EP0460701B1 - Verfahren zur Herstellung eines korrosionsbeständigen Schutzüberzugs auf Aluminiumsubstrat - Google Patents

Verfahren zur Herstellung eines korrosionsbeständigen Schutzüberzugs auf Aluminiumsubstrat Download PDF

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Publication number
EP0460701B1
EP0460701B1 EP19910109363 EP91109363A EP0460701B1 EP 0460701 B1 EP0460701 B1 EP 0460701B1 EP 19910109363 EP19910109363 EP 19910109363 EP 91109363 A EP91109363 A EP 91109363A EP 0460701 B1 EP0460701 B1 EP 0460701B1
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Prior art keywords
aluminum
corrosion
protective coating
aluminum substrate
fluorine
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Expired - Lifetime
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EP19910109363
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English (en)
French (fr)
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EP0460701A1 (de
Inventor
D'arcy H. Lorimer
Craig A. Bercaw
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US07/534,807 external-priority patent/US5069938A/en
Priority claimed from US07/534,796 external-priority patent/US5192610A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/34—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in more than one step
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing

Definitions

  • This invention relates to a method for forming a corrosion-resistant protective coating formed on an aluminum substrate.
  • the chamber walls of processing apparatus used in the production of integrated circuit structures on semiconductor wafers such as, for example, chemical vapor deposition (CVD) chambers and/or etching chambers, e.g. reactive ion etching chambers, are subject to attack by the chemicals used in such deposition and etching processes.
  • CVD chemical vapor deposition
  • etching chambers e.g. reactive ion etching chambers
  • the substitution of an ordinary stainless steel material for aluminum in the construction of an etching or deposition chamber may result in a cost increase of about four times the cost of aluminum, while the use of a highly polished and air oxidized stainless steel may be as much as four times the cost of ordinary stainless steel; i.e., the substitution of such highly polished and specially processed stainless steels for conventional anodized aluminum can result in an increase of costs of over fifteen times what the cost would be to use aluminum.
  • Document US-A-4 111 762 teaches a method for producing an anodized aluminum body having a roughened surface which exhibits certain optical qualities.
  • the document teaches the use of vacuum drying and hydrogen fluoride to dry and waterproof the surface of the body, but does not teach a method for coating an aluminum body in such a way as to resist the corrosion effect of process halogen gases and plasmas found in a processing apparatus such as is used to process semiconductor materials.
  • the invention provides a high purity protective coating formed on an aluminum substrate by contacting a high purity aluminum oxide coating with one or more fluorine-containing gases to form a coated aluminum substrate capable for use in processing apparatus used to form integrated circuit structures on semiconductor wafers.
  • Figure 1 is a fragmentary cross-sectional view of an aluminum substrate having a corrosion-resistant protective coating formed on the surface of the substrate.
  • Figure 2 is a fragmentary vertical cross-sectional view of an aluminum vacuum chamber for processing semiconductor wafers having a high purity protective coating formed on the inner aluminum surfaces of the chamber.
  • Figure 3 is a flow sheet illustrating the process of the invention.
  • the invention in its broadest aspects, comprises an aluminum surface, such as surface 12 on aluminum substrate 10 shown in Figure 1, having formed thereon a corrosion-resistant protective coating 20 capable of withstanding corrosion attack by process halogen gases and plasmas.
  • the protective coating is formed on the aluminum substrate by first forming an aluminum oxide layer on the aluminum substrate and then contacting the aluminum oxide layer with one or more fluorine-containing gases to form the protective coating thereon.
  • the invention comprises an aluminum chamber used in the processing of semiconductor wafers, such as aluminum reactor chamber 30 shown in Figure 2, having its inner surfaces 32 protected by a high purity corrosion-resistant protective coating 40 formed thereon capable of withstanding corrosion attack by the aforesaid process halogen gases and plasmas.
  • the high purity protective coating is formed on the aluminum substrate by first forming a high purity aluminum oxide layer on the aluminum substrate and then contacting the high purity aluminum oxide layer with one or more high purity fluorine-containing gases to form the high purity protective coating of the invention thereon.
  • high purity aluminum oxide is meant to define an aluminum oxide having a purity of at least 97 wt.%, preferably greater than 99 wt.%, and in particular having less than 3 wt.%, preferably less than 1 wt.%, of impurities such as, for example, sulfur, boron, and phosphorus and any other elements, including, in general, any other metals and metalloids (including silicon), which could interact with processing materials used in the formation of integrated circuit structures on semiconductor wafers to introduce undesirable impurities.
  • impurities such as, for example, sulfur, boron, and phosphorus and any other elements, including, in general, any other metals and metalloids (including silicon), which could interact with processing materials used in the formation of integrated circuit structures on semiconductor wafers to introduce undesirable impurities.
  • the aluminum substrate on which such a high purity aluminum oxide is to be formed should have a purity of at least about 99 wt.%, and preferably a purity of about 99.9 wt.%.
  • aluminum oxide is intended to include both fully dehydrated aluminum oxide, i.e., Al 2 O 3 (alpha alumina), as well as hydrated forms of aluminum oxide, e.g., Al(OH) 3 (bayerite) or AlO(OH) (boehmite).
  • high purity protective coating is meant to define a high purity aluminum oxide, as defined above, which has been contacted with one or more fluorine-containing gases to form a coating which contains less than about 3 wt.%, and preferably less than about 1 wt.%, of elements other than aluminum, oxygen, hydrogen, and fluorine.
  • concentrated halogen acid with respect to the concentrated aqueous halogen acids used to evaluate the corrosion resistance of the protective coating of the invention is meant a 35 wt.% or higher concentration of HCl or a 48 wt.% or higher concentration of HF.
  • the corrosion-resistant protective coating of the invention it is necessary to contact an aluminum oxide film previously formed on the aluminum substrate with one or more fluorine-containing gases.
  • the aluminum oxide film to be contacted by the one or more fluorine-containing gases should have a thickness of from at least about 0.1 micrometers (1000 Angstroms) up to about 20 micrometers (microns) prior to the contacting step. Thicker oxide films or layers can be used, but are not necessary to form the corrosion-resistant protective coating of the invention.
  • the one or more fluorine-containing gases which will be used to contact the previously formed aluminum oxide layer on the aluminum substrate will comprise acid vapors or gases such as gaseous HE or F 2 , with or without inert carrier gases such as, for example, argon, or neon; or other carrier gases such as hydrogen, oxygen, air, or water vapor, e.g., steam.
  • acid vapors or gases such as gaseous HE or F 2
  • inert carrier gases such as, for example, argon, or neon
  • other carrier gases such as hydrogen, oxygen, air, or water vapor, e.g., steam.
  • fluorine-containing gases include NF 3 , CF 4 , CHF 3 , and C 2 F 6 .
  • the reagents used in this step must also be of a sufficient purity so as to not introduce any impurities into the high purity aluminum oxide previously formed on the aluminum substrate. If the fluorine-containing gases, and other gaseous reagents used in this step have a purity of less than about 100 ppm impurities, i.e., have a purity of at least about 99.99 wt.% (usually at least semiconductor grade), the desired high purity of the protective coating, when such high purity is desired, will be preserved.
  • the contacting step is preferably carried out in an enclosed reaction chamber, particularly when the high purity protective coating is being formed.
  • the reaction area is well ventilated, it is within the scope of the invention to contact the aluminum oxide-coated aluminum substrate with one or more fluorine-containing gases in an open area, particularly when the purity of the resultant protective coating is not an issue.
  • the aluminum reactor may already be preassembled in which case the oxidized aluminum substrates to be contacted may comprise the inner walls of the aluminum reactor.
  • the aluminum reactor will then additionally serve as the containment vessel for the contacting step as well as providing a high purity environment for the contacting step.
  • the one or more fluorine-containing gases may be introduced into the vessel and maintained therein at a concentration ranging from 5 to 100 volume %, depending upon the source of fluorine-containing gas, and a pressure ranging from about 1.3 mbar (1 Torr) to atmospheric pressure.
  • the contacting step may be carried out for a time period within a range of from about 30 minutes to about 120 minutes at a temperature which may range from about 375°C to about 500°C, and preferably from about 450°C to about 475°C.
  • the amount of contact time needed to ensure formation of the protective coating of the invention will vary with the temperature and the concentration of the fluorine-containing gas. Longer periods of time than that specified, however, should not be used if reducing gases (such as H 2 ) are present in the fluorine-containing gas to avoid damage to the underlying oxide layer.
  • the coated aluminum substrate may be flushed with water or other non-reactive gases or liquids to remove any traces of the fluorine-containing gases.
  • the contact step is carried out within a closed vessel, wherein the vessel walls comprise oxidized aluminum which has been contacted with the one or more fluorine-containing gases, for example, when forming the high purity protective coating, the reactor vessel may be flushed with non-reactive gases to remove the fluorine-containing gases from the reactor.
  • the resulting protective coating on the aluminum substrate may then be examined by a number of analytical techniques such as, for example, Auger analysis, SIMS, ESCA LIMS, and EDX and will be found to have a fluorine concentration ranging from 3 to 18 wt.%, based on total weight of the coating.
  • analytical techniques such as, for example, Auger analysis, SIMS, ESCA LIMS, and EDX and will be found to have a fluorine concentration ranging from 3 to 18 wt.%, based on total weight of the coating.
  • a high purity aluminum oxide film or layer must first be formed on the aluminum substrate.
  • the high purity aluminum oxide layer may be either a thermally formed layer or an anodically formed layer.
  • the reagents used in forming the oxide layer should, preferably, be essentially free of impurities which might otherwise be incorporated into the aluminum oxide layer. Therefore, as previously defined with respect to the high purity aluminum oxide coating itself, the reagents used in forming the aluminum oxide coating should preferably have a purity of at least about 97 wt.%, preferably greater than 99 wt.%.
  • the reagents should preferably have less than 3 wt.%, and more preferably less than 1 wt.%, of impurities such as, for example, sulfur, boron, and phosphorus and any other elements, including, in general, any other metals and metalloids (including silicon), which may be incorporated into the high purity coating and possibly interact with processing materials used in the formation of integrated circuit structures on semiconductor wafers to introduce undesirable impurities.
  • impurities such as, for example, sulfur, boron, and phosphorus and any other elements, including, in general, any other metals and metalloids (including silicon), which may be incorporated into the high purity coating and possibly interact with processing materials used in the formation of integrated circuit structures on semiconductor wafers to introduce undesirable impurities.
  • reagents which contain impurities that are introduced into the coating may be used in the practice of the invention, even when producing high purity coatings in accordance with the preferred embodiment if the impurity is of a type which may be easily removed from the surface of the coating.
  • the impurity is of a type which may be easily removed from the surface of the coating.
  • sulfuric acid is used as the electrolyte in forming an anodized aluminum oxide coating
  • undesirable sulfur in the resultant coating may be removed by thoroughly rinsing the surface with deionized water containing a sufficient amount of nitric acid to adjust the pH to about 5.
  • the nitrate ions apparently exchange with the sulfate ions in the coating and then, due to the solubility of the nitrate ions, are easily removed from the coating as well.
  • the aluminum substrate is contacted for a period of from about 10 to about 200 hours with an oxidizing gas at a partial pressure ranging from about 15 wt.% to about 100 wt.% oxygen, with the balance preferably comprising a 99.99 wt.% pure carrier gas. heated to a temperature within a range of from about 350°C to about 500°C to form an aluminum oxide coating having a minimum thickness of at least about 1000 nm (1000 Angstroms), preferably about 300 nm (3000 Angstroms).
  • the aluminum substrate is made the anode in an electrolytic cell wherein the electrolyte preferably comprises a compound which will not introduce any other elements into the aluminum oxide coating to be formed anodically on the aluminum substrate, as previously discussed.
  • the electrolyte comprises a high purity inorganic acid such as nitric acid or a high purity organic acid such as a monocarboxylic acid, for example, formic acid (HCOOH), acetic acid (CH 3 COOH), propionic acid (C 2 H 5 COOH), butyric acid (C 3 H 7 COOH), valeric acid (C 4 H 9 COOH), palmitic acid (CH 3 (CH 2 ) 14 COOH), and stearic acid (CH 3 (CH 2 ) 16 COOH); or a dicarboxylic acid, for example, oxalic acid (COOH) 2 ), malonic acid (CO 2 H(CH 2 )CO 2 H), succinic acid (CO 2 H(CH 2 ) 2 CO 2 H), glutaric acid (CO 2 H(CH 2 ) 3 CO 2 H), and adipic acid (CO 2 H(CH 2 ) 4 CO 2 H).
  • a monocarboxylic acid for example, formic acid (HCOOH), acetic acid (
  • mineral acids such as sulfuric acid, phosphorus-containing acid, and boronic acid usually should be avoided, when forming a high purity aluminum oxide, because of their tendencies to include in the resulting anodically formed aluminum oxide traces of the respective elements, e.g., sulfur, phosphorus, boron, etc. from the acid electrolyte.
  • mineral acid electrolytes may be used if such impurities can be subsequently removed from the surface of the resulting aluminum oxide coating, as previously discussed.
  • the anodizing bath may be maintained at a temperature ranging from about 0°C up to about 30°C.
  • the anodization should be carried out at a voltage within a range of from at least about 15 to about 45 volts D.C. to ensure formation of the desired minimum thickness of anodically formed aluminum oxide, as is well known to those skilled in the art. While conventional DC voltage is preferred, AC voltage may, in some instances, also be utilized.
  • the anodizing process should be carried out for a time period sufficient to form the desired thickness of aluminum oxide on the aluminum substrate.
  • the progress of the anodic process may be easily monitored by the current flow in the bath. When the current drops below about 111 to 667 A/m 2 (10-60 amperes/square foot) (indicative of the presence of the insulating aluminum oxide film), the voltage may be shut off and the anodized aluminum may be removed from the bath.
  • the high purity aluminum oxide coating may also be formed on the aluminum substrate by a combination of thermal and anodic oxide formation, for example, by first anodically forming an oxide coating layer and then thermally oxidizing the anodically formed oxide coating.
  • the aluminum oxide may be contacted, in accordance with the invention, with one or more fluorine-containing gases, as previously described above, to form the high purity corrosion-resistant protective coating of the invention on the aluminum substrate.
  • the inner walls of an aluminum reactor suitable for use in the processing of semiconductor wafers were initially oxidized to form an aluminum oxide layer thereon by anodizing the aluminum reactor surfaces by immersing them in an electrolyte containing 15 wt.% sulfuric acid, with the balance deionized water.
  • the electrolyte was maintained at a temperature of about 13°C while the aluminum was anodized for about 35 minutes to a final voltage of about 24 volts D.C. and a final current density of 244 A/m 2 (22 amperes/ft. 2 ).
  • the oxide coating may be formed anodically using a 15 wt.% oxalic acid, balance deionized water electrolyte at 13°C for 35 minutes to a final voltage of 40 volts and a final current density of about 333 A/m 2 (30 amperes/ft. 2 ); or the oxide coating may be formed thermally in a reactor filled with O 2 at a pressure maintained between 667 mbar (500 Torr) and atmospheric pressure over a contact period of about 40 hours.
  • a gaseous mixture of 50 vol.% C 2 F 6 and 50 vol.% O 2 was then introduced into the reactor at a pressure of about 13.3 mbar (10 Torr).
  • the gaseous mixture remained in contact with the reactor walls for about 1 hour while the reactor was maintained at a temperature of about 400°C.
  • the reactor was then flushed with argon gas.
  • coated pieces or samples of the coated reactor surfaces were tested with drops of aqueous concentrated (35 wt.%) hydrochloric acid and monitored for the evolution of gas signifying attack or reaction by the acid on the samples. No visible evolution of gas was noted for about 40 minutes.
  • the reactor was then disassembled and the protective coating which had been formed on the inner walls was examined. No visible signs of corrosion attack on the protective surface were noted.
  • the protective coating on the reactor wall was analyzed for impurities by Auger analysis and found to have less than 3 wt.% of elements other than Al, O, H, and F in the coating layer, indicating the high purity of the protective layer.
  • the invention provides a corrosion-resistant protective coating for an aluminum substrate which is capable of protecting the aluminum substrate from corrosive attack by process halogen gases and plasmas.
  • a high purity protective coating may be formed on an aluminum reactor wall suitable for use in the processing of semiconductor wafers in the construction of integrated circuit structures by first forming a high purity aluminum oxide film and then contacting this film with one or more high purity fluorine-containing gases to form a high purity corrosion-resistant protective film which will not introduce impurities into semiconductor wafer processes carried out in a reactor protected by such high purity coatings.

Claims (8)

  1. Verfahren zur Bildung einer korrosionsbeständigen Schutzbeschichtung auf einem Aluminiumsubstrat mit folgenden Schritten:
    (a) Bildung einer Aluminiumoxidschicht auf dem Aluminiumsubstrat, und
    (b) Kontaktieren der Aluminiumoxidschicht mit mindestens einem Gas ausgewählt aus Fluor und einer Fluorverbindung bei einer erhöhten Temperatur von mindestens 375°C,
       wodurch eine Schutzschicht mit 3 bis 18 Gew.% Fluor auf der Aluminiumoberfläche gebildet wird.
  2. Verfahren zur Bildung einer korrosionsbeständigen Schutzbeschichtung auf einem Aluminiumsubstrat gemäß Anspruch 1, bei dem die in Schritt (a) gebildete Aluminiumoxidschicht eine Dicke von mindestens 0,1 µm und vorzugsweise nicht mehr als etwa 20 µm aufweist.
  3. Verfahren zur Bildung einer korrosionsbeständigen Schutzbeschichtung auf einem Aluminiumsubstrat gemäß Anspruch 1 oder 2, bei dem Schritt (b) über einen Zeitraum im Bereich von 30 Minuten bis 120 Minuten und/oder bei einer Temperatur im Bereich von 375°C bis 500°C, bevorzugter 450°C bis 475°C, erfolgt, wobei die fluorhaltigen Gase in Schritt (b) vorzugsweise aus der Klasse bestehend aus HF, F2, NF3, CF4, CHF3 und C2F6 ausgewählt sind.
  4. Verfahren zur Bildung einer korrosionsbeständigen Schutzbeschichtung auf einem Aluminiumsubstrat gemäß einem der vorhergehenden Ansprüche, bei dem Schritt (b) bei einer Konzentration fluorhaltigen Gases von 5 bis 100 Vol% und/oder einem Druck von 1,333 mbar (1 Torr) bis Atmosphärendruck erfolgt.
  5. Verfahren zur Bildung einer korrosionsbeständigen Schutzbeschichtung auf einem Aluminiumsubstrat gemäß einem der vorhergehenden Ansprüche, bei dem das Aluminiumsubstrat eine Reinheit von vorzugsweise mindestens etwa 99 Gew.% aufweist, die Aluminiumoxidschicht anodisch in einem Anodisierungsbad bei einer Temperatur im Bereich von 0°C bis 30°C unter Verwendung einer Anodisierungsspannung von 15 bis 45 Volt Gleichspannung bis zum Fallen des Stroms unter 111 bis 667 A/m2 (10 bis 60 Ampere/Fuß2) gebildet wird.
  6. Verfahren zur Bildung einer korrosionsbeständigen Schutzbeschichtung auf einem Aluminiumsubstrat gemäß einem der Ansprüche 1 bis 4, bei dem das Aluminiumsubstrat eine Reinheit von vorzugsweise mindestens etwa 99 Gew.% aufweist und die Aluminiumoxidschicht durch Kontaktieren des Aluminiumsubstrats über 10 bis 200 Stunden mit einem Oxidationsgas gebildet wird, welches etwa 15 bis 100 Gew.% Sauerstoff enthält, und innerhalb eines Temperaturbereichs von 350°C bis 500°C erwärmt wird.
  7. Verfahren zur Bildung einer korrosionsbeständigen Schutzbeschichtung auf einem Aluminiumsubstrat gemäß einem der vorhergehenden Ansprüche, bei dem die Aluminiumoxidschicht eine hochreine Aluminiumoxidschicht mit einer Reinheit von mindestens 97 Gew.%, vorzugsweise mehr als 99 Gew.% ist, das eine oder die mehreren fluorhaltigen Gase hochreine fluorhaltige Gase mit weniger als 100 ppm Verunreinigungen außer Trägergasen sind und die so gebildete korrosionsbeständige Schutzbeschichtung hochrein ist, d. h. weniger als etwa 3 Gew.%, und vorzugsweise weniger als etwa 1 Gew.%, an Elementen enthält, bei welchen es sich nicht um Aluminium, Sauerstoff, Wasserstoff und Fluor handelt.
  8. Verfahren zur Bildung einer korrosionsbeständigen Schutzbeschichtung auf einem Aluminiumsubstrat gemäß einem der vorhergehenden Ansprüche, wodurch eine Schutzschicht mit 3 bis 18 Gew.% Fluor auf dem Aluminiumsubstrat gebildet wird.
EP19910109363 1990-06-07 1991-06-07 Verfahren zur Herstellung eines korrosionsbeständigen Schutzüberzugs auf Aluminiumsubstrat Expired - Lifetime EP0460701B1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US534796 1990-06-07
US07/534,807 US5069938A (en) 1990-06-07 1990-06-07 Method of forming a corrosion-resistant protective coating on aluminum substrate
US534807 1990-06-07
US07/534,796 US5192610A (en) 1990-06-07 1990-06-07 Corrosion-resistant protective coating on aluminum substrate and method of forming same

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EP0460701A1 EP0460701A1 (de) 1991-12-11
EP0460701B1 true EP0460701B1 (de) 1998-03-04

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EP19910109363 Expired - Lifetime EP0460701B1 (de) 1990-06-07 1991-06-07 Verfahren zur Herstellung eines korrosionsbeständigen Schutzüberzugs auf Aluminiumsubstrat

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KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
DE10028772B4 (de) * 2000-06-07 2005-03-17 Technische Universität Dresden Aluminiumwerkstoff mit ultrahydrophober Oberfläche, Verfahren zu dessen Herstellung sowie Verwendung
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JP2006128370A (ja) 2004-10-28 2006-05-18 Tokyo Electron Ltd 成膜装置、成膜方法、プログラムおよび記録媒体
DE102016102504A1 (de) 2016-02-08 2017-08-10 Salzgitter Flachstahl Gmbh Aluminiumbasierte Beschichtung für Stahlbleche oder Stahlbänder und Verfahren zur Herstellung hierzu
DE102018101183A1 (de) * 2017-10-17 2019-04-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Passives elektrisches Bauteil mit Isolierschicht
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US4111762A (en) * 1975-01-31 1978-09-05 Martin Marietta Corporation Optically black coating and process for forming it

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DE69125651T2 (de) 1997-09-04
EP0460701A1 (de) 1991-12-11
EP0460700B1 (de) 1997-04-16
DE69128982D1 (de) 1998-04-09
DE69128982T2 (de) 1998-08-27
EP0460700A1 (de) 1991-12-11
DE69125651D1 (de) 1997-05-22

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