EP0454584A1 - Verfahren und Vorrichtung zur Dekontaminierung durch Ionenätzen - Google Patents
Verfahren und Vorrichtung zur Dekontaminierung durch Ionenätzen Download PDFInfo
- Publication number
- EP0454584A1 EP0454584A1 EP91401101A EP91401101A EP0454584A1 EP 0454584 A1 EP0454584 A1 EP 0454584A1 EP 91401101 A EP91401101 A EP 91401101A EP 91401101 A EP91401101 A EP 91401101A EP 0454584 A1 EP0454584 A1 EP 0454584A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- enclosure
- substrate
- electrically conductive
- sputtering
- decontaminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21F—PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
- G21F9/00—Treating radioactively contaminated material; Decontamination arrangements therefor
- G21F9/001—Decontamination of contaminated objects, apparatus, clothes, food; Preventing contamination thereof
- G21F9/005—Decontamination of the surface of objects by ablation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
Definitions
- the present invention relates to a decontamination process and device.
- the object of the present invention is to remedy the above drawbacks.
- the invention uses a sputtering technique to decontaminate a polluted object, and a substrate, or collector, to collect the contaminating material.
- the present invention firstly relates to a method of decontaminating an object whose surface is polluted by a material contaminant, process characterized in that at least part of the surface is covered by an enclosure, in that this part taken for target is etched by cathode sputtering, and in that the contaminant material thus removed is collected, on a substrate contained in the enclosure.
- the object can be, at least superficially, electrically conductive.
- the target is brought to a high voltage in absolute, continuous and negative value with respect to the earth.
- the object can, on the contrary, be electrically insulating.
- the substrate is electrically conductive and an alternating electric voltage, of high maximum value and of high frequency (for example from the 'around 10 MHz).
- the substrate acts as an antenna.
- a relative displacement of the substrate is also carried out relative to the object in order to successively strip a plurality of parts of the contaminated surface.
- sputtering is also advantageous because it is possible to deposit, after etching of the surface and over the residual contaminating material, a thin layer of a material, for example chromium, making it possible to ensure containment of this residual contaminating material and therefore biological protection.
- the enclosure can be provided to cover the entire surface to be decontaminated, the surface for decontaminating the substrate being greater than or equal to the surface to be decontaminated.
- the enclosure when the enclosure is made of an electrically conductive material, it is possible to use, as substrate, the enclosure itself or, more precisely, the internal wall of this enclosure. This makes it possible to decontaminate a large number of parts placed in the enclosure, the latter receiving the contaminating material from each of these parts.
- the enclosure can be provided to be placed on the surface to be decontaminated, thus covering part of the latter for the decontamination of this covered part.
- the device which is the subject of the invention may further comprise means for relative displacement of the enclosure and the substrate with respect to the object in order to successively etch a plurality of parts of the contaminated surface.
- the surface to be decontaminated taken as a target, is then grounded, the substrate is given a shape almost identical to that of the enclosure and a continuous and positive high voltage is applied to this substrate.
- the substrate may include a support and an electrically conductive thin film which covers this support.
- the invention makes it possible to capture and fix the contaminating material which has been removed, on a thin film which forms a protective screen from simple shape and reduced surface area, which facilitates the subsequent conditioning of this contaminating material which has been removed, while the known techniques mentioned above do not make it possible to fix the contaminating material removed by these techniques.
- the present invention makes it possible to decontaminate not only flat surfaces but also surfaces which are not completely flat, for example mechanical parts which include weld beads, and even non-flat surfaces, such as profiled parts.
- the substrate can follow the shape of the enclosure and be close to it, that is to say have walls close to the walls of the enclosure, to avoid pollution of the latter during decontamination.
- the device which is the subject of the present invention may further comprise means capable of creating a magnetic field which is perpendicular to the electric field generated in the space between the substrate and the surface to be decontaminated during sputtering and which increases the density. of ions in this space and therefore the speed of spraying.
- the device according to the invention which is schematically shown in Figure 1, is intended to decontaminate a metal part 2 whose surface 4 is flat and has been contaminated with a polluting material 5, for example a radioactive material.
- This device allows sputtering of the surface 4 which, in the example shown, is grounded.
- this device could also be used to decontaminate an electrically insulating object superficially covered by an electrically conductive layer which would have been polluted and it is this conductive layer that is grounded.
- the device schematically represented in FIG. 1 comprises a bell-shaped enclosure 6 which can be made of an electrically insulating material such as for example glass or, on the contrary, of an electrically conductive material such as for example steel or l 'aluminum.
- the enclosure 6 is also earthed (case of FIG. 1).
- the device also includes pumping means 8 which are provided to create a vacuum in the enclosure 6.
- This vacuum can be primary or secondary depending on the precise goal sought (spraying speed, heavy or light pickling products, vapor pressure of these products).
- the pumping means can comprise a vane pump.
- the vane pump can be supplemented by a turbomolecular pump for example.
- the device also includes means 10 provided for introducing into the enclosure 6 a plasma generating gas, for example argon, under low pressure, of the order of 1 Pa for example.
- a plasma generating gas for example argon
- the device also includes an electrically conductive subsrat 12, for example made of steel stainless.
- This substrate 12 which is placed in the enclosure 6, is intended to collect the polluting material and also plays the role of electrode. It substantially follows the shape of the enclosure and its walls are close to the walls of this enclosure: they are spaced a few centimeters, for example 2 to 3 cm for an enclosure whose diameter is of the order of 30 cm.
- the device further comprises means 14 provided for bringing the substrate 12 to a positive positive high voltage.
- the substrate 12 is of course not in contact with the surface 4.
- the enclosure 6 rests against the surface 4 by means of sealing means 16, such as an O-ring for example, which make it possible to maintain the vacuum in the enclosure 6.
- the means 14 are electrically connected to the substrate 12 via an electrical conductor 22 which is fixed to the substrate 6 by means not shown and which passes through the top of the enclosure 6 by a sealed passage 24, this passage also being electrically insulating when the enclosure is electrically conductive.
- the conductor 22 is immobilized in this sealed passage and thus supports the substrate 12.
- the substrate 12 is brought to a high positive potential with respect to the part of the surface 4 which is covered by the enclosure 6 and which here plays the role of target.
- a plasma is created between the substrate and the target.
- This target is bombarded with positive ions from the plasma.
- the device shown in FIG. 1 can be moved by placing it successively above these parts of the surface 4.
- the device when the part 2 is mobile, the device is kept fixed and the part 2 is made to pass in front of this device in order to successively decontaminate the different parts of the surface 4.
- the vacuum is broken in the enclosure 6, the device is moved relative to the part to be decontaminated or this part relative to the device, so as to place this device in the -above the next part and we redo the vacuum in enclosure 6.
- FIG. 2 Another device according to the invention is schematically represented in FIG. 2.
- This other device is intended to decontaminate a metal part 2, the surface of which has been contaminated, for example, with a radioactive material.
- the part rests on a flat surface 30. If the latter is electrically conductive, it is grounded and the part 2 rests on this surface 30 by through an electrically insulating support 31.
- the device of FIG. 2 comprises the enclosure which is earthed and which covers the part 2 to be decontaminated, the pumping means 8 and the means for introducing gas 10.
- the device also comprises the electrically conductive substrate 12 which , in the case of FIG. 2, no longer follows the shape of the enclosure 6 but has a planar shape and a surface greater than that of the part 2.
- the substrate 12 is placed opposite and close to the part 2 and it is suspended from the conductor 22 which, in the device of FIG. 2, is earthed.
- Decontamination also takes place by sputtering, the part 2 being brought to a continuous voltage, high in absolute and negative value, by suitable means 32 which are connected to the part 2 via an electrical conductor 33 which passes through the enclosure 6 through a sealed and electrically insulating passage 34.
- the substrate 12 that can be seen in FIG. 2 can optionally be covered, before starting the decontamination, with an electrically conductive protective film 26, intended to be compacted after having finished the decontamination.
- the substrate 12 is electrically insulating and the part 2 is decontaminated by bringing it to a high voltage in absolute, continuous and negative value relative to the earth.
- means 35 it is possible, for example, to use a set of magnetic bars positioned according to an arrangement suitable for inducing a wear zone forming a closed geometric circuit. So that this wear zone is homogeneous over the entire surface of the part 2, means 36 are provided for animating the means 35 and therefore the magnetic field with an alternating translation movement.
- the means 35 can be used in the case of FIG. 1. These means 35 are then placed behind the part 2 (considering that the enclosure 6 is located in front of this part 2). This assumes that the material constituting the part 2 does not form a magnetic screen.
- the means 35 can be provided with means 36 of alternating translation, in order to have a homogeneous wear zone of the surface to be decontaminated.
- the means 35 In the case where the device of FIG. 1 is moved, the means 35 must also be moved so that they are always below the enclosure 6.
- the device shown diagrammatically in FIG. 1 can also be used with parts whose surface 4 to be decontaminated is not flat but for example curved or "uneven" (case of profiled parts).
- a flexible skirt is then used as the sealing means 16 which borders the lower part of the enclosure 6 and which thus connects this enclosure 6 to the surface 4 to be decontaminated, this skirt allowing the maintenance of a dynamic vacuum (with sufficiently powerful pumping means).
- the enclosure 6, which is electrically conductive, is grounded and acts as a substrate. It covers the part 2 to be decontaminated which still rests on the surface 30 by means of the insulating support 31.
- the part 2 is brought to a direct and negative voltage, high in absolute value, by the biasing means 32, by the intermediate of the conductor 33 which, in the case of FIG. 4, crosses the surface 30 through a sealed and electrically insulating passage 34a.
- the pumping means 8 and the gas supply means 10 communicate with the interior of the enclosure 6 through the surface 30. By sputtering, the contaminating material torn from the surface of the part 2 is deposited on the wall internal speaker 6.
- the part 2a which one wishes to decontaminate is electrically insulating. It also rests on the surface 30 (grounded) via the insulating support 31.
- the enclosure 6 grounded covers the part 2a and rests on the surface 30 by means of the sealing means 16.
- the substrate 12 is identical to that which is used in the device of FIG. 1 and therefore marries the made of enclosure 6.
- Pumping means and means for supplying plasma gas are also provided in the device of FIG. 5.
- the substrate 12 is brought to an alternating voltage of radio frequency type, of the 'order of 10 MHz for example, and high maximum value, of the order of 1000 V for example.
- This voltage is supplied by biasing means 14a and applied to the substrate 12 by the conductor 22 which passes through the passage 24 and which supports the substrate 12.
- the substrate 12 is replaced by a conductive disc 12a which is brought to a negative high direct voltage using means. appropriate 40 which are connected to it via the electrical conductor 22.
- the disc 12a which then plays the role of target during sputtering, is made of the material of which the layer 38 is to be formed, for example chromium.
- This material is then torn from the disk 12a and projected onto the part of the surface 4 which is delimited by the enclosure 6, this part then playing the role of substrate.
- the device can still be moved relative to the part (or the part relative to the device) to successively cover different parts of the surface 4 with a protective layer.
- the disc 12a can be covered by an electrically insulating cover 44 intended to isolate this disc from the enclosure.
- the disk 12a playing the role of target is kept at a distance of the order of 2 to 3 cm from the surface 4 which acts as a substrate. .
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Food Science & Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9005417 | 1990-04-27 | ||
FR9005417A FR2661544B1 (fr) | 1990-04-27 | 1990-04-27 | Procede et dispositif de decontamination par decapage ionique. |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0454584A1 true EP0454584A1 (de) | 1991-10-30 |
EP0454584B1 EP0454584B1 (de) | 1995-08-02 |
Family
ID=9396183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19910401101 Expired - Lifetime EP0454584B1 (de) | 1990-04-27 | 1991-04-25 | Verfahren und Vorrichtung zur Dekontaminierung durch Ionenätzen |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0454584B1 (de) |
JP (1) | JP2892857B2 (de) |
DE (1) | DE69111671T2 (de) |
FR (1) | FR2661544B1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998022231A1 (en) * | 1996-11-18 | 1998-05-28 | Omerco Ltd. | Method and apparatus for the treatment of surfaces of large metal objects |
US20210272715A1 (en) * | 2018-11-21 | 2021-09-02 | Joint Stock Company "Rosenergoatom" | Method for Decontaminating a Structural Element of a Nuclear Reactor |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6052538B2 (ja) * | 2012-12-04 | 2016-12-27 | 清水建設株式会社 | 汚染コンクリート塊の除染処理方法および装置 |
CN112139151A (zh) * | 2020-09-11 | 2020-12-29 | 韩山师范学院 | 一种大型设备表面清理装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1382915A (en) * | 1972-04-25 | 1975-02-05 | British Nuclear Fuels Ltd | Decontamination of fuel element sheaths |
DE3114543A1 (de) * | 1981-04-10 | 1982-12-16 | Alkem Gmbh, 6450 Hanau | Verfahren zum dekontaminieren der oberflaeche eines koerpers von radioaktiven verunreinigungspartikeln und einrichtung zur durchfuehrung dieses verfahrens |
GB2159753A (en) * | 1984-03-06 | 1985-12-11 | Asm Fico Tooling | Method and apparatus for cleaning lead pins and the like before soldering operations |
EP0313154A1 (de) * | 1987-10-21 | 1989-04-26 | N.V. Bekaert S.A. | Verfahren und Vorrichtung zur Reinigung von langgestreckten metallischen Substraten, Substrate gereinigt mit diesem Verfahren, und Gegenstände aus polymerem Material, verstärkt mit diesen Substraten |
-
1990
- 1990-04-27 FR FR9005417A patent/FR2661544B1/fr not_active Expired - Fee Related
-
1991
- 1991-04-25 EP EP19910401101 patent/EP0454584B1/de not_active Expired - Lifetime
- 1991-04-25 DE DE1991611671 patent/DE69111671T2/de not_active Expired - Fee Related
- 1991-04-26 JP JP3095983A patent/JP2892857B2/ja not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1382915A (en) * | 1972-04-25 | 1975-02-05 | British Nuclear Fuels Ltd | Decontamination of fuel element sheaths |
DE3114543A1 (de) * | 1981-04-10 | 1982-12-16 | Alkem Gmbh, 6450 Hanau | Verfahren zum dekontaminieren der oberflaeche eines koerpers von radioaktiven verunreinigungspartikeln und einrichtung zur durchfuehrung dieses verfahrens |
GB2159753A (en) * | 1984-03-06 | 1985-12-11 | Asm Fico Tooling | Method and apparatus for cleaning lead pins and the like before soldering operations |
EP0313154A1 (de) * | 1987-10-21 | 1989-04-26 | N.V. Bekaert S.A. | Verfahren und Vorrichtung zur Reinigung von langgestreckten metallischen Substraten, Substrate gereinigt mit diesem Verfahren, und Gegenstände aus polymerem Material, verstärkt mit diesen Substraten |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998022231A1 (en) * | 1996-11-18 | 1998-05-28 | Omerco Ltd. | Method and apparatus for the treatment of surfaces of large metal objects |
US20210272715A1 (en) * | 2018-11-21 | 2021-09-02 | Joint Stock Company "Rosenergoatom" | Method for Decontaminating a Structural Element of a Nuclear Reactor |
Also Published As
Publication number | Publication date |
---|---|
DE69111671T2 (de) | 1996-04-04 |
DE69111671D1 (de) | 1995-09-07 |
JP2892857B2 (ja) | 1999-05-17 |
JPH04230898A (ja) | 1992-08-19 |
FR2661544B1 (fr) | 1994-05-27 |
FR2661544A1 (fr) | 1991-10-31 |
EP0454584B1 (de) | 1995-08-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0049380A1 (de) | Vorrichtung zur plasmachemischen Beschichtung | |
CA2700575C (fr) | Procede de traitement de surface d'au moins une piece au moyen de sources elementaires de plasma par resonance cyclotronique electronique | |
EP1178134A1 (de) | Pasma-Verfahren und -Vorrichtung zur Durchlaufbehandlung metallischer Gegenstände | |
FR2490399A1 (fr) | Procede et appareil pour la pulverisation ou vaporisation utilisant une source d'ions amelioree | |
EP0200651A1 (de) | Dreielektrodenionenquelle mit einer einzigen Hochfrequenzionisationskammer und mit multipolarer magnetischer Umschliessung | |
EP0818557A1 (de) | Verfahren und Vorrichtung zur Herstellung einer Beschichtung auf einem Substrat | |
EP2208218B1 (de) | Verfahren und vorrichtung zur plasma-behandlung substrate im durchlauf | |
EP0454584B1 (de) | Verfahren und Vorrichtung zur Dekontaminierung durch Ionenätzen | |
EP0908535B1 (de) | Verfahren zum Reinigen eines Substrats und Vorrichtung zur Durchführung des Verfahrens | |
FR2509755A1 (fr) | Appareil et procede de pulverisation cathodique a grande vitesse | |
EP0413617A1 (de) | Verfahren zur Abscheidung von Dünnschichten | |
EP2035597B1 (de) | Reinigungsvorrichtung und reinigungsverfahren für einen plasmareaktor | |
EP0241447B1 (de) | Zerstäubungskathode | |
JP4550959B2 (ja) | 薄膜作成装置 | |
EP3278350A1 (de) | Vorrichtung zur behandlung von gegenständen mit plasma, verwendung dieser vorrichtung und verfahren zur verwendung dieser vorrichtung | |
FR2614041A1 (fr) | Procede et appareil pour le traitement de substrats en faisant intervenir un faisceau d'ions acceleres pour l'erosion de ces substrats, ou pour le depot d'une ou plusieurs couches de revetement | |
FR2689143A1 (fr) | Dispositif de pulvérisation cathodique utilisant un plasma engendré par des micro-ondes. | |
WO2022096819A1 (fr) | Nettoyage d'un élément optique d'un dispositif de fabrication additive | |
EP2654071B1 (de) | Kapazitiv gekoppelter Plasmareaktor für Dünnfilmablagerung | |
CA2628586C (fr) | Procede et installation d'avivage sous vide par pulverisation magnetron d'une bande metallique | |
EP0734048B1 (de) | Verfahren und Vorrichtung zur Beschichtung oder Reinigung eines Substrats | |
EP0908924A1 (de) | Vorrichtung zur Kondensationserzeugung eines Schichtes auf einem Substrat | |
EP0944745A1 (de) | Verfahren und vorrichtung zur herstellung einer beschichtung auf einem substratmittels kathodenzerstäubung | |
CA2628589C (fr) | Procede et installation d'avivage sous vide par pulverisation magnetron d'une bande metallique | |
FR2668171A1 (fr) | Machine de depot par pulverisation cathodique. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): BE CH DE FR GB IT LI NL |
|
17P | Request for examination filed |
Effective date: 19920410 |
|
17Q | First examination report despatched |
Effective date: 19941021 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE PATENT HAS BEEN GRANTED |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): BE CH DE FR GB IT LI NL |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: MAUREL, JEAN-JOSEPH Inventor name: BOSCH, PHILIPPE |
|
REF | Corresponds to: |
Ref document number: 69111671 Country of ref document: DE Date of ref document: 19950907 |
|
ITF | It: translation for a ep patent filed |
Owner name: JACOBACCI & PERANI S.P.A. |
|
GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) |
Effective date: 19951010 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
26N | No opposition filed | ||
REG | Reference to a national code |
Ref country code: FR Ref legal event code: CL |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: CH Payment date: 20000128 Year of fee payment: 10 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: NL Payment date: 20000428 Year of fee payment: 10 Ref country code: BE Payment date: 20000428 Year of fee payment: 10 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20010425 Year of fee payment: 11 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20010430 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20010505 Year of fee payment: 11 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20010524 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20010524 |
|
BERE | Be: lapsed |
Owner name: COMMISSARIAT A L' ENERGIE ATOMIQUE Effective date: 20010430 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20011101 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: IF02 |
|
NLV4 | Nl: lapsed or anulled due to non-payment of the annual fee |
Effective date: 20011101 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20020425 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20020426 Year of fee payment: 12 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20021101 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20020425 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20031231 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED. Effective date: 20050425 |