EP0476657A1 - Thermistance à coefficient de termpérature négatif fabriquée par la technologie multicouche - Google Patents

Thermistance à coefficient de termpérature négatif fabriquée par la technologie multicouche Download PDF

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Publication number
EP0476657A1
EP0476657A1 EP91115954A EP91115954A EP0476657A1 EP 0476657 A1 EP0476657 A1 EP 0476657A1 EP 91115954 A EP91115954 A EP 91115954A EP 91115954 A EP91115954 A EP 91115954A EP 0476657 A1 EP0476657 A1 EP 0476657A1
Authority
EP
European Patent Office
Prior art keywords
thermistor
metal
layers
ceramic
temperature coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP91115954A
Other languages
German (de)
English (en)
Inventor
Georg Mag. Rer. Nat. Fritsch
Hans-Georg Dr. Dipl.-Ing. Schuster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics GmbH and Co oG
TDK Electronics AG
Siemens AG
Original Assignee
Siemens Matsushita Components OHG
Siemens AG
Siemens Matsushita Components GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Matsushita Components OHG, Siemens AG, Siemens Matsushita Components GmbH and Co KG filed Critical Siemens Matsushita Components OHG
Publication of EP0476657A1 publication Critical patent/EP0476657A1/fr
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1413—Terminals or electrodes formed on resistive elements having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49085—Thermally variable

Definitions

  • the invention relates to a thermistor with a negative temperature coefficient in multilayer technology.
  • VS multilayer
  • the transfer of a first variant of the VS technology to varistors is known, for example, from EP-PS 0 189 087.
  • the varistor is made up of thin layers of varistor material with noble metal electrodes in between, each of which is led out on one end face and connected to one another by a metallization (soldering surface).
  • the precious metal electrodes which have a relatively high melting point, are applied to the thin ceramic layers by means of screen printing before the sintering process.
  • the transfer of the VS technology to temperature-dependent thermistors has so far not been described for thermistors with a negative temperature coefficient (NTC, thermistor) but only for PTC elements (PTC thermistors) and only as part of a second variant of the known VS technology (US Pat. No. 4,766 409).
  • the ceramic body is alternately made up of porous and dense ceramic layers, metal alloys being pressed into the cavities of the porous intermediate layers, the melting temperatures of which are considerably lower than the sintering temperature of the ceramic body.
  • the inner electrodes are therefore only produced after the sintering process by pressing in and subsequent solidification of the liquid metal, the penetration of the liquid metal, the wetting of the ceramic material and the prevention of reflowing out causing a number of problems, for example in DE-OS 37 25 455 are described.
  • the US-PS 4 766 409 initially assumes that the VS technology is particularly suitable for the implementation of a PTC thermistor with a resistance of only about 0.3 to 3 ohms due to the parallel connection of many thin ceramic layers within a single component .
  • the patent describes attempts to manufacture such a PTC thermistor, in which, similar to the most widespread VS ceramic capacitors, a high-melting metallic paste is applied to the ceramic layers prior to sintering.
  • the metals with high melting point in question gold, platinum, palladium, silver-palladium alloy
  • barrier layers appeared.
  • the US patent declares the high-melting metals mentioned as unsuitable for internal electrodes of PTC thermistors due to the test results.
  • the US patent indicates in the following that barrier-free electrodes made of indium-gallium alloy, as well as of nickel or aluminum are known, but suggests as its own solution, after sintering into porous intermediate layers made of ceramic, internal electrodes made of lead, tin or one Press alloy of the two metals.
  • Such internal electrodes are indeed free of a barrier layer, but the metals used are poorly wetting, which is why additional safety measures must be taken to prevent the injected liquid metals from running out, which make the known PTC thermistor even more complex.
  • the present invention has for its object to provide a thermistor with a negative temperature coefficient in multi-layer technology, which on the one hand a good connection, d. H. ensures a connection with a low electrical contact resistance between the internal electrodes and the ceramic surface and which, on the other hand, is of simplified construction and is easier to produce.
  • the wired or unwired NTC thermistor chips according to the invention are mechanically resilient, have small dimensions (for example 3.2 x 1.6 mm with 1.3 mm thickness) and have electrical resistances from 0.1 ohm to 1 mega ohms (at 25 C).
  • electrical resistances can at best be achieved just below 500 ohms, otherwise the ceramic bodies would become too thin and mechanically sensitive.
  • the press technology is also complex and expensive.
  • the NTC thermistors according to the invention have the general advantage that their resistance, owing to the parallel connection realized by the special VS construction, goes beyond the construction of ceramic layers without internal electrodes, which is also possible and is particularly suitable for the higher-resistance range from approx. 3 kQ - largely independent of their external dimensions.
  • NTC thermistors with any number of internal electrodes made of combinations or mixtures or alloys of the metals: Ag, Al, Au, Co, Cr, Cu, Fe, In, Ir, Mo, Ni, Pb, Pd , Pt, Sn, Ta, Ti, V, W, Zn, Zr can be produced, the special NTC ceramic composition is not essential.
  • An NTC thermistor according to the invention is produced by producing a slip in a manner known per se from the starting material with the aid of organic binding materials, solvents and plasticizers. This is then pulled out to a very thin film using the stripping technique.
  • a pattern of the approximately 2-3 ⁇ m thick inner metal deposits made of a silver-palladium compound with 70-80% by weight of silver is applied to pieces of approximately postcard sizes by means of the screen printing technique known per se, after which a corresponding number of such Postcard-sized foils are stacked on top of one another in such a way that the alternating displacement of the metal coverings results in the finished body.
  • the Schichtthermistor is separated in crude form and sintered after passing through the conventional tempering and binding design bake cycle at temperatures up to 1150 0 C by a pressing operation from the film stack.
  • the NTC thermistors produced in this way are less expensive compared to the known VS thermistors produced by lead injection, porous intermediate layers and special metallizations.
  • the sintered NTC thermistors can then be provided with a solderable metallization by dipping, printing, sputtering, vapor deposition or by electrodeposition, which can also consist of the above-mentioned metals. Finally, it is also possible to coat the surfaces of the thermistors with lacquers, epoxy resins or glass flows.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
EP91115954A 1990-09-21 1991-09-19 Thermistance à coefficient de termpérature négatif fabriquée par la technologie multicouche Ceased EP0476657A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4029988 1990-09-21
DE4029988 1990-09-21

Publications (1)

Publication Number Publication Date
EP0476657A1 true EP0476657A1 (fr) 1992-03-25

Family

ID=6414728

Family Applications (1)

Application Number Title Priority Date Filing Date
EP91115954A Ceased EP0476657A1 (fr) 1990-09-21 1991-09-19 Thermistance à coefficient de termpérature négatif fabriquée par la technologie multicouche

Country Status (3)

Country Link
US (1) US5500996A (fr)
EP (1) EP0476657A1 (fr)
CA (1) CA2051824A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0827160A1 (fr) * 1996-08-30 1998-03-04 SIEMENS MATSUSHITA COMPONENTS GmbH & CO. KG Composant électro-céramique multicouche et procédé de fabrication

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6023403A (en) 1996-05-03 2000-02-08 Littlefuse, Inc. Surface mountable electrical device comprising a PTC and fusible element
KR100331513B1 (ko) * 1996-09-20 2002-04-06 모리시타 요이찌 Ｐｔｃ 서미스터 및 그 제조 방법
JPH1154301A (ja) * 1997-08-07 1999-02-26 Murata Mfg Co Ltd チップ型サーミスタ
US6282072B1 (en) 1998-02-24 2001-08-28 Littelfuse, Inc. Electrical devices having a polymer PTC array
US20020125982A1 (en) * 1998-07-28 2002-09-12 Robert Swensen Surface mount electrical device with multiple ptc elements
US6582647B1 (en) 1998-10-01 2003-06-24 Littelfuse, Inc. Method for heat treating PTC devices
US6347175B1 (en) 1999-07-14 2002-02-12 Corning Incorporated Solderable thin film
WO2001082314A1 (fr) * 2000-04-25 2001-11-01 Epcos Ag Composant electrique, son procede de fabrication et son utilisation
US6279811B1 (en) * 2000-05-12 2001-08-28 Mcgraw-Edison Company Solder application technique
US6628498B2 (en) 2000-08-28 2003-09-30 Steven J. Whitney Integrated electrostatic discharge and overcurrent device
US6498561B2 (en) * 2001-01-26 2002-12-24 Cornerstone Sensors, Inc. Thermistor and method of manufacture
EP1386334A1 (fr) * 2001-05-08 2004-02-04 Epcos Ag Composant ceramique multicouche et son procede de production
US6759940B2 (en) * 2002-01-10 2004-07-06 Lamina Ceramics, Inc. Temperature compensating device with integral sheet thermistors
EP1846740B1 (fr) * 2005-02-10 2010-09-08 Ist Ag Conducteurs de connexion de capteur a conduction thermique reduite
US20090027821A1 (en) * 2007-07-26 2009-01-29 Littelfuse, Inc. Integrated thermistor and metallic element device and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB545679A (en) * 1939-06-23 1942-06-08 Standard Telephones Cables Ltd Resistance composition and method of making it
GB1337929A (en) * 1972-05-04 1973-11-21 Standard Telephones Cables Ltd Thermistors
US4912450A (en) * 1986-09-20 1990-03-27 Murata Manufacturing Co., Ltd. Thermistor and method of producing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2886476A (en) * 1956-10-19 1959-05-12 Du Pont Resistors
US4189760A (en) * 1973-05-13 1980-02-19 Erie Technological Products, Inc. Monolithic capacitor with non-noble metal electrodes and method of making the same
US4454495A (en) * 1982-08-31 1984-06-12 The United States Of America As Represented By The United States Department Of Energy Layered ultra-thin coherent structures used as electrical resistors having low temperature coefficient of resistivity
DE3660342D1 (en) * 1985-01-17 1988-07-28 Siemens Ag Voltage-dependent electric resistance (varistor)
US4766409A (en) * 1985-11-25 1988-08-23 Murata Manufacturing Co., Ltd. Thermistor having a positive temperature coefficient of resistance
US4918421A (en) * 1986-03-20 1990-04-17 Lawless William N Nonlinear resistor for low temperature operation
DE3725455A1 (de) * 1987-07-31 1989-02-09 Siemens Ag Elektrisches vielschichtbauelement mit einem gesinterten, monolithischen keramikkoerper und verfahren zur herstellung des elektrischen vielschichtbauelementes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB545679A (en) * 1939-06-23 1942-06-08 Standard Telephones Cables Ltd Resistance composition and method of making it
GB1337929A (en) * 1972-05-04 1973-11-21 Standard Telephones Cables Ltd Thermistors
US4912450A (en) * 1986-09-20 1990-03-27 Murata Manufacturing Co., Ltd. Thermistor and method of producing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 13, no. 571 (E-862)(3919) 18. Dezember 1989 & JP-A-1 239 813 ( MATSUSHITA ELECTRIC IND CO LTD ) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0827160A1 (fr) * 1996-08-30 1998-03-04 SIEMENS MATSUSHITA COMPONENTS GmbH & CO. KG Composant électro-céramique multicouche et procédé de fabrication

Also Published As

Publication number Publication date
US5500996A (en) 1996-03-26
CA2051824A1 (fr) 1992-03-22

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