EP0139186A1 - Vorrichtung zur Schichtdickenmessung - Google Patents

Vorrichtung zur Schichtdickenmessung Download PDF

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Publication number
EP0139186A1
EP0139186A1 EP84110401A EP84110401A EP0139186A1 EP 0139186 A1 EP0139186 A1 EP 0139186A1 EP 84110401 A EP84110401 A EP 84110401A EP 84110401 A EP84110401 A EP 84110401A EP 0139186 A1 EP0139186 A1 EP 0139186A1
Authority
EP
European Patent Office
Prior art keywords
light
wavelength
amount
film
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP84110401A
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English (en)
French (fr)
Inventor
Takeo Yamada
Kousaku Takasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Engineering Corp
Original Assignee
Nippon Kokan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kokan Ltd filed Critical Nippon Kokan Ltd
Publication of EP0139186A1 publication Critical patent/EP0139186A1/de
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization

Definitions

  • the present invention relates to an apparatus for measuring a thickness of a film formed on an object in accordance with polarization analysis.
  • a chromium oxide film is formed on a plated surface of a tin free steel (TFS) plate or a nickel-plated steel plate.
  • TFS tin free steel
  • a thickness of a chromium oxide film greatly influences adhesion of an anti-corrosive paint to be* coated on the steel plate. Control of the thickness of the chromium oxide film is one of the most important control factors in the manufacture of steel plates.
  • a thickness of an oil film applied by an electrostatic oil coater to a surface of a steel plate on an electric tin plating line (ETL), a TFS plate or a tin plate for export use is also one of the most important control factors for guaranteeing the quality of products.
  • a thickness of a chromium oxide film or an oil film is from a multiple of several to several ten nanometers (ten to several hundred Angstrom units).
  • a highly precise measuring machine is required to 'measure such a fine thickness on the manufacturing line.
  • a film thickness measurement method by polarization analysis is proposed as one of the methods of measuring very fine thicknesses.
  • light from a light source is filtered through a monochromatic filter to obtain a monochromatic light component.
  • the monochromatic component is incident on a first polarizer to obtain a linearly polarized light component.
  • This linearly polarized light component is then elliptically polarized by a phase compensator.
  • An elliptically polarized light component is then incident on an object at a predetermined angle of incidence.
  • the polarizer and the phase compensator are arranged to linearly polarize light reflected by the object.
  • the reflected light then passes through a second polarizer and is detected by a photodetector.
  • a phase shift acting on the incident light in accordance with an optical constant of the film cancels the phase shift caused by the phase compensator. Therefore, when the polarization directions of the first and second polarizers are directed such that the amount of light detected by the photodetector becomes zero, an unknown film thickness can be measured.
  • the phase shift caused by the phase compensator must be adjusted every time a film thickness changes so as to set the amount of light detected by the photodetector to be zero (extinguished).
  • accurate on-line film thickness measurement cannot be performed in practice.
  • an apparatus for measuring film thickness comprising: a light source for emitting light having continuous spectral components; polarization controlling. means for polarizing the light along a predetermined direction and radiating polarized light onto the object; a photodetector for detecting an amount of light reflected by the object and generating a light amount signal; means for detecting data representing a wavelength of a spectral component in accordance with the light amount signal such that the amount of light reflected by the object and incident on the photodetector becomes zero (extinguished); and a film thickness calculating means for calculating the thickness of the film formed on the object in accordance with resultant data.
  • Fig. 1 shows an apparatus for measuring a thickness of a film formed on an object according to an embodiment of the present invention.
  • a chromium oxide film 1 is formed on a tin free steel plate 2 to a predetermined thickness d.
  • Monochromatic light I from a light source 10 is incident on the film 1 at an angle ⁇ through a monochromatic light select unit 20.
  • The'light source 10 emits light having continuous spectral components.
  • the light source 10 can comprise a white light source.
  • a wavelength of incident mdnochromatic light I a refractive index of a medium (air in this embodiment) in which the steel plate 2 is placed, a refractive index of the chromium oxide film 1, and a refractive index of the steel plate 2 are given to be ⁇ , N0, Nl and N2, respectively.
  • the parallel or perpendicular vibration component R v is given as follows: for
  • a ratio p of the P component R P to the S component R S of the reflected light R at the interface 3 is given in accordance with equations (1) to (7) as follows:
  • the reflected light R is guided to a photodetector 40 through an analyzer 41, so that a light amount signal corresponding to the amount of incident light is generated from the photodetector 40.
  • This light amount signal is supplied to a control unit 30.
  • the control unit 30 includes a wavelength detecting means responsive to the light amount signal to detect a wavelength at which the amount of reflected light R becomes zero, -and a film thickness calculating means for calculating a thickness of a film in accordance with the detected wavelength.
  • the control unit 30 supplies a wavelength select signal to the monochromatic light select unit 20.
  • the monochromatic select unit 20 sets a monochromatic wavelength in accordance with this wavelength select signal.
  • a wavelength select signal W supplied from the control unit 30 is supplied to a controller 21.
  • the controller 21 comprises, for example, a ROM table for generating a frequency designation signal in response to the input wavelength select signal W. This frequency designation signal is supplied to an oscillation frequency determination terminal of an ultrasonic generator 22, so that ultrasonic oscillation is performed at a designated frequency.
  • the ultrasonic beam is thus generated and supplied to an acoustooptic filter 23.
  • This filter 23 receives light emitted from the light source 10 having continuous spectral components.
  • the Bragg diffraction phenomenon occurs in the acoustooptic filter 23. This phenomenon occurs only for the monochromatic light component having a wavelength corresponding to the designated frequency.
  • Polarizers 24a and 24b, and a slit 25 are arranged in front of and behind the filter 23, respectively, thereby eliminating high-order diffraction light and nondiffraction light. Therefore, only a linearly polarized monochromatic light component is supplied to a Babinet-Soleil's compensator 26.
  • a phase difference between the P and S components of the linearly polarized light is generated by the compensator 26, and elliptically polarized light I is thus obtained.
  • the elliptically polarized light I is then incident on the substantially transparent film 1 having a thickness of several to several tens of nanometers (several tens to several hundreds of Angstrom units).
  • the compensator 26 is driven by a motor 27 in response to a drive signal supplied from the controller 21.
  • the compensator 26 controls a predetermined phase difference (i.e., ⁇ - AO) between the P and S components regardless of changes in wavelength of the monochromatic light.
  • the thickness of the film 1 is given as a reference thickness d0, and that the optical system, the unit 20 and the analyzer 41 are arranged such that the amount of light detected by the photodetector 40 becomes zero (extinguished) when the wavelength of the incident monochromatic light I is ⁇ 0.
  • the refractive indices N0, Nl and N2 in equations (1) to (7) will not change even if the wavelength of the incident monochromatic light changes.
  • the value of the left-hand side d/X is given to be constant.
  • the extinction state is constantly obtained.
  • the true film thickness can be obtained according to the following calculation:
  • the operation of the apparatus shown in Figs. 1 and 2 will now be described.
  • the monochromatic light I having the reference wavelength is incident from the unit 20 on the film 1 having the reference thickness.
  • the polarization directions of the polarizers 24a and 24b, the Babinet-Soleil's compensator 26 and the analyzer 41 are adjusted such that when the light elliptically polarized through the polarizers 24a and 24b passes through the film 1 through the Babinet-Soleil's compensator 26 in the unit 20 and is reflected by the interface 3 and the reflected light R is incident on the analyzer 41 and is incident on the photodetector 40, the amount of light incident on the photodetector 40 becomes zero.
  • the value d0/ ⁇ 0 is calculated, and a calculated value is stored in, for example, a RAM in the control unit 30.
  • the wavelength select signal W is supplied from the control unit 30 to the controller 21, -and the monochromatic light having the wavelength specified by the wavelength select signal W is emitted.
  • the monochromatic light passes through the film 1 and is reflected at the interface 3, thereby performing light amount measurement through the photodetector 40.
  • the thickness of the film 1 can be calculated by the control unit 30 using the value d0/ ⁇ 0 stored in the RAM in accordance with equation (10).
  • a wavelength select signal W for emitting monochromatic light having . another wavelength from the unit 20 can be generated from the control unit 30.
  • the control unit 30 detects whether or not the detected amount of light becomes zero.
  • Fig. 3 is a graph showing the relationship between the measured chromium oxide film thicknesses and the extinction wavelengths. As is apparent from Fig. 3, it is understood that equation (10) is established.
  • the wavelength of the incident monochromatic light I is swept to cause the control unit 30 to detect the wavelength X at which the detected amount of reflected light R becomes zero, thereby calculating the film thickness with only a simple calculation.
  • mechanical adjustment like in the prior art need not be performed. Therefore, the apparatus using this method can be suitable for on-line film thickness measurement.
  • wavelength sweeping may be performed by, for example, a microprocessor arranged in the control unit 30 at high speed, so that high precision film thickness measurement can be continuously performed.
  • the measurement precision will not be substantially influenced by coarseness and contamination on the surface of the film 1.
  • phase compensator 51 comprises a 1/4 wavelength plate for a wavelength XO.
  • An orientation angle of the phase compensator 51 is fixed at +(x/4) or -( ⁇ /4).
  • the wavelength ⁇ 0 represents a center wavelength of the spectral wavelengths to be measured.
  • Reflected light R is guided to a photodetector 60 through an analyzer 52.
  • the photodetector 60 also serves as a spectroscope for measuring the amount of spectral components.
  • a detailed arrangement of the photodetector 60 is illustrated in Fig. 5.
  • Monochromatic light R reflected through the film 1 to be measured is focused on a slit 63 through a lens 61 and a sliding mirror 62.
  • Light incident on the slit 63 as a secondary light source is reflected by a mirror 64 and is guided to a diffraction grating 65.
  • the reflection directions of light components reflected by the diffraction grating 65 vary in accordance with the wavelengths of the light components and serve to focus the spectral light components on a linear array 66.
  • the linear array 66 comprises a multi-channel detector having a plurality aligned photoelectric transducers 66-1, 66-2 ... 66-n.
  • the amounts of light which are detected by the respective photoelectric transducers 66-1 to 66-n of the linear array 66 corresspond to the specific wavelengths of the spectral distribution of the incident light, respectively.
  • the photodetector 60 produces the spectral distribution of the reflected light R.
  • Reference numeral 67 denotes a finder.
  • the output from the photodetector 60 is supplied to a computer 54 through an interface 53.
  • the computer 54 compensates for the spectral characteristics of the light source 10 and the photodetector 60, detects the extinction wavelength X, and calculates the film thickness d in accordance with equation (10).
  • Reference numeral 55 denotes a display.
  • the output light I from the light source 10 irradiates the film 1 at an incident angle ⁇ through the polarizer 50 and the phase compensator 51.
  • the light R reflected through the film 1 is detected by the photodetector 60 through the analyzer 52.
  • a central film thickness within the possible measurement thickness range is given to be d0.
  • the reflected ligght R comprises linearly polarized light.
  • the analyzer 52 is arranged at an orientation angle x so as to extinguish the linearly polarized light R.
  • the photodetector 60 spectrally measures the amount of reflected light, so that the amount of light at the frequency ⁇ 0 becomes zero, thereby detecting the extinction wavelength ⁇ 0.
  • Fig. 6 shows the amount of light detected by the photodetector 60 under the above assumption. Referring to Fig. 6, the wavelength is plotted along the abscissa, and the amount of light is plotted along the ordinate. In the graph shown in Fig. 6, the amount of light from the light source 10 is given to be constant at a wavelength range of 400 to 900 nm, and the wavelength sensitivity of the photodetector 60 is given to be constant.
  • the film thickness d0 at the wavelength ⁇ 0 is 10 nm (100 A).
  • the film thickness d can be calculated by the computer 54 using the extinction wavelength ⁇ in accordance with equation (10). In this case, when condition d0 ⁇ 30% is established, measurement error of the film thickness d falls within 1%.
  • the phase angle will not become 90 degrees, and the complete extinction state will not be obtained.
  • a thickness to be measured falls within the range of d0 ⁇ 30%, a minimum light amount wavelength is present, as shown in Fig. 8. Even if this wavelength is. regarded as the extinction wavelength ⁇ , the measurement error falls within 1%.
  • the film thickness d is 7 nm (70 A) which is smaller by 30% than that shown in Fig. 6.
  • the possible measurement range is limited due to the wavelength characteristics of the light source 10 and the analyzer 52 when the orientation angles of the polarizer 50 and the analyzer 52 are predetermined. Even if the film thickness measurement range is wide, measurement can be performed in the following manner.
  • the orientation angles of the polarizer 50 and the analyzer 52 can be selected such that the incident light I having the center wavelength ⁇ 0 can be extinguished at a predetermined indicent angle when the film thickness changes in an order of d0, dl, d2 ... dn (d0 ⁇ dl ⁇ ... dn).
  • the orientation angles of the polarizer 50 and the analyzer 52 which correspond to d0 to dn are given as ⁇ 0, el, ⁇ 2 ... ⁇ n, and x0, xl, x2 ... xn, respectively.
  • a device for aligning the orientation angles of the polarizer 50 and the analyzer 52 with ⁇ i and ⁇ i is arranged in the apparatus, the possible measurement range can be widened.
  • the orientation angle 8 of the polarizer 50 is selected to linearly polarize the light having continuous spectral components from the light source 10 so as to obtain light having the wavelength ⁇ 0 and reflected through the film 1 having the thickness d0.
  • the analyzer 52 is arranged at the orientation angle so as to extinguish the linearly polarized reflected light R, thereby detecting the extinction wavelength X caused by a change in film thickness d by means of the photodetector 60.
  • the computer 54 calculates the thickness d by using the extinction wavelength ⁇ in accordance with equation (10). Therefore, the film thickness d can be immediately calculated in the same manner as in the first embodiment.
  • the extinction wavelength X is. measured in accordance with an amount of spectral component at the same measuring point in a real-time manner, so that the coarse surface and contamination which locally change the absolute amount of light will not influence the measurement, thereby performing accurate measurement of the film thickness d.
  • the apparatus can provide continuous on-line film thickness measurement.
  • the reflected light is extinguished at the wavelength ⁇ 0 when the film thickness is set to be d0.
  • the extinction wavelength ⁇ changing in accordance with a change in film thickness d is detected.
  • the film thickness d is calculated in accordance with equation (10), thereby immediately calculating the film thickness d.
  • the apparatus In the apparatus according to the present invention, light having the reference wavelength X0 irradiates the object, and the reflected light is detected by the photodetector to obtain the extinction wavelength ⁇ 0. Then the extinction wavelength caused by the film thickness difference can be detected in accordance with the light amount signal from the photodetector. The film thickness is calculated in accordance with the extinction wavelength. Unlike the conventional apparatus wherein the film thickness is measured in accordance with polarization analysis, the cumbersome operation need not be performed, thereby providing an apparatus suitable for on-line use.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
EP84110401A 1983-08-31 1984-08-31 Vorrichtung zur Schichtdickenmessung Ceased EP0139186A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP159981/83 1983-08-31
JP58159981A JPS6052706A (ja) 1983-08-31 1983-08-31 膜厚測定装置

Publications (1)

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EP0139186A1 true EP0139186A1 (de) 1985-05-02

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EP84110401A Ceased EP0139186A1 (de) 1983-08-31 1984-08-31 Vorrichtung zur Schichtdickenmessung

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US (1) US4606641A (de)
EP (1) EP0139186A1 (de)
JP (1) JPS6052706A (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0300508A2 (de) * 1987-07-23 1989-01-25 Nkk Corporation Dickenmessgerät für Schichten
AU626201B2 (en) * 1989-08-14 1992-07-23 Hughes Aircraft Company Non-contact on-line determination of phosphate layer thickness and composition of a phosphate coated surface
WO1997006016A1 (en) * 1995-08-03 1997-02-20 Sls Biophile Limited Monitoring of covert marks
EP0766812A1 (de) * 1995-03-20 1997-04-09 Kansas State University Research Foundation Ellipsometrisches mikroskop
GB2308457A (en) * 1995-08-03 1997-06-25 Sls Biophile Limited Monitoring of covert marks
CN102353330A (zh) * 2011-08-30 2012-02-15 东莞市盟拓光电科技有限公司 一种在三维锡膏厚度测试中确定锡膏基准面的方法

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JPS61217705A (ja) * 1985-03-22 1986-09-27 Dainippon Screen Mfg Co Ltd 膜厚測定装置
US4785336A (en) * 1986-12-04 1988-11-15 Libbey-Owens-Ford Co. Device for monitoring characteristics of a film on a substrate
US4826321A (en) * 1988-03-14 1989-05-02 Nanometrics, Incorporated Thin dielectric film measuring system
US5003823A (en) * 1989-08-21 1991-04-02 Sundstrand Corporation Noncontact rotating liquid film thickness sensor
US5504582A (en) * 1992-09-18 1996-04-02 J. A. Woollam Co. Inc. System and method for compensating polarization-dependent sensitivity of dispersive optics in a rotating analyzer ellipsometer system
US5521706A (en) * 1992-09-18 1996-05-28 J. A. Woollam Co. Inc. System and method for compensating polarization-dependent sensitivity of dispersive optics in a rotating analyzer ellipsometer system
US5373359A (en) * 1992-09-18 1994-12-13 J. A. Woollam Co. Ellipsometer
JPH0686011U (ja) * 1993-01-25 1994-12-13 日本航空電子工業株式会社 膜厚および屈折率測定装置
US5513533A (en) * 1993-04-15 1996-05-07 The United States Of America As Represented By The Secretary Of The Navy Detection of vibrational energy via optical interference patterns
EP0622624B1 (de) * 1993-04-23 1999-12-01 Research Development Corporation Of Japan Verfahren zur Kontrolle der Schichtdicke und/oder des Brechungsindexes
ES2076083B1 (es) * 1993-06-04 1996-06-01 Fuesca Sl Aparato y metodo de medida y control de la densidad de reticulacion de los tratamientos en caliente y frio del vidrio aligerado.
DE4343490A1 (de) * 1993-12-20 1995-06-22 Max Planck Gesellschaft Schnelles spektroskopisches Ellipsometer
JP2945275B2 (ja) * 1994-07-05 1999-09-06 デイエツクスアンテナ株式会社 衛星信号受信アンテナ方向調整用測定装置
US5798837A (en) 1997-07-11 1998-08-25 Therma-Wave, Inc. Thin film optical measurement system and method with calibrating ellipsometer
US6278519B1 (en) 1998-01-29 2001-08-21 Therma-Wave, Inc. Apparatus for analyzing multi-layer thin film stacks on semiconductors
KR100386793B1 (ko) * 1998-04-21 2003-06-09 가부시키가이샤 히타치세이사쿠쇼 박막의 막두께 계측 방법 및 그 장치 및 이를 이용한 박막디바이스의 제조 방법 및 그 제조 장치
US6885466B1 (en) * 1999-07-16 2005-04-26 Denso Corporation Method for measuring thickness of oxide film
DE60036621T2 (de) * 1999-08-06 2008-06-26 Asahi Kasei K.K., Ltd. Bindungsanalyseinstrumente basierend auf lichtabschwächung durch dünnschichten
US6900900B2 (en) * 2000-11-16 2005-05-31 Process Diagnostics, Inc. Apparatus and method for enabling high resolution film thickness and thickness-uniformity measurements
DE10137158B4 (de) * 2001-07-30 2005-08-04 Leica Microsystems Heidelberg Gmbh Verfahren zur Scanmikroskopie und Scanmikroskop
US20080212086A1 (en) * 2005-12-06 2008-09-04 I. C. Technologies, Inc. Packaging Material Inspection Machine
DE102015007054A1 (de) 2015-06-02 2016-12-08 Thomas Huth-Fehre Verfahren und Vorrichtung zur Bestimmung der Dicke von dünnen organischen Schichten
CN113267132B (zh) * 2021-07-16 2021-09-17 中国空气动力研究与发展中心高速空气动力研究所 一种基于双色成像的全局油膜厚度在线测量方法

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US4015127A (en) * 1975-10-30 1977-03-29 Aluminum Company Of America Monitoring film parameters using polarimetry of optical radiation
US4129781A (en) * 1976-05-17 1978-12-12 Doyle W Film thickness measuring apparatus and method

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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015127A (en) * 1975-10-30 1977-03-29 Aluminum Company Of America Monitoring film parameters using polarimetry of optical radiation
US4129781A (en) * 1976-05-17 1978-12-12 Doyle W Film thickness measuring apparatus and method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0300508A2 (de) * 1987-07-23 1989-01-25 Nkk Corporation Dickenmessgerät für Schichten
EP0300508A3 (en) * 1987-07-23 1990-11-28 Nkk Corporation Film thickness-measuring apparatus
AU626201B2 (en) * 1989-08-14 1992-07-23 Hughes Aircraft Company Non-contact on-line determination of phosphate layer thickness and composition of a phosphate coated surface
EP0766812A1 (de) * 1995-03-20 1997-04-09 Kansas State University Research Foundation Ellipsometrisches mikroskop
EP0766812A4 (de) * 1995-03-20 1998-11-25 Univ Kansas State Ellipsometrisches mikroskop
WO1997006016A1 (en) * 1995-08-03 1997-02-20 Sls Biophile Limited Monitoring of covert marks
GB2308457A (en) * 1995-08-03 1997-06-25 Sls Biophile Limited Monitoring of covert marks
US6100967A (en) * 1995-08-03 2000-08-08 Sls Biophile Limited Monitoring of covert marks
CN102353330A (zh) * 2011-08-30 2012-02-15 东莞市盟拓光电科技有限公司 一种在三维锡膏厚度测试中确定锡膏基准面的方法

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Publication number Publication date
US4606641A (en) 1986-08-19
JPS6052706A (ja) 1985-03-26

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