SG50485A1 - Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten cvd - Google Patents

Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten cvd

Info

Publication number
SG50485A1
SG50485A1 SG1996002612A SG1996002612A SG50485A1 SG 50485 A1 SG50485 A1 SG 50485A1 SG 1996002612 A SG1996002612 A SG 1996002612A SG 1996002612 A SG1996002612 A SG 1996002612A SG 50485 A1 SG50485 A1 SG 50485A1
Authority
SG
Singapore
Prior art keywords
semiconductor wafer
wafer processing
cluster tool
processing cluster
tool module
Prior art date
Application number
SG1996002612A
Other languages
English (en)
Inventor
Van Charles Nutt
Stephen D Hurwitt
Arnold J Aronson
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Publication of SG50485A1 publication Critical patent/SG50485A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SG1996002612A 1990-08-29 1991-08-22 Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten cvd SG50485A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57556190A 1990-08-29 1990-08-29

Publications (1)

Publication Number Publication Date
SG50485A1 true SG50485A1 (en) 1998-07-20

Family

ID=24300807

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996002612A SG50485A1 (en) 1990-08-29 1991-08-22 Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten cvd

Country Status (6)

Country Link
EP (1) EP0546052A1 (fr)
JP (1) JP3315113B2 (fr)
AU (1) AU8509491A (fr)
CA (1) CA2089645C (fr)
SG (1) SG50485A1 (fr)
WO (1) WO1992004483A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE9310565U1 (de) * 1993-07-15 1993-10-14 Balzers Hochvakuum GmbH, 65205 Wiesbaden Target für Kathodenzerstäubungsanlagen
ATE130465T1 (de) * 1994-04-07 1995-12-15 Balzers Hochvakuum Magnetronzerstäubungsquelle und deren verwendung.
EP2143125B1 (fr) * 2007-03-02 2016-11-30 Nordiko Technical Services Limited Source d'ions
GB201713385D0 (en) * 2017-08-21 2017-10-04 Gencoa Ltd Ion-enhanced deposition
JP2022505534A (ja) * 2018-10-24 2022-01-14 エヴァテック・アーゲー 液体スパッタターゲット

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500409A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Magnetron sputter coating source for both magnetic and non magnetic target materials
EP0162643B1 (fr) * 1984-05-17 1989-04-12 Varian Associates, Inc. Source pour revêtement par pulvérisation ayant plusieurs cibles annulaires
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating

Also Published As

Publication number Publication date
CA2089645A1 (fr) 1992-03-01
JP3315113B2 (ja) 2002-08-19
JPH06502890A (ja) 1994-03-31
WO1992004483A1 (fr) 1992-03-19
CA2089645C (fr) 1998-05-05
AU8509491A (en) 1992-03-30
EP0546052A1 (fr) 1993-06-16

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