EP0346828B1 - Röntgenstrahl-Absorptionsmittel für Röntgenstrahllithographie und Herstellung durch Zerstäubung - Google Patents
Röntgenstrahl-Absorptionsmittel für Röntgenstrahllithographie und Herstellung durch Zerstäubung Download PDFInfo
- Publication number
- EP0346828B1 EP0346828B1 EP89110677A EP89110677A EP0346828B1 EP 0346828 B1 EP0346828 B1 EP 0346828B1 EP 89110677 A EP89110677 A EP 89110677A EP 89110677 A EP89110677 A EP 89110677A EP 0346828 B1 EP0346828 B1 EP 0346828B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- film
- ray
- stress
- sputtering
- sputtered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 48
- 238000000034 method Methods 0.000 title claims description 20
- 239000006096 absorbing agent Substances 0.000 title description 15
- 238000004519 manufacturing process Methods 0.000 title description 6
- 238000001015 X-ray lithography Methods 0.000 title description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 239000000654 additive Substances 0.000 claims description 30
- 230000000996 additive effect Effects 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 17
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 229910052715 tantalum Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000010953 base metal Substances 0.000 description 24
- 230000000694 effects Effects 0.000 description 15
- 150000004767 nitrides Chemical class 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004445 quantitative analysis Methods 0.000 description 2
- 229910018509 Al—N Inorganic materials 0.000 description 1
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
- H05G1/08—Electrical details
- H05G1/26—Measuring, controlling or protecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Definitions
- a minus sign for the variation indicates that the variation is in the direction of shrinking the substrate.
- the target holder 15 is water cooled and provided with a plurality of permanent magnets 20 to concentrate the ions on the surface of the target and increase the sputtering efficiency.
- the features of the apparatus and method are all conventional and widely used, so further description is omitted for the sake of simplicity.
- the target is fabricated from a mixture or an alloy of the element materials, or two targets made of the respective elements are used.
- Fig. 7 shows results obtained from experiments in which the content of Al in Ta base metal was varied. The variation of stress against the sputtering pressure of Ar was measured for various sputtered films having different Al contents.
- the curves in Fig. 7 correspond respectively to the films including Al with the concentrations of 3, 1 and 0.7 wt %. The value of wt % is shown in brackets for each of the curves in Fig. 7.
- a curve for pure Ta is also added for comparison. As can be seen in the Figure, the right-hand side of the curves for the films including small amounts of Al are all lower than that of pure Ta.
- the stress in all of the nitrided films is reduced compared to those of unnitrided films (pure Ta or Ta-Al).
- the slopes of the curves on the right-hand side flank became smoother, and especially in the film sputtered in argon including 30 volume % of nitrogen the stress is very small for a wide pressure range. Also the inclination of the curve at the zero intersection is very gentle. So using this material and gas composition, the stress can be reduced to almost zero.
- the surface is smooth because the sputtering can be done in a low pressure range.
- the density of the film is high (12.5 to 16.0), so a high masking effect for X-rays can be achieved. Further, it will be apparent that the control of the sputtering conditions is very easy.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Claims (9)
- Röntgenstrahl-Absorptionsfilm aus einem Material, welches Tantal (Ta) als Basismaterial zusammen mit einem oder mehreren von Aluminium (Al), Titan (Ti), Silizium (Si) und Molybdän (Mo) als Zusatzelement (E) in einem Gesamtbetrag von 0,5 bis 10 Gewichtsprozent des Materials umfaßt.
- Röntgenstrahl-Absorptionsfilm nach Anspruch 1, bei dem die Gesamtmenge von Al, Ti, Si und Mo von 1 bis 3 Gewichtsprozent beträgt.
- Röntgenstrahl-Absobtionsfilm nach Anspruch 1 oder 2, bei dem Ta, Al, ti, Si und Mo in Nitrid-form vorliegen.
- Röntgenstrahl-Maske mit einem Röntgenstrahl-Absorptionsfilm nach einem der vorhergehenden Ansprüche, der auf einem Trägerfilm getragen wird.
- Röntgenstrahl-Maske nach Anspruch 4, bei dem der Trägerfilm aus Siliziumcarbid hergestellt ist.
- Röntgenstrahl-Absorptionsfilm oder -Maske nach einem der vorhergehenden Ansprüche, bei dem der Absorptionsfilm ein gesputterter Film ist.
- Verfahren zur Herstellung eines Films oder einer Maske nach einem der vorhergehenden Ansprüche, welches das Sputtern einer Mischung des Basismaterials und des Zusatzelementes oder der Zusatzelemente von einem Verbindungsziel auf ein Substrat in einer Sputter-Kammer umfaßt, welche ein Gas enthält, welches Ziel aus dem genannten Basismaterial besteht und eine Vielzahl von Löchern hat, die in ihm und über seiner Oberfläche gleichmäßig verteilt sind, in welcher Stifte des bzw. der genannten Zusatzelemente eingebettet sind.
- Verfahren nach Anspruch 7, bei dem das Gas ein Argon-Gas ist.
- Verfahren nach Anspruch 7, bei dem das Gas eine Mischung aus Argon und Stickstoff ist, welche 5 bis 40 Volumenprozent Stickstoff enthält.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14654688A JP2742056B2 (ja) | 1988-06-14 | 1988-06-14 | X線マスク |
JP146546/88 | 1988-06-14 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0346828A2 EP0346828A2 (de) | 1989-12-20 |
EP0346828A3 EP0346828A3 (en) | 1990-03-28 |
EP0346828B1 true EP0346828B1 (de) | 1992-08-26 |
Family
ID=15410103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP89110677A Expired - Lifetime EP0346828B1 (de) | 1988-06-14 | 1989-06-13 | Röntgenstrahl-Absorptionsmittel für Röntgenstrahllithographie und Herstellung durch Zerstäubung |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0346828B1 (de) |
JP (1) | JP2742056B2 (de) |
KR (1) | KR910007247B1 (de) |
DE (1) | DE68902591T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7687909B2 (en) | 1997-11-26 | 2010-03-30 | Applied Materials, Inc. | Metal / metal nitride barrier layer for semiconductor device applications |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3119237B2 (ja) | 1998-05-22 | 2000-12-18 | 日本電気株式会社 | X線マスクとその製造方法及び半導体デバイスとその製造方法 |
JPS63222109A (ja) * | 1987-03-11 | 1988-09-16 | Sunstar Inc | 毛髪処理剤 |
US4886942A (en) * | 1989-02-24 | 1989-12-12 | Molex Incorporated | Strain relief structure for connecting flat flexible cable to a circuit board |
US5196283A (en) * | 1989-03-09 | 1993-03-23 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
US5464711A (en) * | 1994-08-01 | 1995-11-07 | Motorola Inc. | Process for fabricating an X-ray absorbing mask |
JP2877190B2 (ja) * | 1996-01-09 | 1999-03-31 | 日本電気株式会社 | X線マスク及びその製造方法 |
US6066418A (en) * | 1996-07-10 | 2000-05-23 | Nec Corporation | X-ray mask and fabrication process therefor |
US6139699A (en) * | 1997-05-27 | 2000-10-31 | Applied Materials, Inc. | Sputtering methods for depositing stress tunable tantalum and tantalum nitride films |
US6911124B2 (en) | 1998-09-24 | 2005-06-28 | Applied Materials, Inc. | Method of depositing a TaN seed layer |
TWI223873B (en) | 1998-09-24 | 2004-11-11 | Applied Materials Inc | Nitrogen-containing tantalum films |
JP2002246299A (ja) * | 2001-02-20 | 2002-08-30 | Oki Electric Ind Co Ltd | 反射型露光マスク、反射型露光マスクの製造方法、及び半導体素子 |
KR101109229B1 (ko) * | 2010-05-14 | 2012-01-30 | 주식회사 케이이씨 | 이중 접합 게이트를 갖는 반도체 디바이스 및 그 제조 방법 |
JP2022188992A (ja) * | 2021-06-10 | 2022-12-22 | Hoya株式会社 | マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1447976A1 (de) * | 1965-09-30 | 1969-10-09 | Telefunken Patent | Verfahren zum Herstellen von Belichtungsmasken mit hohem Kontrast |
US3873824A (en) * | 1973-10-01 | 1975-03-25 | Texas Instruments Inc | X-ray lithography mask |
JPS63136521A (ja) * | 1986-11-27 | 1988-06-08 | Sharp Corp | X線リソグラフイ−用マスク |
JP3343976B2 (ja) * | 1993-02-18 | 2002-11-11 | 松下電器産業株式会社 | 衛生洗浄装置 |
-
1988
- 1988-06-14 JP JP14654688A patent/JP2742056B2/ja not_active Expired - Fee Related
-
1989
- 1989-06-13 DE DE8989110677T patent/DE68902591T2/de not_active Expired - Fee Related
- 1989-06-13 EP EP89110677A patent/EP0346828B1/de not_active Expired - Lifetime
- 1989-06-14 KR KR8908154A patent/KR910007247B1/ko not_active IP Right Cessation
Non-Patent Citations (3)
Title |
---|
16TH INT. CONF. SOLID STATE DEVICES AND MATERIALS, August 30 - September 1, 1984, Kobe, pages 23-26, Tolyo, JP; M. SEKIMOTO et al.: "A high contrast submicron X-ray mask with Ta absorber patterns" * |
PATENT ABSTRACTS OF JAPAN, vol. 9, no. 157 (P-369)(1880), July 2, 1985, & JP-A-60 33 556 * |
PATENT ABSTRACTS OF JAPAN, vol. 9, no. 157, (P-369)(1880), July 2, 1985; & JP-A-60 33 555 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7687909B2 (en) | 1997-11-26 | 2010-03-30 | Applied Materials, Inc. | Metal / metal nitride barrier layer for semiconductor device applications |
Also Published As
Publication number | Publication date |
---|---|
JPH022109A (ja) | 1990-01-08 |
EP0346828A2 (de) | 1989-12-20 |
EP0346828A3 (en) | 1990-03-28 |
KR910007247B1 (en) | 1991-09-24 |
KR910002308A (ko) | 1991-01-31 |
DE68902591D1 (de) | 1992-10-01 |
DE68902591T2 (de) | 1993-04-08 |
JP2742056B2 (ja) | 1998-04-22 |
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