CA2089645C - Methode pour ameliorer le rendement d'une cible de pulverisation par magnetron - Google Patents
Methode pour ameliorer le rendement d'une cible de pulverisation par magnetronInfo
- Publication number
- CA2089645C CA2089645C CA 2089645 CA2089645A CA2089645C CA 2089645 C CA2089645 C CA 2089645C CA 2089645 CA2089645 CA 2089645 CA 2089645 A CA2089645 A CA 2089645A CA 2089645 C CA2089645 C CA 2089645C
- Authority
- CA
- Canada
- Prior art keywords
- target
- sputtering
- region
- over
- electromagnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Champ magnétique (202, 302), permettant de confiner le plasma, généré dans une zone de pulvérisation (105, 106) d'une cible de pulvérisation (40) avec une ligne de champ critique (202b, 302b) qui détermine la forme du plasma (204, 304). La ligne de champ critique est progressivement aplanie pendant la durée de vie de la cible au fur et à mesure qu'elle s'érode. L'aimant (51, 52) comprend de préférence des pôles (57, 61, 65) espacés autour de la partie de la cible située sous la zone de pulvérisation afin de créer un champ magnétique qui s'aplatit au fur et à mesure qu'il perd de son intensité. L'alimentation stabilisée (122) maintient un niveau stable qui est augmenté au fur et à mesure que la cible s'érode afin de conserver un taux de dépôt constant. La tension de l'alimentation électrique est maintenue à une valeur égale ou supérieure à un niveau constant en diminuant progressivement le courant qui alimente un électro-aimant (52, 54) afin de réduire progressivement l'intensité du champ et de l'aplatir. La présente invention permet d'élargir le sillon de la cible et d'accroître la quantité de plaquettes enduites par la cible durant sa durée de vie.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US57556190A | 1990-08-29 | 1990-08-29 | |
US575,561 | 1990-08-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2089645A1 CA2089645A1 (fr) | 1992-03-01 |
CA2089645C true CA2089645C (fr) | 1998-05-05 |
Family
ID=24300807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA 2089645 Expired - Fee Related CA2089645C (fr) | 1990-08-29 | 1991-08-22 | Methode pour ameliorer le rendement d'une cible de pulverisation par magnetron |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0546052A1 (fr) |
JP (1) | JP3315113B2 (fr) |
AU (1) | AU8509491A (fr) |
CA (1) | CA2089645C (fr) |
SG (1) | SG50485A1 (fr) |
WO (1) | WO1992004483A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE9310565U1 (de) * | 1993-07-15 | 1993-10-14 | Balzers Hochvakuum | Target für Kathodenzerstäubungsanlagen |
DE59400046D1 (de) * | 1994-04-07 | 1995-12-21 | Balzers Hochvakuum | Magnetronzerstäubungsquelle und deren Verwendung. |
WO2008107705A1 (fr) * | 2007-03-02 | 2008-09-12 | Nordiko Technical Services Limited | Appareil |
GB201713385D0 (en) * | 2017-08-21 | 2017-10-04 | Gencoa Ltd | Ion-enhanced deposition |
JP2022505534A (ja) * | 2018-10-24 | 2022-01-14 | エヴァテック・アーゲー | 液体スパッタターゲット |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4500409A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Magnetron sputter coating source for both magnetic and non magnetic target materials |
EP0162643B1 (fr) * | 1984-05-17 | 1989-04-12 | Varian Associates, Inc. | Source pour revêtement par pulvérisation ayant plusieurs cibles annulaires |
US4842703A (en) * | 1988-02-23 | 1989-06-27 | Eaton Corporation | Magnetron cathode and method for sputter coating |
-
1991
- 1991-08-22 JP JP51512291A patent/JP3315113B2/ja not_active Expired - Lifetime
- 1991-08-22 EP EP19910916025 patent/EP0546052A1/fr not_active Withdrawn
- 1991-08-22 WO PCT/US1991/006000 patent/WO1992004483A1/fr not_active Application Discontinuation
- 1991-08-22 AU AU85094/91A patent/AU8509491A/en not_active Abandoned
- 1991-08-22 CA CA 2089645 patent/CA2089645C/fr not_active Expired - Fee Related
- 1991-08-22 SG SG1996002612A patent/SG50485A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO1992004483A1 (fr) | 1992-03-19 |
SG50485A1 (en) | 1998-07-20 |
AU8509491A (en) | 1992-03-30 |
JPH06502890A (ja) | 1994-03-31 |
EP0546052A1 (fr) | 1993-06-16 |
JP3315113B2 (ja) | 2002-08-19 |
CA2089645A1 (fr) | 1992-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |