EP0162842A1 - Systeme de distribution de gaz pour cathodes de pulverisation - Google Patents

Systeme de distribution de gaz pour cathodes de pulverisation

Info

Publication number
EP0162842A1
EP0162842A1 EP19840900219 EP84900219A EP0162842A1 EP 0162842 A1 EP0162842 A1 EP 0162842A1 EP 19840900219 EP19840900219 EP 19840900219 EP 84900219 A EP84900219 A EP 84900219A EP 0162842 A1 EP0162842 A1 EP 0162842A1
Authority
EP
European Patent Office
Prior art keywords
gas
target
chamber
distribution system
gases
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19840900219
Other languages
German (de)
English (en)
Inventor
Merrill G. Robinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shatterproof Glass Corp
Original Assignee
Shatterproof Glass Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shatterproof Glass Corp filed Critical Shatterproof Glass Corp
Publication of EP0162842A1 publication Critical patent/EP0162842A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Definitions

  • the present invention is concerned with the art of sputtering and in particular with the reactive ⁇ athodic sputtering of metals or metal alloys on the surface of substrates in an evacuable coating chamber.
  • One method of sputter-coating involves ion bombarding a target of the coating material in an ionized gas atmosphere in a chamber in which a controlled vacuum is maintained to cause atomic particles of the coating material to be dislodged and deposited by condensation on the substrates to be coated.
  • the gas employed is a non-reactive or inert gas, such as argon.
  • many processes in vacuum deposition utilize a method known as reactive deposition where a pure metal or alloy target material is liberated from its bulk and directed toward a substrate which is intended to collect the material as or after it has reacted with a gas which is present in the path of the liberated target material or at the substrate surface.
  • the reactive sputtering is often difficult to control, rates of deposition are erratic, arcing of the target occurs due to resistive film build up on the target face, and yields are often unpredictable.
  • the gas distribution system of this invention consists in simultaneously introducing into the coating chamber after it has been pumped down a non-reactive gas, such as argon, and a reactive gas, such as nitrogen or oxygen, and maintaining them substantially separate from one another, the non-reactive gas being directed toward and upon the target surface and serving to protect said surface from the reactive gas which is directed toward and upon the substrate surface.
  • a non-reactive gas such as argon
  • a reactive gas such as nitrogen or oxygen
  • Fig. 1 is a cross section of a sputtering cathode with which the present invention in employed
  • Fig. 2 is a side view of the apparatus taken substantially on line 2—2 of Fig. 1,
  • Fig. 3 is a plan view of the cathode with the cover plate removed
  • Fig. 4 is an enlarged section of the gas distribution means of this invention.
  • Fig. 5 is a view similar to Fig. 1 but showing another form of the invention
  • Fig. 6 is a perspective view of the gas distribution means shown in Fig. 5, and Fig. 7 is a detail section taken substantially on line 7—7 of Fig. 6.
  • _or p j_ sputtering apparatus includes an evacuable coating chamber 10 in which is mounted a planar sputtering cathode 11.
  • the coating chamber is usually part of a continuous sputtering apparatus through which planar substrates 12, such as glass sheets or the like, are supported horizontally upon and carried by conveyor rolls 13 beneath cathode 12 to receive the coating material sputtered therefrom.
  • the cathode 11 comprises a housing of substantially rectangular boxlike form composed of a bottom wall or, base plate 14, side walls 15 and 16, end walls 17 and 18 and a top or cover plate 19 which define a chamber 20.
  • a sheet or layer 21 of the material to be sputtered onto the substrates and which is generally referred to as the target.
  • the base plate 14 of the cathode housing is secured to the side and end walls 15-16 and 17-18 respectively by screws 22 which pass upwardly therethrough and are threaded into elongated metal strips 23 welded or otherwise suitably secured to the said side and end walls.
  • Pressure tight seals 24 are provided between the base plate and the side and end walls, while arranged outwardly of said side and end walls are the insulating shields 25.
  • the side walls 15-16 and end walls 17-18 of the cathode housing terminate at their upper ends in outwardly directed flanges 26 and 27 respectively which form a continuous rim surrounding the housing for supporting the cathode in operative position.
  • the top wall 29 of coating chamber 10 is provided with a transverse opening 30 through which the cathode is lowered into said chamber where it is supported by the continuous rim which overlaps the adjacent portions of the top wall 29.
  • Strips of insulating material 31 are positioned between the top wall 29 of the coating chamber and the supporting rim, while pressure tight seals 32 and 33 are located at opposite sides of the insulating strips 31. Similar seals 34 are provided between the supporting rim and the cover plate 19 of the cathode.
  • the cathode 11 herein disclosed by way of illustration is a planar magnetron cathode and to this end magnetic means 35 are mounted in the cathode chamber 20 and supported on the base plate 14.
  • the magnetic means 35 consists of two parallel rows of substantially U-shaped permanent magnets 36 and 37, with the magnets in the two rows being alternately arranged in overlapping relation.
  • the outer legs 38 of the magnets 36 are secured to a magnetic strip 39 by screws 40, while the outer legs of the magnets 37 are secured to a similar magnetic strip 42 by screws 43.
  • the inner legs 44 and 45 of the magnets 36 and 37 are secured to a central magnetic strip 46, extending parallel with the strips 39 and 42, by screws 47 and 48 respectively.
  • the means for cooling the target are not shown as any desired means may be provided for this purpose.
  • the electrical means for operating the cathode are not shown since the operation of magnetron cathodes is well know .
  • an inert gas such as argon
  • argon is usually admitted to the vacuum chamber 10 to provide a non-reactive gas atmosphere after the chamber has been pumped down to the desired pressure.
  • This pressure is usually in the neighborhood of 5 to 10 microns.
  • the argon is ionized to establish a plasma and the argon ions dislodge molecules of the material from which the target is made, these molecules then impinge upon the substrates that are moved slowly therebeneath to coat the same.
  • Such cathodes may also be employed to reactively sputter a metal oxide coating in a reactive gas atmosphere containing, for example, oxygen or nitrogen.
  • the purpose of this invention is to provide a reactive sputtering apparatus which can be operated with greater efficiency and improved results than heretofore.
  • a novel gas distribution system in which an inert gas, such as argon, is directed toward and into contact with the target, while a reactive gas, such as oxygen or nitrogen, is simultaneiously directed toward and into contact with the substrate to be coated and in which the two gases are maintained substantially separated from one another. This allows the target to function as it would in a totally non-reactive environment, while the material liberated from the target and directed toward the substrate will be acted upon by the reactive gas in its path of movement or at the surface of the substrate as it would in a reactive environment.
  • a gas distribution system including metallic support members 49 and 50 in the form of elongated substantially rectangular beams horizontally mounted in the coating chamber 10 at opposite sides ' of the cathode 11.
  • Each support member is made up of three parallel sections 51, 52, and 53 positioned in contacting relation one above the other and secured together by screws 54.
  • the meeting faces of the sections 51 and 52 of each support member 49 and 50 are provided with semi-circular grooves 60 and 61 respectvely which together form an annular opening extending longitudinally of said support member and in which is mounted a pipe 62 formed of a suitable porous material.
  • the meeting faces of the support sections 52 and 53 are provided with similar semi-circular grooves 63 and 64 in which is mounted a pipe 65 also of porous material.
  • the porous pipes 62 at opposite sides of the cathode are closed at one end as at 162 while, at their opposite ends, they are joined to pipes 163 that extend inwardly and are connected to a gas inlet pipe 67.
  • the porous pipes 65 at opposite sides of the cathode are closed at one end as at 165 and connected at their opposite ends to a gas inlet pipe 68.
  • the porous pipe 62 is adapted to receive a non-reactive gas, such as
  • the meeting faces of the sections 51 and 52 of each support member 49 and 50, inwardly of the porous pipe 62, are slanted upwardly and inwardly as at 69 and 70 and spaced slightly from one another to provide a slit 71 (Fig. 4) through which the non-reactive or inert gas escaping through the porous pipe 62 will be directed toward and upon the target 21.
  • the meeting faces of the sections 52 and 53 of each support member inwardly of the porous pipe 65 slant inwardly and downwardly as at 72 and 73 and are spaced slightly from one another to provide a slit 74 through which the reactive gas escaping through the porous pipe 65 will be directed toward and upon the substrate 12.
  • the target face will be shielded from the reactive gas by the layer of non-reactive gas which is next to the target.
  • the sputtering from the target face takes place in a non-reactive gas atmosphere, while the reaction desired takes place in a reactive gas atmosphere at or adjacent to the substrate.
  • the coating chamber is first pumped down to the desired pressure and an inert gas, such as argon, introduced into the upper portion thereof through the porous pipes 62.
  • the reactive gas such as oxygen or nitrogen
  • the gas introduced into the upper portion of the chamber is usually 100% inert gas, such as argon, while the gas introduced into the lower portion of the chamber is not necessarily 100% reactive gas.
  • This gas may be a mixture of argon and oxygen or nitrogen; for example 80% oxygen or nitrogen and 20% argon.
  • the presence of the argon gas above the reactive gas will prevent the reactive gas from passing upwardly into contact with the target face.
  • the target may be formed of a pure metal such as titanium or tantalum. When the reactive gas used is oxygen and the molecules of titanium or tantalum are sputtered from the target they will be converted into titanium oxide -1-
  • set screws 75 and 76 are threaded through the top and bottom sections 51 and 53 of each support member 49 and 50 and are received within openings 97 and 98 in the central section 52. Upon rotation of the set screws, the meeting faces 69-70 and 72-73 can be sprung slightly toward or away from one another to increase or decrease the width of the slits and thus regulate the amount of gas passing therethrough.
  • Figs. 5 to 7 is illustrated an alternate form of gas distribution system embodying the basic feature of the invention as described above.
  • Fig. 5 is the same as in Figs. 1 to 3 so that like numerals have been used to designate like parts.
  • the gas distribution system herein disclosed comprises a rectangular frame 97 which encircles the lower portion of the cathode 11 within vacuum chamber 10 and is secured to the underside of the top wall 29 of said chamber by brackets 98.
  • the frame is composed of upper and lower horizontal tubular side members 79 and 80 integral with the tubular end members 81 and 82.
  • the upper and lower side and end members are joined together by the side and end metal plate members 83 and 84 respectively.
  • the gases are introduced into the upper and lower tubular side members 79 and 80 through feed pipes 85 and 86 and exit therefrom and from the end members 81 and 82 through aperatures 87 and 88 respectively.
  • the openings 87 in the upper tubular members are positioned to direct an inert gas upwardly and inwardly toward the target 21, while the openings 88 in the lower tubular members are positioned to direct a re-active gas, or a mixture of inert and reactive gases, downwardly and inwardly toward the substrate 12 as explained above.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Système de distribution de gaz destiné à être utilisé avec une cathode de pulvérisation (11), montée dans une chambre sous vide (10) et possédant une cible sensiblement plane (21) composée du matériau devant être pulvérisé sur des substrats sensiblement plans (12) situés au-dessous. Le système se caractérise par le fait qu'un organe distributeur est situé de chaque côté de la cathode pour introduire deux gaz séparés dans la chambre sous vide entre la cible et les substrats, l'organe distributeur comprenant un organe de support (49, 50), une paire de conduites poreuses horizontales (62, 65) disposées dans l'organe de support, et des orifices de sortie (71, 74) dans l'organe de support, au travers desquels les gaz s'échappent des conduites poreuses dans la chambre sous vide et sont dirigés dans des directions divergentes, l'une vers la cible et l'autre vers les substrats. Est également décrit un procédé de pulvérisation utilisant ce système de distribution de gaz, dans lequel le gaz dirigé contre la partie supérieure de la chambre (10) est un gaz inerte tandis que le gaz dirigé contre la partie inférieure de la chambre est un gaz réactif.
EP19840900219 1983-12-01 1983-12-01 Systeme de distribution de gaz pour cathodes de pulverisation Withdrawn EP0162842A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1983/001883 WO1985002418A1 (fr) 1983-12-01 1983-12-01 Systeme de distribution de gaz pour cathodes de pulverisation

Publications (1)

Publication Number Publication Date
EP0162842A1 true EP0162842A1 (fr) 1985-12-04

Family

ID=22175611

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19840900219 Withdrawn EP0162842A1 (fr) 1983-12-01 1983-12-01 Systeme de distribution de gaz pour cathodes de pulverisation

Country Status (2)

Country Link
EP (1) EP0162842A1 (fr)
WO (1) WO1985002418A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4006411C2 (de) * 1990-03-01 1997-05-28 Leybold Ag Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat
BE1004442A3 (fr) * 1990-06-08 1992-11-24 Saint Roch Glaceries Installation de pulverisation cathodique a taux eleve.
EP1086482A1 (fr) * 1998-06-12 2001-03-28 Applied Materials, Inc. Unite de repartition de gaz

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1419496A (en) * 1971-12-29 1975-12-31 Lucas Industries Ltd Sputtering apparatus
LU71343A1 (fr) * 1974-11-22 1976-03-17
FR2397067A1 (fr) * 1977-07-06 1979-02-02 Commissariat Energie Atomique Dispositif d'injection de gaz pour gravure ou depot reactifs sous decharge luminescente
IT1134153B (it) * 1979-11-21 1986-07-31 Siv Soc Italiana Vetro Ugello per depositare in continuo su un substrato uno strato di una materia solida
CA1155798A (fr) * 1981-03-30 1983-10-25 Shmuel Maniv Methode et dispositif de deposition par reaction

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO8502418A1 *

Also Published As

Publication number Publication date
WO1985002418A1 (fr) 1985-06-06

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Inventor name: ROBINSON, MERRILL, G.