EP0186528B1 - Magnetisches Granatmaterial, magnetische Schicht mit starker Faraday-Rotation, welche solches Material enthält und Verfahren zu seiner Herstellung - Google Patents
Magnetisches Granatmaterial, magnetische Schicht mit starker Faraday-Rotation, welche solches Material enthält und Verfahren zu seiner Herstellung Download PDFInfo
- Publication number
- EP0186528B1 EP0186528B1 EP85402075A EP85402075A EP0186528B1 EP 0186528 B1 EP0186528 B1 EP 0186528B1 EP 85402075 A EP85402075 A EP 85402075A EP 85402075 A EP85402075 A EP 85402075A EP 0186528 B1 EP0186528 B1 EP 0186528B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- magnetic
- oxide
- magnetic material
- film
- accordance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 30
- 239000000463 material Substances 0.000 title claims description 14
- 239000002223 garnet Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000696 magnetic material Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 238000000407 epitaxy Methods 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 9
- 229910052775 Thulium Inorganic materials 0.000 claims description 8
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 claims description 8
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 229910001938 gadolinium oxide Inorganic materials 0.000 claims description 3
- 229940075613 gadolinium oxide Drugs 0.000 claims description 3
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 claims description 3
- 229910003447 praseodymium oxide Inorganic materials 0.000 claims description 3
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- 229910052810 boron oxide Inorganic materials 0.000 claims description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 229910000464 lead oxide Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
- 238000004943 liquid phase epitaxy Methods 0.000 claims 1
- 230000005415 magnetization Effects 0.000 description 14
- 229910052777 Praseodymium Inorganic materials 0.000 description 8
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 8
- 229910052797 bismuth Inorganic materials 0.000 description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000005421 thermomagnetic effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium (III) oxide Inorganic materials [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002505 iron Chemical class 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910002637 Pr6O11 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005293 ferrimagnetic effect Effects 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
- H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
- H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
Definitions
- the subject of the present invention is a magnetic material of the garnet type, a Faraday magnetic film with high rotation comprising such a material and its manufacturing process.
- the principle of such devices is to obtain a light contrast by using the Faraday effect induced on a monochromatic light when passing through a magnetic material.
- a transparent monocrystalline substrate is used on which is deposited a thin monocrystalline layer of ferrimagnetic garnet in which the magnetization is normal to the plane, this layer is subdivided by etching into magnetic elementary cells whose magnetization can be oriented in a one way or the other.
- These cells can thus be viewed in polarized light thanks to the Faraday effect: cells oriented in one direction will thus appear in clear, while cells oriented in the other direction will appear in dark.
- this result is obtained by magnetic effect by selectively activating, in the presence of a polarization field, thin conductors deposited on the magnetic layer in two independent and perpendicular networks, surrounding the elementary magnetic cells.
- the magnetic material used to produce the film must have very precise characteristics, but these are different depending on whether the thermomagnetic effect or the magnetic effect is used.
- the reversal of the direction of magnetization is obtained by the application of a polarization field associated with a localized heating pulse on certain cells. Therefore, the material must have a compensation temperature close to ambient temperature so that the action of the applied external field is zero on the unheated cells, which occurs when one is in the vicinity of the compensation temperature. where the result of the magnetizations of the garnet sub-networks cancels out and nullifies the action of an external field.
- the magnetic cells which will have been brought to a higher temperature, will see their magnetization align in the direction of the field applied simultaneously and one will thus obtain the reversal of the direction of the magnetization.
- Magnetic garnets capable of meeting these characteristics correspond to composition (GdBi) 3 (FeGaAI) 5 0 12 .
- the switching of these is done using currents flowing in crossed conductors in the presence of a polarization field.
- the magnetic material used must have characteristics very different from those of materials using the thermomagnetic effect. In fact, this material must not have a compensation temperature close to ambient temperature, but it must have a low magnetization and a low anisotropy.
- the use of the second technique proves to be particularly advantageous since it makes it possible to obtain much more quickly the reversal of the direction of magnetization of the magnetic cells, which constitutes an important advantage, in particular in display devices.
- the present invention specifically relates to magnetic materials with high Faraday rotation, therefore with a high proportion of bismuth, capable of being used in devices using this second technique for switching magnetic cells.
- the magnetic material according to the invention is characterized in that it corresponds to the formula: in which M represents either one or more rare earth elements chosen from lutetium, thulium and ytterbium, or yttrium, and xi, x 2 , y 1 and y 2 are such that: provided that y i and y 2 are not both equal to 0 and that y i + y 2 is at most equal to 1.
- the magnetic material of the invention is thus a garnet of the Gd 2 Bii Fe 5 Oi 2 type in which part of the gadolinium has been replaced, on the one hand, by at least one element of the rare earths belonging to the lutetium group, thulium, ytterbium or by yttrium, and, on the other hand, by praseodymium, and in which part of the iron has been replaced by a non-magnetic element such as gallium and / or aluminum.
- the presence either of at least one element of rare earths belonging to the group of lutetium, thulium, ytterbium, or of yttrium makes it possible to reduce the compensation temperature below the ambient temperature;
- the presence of gallium and / or aluminum makes it possible to adjust the magnetization;
- the presence of praseodymium makes it possible to adjust the uniaxial magnetic anisotropy field of the material to any value between 0 and 2 ⁇ 10 5 ⁇ A ⁇ m -1 , while retaining the optimized magneto-optical properties of the material due in particular to the presence of bismuth, gallium and / or aluminum, and one or more rare earths chosen from Lu, Tm, Yb or Y.
- a single element of rare earths for example thulium, is used to decrease the compensation temperature.
- rare earth elements chosen from Lu, Tm, Yb or Y
- their respective contents (in atoms) in the material are such that the sum of these contents corresponds to x i .
- a single element is generally used to adjust the magnetization. This can in particular be gallium, y 2 being equal to 0 in the formula given above.
- Magnetic materials of this type can be obtained by epitaxy on a substrate. This makes it possible to obtain magnetic films with high Faraday rotation constituted by a thin monocrystalline layer of a magnetic material corresponding to the formula given above and by its non-magnetic monocrystalline substrate.
- the substrate used for the epitaxy has practically the same crystal lattice constant as the magnetic material to be deposited.
- the conventional technique for the deposition by epitaxy in the liquid phase of the layer, the conventional technique is used which consists in preparing an epitaxy bath from the oxides of the various constituents of the layer to be deposited, ie a bath containing gadolinium oxide, praseodymium oxide, at least one oxide of a metal M, bismuth oxide, iron oxide, gallium oxide and / or aluminum oxide and use is made a solvent for dissolving these different oxides.
- This solvent can in particular be a mixture of lead oxide and boron oxide.
- the quantities of the various oxides are such that they correspond to the composition of the layer which it is desired to deposit.
- a substrate is then introduced into the bath by driving it in rotation and the deposition temperature Td is adjusted as a function of the saturation temperature Ts of the bath, in order to obtain the growth of a monocrystalline layer of desired composition.
- the deposition temperature is generally 10 to 30 ° C lower than the saturation temperature.
- the crucible is then introduced into an oven at 1000 ° C for several hours to melt the mixture, then it is subjected to stirring using a platinum stirrer and the temperature of the mixture is brought back to 950 ° C.
- the stirring is continued mechanical for 4 h and after removing the agitator, the temperature of the bath is brought down as quickly as possible to 800 ° C.
- a polished substrate is then introduced into the bath, of composition (Gd Ca) 3 (Ga Mg Zr) s O 12 oriented (111) having a diameter of 5.08 cm and a thickness of 500 ⁇ m, by dipping it horizontally in the bath and subjecting it to a rotational movement of 80 revolutions / minute.
- the substrate-magnetic layer assembly is extracted from the bath without rotation, then it is subjected to an accelerated rotational movement up to 900 rpm to eject the remainder of the solvent by centrifugation, and it is taken out finally from the oven.
- the epitaxial layer corresponds to the composition Bi 1 Gd 1.4 Tm 0.4 Pr 0.2 Fe 4.5 Ga 0.5 O 12 and its magnetic characteristics are given in the attached table. It also has a Faraday ⁇ f rotation of 1,750,000 ° / m measured at a wavelength of 632.8nm and an absorption a of 100,000 / m at this same wavelength.
- the anisotropy constant Ku was determined from the following formula: in which H k represents the uniaxial anisotropy field and M s the saturation magnetic induction, in order to take account of the value of the saturation magnetic induction which can vary from one film to another.
- the anisotropy constant of the film decreases sharply when the praseodymium content of the bath is increased and consequently the praseodymium content of the film.
- the films obtained all have a Faraday rotation measured at 6328 A (632.8 nm) of approximately 17500 ° / cm.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compounds Of Iron (AREA)
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8416763 | 1984-11-02 | ||
FR8416763A FR2572844B1 (fr) | 1984-11-02 | 1984-11-02 | Materiau magnetique du type grenat, film magnetique a forte rotation faraday comportant un tel materiau et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0186528A1 EP0186528A1 (de) | 1986-07-02 |
EP0186528B1 true EP0186528B1 (de) | 1989-03-22 |
Family
ID=9309230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP85402075A Expired EP0186528B1 (de) | 1984-11-02 | 1985-10-25 | Magnetisches Granatmaterial, magnetische Schicht mit starker Faraday-Rotation, welche solches Material enthält und Verfahren zu seiner Herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US4698281A (de) |
EP (1) | EP0186528B1 (de) |
JP (1) | JPS61110408A (de) |
DE (1) | DE3569059D1 (de) |
FR (1) | FR2572844B1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5043231A (en) * | 1988-11-04 | 1991-08-27 | National Institute For Research In Inorganic Materials | Gadolinium-lutetium-gallium garnet crystal, process for its production and substrate for magneto-optical device made thereof |
JPH0782164B2 (ja) * | 1991-04-25 | 1995-09-06 | 松下電器産業株式会社 | 磁気光学素子及び磁界測定装置 |
EP0522388A1 (de) * | 1991-07-01 | 1993-01-13 | Murata Manufacturing Co., Ltd. | Geräte für magnetostatische Wellen |
WO1995016269A1 (fr) * | 1993-12-06 | 1995-06-15 | Kirbitov, Viktor Mikhailovich | Materiau ferromagnetique et son procede de production |
US5925474A (en) * | 1996-10-14 | 1999-07-20 | Mitsubishi Gas Chemical Company, Inc. | Bismuth-substituted rare earth iron garnet single crystal film |
JP3649935B2 (ja) * | 1999-03-15 | 2005-05-18 | Tdk株式会社 | 磁性ガーネット材料およびそれを用いたファラデー回転子 |
US7268946B2 (en) * | 2003-02-10 | 2007-09-11 | Jian Wang | Universal broadband polarizer, devices incorporating same, and method of making same |
JP5459243B2 (ja) * | 2011-03-08 | 2014-04-02 | 住友金属鉱山株式会社 | ビスマス置換型希土類鉄ガーネット結晶膜と光アイソレータ |
CN113860367B (zh) * | 2021-10-18 | 2023-03-28 | 安徽工业大学 | 一种氧化镨/氧化铋/镨酸铋复合纳米片及其合成方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5225000B2 (de) * | 1972-08-11 | 1977-07-05 | ||
JPS49129700A (de) * | 1973-04-18 | 1974-12-12 | ||
CA1050862A (en) * | 1973-10-04 | 1979-03-20 | Richard E. Novak | Magnetic bubble devices and garnet films therefor |
US3949386A (en) * | 1973-11-12 | 1976-04-06 | International Business Machines Corporation | Bubble domain devices using garnet materials with single rare earth ion on all dodecahedral sites |
JPS6011450B2 (ja) * | 1976-10-08 | 1985-03-26 | 株式会社日立製作所 | 泡磁区素子用ガ−ネツト単結晶膜 |
FR2469477A1 (fr) * | 1979-11-09 | 1981-05-22 | Rhone Poulenc Ind | Procede de fabrication de grenat polycristallin, grenat polycristallin et monocristal correspondant |
FR2469478A1 (fr) * | 1979-11-09 | 1981-05-22 | Rhone Poulenc Ind | Procede de fabrication de grenat polycristallin comportant l'aluminium et/ou le gallium et/ou l'indium et au moins un element pris dans le groupe constitue par les terres rares et l'yttrium, monocristaux correspondants |
NL8004201A (nl) * | 1980-07-22 | 1982-02-16 | Philips Nv | Inrichting voor de voortbeweging van magnetische domeinen. |
US4647514A (en) * | 1981-11-09 | 1987-03-03 | At&T Bell Laboratories | Magnetic domain device having a wide operational temperature range |
JPS58153309A (ja) * | 1982-03-05 | 1983-09-12 | Hitachi Ltd | イオン打込み素子用ガ−ネツト膜 |
US4433034A (en) * | 1982-04-12 | 1984-02-21 | Allied Corporation | Magnetic bubble layer of thulium-containing garnet |
JPS5972707A (ja) * | 1982-10-20 | 1984-04-24 | Hitachi Ltd | 磁性ガーネット膜 |
-
1984
- 1984-11-02 FR FR8416763A patent/FR2572844B1/fr not_active Expired
-
1985
- 1985-10-15 US US06/787,062 patent/US4698281A/en not_active Expired - Fee Related
- 1985-10-25 DE DE8585402075T patent/DE3569059D1/de not_active Expired
- 1985-10-25 EP EP85402075A patent/EP0186528B1/de not_active Expired
- 1985-10-29 JP JP60240683A patent/JPS61110408A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4698281A (en) | 1987-10-06 |
EP0186528A1 (de) | 1986-07-02 |
FR2572844B1 (fr) | 1986-12-26 |
FR2572844A1 (fr) | 1986-05-09 |
JPS61110408A (ja) | 1986-05-28 |
DE3569059D1 (en) | 1989-04-27 |
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