EP0114958B1 - Microwave hybrid ring coupling device - Google Patents

Microwave hybrid ring coupling device Download PDF

Info

Publication number
EP0114958B1
EP0114958B1 EP83111585A EP83111585A EP0114958B1 EP 0114958 B1 EP0114958 B1 EP 0114958B1 EP 83111585 A EP83111585 A EP 83111585A EP 83111585 A EP83111585 A EP 83111585A EP 0114958 B1 EP0114958 B1 EP 0114958B1
Authority
EP
European Patent Office
Prior art keywords
ring
connecting arms
microstrip
microwave
hybrid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP83111585A
Other languages
German (de)
French (fr)
Other versions
EP0114958A1 (en
Inventor
Wilfried Dipl.-Ing. Heine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bosch Telecom GmbH
Original Assignee
ANT Nachrichtentechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ANT Nachrichtentechnik GmbH filed Critical ANT Nachrichtentechnik GmbH
Publication of EP0114958A1 publication Critical patent/EP0114958A1/en
Application granted granted Critical
Publication of EP0114958B1 publication Critical patent/EP0114958B1/en
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/19—Conjugate devices, i.e. devices having at least one port decoupled from one other port of the junction type
    • H01P5/22—Hybrid ring junctions
    • H01P5/222—180° rat race hybrid rings

Definitions

  • the invention relates to a microwave hybrid ring according to the preamble of claim 1.
  • a microwave hybrid ring is known for example from JP-A-57-97 204.
  • This ring hybrid is not a 180 ° - another 90 0- ring hybrid. It only serves as a phase switch for diodes. Power is fed in via a first connection arm and is led to diodes via two further connection arms which are closely adjacent to the first connection arm.
  • the object of the invention is to provide a realization for a 180 ° or 90 ° ring hybrid, with all connecting arms being galvanically decoupled from one another and reflections being suppressed.
  • the connecting arms of the ring hybrid are designated by the reference numerals 1, 2, 3 and 4. They are located on the top of the dielectric carrier substrate 5 and are designed as microstrip lines.
  • the ring 6 of the ring hybrid consists of a closed slot line on the underside of the carrier substrate 5.
  • the connecting arms 1, 2, 3 and 4 cross the ring 6 vertically in the coupling area.
  • the connection arms 1, 2, 3 and 4 are distributed over the circumference of the ring 6, which has a circumference of 3/2 ⁇ , as in a conventional 180 ° ring hybrid; i.e.
  • connection arm 4 which is preferably connected to an absorber, can be designed in various ways.
  • connection arm 4 is connected to a parallel capacitance 10 in microstrip technology on the side projecting into the ring area.
  • Fig. 2 the ring hybrid is shown in section.
  • the slot line 6 is embedded in the conductive layer 7.
  • the characteristic impedance of the microstrip line is preferably chosen to be 50 ⁇ . This results in a characteristic impedance of 71 Q for the slot line.
  • connection arms 1, 2, 3 and 4 are distributed on the circumference of the ring 6, which is constructed using slot line technology, each at a distance of ⁇ / 4.
  • the connecting arms cross the ring 6 again vertically.
  • the connecting arms 1, 2 and 3 also project into the ring area by one ⁇ / 4 piece each.
  • the ring 6 in slot line technology on the underside of the carrier substrate 5 has slot lines with different widths.
  • the width b1 of the slot line is selected so that that they have a wave impedance of V 2, for example 35 ⁇ .
  • the width b2 is selected so that it has a characteristic impedance of Z o , for example 50 ⁇ .
  • tuning elements can be attached in the area of the intersections.

Landscapes

  • Waveguides (AREA)

Description

Die Erfindung betrifft ein Mikrowellenringhybrid gemäss dem Oberbegriff des Patentanspruches 1. Ein solches Ringhybrid ist beispielsweise bekannt aus JP-A-57-97 204. Dieses Ringhybrid ist weder ein 180°- noch ein 900-Ringhybrid. Es dient lediglich als Phasenschalter für Dioden. Über einen ersten Anschlussarm wird Leistung eingespeist und über zwei eng benachbarte gegenüber dem ersten Anschlussarm gelegene weitere Anschlussarme zu Dioden geführt.The invention relates to a microwave hybrid ring according to the preamble of claim 1. Such a ring hybrid is known for example from JP-A-57-97 204. This ring hybrid is not a 180 ° - another 90 0- ring hybrid. It only serves as a phase switch for diodes. Power is fed in via a first connection arm and is led to diodes via two further connection arms which are closely adjacent to the first connection arm.

Aufgabe der Erfindung ist es ausgehend vom Oberbegriff des Patentanspruchs 1 eine Realisierung für ein 180°- oder 90°-Ringhybrid anzugeben, wobei alle Anschlussarme galvanisch voneinander entkoppelt sind und Reflexionen unterdrückt werden.Based on the preamble of claim 1, the object of the invention is to provide a realization for a 180 ° or 90 ° ring hybrid, with all connecting arms being galvanically decoupled from one another and reflections being suppressed.

Diese Aufgabe wird durch die kennzeichnenden Merkmale des Patentanspruchs 1 oder 2 gelöst.This object is achieved by the characterizing features of patent claim 1 or 2.

Kopplungen zwischen Schlitzleitungen und Microstrip-Leitungen sind auch aus DE-OS 2 607 634 bekannt. Dieser Veröffentlichung ist aber keine Anregung zu entnehmen, wie ein Mikrowellenringhybrid bei galvanischer Entkopplung aller Anschlussarme ohne Zusatzmassnahmen realisiert werden könnte.Couplings between slot lines and microstrip lines are also known from DE-OS 2 607 634. However, there is no suggestion in this publication as to how a microwave ring hybrid could be implemented without additional measures with galvanic decoupling of all connecting arms.

In den Unteransprüchen sind vorteilhafte Aufgestaltungen der Erfindung aufgezeigt.Advantageous configurations of the invention are shown in the subclaims.

Erhebliche Vorteile der Erfindung sind insbesondere darin zu sehen, dass sich trotz der galvanischen Entkopplung aller Anschlussarme sämtliche Ein- und Ausgänge des Ringhybrids auf einer Seite des Trägersubstrates befinden. Dadurch können die mit dem Ringhybrid zu verbindenden Baugruppen alle auf einer Seite des Trägersubstrates angeordnet werden. Die Schlitzleitung, die wegen ihres ungünstigen Abstrahlverhaltens nicht mit einstrahlungsempfindlichen Baugruppen gekoppelt sein darf, befindet sich auf der diesen Baugruppen abgewandten Trägersubstratseite und stört somit kaum. Ein weiterer Vorteil ist darin zu sehen, dass die Trägersubstratseite auf der sich die Schlitzleitung befindet, bis auf die «Störstelle-Schlitzleitung» eine geschlossene leitfähige Schicht trägt und so Abstrahlungen der mit dem Ringhybrid verbundenen Baugruppen in Richtung Trägersubstrat abschirmt. Benachbarte Mikrowellenbauteile können daher, ohne wesentlichen Störstrahlungen ausgesetzt zu sein, in die Nähe dieser leitfähigen Schicht gebracht werden. Die Packungsdichte von Mikrowellenschaltungen kann somit wesentlich erhöht werden.Significant advantages of the invention can be seen in particular in the fact that, despite the galvanic decoupling of all connecting arms, all the inputs and outputs of the ring hybrid are located on one side of the carrier substrate. As a result, the assemblies to be connected to the ring hybrid can all be arranged on one side of the carrier substrate. The slot line, which must not be coupled to radiation-sensitive assemblies because of its unfavorable radiation behavior, is located on the carrier substrate side facing away from these assemblies and therefore hardly interferes with it. Another advantage can be seen in the fact that the carrier substrate side on which the slot line is located carries a closed conductive layer except for the “fault location slot line” and thus shields radiation from the modules connected to the ring hybrid in the direction of the carrier substrate. Adjacent microwave components can therefore be brought into the vicinity of this conductive layer without being exposed to significant interference radiation. The packing density of microwave circuits can thus be increased significantly.

Anhand der Zeichnungen wird die Erfindung nun näher erläutert.The invention will now be explained in more detail with reference to the drawings.

Es zeigen

  • Fig. 1 eine Aufsicht auf ein 180°-Ringhybrid nach der Erfindung,
  • Fig. 2 eine Schnittzeichnung hierzu und
  • Fig. 3 ein 90°-Ringhybrid.
Show it
  • 1 is a plan view of a 180 ° ring hybrid according to the invention,
  • Fig. 2 is a sectional drawing of this and
  • Fig. 3 shows a 90 ° ring hybrid.

In Fig. 1 sind die Anschlussarme des Ringhybrids mit den Bezugszeichen 1, 2, 3 und 4 bezeichnet. Sie befinden sich auf der Oberseite des dielektrischen Trägersubstrates 5 und sind als Microstrip-Leitungen ausgeführt. Der Ring 6 des Ringhybrids besteht aus einer geschlossenen Schlitzleitung auf der Unterseite des Trägersubstrates 5. Die Anschlussarme 1,2,3 und 4 kreuzen den Ring 6 im Koppelbereich senkrecht. Die Anschlussarme 1, 2, 3 und 4 sind auf dem Umfang des Ringes 6, der insgesamt einen Umfang von 3/2 λ aufweist, wie bei einem herkömmlichen 180°-Ringhybrid verteilt; d.h. der Abstand zweier Anschlussarme - 1 und 3 - auf dem Umfang des Ringes 6 beträgt 3/4 λ und die weiteren Anschlussarme - und 4-haben jeweils einen Abstand von λ/4 auf dem Umfang des Ringes 6 zu benachbarten Anschlussarmen. Die einen Leitungsenden der Anschlussarme 1, 2 und 3 ragen um ein Ä/ 4-Stück in den Ringbereich hinein und sorgen damit für eine geeignete Transformation im Koppelbereich von Schlitzleitung und Microstrip-Leitung. Die Leitungslängen λ/4, 3/4 λ, 3/2 λ können jeweils mit einem Faktor n (n = 1, 2, 3, ...) multipliziert sein. Die Ausgestaltung des vorzugsweise mit einem Absorber beschalteten Anschlussarmes 4 kann auf verschiedene Weise geschehen. Entweder können beide Leitungsenden diesseits und jenseits der Ringüberkreuzung um jeweils ein λ/4-Leitungsstück in den Ringbereich hinein- bzw. von diesem nach aussen wegragen oder es kann, wie in Fig. 1 dargestellt, ein Leitungsende um ein λ/4-Stück vom Ringbereich nach aussen ragen, wohingegen das andere Leitungsende durch einen Niet 9 mit der leitfähigen Schicht 7, vgl. Fig. 2, auf der Unterseite des Trägersubstrates 5 verbunden ist und somit einen Absorber bildet. Zur Kompensation von Serieninduktivitäten des Absorbers ist der Anschlussarm 4 auf der in den Ringbereich ragenden Seite mit einer Parallelkapazität 10 in Microstrip-Technik beschaltet.In Fig. 1, the connecting arms of the ring hybrid are designated by the reference numerals 1, 2, 3 and 4. They are located on the top of the dielectric carrier substrate 5 and are designed as microstrip lines. The ring 6 of the ring hybrid consists of a closed slot line on the underside of the carrier substrate 5. The connecting arms 1, 2, 3 and 4 cross the ring 6 vertically in the coupling area. The connection arms 1, 2, 3 and 4 are distributed over the circumference of the ring 6, which has a circumference of 3/2 λ, as in a conventional 180 ° ring hybrid; i.e. the distance between two connecting arms - 1 and 3 - on the circumference of the ring 6 is 3/4 λ and the further connecting arms - and 4 - are each at a distance of λ / 4 on the circumference of the ring 6 from neighboring connecting arms. The one line ends of the connection arms 1, 2 and 3 protrude by an λ / 4 piece into the ring area and thus ensure a suitable transformation in the coupling area of the slot line and the microstrip line. The line lengths λ / 4, 3/4 λ, 3/2 λ can each be multiplied by a factor n (n = 1, 2, 3, ...). The connection arm 4, which is preferably connected to an absorber, can be designed in various ways. Either both ends of the line on either side of the ring crossover can protrude into the ring area by one λ / 4 line section or project outwards from it, or, as shown in FIG Ring area protrude outwards, whereas the other end of the line through a rivet 9 with the conductive layer 7, cf. Fig. 2, is connected to the underside of the carrier substrate 5 and thus forms an absorber. To compensate for series inductances of the absorber, the connection arm 4 is connected to a parallel capacitance 10 in microstrip technology on the side projecting into the ring area.

In Fig. 2 ist das Ringhybrid im Schnitt dargestellt. Die Schlitzleitung 6 ist in die leitfähige Schicht 7 eingebettet. Die Breite b des ringförmigen Schlitzes weist zur Breite a der Microstrip-Leitung das bei 180°-Ringhybriden bekannte Verhältnis von: a : b = √2 : 1 auf.In Fig. 2 the ring hybrid is shown in section. The slot line 6 is embedded in the conductive layer 7. The width b of the annular slot and the width a of the microstrip line have the ratio of: a: b = √2: 1 known for 180 ° ring hybrids.

Ein Ringhybrid nach Fig. 1, das für eine Mittenfrequenz von 6 GHz konzipiert wurde, erreichte eine relative Bandbreite von 15%. Den Wellenwiderstand der Microstrip-Leitung wählt man vorzugsweise zu 50 Ω. Für die Schlitzleitung resultiert daraus ein Wellenwiderstand von 71 Q.1, which was designed for a center frequency of 6 GHz, achieved a relative bandwidth of 15%. The characteristic impedance of the microstrip line is preferably chosen to be 50 Ω. This results in a characteristic impedance of 71 Q for the slot line.

Im bisherigen Ausführungsbeispiel wurde nur ein 180°-Ringhybrid dargestellt. Fig. zeigt ein Ausführungsbeispiel für ein 900-Ringhybrid. Die Anschlussarme 1, 2, 3 und 4 sind auf dem Umfang des in Schlitzleitungstechnik ausgeführten Ringes 6 jeweils im Abstand von λ/4 verteilt. Die Anschlussarme kreuzen den Ring 6 wieder senkrecht. Auch ragen die Anschlussarme 1, 2 und 3 um jeweils ein λ/4-Stück in den Ringbereich hinein. Der Wellenwiderstand der Streifenleitungen 1, 2, 3 und 4 sei Zo, beispielsweise 50 Ω. Der Ring 6 in Schlitzleitungstechnik auf der Unterseite des Trägersubstrates 5 weist Schlitzleitungen mit verschiedenen Breiten auf. Zwischen den Überkreuzungen der Anschlussarme 1 und 2 sowie 3 und 4 ist die Breite b1 der Schlitzleitung so gewählt, dass sie einen Wellenwiderstand von

Figure imgb0001
aufweist, V2 beispielsweise 35 Ω. Zwischen den Anschlussarmen 2 und 4 sowie 1 und 3 ist die Breite b2 so gewählt, dass sie einen Wellenwiderstand von Zo, also beispielsweise 50 Ω aufweist. Im Bereich der Kreuzungen können wie zuvor Abstimmelemente angebracht sein.In the previous embodiment, only a 180 ° ring hybrid was shown. Fig. Shows an embodiment for a 90 0 ring hybrid. The connection arms 1, 2, 3 and 4 are distributed on the circumference of the ring 6, which is constructed using slot line technology, each at a distance of λ / 4. The connecting arms cross the ring 6 again vertically. The connecting arms 1, 2 and 3 also project into the ring area by one λ / 4 piece each. Let the wave resistance of the strip lines 1, 2, 3 and 4 be Z o , for example 50 Ω. The ring 6 in slot line technology on the underside of the carrier substrate 5 has slot lines with different widths. Between the crossings of the connection arms 1 and 2 as well as 3 and 4, the width b1 of the slot line is selected so that that they have a wave impedance of
Figure imgb0001
 V 2, for example 35 Ω. Between the connection arms 2 and 4 and 1 and 3, the width b2 is selected so that it has a characteristic impedance of Z o , for example 50 Ω. As before, tuning elements can be attached in the area of the intersections.

Claims (5)

1. Microwave ring hybrid whose four connecting arms (1, 2, 3, 4) are configured in microstrip technology on one side of a dielectric carrier substrate (5), with the ring (6) of the microwave ring hybrid being composed of a closed slit line formed of a slit in a conductive layer (7) which is disposed on the other side of the carrier substrate (5) and is high frequency coupled with the microstrip lines by way of perpendicular cross-overs, characterized in that the microstrip lines of three connecting arms (1, 2, 3) forming input/output ports project without load into the ring region by a section of λ/4; that, in order to form a 180° ring hybrid, the four connecting arms (1, 2, 3, 4) are distributed with respect to the ring (6) in such a manner that three arc sections of n λ/4 (n = 1, 2, 3, ...) are formed and one arc section of n · 3λ/4 is formed between the 0° input arm and the 180° arm; and that the fourth decoupled connecting arm (4) is configured as an absorber for the energy returning from the input/output ports.
2. Microwave ring hybrid whose four connecting arms (1, 2, 3, 4) are configured in microstrip technology on one side of a dielectric carrier substrate (5), with the ring (6) of the microwave ring hybrid being composed of a closed slit line formed of a slit in a conductive layer (7) which is disposed on the other side of the carrier substrate (5) and is high frequency coupled with the microstrip lines by way of perpendicular cross-overs, characterized in thatthe microstrip lines of three connecting arms (1, 2, 3) forming input/output ports project without load into the ring region by a section of λI4; that, in order to form a 90° ring hybrid, the connecting arms (1, 2, 3, 4) are distributed with respect to the ring (6) in such a manner that arc sections of n · λ/4 (n = 1, 2, 3, ...) are formed between the connecting arms; and that the fourth decoupled connecting arm (4) is configured as an absorber for the energy returning from the input/ output ports.
3. Microwave ring hybrid according to claim 1 or 2, characterized in that one end of the microstrip line of the fourth connecting arm (4) projects into the ring region by a section of λI4 and, at its other end, the microstrip line projects outwardly from the ring region by a section of λ/4.
4. Microwave ring hybrid according to claim 1 or 2, characterized in that one end of the microstrip line of the fourth connecting arm (4) is connected with the conductive layer (7) on the other side of the carrier substrate (5) and, at its other end, the microstrip line projects outwardly from the ring region by a section of λ/4.
5. Microwave ring hybrid according to one of claims 1 to 4, characterized in that tuning elements (8) are provided in the region where the ring (6) configured as a slit line crosses over the microstrip lines of the connecting arms (1, 2, 3, 4).
EP83111585A 1982-12-30 1983-11-19 Microwave hybrid ring coupling device Expired EP0114958B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3248641 1982-12-30
DE19823248641 DE3248641A1 (en) 1982-12-30 1982-12-30 MICROWAVE RING HYBRID

Publications (2)

Publication Number Publication Date
EP0114958A1 EP0114958A1 (en) 1984-08-08
EP0114958B1 true EP0114958B1 (en) 1988-05-11

Family

ID=6182175

Family Applications (1)

Application Number Title Priority Date Filing Date
EP83111585A Expired EP0114958B1 (en) 1982-12-30 1983-11-19 Microwave hybrid ring coupling device

Country Status (4)

Country Link
US (1) US4613834A (en)
EP (1) EP0114958B1 (en)
CA (1) CA1215752A (en)
DE (2) DE3248641A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3741789C1 (en) * 1987-12-10 1989-02-02 Ant Nachrichtentech 180@ microwave hybrid
US5563558A (en) * 1995-07-21 1996-10-08 Endgate Corporation Reentrant power coupler
DE19639369A1 (en) * 1996-09-25 1998-03-26 Philips Patentverwaltung Circuit board
US6737883B2 (en) * 2001-12-17 2004-05-18 Intel Corporation Transmission mode signaling with a slot
US6822531B2 (en) * 2002-07-31 2004-11-23 Agilent Technologies, Inc. Switched-frequency power dividers/combiners

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176506B (en) * 1952-03-05 Fujitsu Ltd GAS DISCHARGE DISPLAY DEVICE.
US3772599A (en) * 1972-04-17 1973-11-13 Rca Corp Microwave double balanced mixer
US3946339A (en) * 1974-11-29 1976-03-23 Hughes Aircraft Company Slot line/microstrip hybrid
DE2607634A1 (en) * 1976-02-25 1977-09-01 Licentia Gmbh Microstrip coupling to slotted conductor - uses microstrip branches for power dividing to ensure optimum energy transfer
JPS54101615A (en) * 1978-01-27 1979-08-10 Mitsubishi Electric Corp Balanced mixer
JPS5797204A (en) * 1980-12-08 1982-06-16 Nec Corp Slot line hybrid ring

Also Published As

Publication number Publication date
CA1215752A (en) 1986-12-23
DE3376599D1 (en) 1988-06-16
DE3248641A1 (en) 1984-07-12
US4613834A (en) 1986-09-23
EP0114958A1 (en) 1984-08-08

Similar Documents

Publication Publication Date Title
DE2631026C2 (en)
DE2645499A1 (en) ELECTRICAL CABLE AND INDUCTIVELY COUPLED CABLE CONNECTION OR INDUCTIVELY COUPLED CABLE ARRANGEMENT
DE102016216702A1 (en) amplifier
DE10207957A1 (en) Printed circuit board has capacitors mounted on metallization layers on opposite sides of circuit board
EP0114958B1 (en) Microwave hybrid ring coupling device
EP0285743A2 (en) Linear array of half wave dipoles with quarter wave dipoles at the ends
DE2811521A1 (en) SYMMETRIZED BANDLINE DIPOLE
DE3247425C2 (en)
EP0057253A2 (en) System carrier tape with a plurality of system carriers for integrated circuits
DE112020006270B4 (en) FREQUENCY SELECTIVE SURFACE AND ELECTROMAGNETIC WAVE ABSORBERS
DE2260240A1 (en) HIGH FREQUENCY LINE AND CROSS MEMBER FORMED WITH IT
DE3445017C2 (en) Broadband balancing device
DE3621211A1 (en) PHASE DIFFERENTIAL MODULATION TURN LADDER
DE2426375C3 (en) Surface acoustic wave arrangement
DE19934671C1 (en) Planar antenna
DE3238806C2 (en) Balancing device
DE3140407A1 (en) MICROWAVE DETECTOR ARRANGEMENT
DE8236874U1 (en) MICROWAVE RING HYBRID
EP0054645B1 (en) Pin diode switch
DE3018307C2 (en) Ring modulator
EP0302479B1 (en) Strip line coupling arrangement
DE8214629U1 (en) BRIDGE FOR HF ACTIVE ELEMENTS
EP0518310B1 (en) High-frequency power divider/combiner circuit
DE2206350C3 (en) Damping arrangement
DE19726384C2 (en) Absorber for high frequency signals

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): DE FR GB IT NL

17P Request for examination filed

Effective date: 19850117

17Q First examination report despatched

Effective date: 19860827

R17C First examination report despatched (corrected)

Effective date: 19870324

ITF It: translation for a ep patent filed
GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB IT NL

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)
REF Corresponds to:

Ref document number: 3376599

Country of ref document: DE

Date of ref document: 19880616

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: GB

Ref legal event code: 746

REG Reference to a national code

Ref country code: FR

Ref legal event code: DL

ITTA It: last paid annual fee
REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

REG Reference to a national code

Ref country code: FR

Ref legal event code: RR

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 19941130

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 19951031

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 19951117

Year of fee payment: 13

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Effective date: 19960601

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 19960601

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Effective date: 19961119

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 19970124

Year of fee payment: 14

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 19961119

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Effective date: 19970731

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980801