EP0327068A2 - Substrat pour la fabrication d'un circuit à film épais - Google Patents

Substrat pour la fabrication d'un circuit à film épais Download PDF

Info

Publication number
EP0327068A2
EP0327068A2 EP89101743A EP89101743A EP0327068A2 EP 0327068 A2 EP0327068 A2 EP 0327068A2 EP 89101743 A EP89101743 A EP 89101743A EP 89101743 A EP89101743 A EP 89101743A EP 0327068 A2 EP0327068 A2 EP 0327068A2
Authority
EP
European Patent Office
Prior art keywords
substrate
film
surface film
thickness
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP89101743A
Other languages
German (de)
English (en)
Other versions
EP0327068A3 (fr
EP0327068B1 (fr
Inventor
Yoshiro C/O Mitsubishi Kuromitsu
Hideaki C/O Mitsubishi Yoshida
Chuji C/O Mitsubishi Tanaka
Hiroto C/O Mitsubishi Uchida
Kenji Morinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Metal Corp
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63021579A external-priority patent/JPH0834266B2/ja
Application filed by Mitsubishi Metal Corp, Mitsubishi Materials Corp filed Critical Mitsubishi Metal Corp
Publication of EP0327068A2 publication Critical patent/EP0327068A2/fr
Publication of EP0327068A3 publication Critical patent/EP0327068A3/fr
Application granted granted Critical
Publication of EP0327068B1 publication Critical patent/EP0327068B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Definitions

  • This invention relates to a substrate and, more particularly, to a substrate suitable for fabrication of a thick film circuit in a high integration density.
  • a wide variety of an insulating substrate is used for fabrication of a thick film circuit such as, for example, a hybrid integrated circuit, and various materials are available for formation of the insulating substrate.
  • a typical example of such a material is aluminum oxide containing about 4 % of miscellaneous substances by weight, and the miscellaneous substances are of silicon oxide, magnesium oxide and calcium oxide.
  • the aluminum oxide substrate is superior in dielectric properties, thermal properties and the mechanical properties to the resin substrate, and, for this reason, the aluminum oxide substrate is shaped into various configuration and widely used by the circuit composers.
  • the present invention proposes to coat a foundation of an aluminum nitride with a surface film containing silicon atoms.
  • a substrate used for fabrication of a thick film circuit comprising: a) a foundation of an aluminum nitride having a major surface; and b) a surface film provided on the major surface of the foundation and formed of an oxygen compound containing silicon atoms.
  • the surface film may be formed of a silicon oxide or an oxygen compound containing aluminum atoms and silicon atoms deposited to a thickness ranging between about 0.1 micron and about 20 microns.
  • an intermediate film is provided between the foundation and the surface film for improvement in bonding strength, and the substance of the intermediate film is smaller in reactivity with frits than the aluminum nitride.
  • Fig. 1 of the drawings there is shown the structure of a substrate embodying the present invention, and the substrate is formed in a multi-level structure.
  • the substrate illustrated in Fig. 1 comprises a foundation 1 of aluminum nitride represented by the molecular formula of AlN, and a surface film 2 of a silicon oxide represented by the molecular formula of SiO2.
  • the aluminum oxide represented by the molecular formula Al2O3 has a heat conductivity of about 0.052 cal/sec. cm deg., and the heat conductivity of the aluminum nitride is as large as about 0.620 cal/sec. cm deg.. Then, the substrate according to the present invention is improved in heat radiation capability with respect to the prior-art substrate using the aluminum oxide.
  • the aluminum nitride is liable to produce foamable gases as a result of reactions with some substances contained in a paste used in screen printing techniques, and, for this reason, a substrate formed of the aluminum nitride only is hardly used in the formation of a thick film circuit.
  • the paste contains frits such as, for example, lead oxide or bismuth oxide, and these frits reacts with aluminum nitride.
  • frits such as, for example, lead oxide or bismuth oxide
  • the foamable gases tend to be produced and cause the interface between the aluminum nitride and the sintered product to have hollow spaces after the evacuation of the foamable gases.
  • the foamable gases are operative to decrease the contact area therebetween, so that the thick film pattern produced by sinter­ing the printed film is liable to peel from the aluminum nitride substrate.
  • the substrate according to the present invention is provided with the surface film 2 of the silicon oxide covering the foundation 1.
  • the surface film 2 is deposited to a thickness ranging between about 0.1 micron and about 20 microns by using a physical deposition technique or a chemical deposition technique.
  • a sputtering technique is, by way of example, employed for the deposition of the surface film, however, a sol-gel method or a photo assisted chemical vapor deposition technique may be alternatively used.
  • the silicon oxide reacts with the frits without formation of any foamable gases and, accordingly, provides silicon atoms into the paste, These silicon atoms are conducive to improvement in bonding strength between the aluminum nitride and the paste.
  • One of the reasons why the bonding strength is improved is considered to enhance the viscosity of the frits.
  • the first formation process starts with preparation of an aluminum nitride powder the particles of which are about 1 micron in average diameter.
  • the aluminum nitride powder is mixed into an organic binder to produce a paste, and the paste is shaped into a green sheet.
  • the green sheet is placed into a nitrogen ambient of the atmospheric pressure.
  • the green sheet is heated to about 1800 degrees in centigrade and kept in the high temperature nitrogen ambient for about 120 minutes for sintering.
  • a ceramic sheet thus produced by the sintering measures about 25.4 millimeters x about 25.4 millimeters and is about 2 millimeters in thickness and serves as the foundation 1 of the substrate.
  • the ceramic sheet is then placed in an RF diode sputtering system using a target of quartz having a purity of about 99.9 %.
  • the target is about 100 millimeters in diameter and about 10 millimeters in thickness.
  • the ceramic sheet is driven for rotation at about 10 r.p.m. and the sputtering is carried out at about 100 watts.
  • the heat conductivity and a peeling strength are measured for each sample as shown in Table 1.
  • the heat conductivity is measured by using a laser flushing method.
  • the peeling strength is measured for an evaluation of the bonding strength.
  • a conductive paste of a silver-palladium alloy is screen printed on each of the samples including the ceramic sheet without the surface film, and the printed paste line contains frits such as, for example, a lead oxide ( PbO ) and a bismuth oxide ( Bi2O3 ).
  • the sample with the printed paste line is placed in a high temperature ambient of about 850 degrees in centigrade for about 10 minutes for sintering, then a conductive strip 3 is produced on the sample.
  • the conductive strip 3 is square of about 2 millimeters x about 2 millimeters.
  • a non-­oxidized copper wire 4 is prepared and soldered to the conductive strip 3 at about 215 degrees in centigrade.
  • the copper wire 4 is about 0.9 millimeter in diameter, and an eutectic alloy 5 of tin and lead is used for the soldering.
  • the copper wire 4 thus soldered is pulled in a direction indicated by an arrow T. The pulling force is increased until the conductive strip 3 begins to peel, and the peeling strength is calculated as dividing the maximum pulling force by a unit area of 4 square millimeters.
  • the second formation process is similar in the formation of the ceramic sheet to the first formation process, however, the surface film is deposited by using the sol-gel technique. Namely, after the formation of the ceramic sheet, about 347 grams of ethyl silicate, about 500 grams of ethyl alcohol and about 190.2 grams of 0.3 % hydrochlorid acid are mixed for producing a solution, and the solution is spun onto the ceramic sheet at about 500 r.p.m. The ceramic sheet with the wetted surface is placed in a high temperature ambient of about 900 degrees in centigrade for about 10 minutes so as to calcine the solution. Thus, a thin film of silicon dioxide is formed on the ceramic sheet, the spin coating and the calcining are repeated certain times for adjusting the thickness of the surface film 2. Some samples are thus formed and are different in the thickness of the surface film from one another. The heat conductivity and the peeling strength are also measured for these samples as shown in Table 1.
  • the third formation process is characterized by the photo assisted chemical vapor deposition technique.
  • the ceramic sheet is placed in a reactor.
  • a low pressure ambient of about 0.2 torr is created in the reactor, and a mercury lamp is used for a photo radiation.
  • the ceramic sheet is heated to about 150 degrees in centigrade, and a gaseous mixture of silane and oxygen is supplied to the reactor for the deposition of silicon dioxide. In this instance, the proportion of silane to oxygen is about 0.015 by mole.
  • Some samples are formed in accordance with the third process and are different in the thickness of the surface film by controlling the reacting time period. The heat conductivity and the peeling strength are also measured for these samples as shown in Table 1.
  • the prior-art substrate of the aluminum oxide is formed by the following process. First, an aluminum oxide powder is prepared. The aluminum oxide is about 96 % in purity and about 2 microns in average diameter. The aluminum oxide powder is mixed with an organic binder to produce a paste. The paste is shaped into a sheet and, then, placed in an atmospheric ambient at about 1600 degrees in centigrade for about 120 minutes for sintering. The prior-art sample is similar in geometry to the samples formed by the above mentioned processes.
  • the substrate according to the present invention is advangateous over the prior-art substrate in heat conductivity without sacrifice of the peeling strength. If the surface face film 2 is less than about 0.1 micron, the thick film is not reliable due to the small peeling strength. This reduction in peeling strength is causative of projections of melted frits into the aluminum nitride and the foamable gases are produced at the interface between the aluminum nitride and the conductive line. On the other hand, if the surface film 2 is deposited to a thickness larger in value than about 20 microns, the heat conductivity is too small to fabricate a thick film circuit at a high integration density. This is because of the fact that the silicon oxide has the heat conductivity of about 0.0037.
  • the second embodiment of the substrate according to the present invention has the two-level structure as similar to the substrate shown in Fig. 1, i.e., a foundation coated with a surface film.
  • the foundation is also formed of the aluminum nitride, however, the surface film is formed of an oxygen compound containing aluminum atoms and silicon atoms.
  • a typical example of such an oxygen compound is represented by the molecular formula of 3Al2O32SiO2.
  • the first formation process starts with preparation of an aluminum nitride powder the particles of which are about 1 microns in average diameter.
  • the aluminum nitride powder is mixed with an organic binder to produce a paste, and the paste is shaped into a green sheet.
  • the green sheet is placed in a nitrogen ambient of the atmospheric pressure.
  • the green sheet is heated to about 1800 degrees in centigrade and kept in the high temperature nitrogen ambient for about 120 minutes for sintering.
  • a ceramic sheet thus produced by the sintering is square shape of about 25.4 millimeters x about 25.4 millimeters and about 3 millimeters in thickness.
  • the ceramic sheet is then placed in an RF diode sputtering system using a target the substance of which is represented by the formula of 3Al2O3-2SiO2.
  • the target is about 100 millimeters in diameter and about 10 millimeters in thickness.
  • the ceramic sheet is driven for rotation at about 10 r.p.m. and the sputtering is carried out at about 100 watts.
  • the second formation process is similar in the formation of the ceramic sheet to the first formation process, however, the surface film is deposited by using the sol-gel technique. Namely, after the formation of the ceramic sheet, about 347 grams of ethyl silicate, about 560 grams of aluminum ethyl acetaacetate diisopropyleto, about 500 grams of ethyl alcohol and about 190 grams of 0.3 % hydrochlorid acid are mixed for producing a solution, and the solution is spun onto the ceramic disk at about 500 r.p.m. The ceramic sheet with the wetted surface is placed in a high temperature ambient of about 850 degrees in centigrade for about 10 minutes for a calcining.
  • a thin film of the oxygen compound is formed on the ceramic sheet, the spin coating and the calcining are repeated certain times for adjusting the thickness of the surface film. Some samples are thus formed and are different in the thickness of the surface film from one another. The heat conductivity and the peeling strength are also measured for these samples as shown in Table 2.
  • the substrate according to the present invention is advangateous over the prior-art substrate in heat conductivity without sacrifice of the peeling strength.
  • the substrate with the surface film less than about 0.1 micron is too small to rely thereupon.
  • the heat conductivity is not improved to fabricate a thick film circuit at a high integration density.
  • the substrate of the second embodiment is further improved in heat conductivity, because the surface film is formed of the oxygen compound containing the silicon oxide less than that of the first embodiment.
  • the three-level structure is formed by a foundation 6 of the aluminum nitride, an intermediate film 7 of an aluminum oxide represented by the molecular formula of Al2O3 and a surface film 8 of a silicon oxide represented by the molecular formula of SiO2.
  • the intermediate film 7 aims at preventing the foundation from reactions with frits contained in a paste used in the screen printing techniques. This is because of the fact that aluminum oxide is less reactive with the frits such as, for example, lead oxide and bismuth oxide than the aluminum nitride.
  • the intermediate film 7 has a thickness ranging between about 0.09 micron and about 19.3 microns, and the thickness of the surface film 8 ranges from about 0.01 micron to about 3.5 microns. If the intermediate film 7 is less than about 0.09 micron, the projections of the melted frits are hardly interrupted. On the other hand, if the intermediate film is equal to or greater than about 0.09 micron under the sintering at about 850 degrees in centigrade for about 10 minutes, the frits in the presence of the silicon atoms remain in a paste used for formation of a thick film pattern, thereby being capable of enhancing the bonding strength. The heat conductivity of the substrate is still further improved without sacrifice of the peeling strength in comparison with the first embodiment in so far as the total thickness of the intermediate film 7 and the surface film 8 remains under about 20 microns.
  • the internediate film 7 is formed by using a sputtering technique, an oxidation technique carried out in the presence of oxygen, and a chemical vapor deposition technique.
  • the oxidation technique is desirable for the formation of the intermediate film of the aluminum oxide.
  • the oxidation is by way of example carried out at about 1100 degrees to about 1500 degrees in centigrade in the presence of oxygen ranging from about 1 atm to about 10 ⁇ 2 atm.
  • the silicon oxide is deposited by using a physical deposition technique such as, for example, a sputtering technique, a sol-gel technique or a chemical vapor deposition technique.
  • the formation process is hereinunder described in detail.
  • the process starts with preparation of an aluminum nitride powder the particles of which are about 1 microns in average diameter.
  • the aluminum nitride powder is mixed with an organic binder to produce a paste.
  • the paste is shaped into a green sheet and placed in a nitrogen ambient of the atmospheric pressure at about 1800 degrees in centigrade for about 120 minutes so as to sinter the green sheet.
  • a plurality of ceramic sheets are produced through the sintering stage, and each of the ceramic sheets is square in shape measuring as about 25.4 millimeters x about 25.4 millimeters, the thickness thereof is about 2 millimeters.
  • the ceramic sheets serve as the foundations.
  • the intermediate films are formed on the ceramic sheets, respectively.
  • the sputtering technique, the oxidation technique and the chemical vapor deposition technique are applied thereto. Namely, the ceramic sheet is placed in an RF diode sputtering system accompanied with a target of the aluminum oxide ( Al2O3 ) with a purity of about 99.5 %. The target is about 100 millimeters in diameters and about 10 millimeters in thickness.
  • the ceramic sheet is driven for rotation at about 10 r.p.m., and the sputtering is carried out at about 100 watts.
  • the intermediate films 7 are deposited on some ceramic sheets, and the thicknesses thereof are different from one another by changing the sputtering time period.
  • an oxidation ambient is created in the presence of oxygen of about 10 ⁇ 1 atm, and the ceramic sheet is heated to about 1300 degrees in centigrade.
  • the surface of the ceramic sheet is oxidized to form the aluminum oxide, and the thickness of the aluminum oxide film is adjusted by controlling the reacting time period.
  • Some intermediate films 7 are thus formed on the ceramic sheet, respectively.
  • the intermediate film 7 is formed by using the chemical vapor deposition technique, the ceramic sheet is placed in a reactor chamber, and a gaseous mixture is supplied to the reactor chamber.
  • the gaseous mixture contains hydrogen, aluminum chloride and carbon dioxide, and the flow rates are about 5 liters per minute for hydrogen, about 100 cubic centimeters per minute for aluminum chloride and about 150 cubic centimeters per minute for carbon dioxide.
  • the chemical vapor deposition is carried out at about 1020 degrees in centigrade in about 40 torr, and the reaction time period is varied for formation of the intermediate films 7 with different thicknesses.
  • the surface film 8 is deposited on each of the intermediate films 7, and a sputtering technique, a sol-gel technique and a photo assisted chemical vapor deposition technique are applied to the resultant structures of the previous stage.
  • a sputtering technique a quartz target with the purity of about 99.9 % is set in the RF diode sputtering system, however, the other sputtering conditions are similar to those of the deposition of the aluminum oxide.
  • the sol-gel technique starts with preparation of a solution by mixing about 347 grams of ethyl silicate, about 500 grams of ethyl alcohol and about 190.2 grams of 0.3 % hydrochlorid acid. The solution is spun onto the ceramic sheet at about 500 r.p.m.
  • the ceramic sheet with the wetted surface is placed in a high temperature ambient of about 900 degrees in centigrade for about 10 minutes for the calcining.
  • a thin film of the silicon oxide is formed on the ceramic sheet, the spin coating and the calcining are repeated certain times for adjusting the thickness of the surface film 8.
  • Some samples are thus formed and are different in the thickness of the surface film from one another.
  • the silicon oxide is deposited by using the photo assisted chemical vapor deposition technique, the ceramic sheet is placed in a reactor.
  • a low pressure ambient of about 0.2 torr is created in the reactor, and a mercury lamp is used for a photo radiation.
  • the ceramic sheet is heated to about 150 degrees in centigrade, and a gaseous mixture of silane and oxygen is supplied to the reactor for the deposition of silicon dioxide.
  • the proportion of silane to oxygen is about 0.015 by mole.
  • the silicon oxide films are different in the thickness by controlling the reacting time period. Table 3 shows the samples formed by using the above processes.
  • the prior-art substrate of the aluminum oxide is formed by the following process. First, an aluminum oxide powder is prepared. The aluminum oxide is about 96 % in purity and about 2 microns in average diameter. The aluminum oxide powder is mixed with an organic binder to produce a paste. The paste is shaped into a green sheet and, then, placed in an atmospheric ambient at about 1600 degrees in centigrade for about 120 minutes for sintering. The prior-art sample is similar in geometry to the samples formed by the above mentioned processes.
  • the peeling strength is maintained even if the surface film is decreased to a thickness less than about 0.1 micron. This advantage is resulted from the intermediate film which is operative to restrict the projections of the melted frits.
  • the substrate of the third embodiment is still further improved in heat conductivity, since the silicon oxide with the small heat conductivity is reduced in thickness.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)
  • Ceramic Products (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
EP89101743A 1988-02-01 1989-02-01 Substrat pour la fabrication d'un circuit à film épais Expired - Lifetime EP0327068B1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2158088 1988-02-01
JP63021579A JPH0834266B2 (ja) 1988-02-01 1988-02-01 放熱性のすぐれた半導体装置用基板
JP21579/88 1988-02-01
JP21580/88 1988-02-01
JP24628/88 1988-02-04
JP2462888 1988-02-04

Publications (3)

Publication Number Publication Date
EP0327068A2 true EP0327068A2 (fr) 1989-08-09
EP0327068A3 EP0327068A3 (fr) 1991-01-09
EP0327068B1 EP0327068B1 (fr) 1995-08-30

Family

ID=27283481

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89101743A Expired - Lifetime EP0327068B1 (fr) 1988-02-01 1989-02-01 Substrat pour la fabrication d'un circuit à film épais

Country Status (3)

Country Link
US (1) US5134029A (fr)
EP (1) EP0327068B1 (fr)
DE (1) DE68923980T2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0399265A2 (fr) * 1989-05-22 1990-11-28 Mitsubishi Materials Corporation Substrat utilisé pour la fabrication d'un circuit à film épais
EP0381242B1 (fr) * 1989-02-03 1992-05-27 Mitsubishi Materials Corporation Substrat pour la fabrication d'un circuit à couche épaisse

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008047572A1 (fr) * 2006-09-28 2008-04-24 Pioneer Corporation Matériau à base d'oxyde, substrat à motifs, procédé de formation de motifs, procédé de fabrication d'une matrice de transfert pour impression, procédé de fabrication d'un support d'enregistrement, matrice de transfert pour impression et support d'enregistrement

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0153737A2 (fr) * 1984-02-27 1985-09-04 Kabushiki Kaisha Toshiba Substrat pour circuit à haute thermoconductivité

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811390A (ja) * 1981-07-13 1983-01-22 Teizaburo Miyata 湯沸器内の通水吸熱方法とその装置
JPS58101442A (ja) * 1981-12-11 1983-06-16 Hitachi Ltd 電気的装置用基板
JPH0679993B2 (ja) * 1985-11-22 1994-10-12 住友電気工業株式会社 金属化面を持つ窒化アルミニウム焼結体の製造方法
JPS62207789A (ja) * 1986-03-08 1987-09-12 日本特殊陶業株式会社 窒化アルミニウム製基材の表面構造及びその製造法
JPH0676264B2 (ja) * 1986-03-18 1994-09-28 住友電気工業株式会社 ガラス層を有する窒化アルミニウム焼結体並びにその製造方法
US4835039A (en) * 1986-11-26 1989-05-30 Ceramics Process Systems Corporation Tungsten paste for co-sintering with pure alumina and method for producing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0153737A2 (fr) * 1984-02-27 1985-09-04 Kabushiki Kaisha Toshiba Substrat pour circuit à haute thermoconductivité

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOLID STATE TECHNOLOGY. vol. 29, no. 10, October 1986, WASHINGTON US pages 135 - 138; N. IWASE et al: "Aluminum nitride substrates having high thermal conductivity" *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0381242B1 (fr) * 1989-02-03 1992-05-27 Mitsubishi Materials Corporation Substrat pour la fabrication d'un circuit à couche épaisse
EP0399265A2 (fr) * 1989-05-22 1990-11-28 Mitsubishi Materials Corporation Substrat utilisé pour la fabrication d'un circuit à film épais
EP0399265A3 (fr) * 1989-05-22 1992-03-25 Mitsubishi Materials Corporation Substrat utilisé pour la fabrication d'un circuit à film épais

Also Published As

Publication number Publication date
EP0327068A3 (fr) 1991-01-09
DE68923980T2 (de) 1996-04-11
US5134029A (en) 1992-07-28
DE68923980D1 (de) 1995-10-05
EP0327068B1 (fr) 1995-08-30

Similar Documents

Publication Publication Date Title
US5393558A (en) Method of bonding a conductor composition including a lithium compound to an aluminum nitride substrate
US5912066A (en) Silicon nitride circuit board and producing method therefor
US5294388A (en) Heat conductive colored aluminum nitride sintered body and method of preparing the same
WO1995017355A1 (fr) Processus de frittage a basse temperature pour des ceramiques en nitrure d'aluminium
EP0300561B1 (fr) Procédé pour la fabrication d'oxydes supraconducteurs et conclus minces de ces oxydes
EP0230675B1 (fr) Substrat en céramique pour connexion et procédé pour sa fabrication
EP0327068B1 (fr) Substrat pour la fabrication d'un circuit à film épais
EP0399265B1 (fr) Substrat utilisé pour la fabrication d'un circuit à film épais
EP0381242B1 (fr) Substrat pour la fabrication d'un circuit à couche épaisse
US4673587A (en) Method of producing a composite ceramic body
JP2533679B2 (ja) 盤状セラミックスヒ―タ―及びその製造方法
JPH01171247A (ja) 超伝導体配線の構造
JPS62216979A (ja) ガラス層を有する窒化アルミニウム焼結体並びにその製造方法
JPH03193686A (ja) 窒化アルミニウム焼結体への金属化層形成方法
JP2678213B2 (ja) 窒化アルミニウム焼結体の製造方法
US4963514A (en) Ceramic mullite-silica glass composite
JPS62216983A (ja) 金属化層を有する窒化アルミニウム焼結体並びにその製造方法
JPH0725617B2 (ja) 窒化アルミニウム基板およびその製造方法
JPH02291611A (ja) 酸化物超伝導膜の製造方法
US4631160A (en) Method of manufacturing ceramic substrate for fine-line electrical circuitry
US5292552A (en) Method for forming metallized layer on an aluminum nitride sintered body
JP2949294B2 (ja) 窒化アルミニウム質基板及びその製造方法
JP3399079B2 (ja) 誘電体薄膜と誘電体薄膜素子及びその製造方法
JPH07283069A (ja) 誘電体薄膜およびその製造方法
EP0426609A2 (fr) Substrat isolant en céramique et procédé de sa fabrication

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB NL

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB NL

17P Request for examination filed

Effective date: 19910415

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: MITSUBISHI MATERIALS CORPORATION

17Q First examination report despatched

Effective date: 19930127

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB NL

REF Corresponds to:

Ref document number: 68923980

Country of ref document: DE

Date of ref document: 19951005

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 19970113

Year of fee payment: 9

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 19970120

Year of fee payment: 9

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: THE PATENT HAS BEEN ANNULLED BY A DECISION OF A NATIONAL AUTHORITY

Effective date: 19980228

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 19980201

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 19990225

Year of fee payment: 11

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20000901

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 20000901

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20010205

Year of fee payment: 13

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20020903