CA2089645A1 - Method of enhancing the performance of a magnetron sputtering target - Google Patents

Method of enhancing the performance of a magnetron sputtering target

Info

Publication number
CA2089645A1
CA2089645A1 CA 2089645 CA2089645A CA2089645A1 CA 2089645 A1 CA2089645 A1 CA 2089645A1 CA 2089645 CA2089645 CA 2089645 CA 2089645 A CA2089645 A CA 2089645A CA 2089645 A1 CA2089645 A1 CA 2089645A1
Authority
CA
Canada
Prior art keywords
target
field
progressively
sputtering
life
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA 2089645
Other languages
French (fr)
Other versions
CA2089645C (en
Inventor
Steven D. Hurwitt
Arnold J. Aronson
Charles Van Nutt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Limited
Steven D. Hurwitt
Arnold J. Aronson
Charles Van Nutt
Materials Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited, Steven D. Hurwitt, Arnold J. Aronson, Charles Van Nutt, Materials Research Corporation filed Critical Tokyo Electron Limited
Publication of CA2089645A1 publication Critical patent/CA2089645A1/en
Application granted granted Critical
Publication of CA2089645C publication Critical patent/CA2089645C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Abstract

A plasma confining magnetic field (202,302) is generated over the sputtering region (105,106) of a sputtering target (40) with a critical field line (202b,302b) which determines the shape of the plasma (204,304).
The critical field line is progressively flattened over the course of the life of the target as the target erodes.
Preferably, the magnet (51,52) is configured with poles (57,61,65) spaced around the portion of the target below the sputtering region to provide a magnetic field that flattens as its strength decreases. A regulated power supply (122), maintains a regulated power level that is increased as the target erodes to maintain a constant deposition rate. The voltage delivered by the power supply is maintained at or above a constant level by progressively decreasing the current to an electromagnet (52,54) to progressively reduce the field strength and flatten the field. As a result of the invention, the erosion groove of the target is broadened and the number of wafers coated by the target during its life is increased.
CA 2089645 1990-08-29 1991-08-22 Method of enhancing the performance of a magnetron sputtering target Expired - Fee Related CA2089645C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57556190A 1990-08-29 1990-08-29
US575,561 1990-08-29

Publications (2)

Publication Number Publication Date
CA2089645A1 true CA2089645A1 (en) 1992-03-01
CA2089645C CA2089645C (en) 1998-05-05

Family

ID=24300807

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2089645 Expired - Fee Related CA2089645C (en) 1990-08-29 1991-08-22 Method of enhancing the performance of a magnetron sputtering target

Country Status (6)

Country Link
EP (1) EP0546052A1 (en)
JP (1) JP3315113B2 (en)
AU (1) AU8509491A (en)
CA (1) CA2089645C (en)
SG (1) SG50485A1 (en)
WO (1) WO1992004483A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE9310565U1 (en) * 1993-07-15 1993-10-14 Balzers Hochvakuum Target for cathode sputtering systems
DE59400046D1 (en) * 1994-04-07 1995-12-21 Balzers Hochvakuum Magnetron sputtering source and its use.
WO2008107705A1 (en) * 2007-03-02 2008-09-12 Nordiko Technical Services Limited Apparatus
GB201713385D0 (en) * 2017-08-21 2017-10-04 Gencoa Ltd Ion-enhanced deposition
CN112912535B (en) * 2018-10-24 2023-12-05 瑞士艾发科技 Liquid sputtering target

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500409A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Magnetron sputter coating source for both magnetic and non magnetic target materials
DE3569434D1 (en) * 1984-05-17 1989-05-18 Varian Associates Sputter coating source having plural target rings
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating

Also Published As

Publication number Publication date
CA2089645C (en) 1998-05-05
SG50485A1 (en) 1998-07-20
JPH06502890A (en) 1994-03-31
EP0546052A1 (en) 1993-06-16
AU8509491A (en) 1992-03-30
JP3315113B2 (en) 2002-08-19
WO1992004483A1 (en) 1992-03-19

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Legal Events

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EEER Examination request
MKLA Lapsed