EP0154583A1 - Flossenleitungsschalter und Begrenzer im Mikrowellenbereich - Google Patents

Flossenleitungsschalter und Begrenzer im Mikrowellenbereich Download PDF

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Publication number
EP0154583A1
EP0154583A1 EP85400294A EP85400294A EP0154583A1 EP 0154583 A1 EP0154583 A1 EP 0154583A1 EP 85400294 A EP85400294 A EP 85400294A EP 85400294 A EP85400294 A EP 85400294A EP 0154583 A1 EP0154583 A1 EP 0154583A1
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EP
European Patent Office
Prior art keywords
diode
section
strip
compensation
line
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP85400294A
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English (en)
French (fr)
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EP0154583B1 (de
Inventor
Ronald Funck
Jean Stevance
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Thales SA
Original Assignee
Thomson CSF SA
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Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of EP0154583A1 publication Critical patent/EP0154583A1/de
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Publication of EP0154583B1 publication Critical patent/EP0154583B1/de
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices

Definitions

  • the present invention relates to a slitting line switching and limiting device, operating at microwave frequencies.
  • This device operates in different modes, depending on whether the diode or diodes which are part of it are polarized in direct or reverse. Depending on the operating mode, this device attenuates the input microwave signal partially (limiter) or totally (switch).
  • the invention essentially relates to the compensation circuit for the reactive elements associated with each diode, that is to say its stray resistance, its self connected to the connections and its capacity in reverse polarization.
  • the slotted lines also known by the English name of end-line or slot-line, consist of two metallizations deposited on an insulating substrate such as quartz, alumina or a plastic substrate which leave between them a slit of 100 to 200 microns in width: this circuit behaves, in the range of 18 to 200 GHz for example, like a waveguide.
  • insulating substrate such as quartz, alumina or a plastic substrate which leave between them a slit of 100 to 200 microns in width: this circuit behaves, in the range of 18 to 200 GHz for example, like a waveguide.
  • Different ways of mounting one or more diodes make it possible to make such a circuit either an attenuator or switch or a limiter.
  • the diodes used are generally PIN or Schottky diodes and they are connected either by beams (lead-lead) or by wire: these connections present, in microwave, a self which has a preponderant influence on the characteristics of the circuit.
  • the object of the invention is to compensate for this parasitic self by a tuning or compensation circuit which takes into account the reactive elements associated with each diode. Compensation is obtained by a coplanar line circuit, in series with the diode mounted in parallel between the two strips of the slotted line, this circuit being composed of at least one section of coplanar line of adjustable length.
  • the circuit comprises two line sections per diode, at the rate of one section for each connection of the diode, and in addition a section can be opened, that is to say isolated from the band with which it is neighboring, which makes it possible to polarize the diode by an independent voltage.
  • the invention relates to a slitting line switching and limiting device, operating at microwave frequencies, comprising, supported by a substrate, two metallized strips defining between them a slot, and at least one diode, mounted in parallel between the two strips, this diode having, in addition to its resistance R and its junction capacity C, a self L due to the connections, this device being characterized in that, with a view to compensating for the impedance of the self L at high frequency, it includes a compensation element, consisting of at least one metal section, coplanar with the slotted line, connected in series with the diode and adjustable in length, this metal section falling within a range formed in a strip from which it is separated by at least two non-metallized bands.
  • Figure 1 very schematically shows the mounting of a slit or end-line circuit. It comprises, placed inside a box provided with the appropriate connections, a substrate made of dielectric materials 1 (quartz, alumina) on which are deposited two metal strips 2 and 3 leaving between them a slot 4.
  • the ends of the metallizations have two impedance adaptations 5 and 6 which constitute the transition zones between the external circuit and the slit circuit.
  • One or more diodes 7 are connected in bridge between the two metallizations 2 and 3.
  • one of the metallizations, 3 in this figure is insulated so as to be able to bring a DC bias voltage .
  • this same metallization is grounded by choosing the thickness of the wall of the guide equal to a d / 4, A d being the wavelength in the dielectric medium considered.
  • the width of the slit is between 100 and 200 microns.
  • the assembly should be as short as possible.
  • the length of the slot 4 is of the order of 5 mm or less and the two transition regions of the order of approximately 12 mm, or less.
  • the basic circuit consists of one or more diodes in parallel on the slit line as shown in Figure 1.
  • These diodes can be mounted in beam-lead type, that is that is to say with beams welded flat: their capacity of the order of 0.02 pF allows them to work up to very high frequencies, 200 GHz for example. They can also be of the conventional type, with a patch connected by a thermocompressed wire: their capacity is then greater than or equal to 0.1 pF, and they can only work at lower frequencies, depending on the capacity of the diode, that is to say around 18 GHz.
  • the diodes which can be used are PIN diodes or Schottky diodes, but the PIN diodes, especially at very high frequencies, must be considered as perfect diodes, having a low capacity in reverse bias and a low resistance in forward bias, associated with a choke.
  • L for serial connection i.e. the choke of the beam-lead beam or that of the wire connection.
  • FIG. 2 This is represented by FIG. 2 in which a diode D is represented by its conventional acronym in series with a choke L S which is constituted by the connection wire. If the diode is forward biased, its impedance is equal to the sum of the resistance R d of the diode in the passing direction, and of the self L S. If the diode is reverse biased, its impedance is then equal to the sum of the resistance R i plus the junction capacitance C of the reverse biased diode, in series with the self L S of the connections.
  • the invention relates to a particularly simple way of achieving this compensation in slit type circuits, this compensation being very easily adjustable to tune the circuits to the desired frequency.
  • the switch is open, that is to say that there is isolation, when the diode or diodes are polarized directly.
  • the switch is on, that is to say that there are only small insertion losses, when the diode or diodes are reverse biased.
  • This operating mode is compatible with operation as a passive limiter.
  • the increase in the input signal power causes an injection of carriers into the diodes therefore an increase in losses, hence a limitation of the output power.
  • mode 2 of operation which is the reverse of the previous mode
  • the switch is open, that is to say that there is isolation, when the diodes are reverse biased.
  • the switch is on, that is to say that there are only small losses, when the diodes are polarized in direct.
  • This mode is incompatible with operation as a passive limiter.
  • mode 1 mode 1
  • mode 2 mode 2
  • FIG. 3 represents the circuit diagram for compensating a series diode in a slotted line according to the known art.
  • This figure 3 comprises on its left part the diagram of the diode mounted in the slot and on its right part the electrical diagram equivalent to the assembly on the left.
  • the method according to the invention is represented by the equivalence diagrams of the compensation arrangement of a parallel diode in a slotted line, in FIGS. 4 and 5. These figures include in their left part the arrangement of the diode such that it is realized and in their right parts the equivalences in mode 1 for figure 4 and in mode 2 for figure 5.
  • At least one PIN diode is mounted in parallel on the slit of the slit line, by associating with it a reactive element jX series (j being the symbol of imaginary) intended to compensate for the reactive elements associated with the diodes.
  • jX series j being the symbol of imaginary
  • the assembly constituted by the diode, its connection choke and the tuning - or compensation component jX has a reactance value defined in the passing direction: it is therefore necessary either to associate diode adaptation circuits, or to use at least two diodes placed at a suitable distance on the slotted line.
  • the ideal series compensation element leading to the widest operating band is a localized element.
  • mode 2 that is to say in FIG. 5; where it must be selfic, it is easy to achieve by lengthening the connection of the diode for example.
  • mode 1 on the other hand, where it must be capacitive to grant the connection self of the diode, it is not possible to realize it in the form of a localized capacity engraved, or reported, because this would have dimensions close to the quarter wave.
  • the use of localized capacity added to the circuit poses problems of reproducibility and technological complexity.
  • the solution provided by the invention is to make the necessary compensation using an engraved line section, coplanar with the strips of the slotted line on the common substrate.
  • FIG. 6 represents the central part of a line with a slot compensated by a coplanar resonator according to the invention.
  • the slotted line 4 being formed by two metal strips 2 and 3 deposited on a substrate, a reentrant coplanar line 9 is produced in one of the two strips, the strip 3 for example.
  • This reentrant coplanar line constituted by a metallization section 9, is obtained simply by etching in the metal of the strip 3 of two areas 10 and 11.
  • the section 9 has a length 1 obtained by etching.
  • the diode 7 is connected between the two points A and A ', located at the free end of the section 9 and on the metal strip 2 which is opposite to it.
  • a wire in the air, bridges the two edges of the metal strip which comprises the reentrant section 9: this wire connected between the points B and B 'makes it possible to equalize the potentials at these points the.
  • the length of the compensation section 9 can be, if necessary, adjusted by means of a metal wire which is thermo-compressed between the points C, C ′ and C ′′, in a variable position as a function of the desired compensation
  • the length of the compensation section 9 can also be obtained by depositing, in the bottom of the pads 10 and 11 which have been etched in the metallization 3, and in the vicinity of the points C, C ' and C ", a silver lacquer which more or less bypasses section 9.
  • ⁇ ⁇ being the wavelength at the frequency of the device, that is to say if 1 ⁇ , the device is selfic, that is to say if the device is capacitive.
  • FIG. 7 represents the central part of a line with a slot compensated by a coplanar resonator, in a second embodiment.
  • the diode being mounted between points A and A ', as in FIG. 6, point A is part of a first section 9 of length 1 1 but point A' is part of a second section 12 of length 1 2 .
  • Figure 8 shows a third variant of the invention. While in the case of Figures 6 and 7, the section or sections or stubs 9 and 12 were short-circuited, in the case of Figure 8 the section is in open circuit. It consists of at least one section 13, but it is preferable to add to it at least one section element 14, several small sections such as 14, 15, each being isolated on the substrate, being a preferable solution.
  • the solution of the open section makes it easier to polarize the diode mounted as above between the points A and A '. This polarization is brought by a metal wire 16, welded or thermocompressed on one of the sections 13, 14 or 15, the total length of the section being chosen by bridging between the elementary sections so as to compensate the diode.
  • the impedance of the compensation circuit according to FIG. 8 is given by: If 1 ⁇ , the compensation line is capacitive. , the compensation line is selfic.
  • the circuit of FIG. 8 can be produced with two symmetrical and open sections or stubs: that is to say that the symmetrical production in FIG. 7 with two sections in short circuit according to FIG. 6 can also be carried out with two open circuit sections according to Figure 8.
  • FIG. 9 represents an assembly with a diode, according to the invention, operating as well in mode 1 as in mode 2.
  • a high impedance section 17 is inserted at the height of the diode in the slotted line: this section is intended for adaptation to the on state, to correct the impedance of the diode which is not sufficiently high.
  • FIG. 10 represents the central part of a slit line with two diodes according to the invention. These two diodes are mounted in this case in a high impedance section 17, in the same way as in the case of Figure 9, but they are spaced from each other by a distance "e" which corresponds to an optimized spacing for adaptation in the forward direction, if the diodes are reverse biased. It is, however, possible to have the same assembly while keeping the same slot width along the line.
  • FIG. 11 represents the central part of a slit line with a diode, with section in open circuit.
  • the diode is polarized through the section 13 by an external connection 16, and taking into account the operation in mode 1 and the high impedance section 17, we have in this case, the equation:
  • Figure 12 shows a diagram in which the two types of sections are used to compensate for the diode.
  • the diode being mounted between a section 12 in short circuit, of characteristic impedance Z 2 and of length 1 2 and a section 13, in open circuit, of characteristic impedance Z 1 and of length 1 1 , the impedance of the compensation line is equal to:
  • the circuit according to the invention has essentially two types of application: on the one hand switching circuits such as switch, n-channel switch at low and medium levels, on the other hand passive limitation circuits, it is ie not ordered, of medium power.
  • switching circuits such as switch, n-channel switch at low and medium levels
  • passive limitation circuits it is ie not ordered, of medium power.
  • the first type controlled switches and switches
  • two operating states a state passing with low loss and a non-passing state with high isolation.
  • the diodes are self-polarized thanks to a continuous feedback external to the microwave circuit: in this case the diodes gradually self-polarize live as the microwave power increases.
  • the use of a circuit in mode 1 is imperative to have a passive limiter operation.
  • the line or slot limiting or switching device according to the invention is used in telecommunications equipment, radars or microwave missile guidance.

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  • Microwave Amplifiers (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
EP85400294A 1984-02-24 1985-02-19 Flossenleitungsschalter und Begrenzer im Mikrowellenbereich Expired EP0154583B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8402853 1984-02-24
FR8402853A FR2560442B1 (fr) 1984-02-24 1984-02-24 Dispositif de commutation et de limitation a ligne a fente, fonctionnant en hyperfrequences

Publications (2)

Publication Number Publication Date
EP0154583A1 true EP0154583A1 (de) 1985-09-11
EP0154583B1 EP0154583B1 (de) 1988-11-09

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Family Applications (1)

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EP85400294A Expired EP0154583B1 (de) 1984-02-24 1985-02-19 Flossenleitungsschalter und Begrenzer im Mikrowellenbereich

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US (1) US4642584A (de)
EP (1) EP0154583B1 (de)
DE (1) DE3566197D1 (de)
FR (1) FR2560442B1 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2202683B (en) * 1987-02-21 1991-04-03 New Japan Radio Co Ltd Waveguide-type diode limiter for low-pass filtering
US7507825B2 (en) 2003-08-26 2009-03-24 Pliva-Lachema A.S. Method of manufacturing of 7-ethyl-10-[4-(1-piperidino)-1- piperidino]- carbonyloxy- camptothecin
US7544801B2 (en) 2003-12-16 2009-06-09 Pliva-Lachema A.S. Method of manufacturing of 7-ethyl-10-hydroxycamptothecin

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789840A (en) * 1986-04-16 1988-12-06 Hewlett-Packard Company Integrated capacitance structures in microwave finline devices
FR2604286B1 (fr) * 1986-09-18 1988-11-10 Mayer Ferdy Structures a propagation d'onde pour la suppression de surtensions et l'absorption de transitoires
US4944857A (en) * 1989-09-01 1990-07-31 Westinghouse Electric Corp. Monolithic frequency selective limiter fabrication
US5107152A (en) * 1989-09-08 1992-04-21 Mia-Com, Inc. Control component for a three-electrode device
US5023573A (en) * 1989-09-21 1991-06-11 Westinghouse Electric Corp. Compact frequency selective limiter configuration
US4970775A (en) * 1989-09-25 1990-11-20 Westinghouse Electric Corp. Batch fabrication of frequency selective limiter elements
US4980657A (en) * 1989-09-29 1990-12-25 Westinghouse Electric Corp. Coplanar waveguide frequency selective limiter
US5142255A (en) * 1990-05-07 1992-08-25 The Texas A&M University System Planar active endfire radiating elements and coplanar waveguide filters with wide electronic tuning bandwidth
US5422609A (en) * 1994-06-17 1995-06-06 The United States Of America As Represented By The Secretary Of The Navy Uniplanar microstrip to slotline transition
JP3921370B2 (ja) * 2001-10-03 2007-05-30 日本電波工業株式会社 高周波フィルタ
JP4588947B2 (ja) * 2001-12-28 2010-12-01 日本電波工業株式会社 コプレーナライン型の高周波発振器
DE10301982B4 (de) * 2003-01-15 2007-06-06 Infineon Technologies Ag Wellenleiter
JP4547992B2 (ja) * 2003-07-24 2010-09-22 株式会社村田製作所 高周波スイッチおよびそれを用いた電子装置
US20090315638A1 (en) * 2008-06-24 2009-12-24 Honeywell International Inc. Millimeter wave low-loss high-isolation switch
RU2456705C1 (ru) * 2011-01-24 2012-07-20 Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") Ограничитель свч мощности
RU2515181C1 (ru) * 2012-09-17 2014-05-10 Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") Сверхширокополосный ограничитель свч-мощности
RU2653088C1 (ru) * 2017-03-06 2018-05-07 Акционерное общество Центральное конструкторское бюро аппаратостроения Волноводный выключатель
US10897130B2 (en) * 2018-03-30 2021-01-19 The Boeing Company Micro plasma limiter for RF and microwave circuit protection
CN113285679B (zh) * 2021-04-23 2022-08-23 中国电子科技集团公司第二十九研究所 一种超宽带小型化幅度扩张电路
CN113394527B (zh) * 2021-06-22 2022-06-07 湖南电磁场科技有限公司 单层夹片式波导限幅结构及波导限幅器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2923901A (en) * 1941-07-25 1960-02-02 robertson
US3568105A (en) * 1969-03-03 1971-03-02 Itt Microstrip phase shifter having switchable path lengths
US3914713A (en) * 1972-05-23 1975-10-21 Japan Broadcasting Corp Microwave circuits constructed inside a waveguide
FR2451641A1 (fr) * 1979-03-16 1980-10-10 Thomson Csf Dispositif de transition entre deux lignes de propagation a structures de champ electrique differentes, et son application aux circuits integres et aux antennes hyperfrequences
WO1981001080A1 (en) * 1979-10-11 1981-04-16 Western Electric Co Adjustable microstrip and stripline tuners
EP0028403A1 (de) * 1979-11-05 1981-05-13 CSELT Centro Studi e Laboratori Telecomunicazioni S.p.A. Anpassungsquerzweig für Mikrobandschaltungen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995239A (en) * 1975-09-08 1976-11-30 Rockwell International Corporation Transition apparatus
US4425549A (en) * 1981-07-27 1984-01-10 Sperry Corporation Fin line circuit for detecting R.F. wave signals
US4541120A (en) * 1982-08-19 1985-09-10 International Standard Electric Corporation Transmitter-receiver module

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2923901A (en) * 1941-07-25 1960-02-02 robertson
US3568105A (en) * 1969-03-03 1971-03-02 Itt Microstrip phase shifter having switchable path lengths
US3914713A (en) * 1972-05-23 1975-10-21 Japan Broadcasting Corp Microwave circuits constructed inside a waveguide
FR2451641A1 (fr) * 1979-03-16 1980-10-10 Thomson Csf Dispositif de transition entre deux lignes de propagation a structures de champ electrique differentes, et son application aux circuits integres et aux antennes hyperfrequences
WO1981001080A1 (en) * 1979-10-11 1981-04-16 Western Electric Co Adjustable microstrip and stripline tuners
EP0028403A1 (de) * 1979-11-05 1981-05-13 CSELT Centro Studi e Laboratori Telecomunicazioni S.p.A. Anpassungsquerzweig für Mikrobandschaltungen

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
1981 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, 1981, pages 307-309, IEEE, New York, US; H.E. HENNAWY et al.: "Computer-aided design of semiconductor mounts in fin-line technology" *
1982 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, Dallas, 15-17 juin 1982, pages 198-200, New York, US; H.EL HENNAWY et al.: "New structures for impedance transformation in fin-lines" *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2202683B (en) * 1987-02-21 1991-04-03 New Japan Radio Co Ltd Waveguide-type diode limiter for low-pass filtering
US7507825B2 (en) 2003-08-26 2009-03-24 Pliva-Lachema A.S. Method of manufacturing of 7-ethyl-10-[4-(1-piperidino)-1- piperidino]- carbonyloxy- camptothecin
US7544801B2 (en) 2003-12-16 2009-06-09 Pliva-Lachema A.S. Method of manufacturing of 7-ethyl-10-hydroxycamptothecin
US8039626B2 (en) 2003-12-16 2011-10-18 Plus Chemicals Sa Method of manufacturing of 7-ethyl-10-hydroxycamptothecin

Also Published As

Publication number Publication date
US4642584A (en) 1987-02-10
FR2560442A1 (fr) 1985-08-30
EP0154583B1 (de) 1988-11-09
FR2560442B1 (fr) 1987-08-07
DE3566197D1 (en) 1988-12-15

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