EP0404545A2 - Substrat mit aktiver Matrix für eine Flüssigkristallanzeigevorrichtung - Google Patents

Substrat mit aktiver Matrix für eine Flüssigkristallanzeigevorrichtung Download PDF

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Publication number
EP0404545A2
EP0404545A2 EP90306737A EP90306737A EP0404545A2 EP 0404545 A2 EP0404545 A2 EP 0404545A2 EP 90306737 A EP90306737 A EP 90306737A EP 90306737 A EP90306737 A EP 90306737A EP 0404545 A2 EP0404545 A2 EP 0404545A2
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EP
European Patent Office
Prior art keywords
diode
electrode
semiconductor layer
active matrix
matrix substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP90306737A
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English (en)
French (fr)
Other versions
EP0404545A3 (de
Inventor
Sugiro C/O Japan Synthetic Rubber Co. Shimoda
Yuiti C/O Japan Synthetic Rubber Co. Haruta
Shingo C/O Japan Synthetic Rubber Co. Matsui
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JSR Corp
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Japan Synthetic Rubber Co Ltd
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Filing date
Publication date
Application filed by Japan Synthetic Rubber Co Ltd filed Critical Japan Synthetic Rubber Co Ltd
Publication of EP0404545A2 publication Critical patent/EP0404545A2/de
Publication of EP0404545A3 publication Critical patent/EP0404545A3/de
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel

Definitions

  • This invention relates to an active matrix sub­strate for liquid crystal display device.
  • the matrix substrate to be used for liquid crystal display devices there have been known those of the active matrix system having a switching device such as a thin film transistor elemental device or diode elemental device provided at each picture element.
  • the active matrix system realizes a large area display panel with an increased number of picture elements without lowering the contrast ratio of the display panel.
  • the active matrix systems using diode elemental devices are manufactured with a higher yield than those using thin film transistor elemental devices, because diode matrixes can be manufactured by a simpler process.
  • active matrix substrate those having hydrogenated amorphous silicon, hydrogenated amor­phous silicon carbide, polysilicon, etc. used for the semiconductor layer have been known.
  • active matrix substrate those having hydrogenated amorphous silicon, hydrogenated amor­phous silicon carbide, polysilicon, etc. used for the semiconductor layer have been known.
  • circuit sys­tem of the active matrix substrate the MIM system, the back to back system, the ring diode system, etc. have been known.
  • the diode switch with the threshold voltage higher than the voltage to drive the liquid crystals are re­quired. Therefore, for driving each picture element, a high voltage corresponding to the sum of the driving volt­age of the liquid crystals and the above-mentioned threshold voltage of the diode switches is required, whereby there is the drawback that the advantage of liquid crystal display device of low power consumption is lost.
  • the ring diode system which utilizes the forward direction characteristics of diode elemental devices, is small in deviation of threshold value voltage of diode elemental devices, but has the drawback that a large num­ber of diode elemental devices are necessary per one pic­ture element because the threshold value voltage of one diode elemental device is as small as 0.6 volts.
  • an object of the present invention is to provide an active matrix substrate which has picture element display characteristics of high precision at low power consumption, and yet can be prepared by a simple process with simple equipment without use of a special device such as vacuum film formation equipment, etc.
  • an active matrix substrate for liquid crystal dis­play device comprising a plurality of scanning electrodes arranged in substantially parallel to each other and a plurality of transparent electrodes for forming picture elements provided on an electrically insulating substrate, said plurality of transparent electrodes being arranged in a matrix to form rows parallel to each other, each row of said transparent electrodes being positioned respectively between the two scanning electrodes (the first and the second scanning electrodes) or adjacent to the scanning electrode pair, wherein an even number of diode elemental devices are formed per said picture element, which even number of diode elemental devices constitute a diode row connected electrically in series and in the same direction, and yet said transparent electrodes for forming picture elements are electrically connected at the intermediate point where the even number of diode elemental devices of the diode row are divided into the same numbers, one end of said diode row is electrically con­nected to the first scanning electrode, and the other end to the second scanning electrode, and said diode elemental device comprises a
  • the switch circuit to the picture elements constituted of diode elemental devices can choose the states of closed circuit (low resistance) and high resistance. Under the closed circuit state, since the forward direction charac­teristics with small threshold value voltage of the diode elemental device is utilized, deviation in switching char­acteristics becomes smaller, whereby the picture elements can be driven at low voltage and high precision as com­pared with the MIM system.
  • the minimum number of the diode elemental devices necessary for one picture element is two, but by providing 4 or 6 diode elemental devices, deviations of the individual diode elemental devices can be compensated, whereby the advantage of uniforming the switching characteristics of the individual picture elements can be also accomplished. Further, most of the defects generated in the diode elemental devices are short circuits, and by providing 4 or 6 diode elemen­ tal devices for each picture element, the probability of the picture elements becoming completely inoperative is reduced to a great extent, whereby the production yield of the substrate is improved.
  • the active matrix substrate can be pro­duced by a simple process without expensive vacuum film forming equipments, and the invention makes it possible to provide inexpensive active matrix liquid crystal display devices with high quality picture.
  • Fig. 1 A
  • a transparent electrode 52 which becomes the picture element is arranged, and said transparent electrode 52 constitutes a row in such posi­tional relationship.
  • diode elemental devices 53 To each of the transparent elec­trodes 52 are connected an even number (2 in the Figure) of diode elemental devices 53, and these diode elemental devices 53 are connected to the first and the second elec­trodes 50, 51. Also, as shown in Fig.
  • a trans­parent electrode 52 adjacent to the scanning electrode pair comprising the first and the second scanning electrodes 50, 51 may be arranged a trans­parent electrode 52, and in such positional relationship said transparent electrode 52 may constitute a row. Also, in this case, an even number of diode elemental devices 53 are connected to each transparent electrode 52, and also connected respectively to the first and the second scan­ning electrodes 50, 51. Although only one transparent electrode 52 is shown in Fig. 1 (A) and (B), it will be readily understood that the transparent electrode 52 is provided in a plural number at the positional relationship shown in the respective Figures to constitute a row.
  • FIG. 2 (A) A plan view per one picture element in a represen­tative example of the active matrix substrate of the pres­ent invention is shown in Fig. 2 (A), and its B-B′ sec­tional view in Fig. 2 (B).
  • scanning elec­trodes 11-1 and 11-2 are provided on the electrically in­ sulating substrate 10, and between these scanning elec­trodes 11-1 and 11-2 is arranged a transparent electrode 14 which becomes the picture element.
  • the first diode elemental device 18 is formed of the scanning electrode 11-1, the semiconductor layer 12 and the electrode layer 15.
  • the semiconductor layer 12 forms a Schottky junction with either one of the scanning electrode 11-1 and the electrode layer 15, and also an ohmic junction with the other of the scanning electrode 11-1 and the electrode layer 15.
  • the insulating layers 13 are provided on both sides of the scanning electrode 11-1 and the semiconductor layer 12 to both sides of the scanning electrode 11-1 and the semiconductor layer 12 .
  • the electrode layer 11-3 is provided as connected to the other side end of the transparent elec­trode 14, and the electrode layer 11-3 is provided with the semiconductor layer 12, the electrode layer 15 and the insulating layer 13 similarly as described above.
  • the second diode elemental device 19 is formed of the electrode layer 11-3, the semiconductor layer 12 and the electrode layer 15.
  • the electrode layer 15 is connected to the scanning electrode 11-2.
  • the semiconductor layer 12 forms a Schottky junction with either one of the electrode layer 11-3 and the electrode layer 15, and also an ohmic junction with the other of the electrode layer 11-3 and the electrode layer 15.
  • the first and the second diode elemental devices are connected electrically in series through the transparent electrode 15 which becomes the picture ele­ment.
  • the I-V characteristics of the diode elemental devices of the active matrix substrate exhibit the rec­tifying characteristics as shown in Fig.3.
  • Fig. 2 is an ex­ample of having two diode elemental devices provided per one picture element, but in the present invention, an even number of 4, 6 or more may be provided per one picture element.
  • an even number of 4, 6 or more may be provided per one picture element.
  • insulating materials such as glass, epoxy resin, polyester, polyurethane, polyimide, etc. can be included.
  • the diode elemental device to be used in the ac­tive matrix substrate of the present invention is con­stituted of a first electrode layer, a semiconductor layer formed on said first electrode layer and a second elec­trode layer formed on said semiconductor layer.
  • Said semiconductor layer comprises a metal oxide semiconductor or a metal chalcogenide semiconductor.
  • the first electrode layer corresponds to the scanning electrode 11-­1, and the second electrode layer to the electrode layer 15.
  • the first electrode layer corresponds to the electrode layer 11-3, and the second electrode layer to the electrode layer 15.
  • metal oxide semiconductor to be used in the semiconductor layer constituting the above diode elemental device for example, zinc oxide, cuprous oxide, etc. can be included.
  • metal chalcogenide semiconductor for example, cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), etc. can be included.
  • the thickness of these semiconductor layers may be generally 0.01 to 10 ⁇ m, preferably 0.1 to 10 ⁇ m. If the semiconductor layer is too thin, defects are liable to be formed, while if it is too thick, the resistance of the diode elemental device becomes too great.
  • the first and the second electrode layers provided on the above diode elemental device are films comprising an conductive material, including metal films of, e.g., chromium, titanium, aluminium, nickel, copper, silver, gold, tungsten, etc., carbon film and transparent conduc­tive films such as ITO (indium tin oxide), indium oxide, tin oxide, tin oxide-antimony, etc.
  • conductive material including metal films of, e.g., chromium, titanium, aluminium, nickel, copper, silver, gold, tungsten, etc., carbon film and transparent conduc­tive films such as ITO (indium tin oxide), indium oxide, tin oxide, tin oxide-antimony, etc.
  • the first and the second electrode layers can be obtained by, for example, forming a metal film of chromium, aluminium, nickel, silver, gold, copper, etc. by such method such as sputtering, vapor deposition, electro­less plating, etc. and forming the film into a pattern shape, and also can be formed by coating a paste having metal particles of silver, gold, etc. dispersed in a binder into a patterned shape by printing, etc., followed by baking.
  • the electrode layer is formed of a carbon film, it can be obtained by coating a paste having carbon particles in a binder into a patterned shape by printing, etc., followed by drying.
  • a transparent conductive film such as ITO, indium oxide, tin oxide, tin oxide-antimony, etc. can be obtained by forming a thin film according to such method as sput­tering, vapor deposition, spraying, etc., and then forming the film into a patterned shape by etching, and it can be also formed by coating a paste having fine particles of ITO, tin oxide, tin oxide-antimony dispersed in a binder into a pattern shape by printing, etc., followed by baking.
  • either one of the above first and second electrode layers should form a Schottky junction with the above semiconductor layer 12, and the other electrode layer an ohmic junction with above semiconductor layer.
  • the interface formed be­tween the first or the second electrode layer and the above semiconductor layer 12 forms a Schottky junction or an ohmic junction depending on the materials employed for the electrode layer and the semiconductor layer.
  • the materials should be chosen depending on the pur­pose. For example, when cuprous oxide is employed as the material for the semiconductor layer, a Schottky junction is formed with the semiconductor layer if the electrode layer is copper, while an ohmic junction is formed with the semiconductor layer if the electrode layer is nickel, silver or gold.
  • a Schottky junction is formed with the semiconductor layer if the electrode layer is formed of nickel, copper, gold, platinum, palladium, car­bon or tungsten, while an ohmic junction is formed with the semiconductor layer if the electrode layer is formed of silver or ITO.
  • a metal chalcogenide semiconductor such as CdS, CdSe, CdTe, etc.
  • the electrode layer is Au, Ag, Pt, Pd, Ti, Cu, Ni or stainless steel, a Schottky junction is formed with the semiconductor layer, while an ohmic junc­tion is formed with the semiconductor layer if the elec­trode layer is formed of In, Sn, Zn, Ta or ITO.
  • a metal oxide semiconductor layer or a metal chalcogenide semiconductor layer may be formed on said firsts electrode layer accord­ing to the methods as exemplified below, and then the sec­ond electrode layer may be formed on said semiconductor layer according to the method as described above.
  • the first electrode layer can be also formed into a patterned shape after formation of the semiconductor layer.
  • the method for forming a metal oxide semi­conductor layer or a metal chalcogenide semiconductor layer preferred are, for example, the electrolytic pre­cipitation method, the spraying method, the printing meth­od, etc. inasmuch as a semiconductor layer of a large area can be formed easily. In the following, these methods are to be described successively.
  • cuprous oxide may be included, and as the chalcogenide type semiconductor, for example, CdTe, CdS and CdSe may be included.
  • anode for example, an electrode comprising platinum, carbon, stainless steel, copper, etc. may be employed.
  • the solution to be used as the electrolyte in this method may be obtained by dissolving a suitable metal com­pound or ionizing a metal under appropriate conditions ac­cording to the kind of the desired semiconductor.
  • a metal complex solution containing (1) 0.1 to 1 mol/liter of cupric sulfate anhydride or cupric sulfate pentahydrate, (2) 0.1 to 10 mol/liter of a basic compound such as calcium hydroxide, sodium hydroxide, ammonia, triethylamine, etc., and (3) 0.1 to 5 mol/liter of a coor­dination compound capable of forming a complex with copper under a basic solution dissolved therein may be employed.
  • the coordination compound to be used in the electrolyte there may be employed, for example, aspartic acid, lactic acid, ethylenediaminediacetic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, iminodiacetic acid, malonic acid, nitrilotriacetic acid, or sodium salts of these coordination compounds, and the coordination com­pound is not particularly limited, provided that a copper complex soluble in a basic aqueous solution can be formed.
  • the voltage to be applied between the cathode and the anode may be generally 0.01 to 10 V (DC), preferably 0.05 to 1 V (DC), and the current density of the current which flows through the electrode layer for precipitating cuprous oxide may be generally 0.01 to 50 mA/cm2, preferably 0.1 to 20 mA/cm2.
  • the temperature of the electrolyte may be any temperature within the range where no freezing or boiling of the electrolyte occurs, but preferably within the range from 20°C to 80°C.
  • a semi­conductor layer comprising cuprous oxide having a specific resistivity of 103 to 106 ⁇ cm is formed.
  • an aqueous solution containing (1) 0.01 to 0.5 mole/liter of cadmium chloride, cadmium acetate, cadmium sulfate or cadmium nitrate, (2) 0.05 to 5 mole/liter of an acidic compound such as sul­furic acid, hydrochloric acid, nitric acid, acetic acid, etc., and (3) 0.01 to 0.5 mole/liter of tellurium dioxide dissolved in water may be employed.
  • the voltage to be applied between the cathode and the anode may be generally 0.1 to 5 V (DC), preferably 0.5 to 2 V (DC), and the current density of the current which flows through the electrode layer for precipitating CdTe may be generally 0.01 to 50 mA/cm2, preferably 0.1 tO 20 mA/cm2.
  • the temperature of the electrolyte may be any temperature within the range where no freezing or boiling of the electrolyte occurs, but preferably within the range from 20°C to 85°C.
  • a semiconductor layer comprising CdTe having a specific resistivity of 103 to 106 ⁇ cm is formed.
  • an electrolyte when forming a semiconductor layer comprising CdS, for example, an electrolyte contain­ing (1) 0.01 to 0.5 mole/liter of cadmium chloride, cad­mium acetate, cadmium sulfate or cadmium nitrate, (2) 0,01 to 0.2 mole/liter of sulfur and (3) 0.01 to 1 mole/liter of potassium chloride or sodium chloride dissolved in a solvent such as dimethyl sulfoxide, dimethylformamide, propylene carbonate, etc. may be employed.
  • the voltage to be applied between the cathode and the anode may be generally 0.1 to 5 V (DC), preferably 0.5 to 2 V (DC), and the current density of the current which flows through the electrode layer for precipitating CdS may be generally 0.01 to 50 mA/cm2, preferably 0.1 to 20 mA/cm2.
  • the temperature of the electrolyte may be any temperature within the range where no freezing or boiling of the electrolyte occurs, but preferably within the range from 50°C to 150°C.
  • a semiconductor layer comprising CdS having a specific resistivity of 103 to 106 ⁇ cm is formed.
  • zinc oxide may be in­cluded, and as the chalcogenide semiconductor, CdSe and CdS may be included.
  • a desired metal compound solution may be sprayed or printed on a substrate having the first elec­trode layer formed thereon, and said metal compound pyrolyzed on said substrate, followed by a heat treatment.
  • the semiconductor layer When a semiconductor layer is formed by spraying, the semiconductor layer has to be patterned into a desired shape by a method such as etching, etc.
  • the substrate is to be heated at 100 to 700°C, preferably at 300 to 700°C to form precursor film containing a zinc compound.
  • the compound employed is fixed on the substrate, and a part or all thereof is pyrolyzed to be converted into the oxide.
  • the heat treatment applied thereafter may be conducted at a temperature of 100 to 800°C for about 15 minutes to 8 hours, preferably at 400 to 800°C for 2 to 8 hours. By this treatment, a crystall­ized semiconductor layer comprising zinc oxide is ob­tained.
  • the temperature of the substrate may be heated at 100 to 500°C, preferably 300 to 500°C.
  • the compound employed is fixed on the substrate, and a part or all thereof is pyrolyzed to be converted into CdS.
  • the heat treatment applied there­ after may be conducted at a temperature of 100 to 400°C for about 15 minutes to 4 hours, preferably at 200 to 400°C for 1 to 4 hours. By this treatment, a crystallized semiconductor comprising CdS is obtained.
  • the metal compound solution to be employed for example, (1) an aqueous solution containing 0.001 to 0.5 mole/liter of cadmium chloride, cadmium sulfate, cad­mium acetate, cadmium nitrate, etc. and 0.001 to 0.5 mole/liter of seleniumurea, N,N-dimethylselenourea etc. dissolved in water, (2) the aqueous solution of (1) to which fine particles of CdSe are added, etc. can be in­cluded.
  • the substrate is to be heated at 100 to 500°C, preferably at 300 to 500°C to form precursor film containing a Cd and Se compound.
  • the compound employed is fixed on the substrate, and a part or all thereof is pyrolyzed to be converted into CdSe.
  • the heat treatment applied there­after may be conducted at a temperature of 100 to 400°C for about 15 minutes to 4 hours, preferably at 200 to 400°C for 1 to 4 hours. By this treatment, a crystallized semiconductor comprising CdSe is obtained.
  • a liquid crystal display device is produced, for example, by laminating the active matrix substrate of the present invention and an electrically insulating substrate equipped with transparent electrodes (signal electrodes 21 shown in Fig. 4), one over the other, with a liquid crys­tal interposed therebetween.
  • An example of the liquid crystal display device is shown in Fig. 4.
  • the electri­cally insulating substrate 20 provided as opposed to the active matrix substrate of the present invention is pro­ vided with the transparent electrodes 21 which become the signal electrodes.
  • the transparent electrodes 21, al­though Fig. 4 shows only one electrode, are practically provided in a plural number in a matrix, whereby rows mutually in parallel relationship to each other are formed.
  • each transparent electrode 21 is connected electrically in series with, for example, ITO stripe or metal line, etc., and the row of the transparent electrodes 21 are arranged so as to have right angles or angles approximate to right angle relative to the row of the transparent electrodes 14.
  • At least either one of the electrically insulating substrates 10 and 20 is transparent.
  • an alignment layer 30 On the inner surface of the active matrix sub­strate is provided an alignment layer 30, and a polarizer film 31 on the outer surface.
  • the polarizing axis of the polarizer film 31 is in the same direction as the orienta­tion direction of the alignment layer 30.
  • the alignment layer 32 On the inner surface of the opposite insulating substrate 20 is provided the alignment layer 32, and on its outer surface the polarizer film 33.
  • the polarizing axis of the polarizer film 33 is in the same direction as the orientation direction of the alignment layer 32, and is in relationship to be crossed at right angle with the polarizing axis direction of the polarizer film 31.
  • the liquid crystal 35 is injected to constitute a liquid crystal dis­play device.
  • the equivalent circuit of the liquid crystal dis­play device is shown in Fig. 5 (A).
  • the above equivalent circuit is an example when two diode elemental devices are provided per one picture element, and the equivalent cir­cuits when 4 and 6 diode elemental devices are provided per one picture element are shown in Fig. 5 (B) and Fig. 5 (C), respectively.
  • Example 1 Formation of semiconductor layer according to the electrolytic precipitation method -
  • An active matrix substrate shown in Fig. 2 was prepared as described below.
  • Example 2 Formation of semiconductor layer according to the spraying method -
  • the I-V characteristics of the diode elemental devices of the active matrix substrate obtained were measured, and the rectifying characteristics as schemati­cally shown in Fig. 3 were whereby confirmed.
  • Example 3 Formation of semiconductor layer according to the printing method -
  • the I-V characteristics of the diode elemental devices on the active matrix substrate obtained were measured, and the rectifying characteristics as schemati­cally shown in Fig. 3 were obtained.
  • Each of active matrix substrate formed in Examples 1 to 3, and a glass substrate having transparent electrode corresponding to the size of the transparent electrode 14 was spin-coated with a polyimide solution (manufactured by Japan Synthetic Rubber Co., Ltd., trade name: Optomer AL), dried at room temperature and then subjected to a heat treatment at 200°C, followed by rubbing to form an align­ment layer.
  • a polyimide solution manufactured by Japan Synthetic Rubber Co., Ltd., trade name: Optomer AL
  • the above cell having the liquid crystal injected therein was found to be under light state when no voltage was applied.
  • the voltage shown in Fig. 6 (B) was applied on the scanning electrode 11-1, and the voltage shown in Fig. 6 (C) on the scanning electrode 11-­2, respectively. Further, on the transparent electrodes of the opposite glass substrates, the voltage shown in Fig. 6 (A) was applied. Under this state, the above cell showed dark state.
  • the contrast ratio of lightness to darkness was found to be 30 in the case of using the active matrix sub­strate of Example 1, 25 in the case of Example 2 and 35 in the case of Example 3.
  • a signal having a positive pulse and a negative pulse as shown in Fig. 6 (A) was applied to the transpar­ent electrode on the opposite substrate.
  • the peak voltage of the positive pulse and that of the negative pulse were symmetrically varied from 1.8 to 2.8 V and from -1.8 to -­2.8 V, respectively. As the result, 4 or more stages of brightness were recognized.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
EP19900306737 1989-06-20 1990-06-20 Substrat mit aktiver Matrix für eine Flüssigkristallanzeigevorrichtung Withdrawn EP0404545A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP157321/89 1989-06-20
JP01157321 1989-06-20

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Publication Number Publication Date
EP0404545A2 true EP0404545A2 (de) 1990-12-27
EP0404545A3 EP0404545A3 (de) 1991-11-06

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