EP0346828B1 - Röntgenstrahl-Absorptionsmittel für Röntgenstrahllithographie und Herstellung durch Zerstäubung - Google Patents

Röntgenstrahl-Absorptionsmittel für Röntgenstrahllithographie und Herstellung durch Zerstäubung Download PDF

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Publication number
EP0346828B1
EP0346828B1 EP89110677A EP89110677A EP0346828B1 EP 0346828 B1 EP0346828 B1 EP 0346828B1 EP 89110677 A EP89110677 A EP 89110677A EP 89110677 A EP89110677 A EP 89110677A EP 0346828 B1 EP0346828 B1 EP 0346828B1
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EP
European Patent Office
Prior art keywords
film
ray
stress
sputtering
sputtered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP89110677A
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English (en)
French (fr)
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EP0346828A2 (de
EP0346828A3 (en
Inventor
Masao C/O Fujitsu Limited Yamada
Masafumi C/O Fujitsu Limited Nakaishi
Jinko C/O Fujitsu Limited Kudou
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Fujitsu Ltd
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Fujitsu Ltd
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Publication date
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Publication of EP0346828A2 publication Critical patent/EP0346828A2/de
Publication of EP0346828A3 publication Critical patent/EP0346828A3/en
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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
    • H05G1/08—Electrical details
    • H05G1/26—Measuring, controlling or protecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Definitions

  • a minus sign for the variation indicates that the variation is in the direction of shrinking the substrate.
  • the target holder 15 is water cooled and provided with a plurality of permanent magnets 20 to concentrate the ions on the surface of the target and increase the sputtering efficiency.
  • the features of the apparatus and method are all conventional and widely used, so further description is omitted for the sake of simplicity.
  • the target is fabricated from a mixture or an alloy of the element materials, or two targets made of the respective elements are used.
  • Fig. 7 shows results obtained from experiments in which the content of Al in Ta base metal was varied. The variation of stress against the sputtering pressure of Ar was measured for various sputtered films having different Al contents.
  • the curves in Fig. 7 correspond respectively to the films including Al with the concentrations of 3, 1 and 0.7 wt %. The value of wt % is shown in brackets for each of the curves in Fig. 7.
  • a curve for pure Ta is also added for comparison. As can be seen in the Figure, the right-hand side of the curves for the films including small amounts of Al are all lower than that of pure Ta.
  • the stress in all of the nitrided films is reduced compared to those of unnitrided films (pure Ta or Ta-Al).
  • the slopes of the curves on the right-hand side flank became smoother, and especially in the film sputtered in argon including 30 volume % of nitrogen the stress is very small for a wide pressure range. Also the inclination of the curve at the zero intersection is very gentle. So using this material and gas composition, the stress can be reduced to almost zero.
  • the surface is smooth because the sputtering can be done in a low pressure range.
  • the density of the film is high (12.5 to 16.0), so a high masking effect for X-rays can be achieved. Further, it will be apparent that the control of the sputtering conditions is very easy.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Claims (9)

  1. Röntgenstrahl-Absorptionsfilm aus einem Material, welches Tantal (Ta) als Basismaterial zusammen mit einem oder mehreren von Aluminium (Al), Titan (Ti), Silizium (Si) und Molybdän (Mo) als Zusatzelement (E) in einem Gesamtbetrag von 0,5 bis 10 Gewichtsprozent des Materials umfaßt.
  2. Röntgenstrahl-Absorptionsfilm nach Anspruch 1, bei dem die Gesamtmenge von Al, Ti, Si und Mo von 1 bis 3 Gewichtsprozent beträgt.
  3. Röntgenstrahl-Absobtionsfilm nach Anspruch 1 oder 2, bei dem Ta, Al, ti, Si und Mo in Nitrid-form vorliegen.
  4. Röntgenstrahl-Maske mit einem Röntgenstrahl-Absorptionsfilm nach einem der vorhergehenden Ansprüche, der auf einem Trägerfilm getragen wird.
  5. Röntgenstrahl-Maske nach Anspruch 4, bei dem der Trägerfilm aus Siliziumcarbid hergestellt ist.
  6. Röntgenstrahl-Absorptionsfilm oder -Maske nach einem der vorhergehenden Ansprüche, bei dem der Absorptionsfilm ein gesputterter Film ist.
  7. Verfahren zur Herstellung eines Films oder einer Maske nach einem der vorhergehenden Ansprüche, welches das Sputtern einer Mischung des Basismaterials und des Zusatzelementes oder der Zusatzelemente von einem Verbindungsziel auf ein Substrat in einer Sputter-Kammer umfaßt, welche ein Gas enthält, welches Ziel aus dem genannten Basismaterial besteht und eine Vielzahl von Löchern hat, die in ihm und über seiner Oberfläche gleichmäßig verteilt sind, in welcher Stifte des bzw. der genannten Zusatzelemente eingebettet sind.
  8. Verfahren nach Anspruch 7, bei dem das Gas ein Argon-Gas ist.
  9. Verfahren nach Anspruch 7, bei dem das Gas eine Mischung aus Argon und Stickstoff ist, welche 5 bis 40 Volumenprozent Stickstoff enthält.
EP89110677A 1988-06-14 1989-06-13 Röntgenstrahl-Absorptionsmittel für Röntgenstrahllithographie und Herstellung durch Zerstäubung Expired - Lifetime EP0346828B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14654688A JP2742056B2 (ja) 1988-06-14 1988-06-14 Ｘ線マスク
JP146546/88 1988-06-14

Publications (3)

Publication Number Publication Date
EP0346828A2 EP0346828A2 (de) 1989-12-20
EP0346828A3 EP0346828A3 (en) 1990-03-28
EP0346828B1 true EP0346828B1 (de) 1992-08-26

Family

ID=15410103

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89110677A Expired - Lifetime EP0346828B1 (de) 1988-06-14 1989-06-13 Röntgenstrahl-Absorptionsmittel für Röntgenstrahllithographie und Herstellung durch Zerstäubung

Country Status (4)

Country Link
EP (1) EP0346828B1 (de)
JP (1) JP2742056B2 (de)
KR (1) KR910007247B1 (de)
DE (1) DE68902591T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3119237B2 (ja) 1998-05-22 2000-12-18 日本電気株式会社 Ｘ線マスクとその製造方法及び半導体デバイスとその製造方法
JPS63222109A (ja) * 1987-03-11 1988-09-16 Sunstar Inc 毛髪処理剤
US4886942A (en) * 1989-02-24 1989-12-12 Molex Incorporated Strain relief structure for connecting flat flexible cable to a circuit board
US5196283A (en) * 1989-03-09 1993-03-23 Canon Kabushiki Kaisha X-ray mask structure, and x-ray exposure process
US5464711A (en) * 1994-08-01 1995-11-07 Motorola Inc. Process for fabricating an X-ray absorbing mask
JP2877190B2 (ja) * 1996-01-09 1999-03-31 日本電気株式会社 Ｘ線マスク及びその製造方法
US6066418A (en) * 1996-07-10 2000-05-23 Nec Corporation X-ray mask and fabrication process therefor
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
US6911124B2 (en) 1998-09-24 2005-06-28 Applied Materials, Inc. Method of depositing a TaN seed layer
TWI223873B (en) 1998-09-24 2004-11-11 Applied Materials Inc Nitrogen-containing tantalum films
JP2002246299A (ja) * 2001-02-20 2002-08-30 Oki Electric Ind Co Ltd 反射型露光マスク、反射型露光マスクの製造方法、及び半導体素子
KR101109229B1 (ko) * 2010-05-14 2012-01-30 주식회사 케이이씨 이중 접합 게이트를 갖는 반도체 디바이스 및 그 제조 방법
JP7234033B2 (ja) 2019-05-20 2023-03-07 ユニ・チャーム株式会社 動物用トイレ
JP7699970B2 (ja) * 2021-06-10 2025-06-30 Hoya株式会社 マスクブランク、反射型マスク及び半導体デバイスの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1447976A1 (de) * 1965-09-30 1969-10-09 Telefunken Patent Verfahren zum Herstellen von Belichtungsmasken mit hohem Kontrast
US3873824A (en) * 1973-10-01 1975-03-25 Texas Instruments Inc X-ray lithography mask
JPS63136521A (ja) * 1986-11-27 1988-06-08 Sharp Corp Ｘ線リソグラフイ−用マスク
JP3343976B2 (ja) * 1993-02-18 2002-11-11 松下電器産業株式会社 衛生洗浄装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
16TH INT. CONF. SOLID STATE DEVICES AND MATERIALS, August 30 - September 1, 1984, Kobe, pages 23-26, Tolyo, JP; M. SEKIMOTO et al.: "A high contrast submicron X-ray mask with Ta absorber patterns" *
PATENT ABSTRACTS OF JAPAN, vol. 9, no. 157 (P-369)(1880), July 2, 1985, & JP-A-60 33 556 *
PATENT ABSTRACTS OF JAPAN, vol. 9, no. 157, (P-369)(1880), July 2, 1985; & JP-A-60 33 555 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US7687909B2 (en) 1997-11-26 2010-03-30 Applied Materials, Inc. Metal / metal nitride barrier layer for semiconductor device applications

Also Published As

Publication number Publication date
JP2742056B2 (ja) 1998-04-22
KR910007247B1 (en) 1991-09-24
DE68902591D1 (de) 1992-10-01
JPH022109A (ja) 1990-01-08
EP0346828A2 (de) 1989-12-20
DE68902591T2 (de) 1993-04-08
EP0346828A3 (en) 1990-03-28
KR910002308A (ko) 1991-01-31

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