das ausreicht, emittierte Elektronenemission von den Emittern der FEDs zu induzieren, und die wahlweise unabhängig mindestens einem der Vielzahl von leitenden Streifen gekoppelt sind.
  8. Schaltung nach einem der vorangehenden Ansprüche, bei der das Stromquellenmittel (101,204A-204D) eine Leerlaufspannung besitzt, die unzureichend ist, Elektronenemission in Abwesenheit eines an eine Gate-Elektrode eines FED (100) angelegten Extrahierpotential zu induzieren.
EP91918578A 1990-09-13 1991-09-13 Kaltkathode feldemissionsanordnung mit stromquelle Expired - Lifetime EP0500920B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/582,441 US5157309A (en) 1990-09-13 1990-09-13 Cold-cathode field emission device employing a current source means
US582441 1990-09-13
PCT/US1991/006681 WO1992005571A1 (en) 1990-09-13 1991-09-13 Cold-cathode filed emission device employing a current source means

Publications (3)

Publication Number Publication Date
EP0500920A1 EP0500920A1 (de) 1992-09-02
EP0500920A4 EP0500920A4 (en) 1993-01-27
EP0500920B1 true EP0500920B1 (de) 1995-12-06

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EP91918578A Expired - Lifetime EP0500920B1 (de) 1990-09-13 1991-09-13 Kaltkathode feldemissionsanordnung mit stromquelle

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US (1) US5157309A (de)
EP (1) EP0500920B1 (de)
JP (1) JPH05505494A (de)
AT (1) ATE131312T1 (de)
DE (1) DE69115249T2 (de)
DK (1) DK0500920T3 (de)
ES (1) ES2080340T3 (de)
WO (1) WO1992005571A1 (de)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6535187B1 (en) 1998-04-21 2003-03-18 Lawson A. Wood Method for using a spatial light modulator
US5155420A (en) * 1991-08-05 1992-10-13 Smith Robert T Switching circuits employing field emission devices
US5536193A (en) 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5543684A (en) 1992-03-16 1996-08-06 Microelectronics And Computer Technology Corporation Flat panel display based on diamond thin films
US5548185A (en) * 1992-03-16 1996-08-20 Microelectronics And Computer Technology Corporation Triode structure flat panel display employing flat field emission cathode
US6127773A (en) 1992-03-16 2000-10-03 Si Diamond Technology, Inc. Amorphic diamond film flat field emission cathode
US5679043A (en) 1992-03-16 1997-10-21 Microelectronics And Computer Technology Corporation Method of making a field emitter
US5763997A (en) 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
US5449970A (en) 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5675216A (en) 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US5686791A (en) 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5638086A (en) * 1993-02-01 1997-06-10 Micron Display Technology, Inc. Matrix display with peripheral drive signal sources
US5956004A (en) * 1993-05-11 1999-09-21 Micron Technology, Inc. Controlling pixel brightness in a field emission display using circuits for sampling and discharging
US5616991A (en) * 1992-04-07 1997-04-01 Micron Technology, Inc. Flat panel display in which low-voltage row and column address signals control a much higher pixel activation voltage
US5410218A (en) * 1993-06-15 1995-04-25 Micron Display Technology, Inc. Active matrix field emission display having peripheral regulation of tip current
US5581159A (en) * 1992-04-07 1996-12-03 Micron Technology, Inc. Back-to-back diode current regulator for field emission display
EP0596242B1 (de) * 1992-11-02 1998-08-26 Motorola, Inc. Helligkeitsmodulierte Kaltkathodeanzeigevorrichtung
JPH08510588A (ja) * 1993-01-19 1996-11-05 ダニロビッチ カルポフ，レオニド 電界放出素子
US5404081A (en) * 1993-01-22 1995-04-04 Motorola, Inc. Field emission device with switch and current source in the emitter circuit
US5856812A (en) * 1993-05-11 1999-01-05 Micron Display Technology, Inc. Controlling pixel brightness in a field emission display using circuits for sampling and discharging
US5387844A (en) * 1993-06-15 1995-02-07 Micron Display Technology, Inc. Flat panel display drive circuit with switched drive current
JP2755113B2 (ja) * 1993-06-25 1998-05-20 双葉電子工業株式会社 画像表示装置の駆動装置
US5999149A (en) * 1993-10-15 1999-12-07 Micron Technology, Inc. Matrix display with peripheral drive signal sources
JP2861755B2 (ja) * 1993-10-28 1999-02-24 日本電気株式会社 電界放出型陰極装置
CN1134754A (zh) 1993-11-04 1996-10-30 微电子及计算机技术公司 制作平板显示系统和元件的方法
US5477110A (en) * 1994-06-30 1995-12-19 Motorola Method of controlling a field emission device
US5920154A (en) 1994-08-02 1999-07-06 Micron Technology, Inc. Field emission display with video signal on column lines
EP0700065B1 (de) * 1994-08-31 2001-09-19 AT&T Corp. Feldemissionsvorrichtung und Verfahren zur Herstellung
US5528098A (en) * 1994-10-06 1996-06-18 Motorola Redundant conductor electron source
JPH08273560A (ja) * 1995-03-30 1996-10-18 Sony Corp ディスプレイ装置及びディスプレイ装置の駆動方法
US5628659A (en) * 1995-04-24 1997-05-13 Microelectronics And Computer Corporation Method of making a field emission electron source with random micro-tip structures
US6296740B1 (en) 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
JP3311246B2 (ja) 1995-08-23 2002-08-05 キヤノン株式会社 電子発生装置、画像表示装置およびそれらの駆動回路、駆動方法
JP3219185B2 (ja) 1995-08-23 2001-10-15 キヤノン株式会社 電子発生装置、画像表示装置およびそれらの駆動回路、駆動方法
US6118417A (en) * 1995-11-07 2000-09-12 Micron Technology, Inc. Field emission display with binary address line supplying emission current
US5656892A (en) * 1995-11-17 1997-08-12 Micron Display Technology, Inc. Field emission display having emitter control with current sensing feedback
KR970030113A (ko) * 1995-11-30 1997-06-26 엄길용 전계방출 표시기의 셀 구동장치
JP3278375B2 (ja) 1996-03-28 2002-04-30 キヤノン株式会社 電子線発生装置、それを備える画像表示装置、およびそれらの駆動方法
US5633561A (en) * 1996-03-28 1997-05-27 Motorola Conductor array for a flat panel display
US5894293A (en) * 1996-04-24 1999-04-13 Micron Display Technology Inc. Field emission display having pulsed capacitance current control
US5847515A (en) * 1996-11-01 1998-12-08 Micron Technology, Inc. Field emission display having multiple brightness display modes
US5940052A (en) * 1997-01-15 1999-08-17 Micron Technology, Inc. Current monitor for field emission displays
US6097356A (en) * 1997-07-01 2000-08-01 Fan; Nongqiang Methods of improving display uniformity of thin CRT displays by calibrating individual cathode
KR100250422B1 (ko) 1997-07-25 2000-04-01 김영남 전계 방출 표시기의 셀 구동장치
US6060840A (en) * 1999-02-19 2000-05-09 Motorola, Inc. Method and control circuit for controlling an emission current in a field emission display
JP3747142B2 (ja) 1999-02-24 2006-02-22 キヤノン株式会社 画像表示装置
US6762556B2 (en) 2001-02-27 2004-07-13 Winsor Corporation Open chamber photoluminescent lamp
US8324366B2 (en) 2008-04-29 2012-12-04 Alnylam Pharmaceuticals, Inc. Compositions and methods for delivering RNAI using lipoproteins
AU2010221419B2 (en) 2009-03-02 2015-10-01 Alnylam Pharmaceuticals, Inc. Nucleic acid chemical modifications
US9102938B2 (en) 2010-04-01 2015-08-11 Alnylam Pharmaceuticals, Inc. 2′ and 5′ modified monomers and oligonucleotides
WO2011133876A2 (en) 2010-04-22 2011-10-27 Alnylam Pharmaceuticals, Inc. Oligonucleotides comprising acyclic and abasic nucleosides and analogs
WO2011133871A2 (en) 2010-04-22 2011-10-27 Alnylam Pharmaceuticals, Inc. 5'-end derivatives
WO2011133868A2 (en) 2010-04-22 2011-10-27 Alnylam Pharmaceuticals, Inc. Conformationally restricted dinucleotide monomers and oligonucleotides
PL3597644T3 (pl) 2011-10-18 2022-01-17 Dicerna Pharmaceuticals, Inc. Aminowe lipidy kationowe i ich zastosowania

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789471A (en) * 1970-02-06 1974-02-05 Stanford Research Inst Field emission cathode structures, devices utilizing such structures, and methods of producing such structures
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
US3812559A (en) * 1970-07-13 1974-05-28 Stanford Research Inst Methods of producing field ionizer and field emission cathode structures
US3704386A (en) * 1971-03-19 1972-11-28 Burroughs Corp Display panel and method of operating said panel to produce different colors of light output
US3894332A (en) * 1972-02-11 1975-07-15 Westinghouse Electric Corp Solid state radiation sensitive field electron emitter and methods of fabrication thereof
JPS5325632B2 (de) * 1973-03-22 1978-07-27
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
JPS5436828B2 (de) * 1974-08-16 1979-11-12
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
US4178531A (en) * 1977-06-15 1979-12-11 Rca Corporation CRT with field-emission cathode
SU855782A1 (ru) * 1977-06-28 1981-08-15 Предприятие П/Я Г-4468 Эмиттер электронов
US4307507A (en) * 1980-09-10 1981-12-29 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing a field-emission cathode structure
US4728851A (en) * 1982-01-08 1988-03-01 Ford Motor Company Field emitter device with gated memory
US4578614A (en) * 1982-07-23 1986-03-25 The United States Of America As Represented By The Secretary Of The Navy Ultra-fast field emitter array vacuum integrated circuit switching device
US4513308A (en) * 1982-09-23 1985-04-23 The United States Of America As Represented By The Secretary Of The Navy p-n Junction controlled field emitter array cathode
FR2568394B1 (fr) * 1984-07-27 1988-02-12 Commissariat Energie Atomique Dispositif de visualisation par cathodoluminescence excitee par emission de champ
JP2788234B2 (ja) * 1986-11-27 1998-08-20 キヤノン株式会社 電子放出装置
GB8621600D0 (en) * 1986-09-08 1987-03-18 Gen Electric Co Plc Vacuum devices
FR2604823B1 (fr) * 1986-10-02 1995-04-07 Etude Surfaces Lab Dispositif emetteur d'electrons et son application notamment a la realisation d'ecrans plats de television
US4685996A (en) * 1986-10-14 1987-08-11 Busta Heinz H Method of making micromachined refractory metal field emitters
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
US4904895A (en) * 1987-05-06 1990-02-27 Canon Kabushiki Kaisha Electron emission device
JP2654012B2 (ja) * 1987-05-06 1997-09-17 キヤノン株式会社 電子放出素子およびその製造方法
GB2204991B (en) * 1987-05-18 1991-10-02 Gen Electric Plc Vacuum electronic devices
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US4901028A (en) * 1988-03-22 1990-02-13 The United States Of America As Represented By The Secretary Of The Navy Field emitter array integrated distributed amplifiers
US4874981A (en) * 1988-05-10 1989-10-17 Sri International Automatically focusing field emission electrode
US4990766A (en) * 1989-05-22 1991-02-05 Murasa International Solid state electron amplifier

Also Published As

Publication number Publication date
JPH05505494A (ja) 1993-08-12
ES2080340T3 (es) 1996-02-01
EP0500920A4 (en) 1993-01-27
EP0500920A1 (de) 1992-09-02
DK0500920T3 (da) 1996-01-08
DE69115249T2 (de) 1996-06-20
WO1992005571A1 (en) 1992-04-02
US5157309A (en) 1992-10-20
ATE131312T1 (de) 1995-12-15
DE69115249D1 (de) 1996-01-18

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