CA2089645A1 - Methode pour ameliorer le rendement d'une cible de pulverisation par magnetron - Google Patents

Methode pour ameliorer le rendement d'une cible de pulverisation par magnetron

Info

Publication number
CA2089645A1
CA2089645A1 CA 2089645 CA2089645A CA2089645A1 CA 2089645 A1 CA2089645 A1 CA 2089645A1 CA 2089645 CA2089645 CA 2089645 CA 2089645 A CA2089645 A CA 2089645A CA 2089645 A1 CA2089645 A1 CA 2089645A1
Authority
CA
Canada
Prior art keywords
target
field
progressively
sputtering
life
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA 2089645
Other languages
English (en)
Other versions
CA2089645C (fr
Inventor
Steven D. Hurwitt
Arnold J. Aronson
Charles Van Nutt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2089645A1 publication Critical patent/CA2089645A1/fr
Application granted granted Critical
Publication of CA2089645C publication Critical patent/CA2089645C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Champ magnétique (202, 302), permettant de confiner le plasma, généré dans une zone de pulvérisation (105, 106) d'une cible de pulvérisation (40) avec une ligne de champ critique (202b, 302b) qui détermine la forme du plasma (204, 304). La ligne de champ critique est progressivement aplanie pendant la durée de vie de la cible au fur et à mesure qu'elle s'érode. L'aimant (51, 52) comprend de préférence des pôles (57, 61, 65) espacés autour de la partie de la cible située sous la zone de pulvérisation afin de créer un champ magnétique qui s'aplatit au fur et à mesure qu'il perd de son intensité. L'alimentation stabilisée (122) maintient un niveau stable qui est augmenté au fur et à mesure que la cible s'érode afin de conserver un taux de dépôt constant. La tension de l'alimentation électrique est maintenue à une valeur égale ou supérieure à un niveau constant en diminuant progressivement le courant qui alimente un électro-aimant (52, 54) afin de réduire progressivement l'intensité du champ et de l'aplatir. La présente invention permet d'élargir le sillon de la cible et d'accroître la quantité de plaquettes enduites par la cible durant sa durée de vie.
CA 2089645 1990-08-29 1991-08-22 Methode pour ameliorer le rendement d'une cible de pulverisation par magnetron Expired - Fee Related CA2089645C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57556190A 1990-08-29 1990-08-29
US575,561 1990-08-29

Publications (2)

Publication Number Publication Date
CA2089645A1 true CA2089645A1 (fr) 1992-03-01
CA2089645C CA2089645C (fr) 1998-05-05

Family

ID=24300807

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2089645 Expired - Fee Related CA2089645C (fr) 1990-08-29 1991-08-22 Methode pour ameliorer le rendement d'une cible de pulverisation par magnetron

Country Status (6)

Country Link
EP (1) EP0546052A1 (fr)
JP (1) JP3315113B2 (fr)
AU (1) AU8509491A (fr)
CA (1) CA2089645C (fr)
SG (1) SG50485A1 (fr)
WO (1) WO1992004483A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE9310565U1 (de) * 1993-07-15 1993-10-14 Balzers Hochvakuum GmbH, 65205 Wiesbaden Target für Kathodenzerstäubungsanlagen
EP0676791B1 (fr) * 1994-04-07 1995-11-15 Balzers Aktiengesellschaft Source de pulvérisation magnétron et son utilisation
WO2008107705A1 (fr) * 2007-03-02 2008-09-12 Nordiko Technical Services Limited Appareil
GB201713385D0 (en) * 2017-08-21 2017-10-04 Gencoa Ltd Ion-enhanced deposition
EP3870735B1 (fr) * 2018-10-24 2022-08-24 Evatec AG Dispositif de pulvérisation pour cible liquide

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500409A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Magnetron sputter coating source for both magnetic and non magnetic target materials
DE3569434D1 (en) * 1984-05-17 1989-05-18 Varian Associates Sputter coating source having plural target rings
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating

Also Published As

Publication number Publication date
SG50485A1 (en) 1998-07-20
WO1992004483A1 (fr) 1992-03-19
CA2089645C (fr) 1998-05-05
JPH06502890A (ja) 1994-03-31
EP0546052A1 (fr) 1993-06-16
AU8509491A (en) 1992-03-30
JP3315113B2 (ja) 2002-08-19

Similar Documents

Publication Publication Date Title
EP0051635B1 (fr) Cible à pulvérisation et appareil à décharge luminescente pour effectuer un revêtement
KR0148007B1 (ko) 반도체 웨이퍼의 스퍼터 코팅 장치 및 방법
US6296742B1 (en) Method and apparatus for magnetically enhanced sputtering
US4724058A (en) Method and apparatus for arc evaporating large area targets
US5279723A (en) Filtered cathodic arc source
US4810346A (en) Magnetron type sputtering cathode
US6497803B2 (en) Unbalanced plasma generating apparatus having cylindrical symmetry
US5174875A (en) Method of enhancing the performance of a magnetron sputtering target
US4610774A (en) Target for sputtering
US20100270144A1 (en) High Power Pulse Magnetron Sputtering For High Aspect-Ratio Features, Vias, and Trenches
EP1458006A1 (fr) Dépot continu de matériau isolant utilisant des anodes multiples connectées alternativement à des tensions positives et négatives
CA2305938A1 (fr) Methode et appareillage de depot d'arc cathodique filtre
JP2004514264A (ja) イオン供給源
US20090314631A1 (en) Magnetron With Electromagnets And Permanent Magnets
US5106470A (en) Method and device for controlling an electromagnet for a magnetron sputtering source
CA2089645A1 (fr) Methode pour ameliorer le rendement d'une cible de pulverisation par magnetron
US4597847A (en) Non-magnetic sputtering target
US4673480A (en) Magnetically enhanced sputter source
US5182001A (en) Process for coating substrates by means of a magnetron cathode
EP0197770A2 (fr) Dispositif de pulvérisation magnétron planaire à décharge de Penning
JP2003514991A (ja) 切頭円錐形スパッタリングターゲットのためのターゲット利用率の高い磁気構成
GB2255105A (en) Dual magnetron/cathodic arc vapour source
JP2902822B2 (ja) プレーナ形マグネトロンスパッタ電極
JPS6476654A (en) Lens for field emission type electron gun
Peters Internal versus external RF coupling into a volume source

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed