EP0114958A1 - Microwave hybrid ring coupling device - Google Patents

Microwave hybrid ring coupling device Download PDF

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Publication number
EP0114958A1
EP0114958A1 EP83111585A EP83111585A EP0114958A1 EP 0114958 A1 EP0114958 A1 EP 0114958A1 EP 83111585 A EP83111585 A EP 83111585A EP 83111585 A EP83111585 A EP 83111585A EP 0114958 A1 EP0114958 A1 EP 0114958A1
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EP
European Patent Office
Prior art keywords
ring
line
microwave
microstrip
connecting arms
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP83111585A
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German (de)
French (fr)
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EP0114958B1 (en
Inventor
Wilfried Dipl.-Ing. Heine
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Bosch Telecom GmbH
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ANT Nachrichtentechnik GmbH
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Publication of EP0114958A1 publication Critical patent/EP0114958A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/19Conjugate devices, i.e. devices having at least one port decoupled from one other port of the junction type
    • H01P5/22Hybrid ring junctions
    • H01P5/222180° rat race hybrid rings

Definitions

  • the invention relates to a microwave ring hybrid according to the preamble of claim 1.
  • a microwave ring hybrid is known, for example, from Siemens magazine 48 (1974), supplement “News transmission technology", page 162, Figure 8.
  • connection arms are galvanically coupled, so that additional networks for galvanically decoupling the connection arms, such as chip capacitors or finger couplers, for example, must be additionally provided when using the ring hybrid for parallel connection of two amplifier modules. These additional components can disturb the symmetry and adaptation of the ring hybrid and thus cause reflections and losses.
  • the object of the invention is therefore to design the microwave ring hybrid according to the preamble of claim 1 so that all connecting arms galvanically ent from each other are coupled without the use of additional components. This object is achieved by the characterizing feature of patent claim 1.
  • the connecting arms of the ring hybrid are designated by the reference numerals 1, 2, 3 and 4. They are located on the top of the dielectric carrier substrate 5 and are designed as microstrip lines.
  • the ring 6 of the ring hybrid consists of a closed slot line on the underside of the carrier substrate 5.
  • the connecting arms 1, 2, 3 and 4 cross the ring 6 vertically in the coupling area.
  • connection arms 1, 2, 3 and 4 are distributed over the circumference of the ring 6, which has a circumference of 3/2 X as in a conventional 180 ° ring hybrid; ie the distance between two connecting arms - 1 and 3 - on the circumference of the ring 6 is 3/4 X and the other connecting arms - 2 and 4 - are each at a distance of ⁇ / 4 on the circumference of the ring 6 from adjacent connecting arms.
  • the one line ends of the connection arms 1, 2 and 3 protrude a ⁇ / 4 piece into the ring area and thus ensure a suitable transformation in the coupling area of the slot line and the microstrip line.
  • connection arm 4 which is preferably connected to an absorber, can be designed in various ways. Either both ends of the line on either side of the ring crossover can protrude into the ring area by one ⁇ / 4 line section or project outwards, or, as shown in FIG. 1, a line end can be extended by an X / 4 section from Ring area protrude outwards, whereas the other end of the line through a rivet 9 with the conductive layer 7, cf. Fig. 2, on the underside of the carrier substrates 5 is connected and thus forms an absorber. To compensate for series inductances of the absorber, the connection arm 4 is connected to a parallel capacitance 10 in microstrip technology on the side projecting into the ring area.
  • Fig. 2 the ring hybrid is shown in section.
  • the slot line 6 is embedded in the conductive layer 7.
  • the wave resistance of the microstrip line is preferably chosen to be 50 Q. For the slot line, this results in a wave resistance of 71 ⁇ .
  • FIG. 3 shows an exemplary embodiment for a 90 ° ring hybrid.
  • the connecting arms 1, 2, 3 and 4 are distributed on the circumference of the ring 6, which is designed in slot line technology, at a distance of ⁇ / 4.
  • the connecting arms cross the ring 6 again vertically.
  • the connecting arms 1, 2 and 3 also project into the ring area by one ⁇ / 4 piece each.
  • the wave impedance of the strip lines 1, 2, 3 and 4 is Z 0 , for example 50 Q.
  • the ring 6 using slot line technology on the underside of the carrier substrate 5 has slot lines with different widths.
  • the width b1 of the slot line is selected so that it has a characteristic impedance of 0 / ⁇ 2, for example 35Q.
  • the width b2 is chosen so that it has a characteristic impedance of Z o , for example 50 Q.
  • tuning elements can be attached in the area of the intersections.

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  • Waveguides (AREA)

Abstract

Ein Mikrowellenringhybrid auf einem dielektrischen Trägersubstrat (5) weist Anschlußarme (1, 2, 3, 4) in Microstrip-Technik auf. Der Ring (6) des Hybrids besteht aus einer Schlitzleitung, die in eine leitfähige Schicht auf der den Anschlußarmen (1, 2, 3, 4) abgewandten Seite des Trägersubstrates (5) eingelassen ist.A microwave ring hybrid on a dielectric carrier substrate (5) has connecting arms (1, 2, 3, 4) using microstrip technology. The ring (6) of the hybrid consists of a slot line which is embedded in a conductive layer on the side of the carrier substrate (5) facing away from the connecting arms (1, 2, 3, 4).

Description

Die Erfindung betrifft ein Mikrowellenringhybrid gemäß dem Oberbegriff des Patentanspruches 1. Ein solches Ringhybrid ist beispielsweise bekannt aus Siemens-Zeitschrift 48 (1974) Beiheft "Nachrichten-übertragungstechnik", Seite 162, Bild 8.The invention relates to a microwave ring hybrid according to the preamble of claim 1. Such a ring hybrid is known, for example, from Siemens magazine 48 (1974), supplement "News transmission technology", page 162, Figure 8.

Dieses Ringhybrid ist komplett in Microstrip-Technik auf einer Seite eines Keramiksubstrates ausgeführt. Die Anschlußarme sind galvanisch gekoppelt, sodaß beispielsweise bei Verwendung des Ringhybrids zur Parallelschaltung zweier Verstärkermodule zusätzliche Netzwerke zur galvanischen Entkopplung der Anschlußarme, wie etwa Chip-Kondensatoren oder Fingerkoppler, zusätzlich vorgesehen sein müssen. Diese zusätzlichen Bauelemente können die Symmetrie und Anpassung des Ringhybrids stören und damit Reflexionen und Verluste hervorrufen.This ring hybrid is completely microstriped on one side of a ceramic substrate. The connection arms are galvanically coupled, so that additional networks for galvanically decoupling the connection arms, such as chip capacitors or finger couplers, for example, must be additionally provided when using the ring hybrid for parallel connection of two amplifier modules. These additional components can disturb the symmetry and adaptation of the ring hybrid and thus cause reflections and losses.

Aufgabe der Erfindung ist es daher, das Mikrowellenringhybrid gemäß dem Oberbegriff des Patentanspruches 1 so auszubilden, daß alle Anschlußarme galvanisch voneinander entkoppelt sind ohne Verwendung zusätzlicher Bauelemente. Diese Aufgabe wird durch das kennzeichnende Merkmal des Patentanspruchs 1 gelöst.The object of the invention is therefore to design the microwave ring hybrid according to the preamble of claim 1 so that all connecting arms galvanically ent from each other are coupled without the use of additional components. This object is achieved by the characterizing feature of patent claim 1.

Kopplungen zwischen Schlitzleitungen und Microstrip-Leitungen sind an sich bekannt, beispielsweise aus DE - 0δ 26 07634. Dieser Veröffentlichung ist aber keine Anregung zu entnehmen, wie ein Mikrowellenringhybrid bei galvanischer Entkopplung aller Anschlußarme ohne Zusatzmaßnahmen realisiert werden könnte.Couplings between slot lines and microstrip lines are known per se, for example from DE - 0δ 26 07634. However, this publication does not give any suggestion as to how a microwave ring hybrid could be implemented without additional measures with galvanic decoupling of all connecting arms.

In den Unteransprüchen sind vorteilhafte Ausgestaltungen der Erfindung aufgezeigt.Advantageous embodiments of the invention are shown in the subclaims.

Erhebliche Vorteile der Erfindung sind insbesondere darin zu sehen, daß sich trotz der galvanischen Entkopplung aller Anschlußarme sämtliche Ein- und Ausgänge des Ringhybrids auf einer Seite des Trägersubstrates befinden. Dadurch können die mit dem Ringhybrid zu verbindenden Baugruppen alle auf einer Seite des Trägersubstrates angeordnet werden. Die Schlitzleitung, die wegen ihres ungünstigen Abstrahlverhaltens nicht mit einstrahlungsempfindlichen Baugruppen gekoppelt sein darf, befindet sich auf der diesen Baugruppen abgewandten Trägersubstratseite und stört somit kaum. Ein weiterer Vorteil ist darin zu sehen, daß die Trägersubstratseite auf der sich die Schlitzleitung befindet, bis auf die "Störstelle - Schlitzleitung" eine geschlossene leitfähige Schicht trägt und so Abstrahlungen der mit dem Ringhybrid verbundenen Baugruppen in Richtung Trägersubstrat abschirmt. Benachbarte Mikrowellenbauteile können daher, ohne wesentlichen Störstrahlungen ausgesetzt zu sein, in die Nähe dieser leitfähigen Schicht gebracht werden. Die Packungsdichte von Mikrowellenschaltungen kann somit wesentlich erhöht werden.Significant advantages of the invention can be seen in particular in that, despite the galvanic decoupling of all connecting arms, all the inputs and outputs of the ring hybrid are located on one side of the carrier substrate. As a result, the assemblies to be connected to the ring hybrid can all be arranged on one side of the carrier substrate. The slot line, which must not be coupled to radiation-sensitive assemblies because of its unfavorable radiation behavior, is located on the carrier substrate side facing away from these assemblies and therefore hardly interferes with it. Another advantage can be seen in the fact that the carrier substrate side on which the slot line is located carries a closed conductive layer except for the "fault location - slot line" and thus shields radiation from the modules connected to the ring hybrid in the direction of the carrier substrate. Adjacent microwave components can therefore be brought into the vicinity of this conductive layer without being exposed to significant interference radiation. The packing density of microwave circuits can thus be increased significantly.

Anhand der Zeichnungen wird die Erfindung nun näher erläutert.The invention will now be explained in more detail with reference to the drawings.

Es zeigen

  • Fig. 1 eine Aufsicht auf ein 1800 - Ringhybrid nach der Erfindung,
  • Fig. 2 eine Schnittzeichnung hierzu und
  • Fig. 3 ein 90° - Ringhybrid.
Show it
  • 1 is a plan view of a 180 0 - ring hybrid according to the invention,
  • Fig. 2 is a sectional drawing of this and
  • 3 shows a 90 ° ring hybrid.

In Fig. 1 sind die Anschlußarme des Ringhybrids mit den Bezugszeichen 1, 2, 3 und 4 bezeichnet. Sie befinden sich auf der Oberseite des aielektrischen Trägersubstrates 5 und sind als Microstrip-Leitungen ausgeführt. Der Ring 6 des Ringhybrids besteht aus einer geschlossenen Schlitzleitung auf der Unterseite des Trägersubstrates 5. Die Anschlußarme 1, 2, 3 und 4 kreuzen den Ring 6 im Koppelbereich senkrecht. Die Anschlußarme 1, 2, 3 und 4 sind auf dem Umfang des Ringes 6, der insgesamt einen Umfang von 3/2 X aufweist, wie bei einem herkömmlichen 180° - Ringhybrid verteilt; d.h. der Abstand zweier Anschlußarme - 1 und 3 - auf dem Umfang des Ringes 6 beträgt 3/4 X und die weiteren Anschlußarme - 2 und 4 - haben jeweils einen Abstand von λ/4 auf dem Umfang des Ringes 6 zu benachbarten Anschlußarmen. Die einen Leitungsenden der Anschlußarme 1, 2 und 3 ragen um ein λ/4 - Stück in den Ringbereich hinein und sorgen damit für eine geeignete Transformation im Koppelbereich von Schlitzleitung und Microstrip-Leitung. Die Leitungslängen λ/4, 3/ 4λ, 3/2 λ können jeweils mit einem Faktor n (n = 1, 2, 3, ...) multipliziert sein. Die Ausgestaltung des vorzugsweise mit einem Absorber beschalteten Anschlußarmes 4 kann auf verschiedene Weise geschehen. Entweder können beide Leitungsenden diesseits und jenseits der Ringüberkreuzung um jeweils ein λ/4 - Leitungsstück in den Ringbereich hinein- bzw. von diesem nach außen wegragen oder es kann, wie in Fig. 1 dargestellt, ein Leitungsende um ein X/4 -Stück vom Ringbereich nach außen ragen, wohingegen das andere Leitungsende durch einen Niet 9 mit der leitfähigen Schicht 7, vgl. Fig. 2, auf der Unterseite des Trägersubstrates 5 verbunden ist und somit einen Absorber bildet. Zur Kompensation von Serieninduktivitäten des Absorbers ist der Anschlußarm 4 auf der in den Ringbereich ragenden Seite mit einer Parallelkapazität 10 in Microstrip-Technik beschaltet.In Fig. 1, the connecting arms of the ring hybrid are designated by the reference numerals 1, 2, 3 and 4. They are located on the top of the dielectric carrier substrate 5 and are designed as microstrip lines. The ring 6 of the ring hybrid consists of a closed slot line on the underside of the carrier substrate 5. The connecting arms 1, 2, 3 and 4 cross the ring 6 vertically in the coupling area. The connection arms 1, 2, 3 and 4 are distributed over the circumference of the ring 6, which has a circumference of 3/2 X as in a conventional 180 ° ring hybrid; ie the distance between two connecting arms - 1 and 3 - on the circumference of the ring 6 is 3/4 X and the other connecting arms - 2 and 4 - are each at a distance of λ / 4 on the circumference of the ring 6 from adjacent connecting arms. The one line ends of the connection arms 1, 2 and 3 protrude a λ / 4 piece into the ring area and thus ensure a suitable transformation in the coupling area of the slot line and the microstrip line. The line lengths λ / 4, 3 / 4λ, 3/2 λ can each be multiplied by a factor n (n = 1, 2, 3, ...). The connection arm 4, which is preferably connected to an absorber, can be designed in various ways. Either both ends of the line on either side of the ring crossover can protrude into the ring area by one λ / 4 line section or project outwards, or, as shown in FIG. 1, a line end can be extended by an X / 4 section from Ring area protrude outwards, whereas the other end of the line through a rivet 9 with the conductive layer 7, cf. Fig. 2, on the underside of the carrier substrates 5 is connected and thus forms an absorber. To compensate for series inductances of the absorber, the connection arm 4 is connected to a parallel capacitance 10 in microstrip technology on the side projecting into the ring area.

In Fig. 2 ist das Ringhybrid im Schnitt dargestellt. Die Schlitzleitung 6 ist in die leitfähige Schicht 7 eingebettet. Die Breite b des ringfömrigen Schlitzes weist zur Breite a der Microstrip-Leitung das bei 180 - Ringhybriden bekannte Verhältnis von: a:b = √2:1 auf.In Fig. 2 the ring hybrid is shown in section. The slot line 6 is embedded in the conductive layer 7. The width b of the annular slot to the width a of the microstrip line has the ratio of: a: b = √2: 1 known for 180 ring hybrids.

Ein Ringhybrid nach Fig. 1, das für eine Mittenfrequenz von 6 GHz konzipiert wurde, erreichte eine relative Bandbreite von 15%. Den Wellenwiderstand der Microstrip-Leitung wählt man vorzugsweise zu 50 Q. Für die Schlitzleitung resultiert daraus ein Wellenwiderstand von 71 Ω.1, which was designed for a center frequency of 6 GHz, achieved a relative bandwidth of 15%. The wave resistance of the microstrip line is preferably chosen to be 50 Q. For the slot line, this results in a wave resistance of 71 Ω.

Im bisherigen Ausführungsbeispiel wurde nur ein 180 - Ringhybrid dargestellt. Fig. 3 zeigt ein Ausführungsbeispiel für ein 90° - Ringhybrid. Die Anschlußarme 1, 2, 3 und 4 sind auf dem Umfang des in Schlitzleitungstechnik ausgeführten Ringes 6 jeweils im Abstand von λ/4 verteilt. Die Anschlußarme kreuzen den Ring 6 wieder senkrecht. Auch ragen die Anschlußarme 1, 2 und 3 um jeweils ein λ/4-Stück in den Ringbereich hinein. Der Wellenwiderstand der Streifenleitungen 1, 2, 3 und 4 sei Z0, beispielsweise 50 Q. Der Ring 6 in Schlitzleitungstechnik auf der Unterseite des Trägersubstrates 5 weist Schlitzleitungen mit verschiedenen Breiten auf. Zwischen den überkreuzungen der Anschlußarme 1 und 2 sowie 3 und 4 ist die Breite b1 der Schlitzleitung so gewählt, daß sie einen Wellenwiderstand von 0/√2 aufweist, beispielsweise 35Q . Zwischen den Anschlußarmen 2 und 4 sowie 1 und 3 ist die Breite b2 so gewählt, daß sie einen Wellenwiderstand von Zo, also beispielsweise 50 Q aufweist. Im Bereich der Kreuzungen können wie zuvor Abstimmelemente angebracht sein.In the previous embodiment, only a 180-ring hybrid was shown. 3 shows an exemplary embodiment for a 90 ° ring hybrid. The connecting arms 1, 2, 3 and 4 are distributed on the circumference of the ring 6, which is designed in slot line technology, at a distance of λ / 4. The connecting arms cross the ring 6 again vertically. The connecting arms 1, 2 and 3 also project into the ring area by one λ / 4 piece each. The wave impedance of the strip lines 1, 2, 3 and 4 is Z 0 , for example 50 Q. The ring 6 using slot line technology on the underside of the carrier substrate 5 has slot lines with different widths. Between the crossings of the connecting arms 1 and 2 as well as 3 and 4, the width b1 of the slot line is selected so that it has a characteristic impedance of 0 / √2, for example 35Q. Between the connecting arms 2 and 4 and 1 and 3, the width b2 is chosen so that it has a characteristic impedance of Z o , for example 50 Q. As before, tuning elements can be attached in the area of the intersections.

Claims (6)

1. Mikrowellenringhybrid, dessen Anschlußarme (1, 2, 3, 4) in Microstrip-Technik auf einer Seite eines dielektrischen Trägersubstrates (5) ausgeführt sind, dadurch gekennzeichnet, da3 jer Ring (6) des Mikrowellenringhybrids aus einer in sich geschlossenen Schlitzleitung, gebildet von einem Schlitz in einer leitfähigen Schicht (7) auf der anderen Seite des Trägersubstrates (5), besteht, welche hochfrequenzmäßig mit den Microstrip-Leitungen gekoppelt ist.1. microwave ring hybrid, the connecting arms (1, 2, 3, 4) are designed in microstrip technology on one side of a dielectric carrier substrate (5), characterized in that the ring (6) of the microwave ring hybrid is formed from a self-contained slot line of a slot in a conductive layer (7) on the other side of the carrier substrate (5), which is radio frequency coupled to the microstrip lines. 2. Mikrowellenringhybrid nach Anspruch 1, dadurch gekennzeichnet, daß sich die hochfrequenzmäßig koppelnden Teile der als Microstrip-Leitungen ausgebildeten Anschlußarme (1, 2, 3, 4) und dem als Schlitzleitung ausgebildeten Ring (6) senkrecht kreuzen.2. Microwave ring hybrid according to claim 1, characterized in that the high-frequency coupling parts of the connecting arms designed as microstrip lines (1, 2, 3, 4) and the ring (6) designed as a slotted line cross perpendicularly. 3. Mikrowellenringhybrid nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Microstrip-Leitungen zumindest zweier Anschlußarme (1, 2, 3) um ein λ/4-Stück in den Ringbereich hineinragen.3. microwave ring hybrid according to claim 1 or 2, characterized in that the microstrip lines at least two connecting arms (1, 2, 3) protrude by a λ / 4 piece in the ring area. 4. Mikrowellenringhybrid nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Microstrip-Leitung eines Anschlußarmes (4) am einen Leitungsende um ein X/4-Stück in den Ringbereich hineinragt und am anderen Leitungsende um ein λ/4-Stück vom Ringbereich nach außen ragt.4. microwave ring hybrid according to claim 1 or 2, characterized in that the microstrip line of a connecting arm (4) protrudes at one line end by an X / 4 piece into the ring area and at the other line end by a λ / 4 piece from the ring area protrudes outside. 5. Mikrowellenringhybrid nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Microstrip-Leitung eines Anscnlußarmes (4) am einen Leitungsende mit der leitfähigen Schicht (7) auf der anderen Seite des Trägersubstrates (5) verbunden ist und daß die Microstrip-Leitung am anderen Leitungsende um ein λ/4-Stück vom Ringbereich nach außen ragt.5. microwave ring hybrid according to claim 1 or 2, characterized in that the microstrip line of a connecting arm (4) is connected at one end of the line to the conductive layer (7) on the other side of the carrier substrate (5) and that the microstrip line on the other end of the line protrudes outwards by a λ / 4 piece from the ring area. 6. Mikrowellenringhybrid nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß im Bereich der Kreuzungen des als Schlitzleitung ausgebildeten Ringes (6) mit den Microstrip-Leitungen der Anschlußarme (1, 2, 3, 4) Abstimmelemente (8) vorhanden sind.6. microwave ring hybrid according to one of claims 1 to 5, characterized in that in the area of the intersections of the ring designed as a slot line (6) with the microstrip lines of the connecting arms (1, 2, 3, 4) tuning elements (8) are present.
EP83111585A 1982-12-30 1983-11-19 Microwave hybrid ring coupling device Expired EP0114958B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3248641 1982-12-30
DE19823248641 DE3248641A1 (en) 1982-12-30 1982-12-30 MICROWAVE RING HYBRID

Publications (2)

Publication Number Publication Date
EP0114958A1 true EP0114958A1 (en) 1984-08-08
EP0114958B1 EP0114958B1 (en) 1988-05-11

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EP83111585A Expired EP0114958B1 (en) 1982-12-30 1983-11-19 Microwave hybrid ring coupling device

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US (1) US4613834A (en)
EP (1) EP0114958B1 (en)
CA (1) CA1215752A (en)
DE (2) DE3248641A1 (en)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
DE3741789C1 (en) * 1987-12-10 1989-02-02 Ant Nachrichtentech 180@ microwave hybrid

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
US5563558A (en) * 1995-07-21 1996-10-08 Endgate Corporation Reentrant power coupler
DE19639369A1 (en) * 1996-09-25 1998-03-26 Philips Patentverwaltung Circuit board
US6737883B2 (en) * 2001-12-17 2004-05-18 Intel Corporation Transmission mode signaling with a slot
US6822531B2 (en) * 2002-07-31 2004-11-23 Agilent Technologies, Inc. Switched-frequency power dividers/combiners

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Publication number Priority date Publication date Assignee Title
US2749521A (en) * 1952-03-05 1956-06-05 Itt Microwave coupling arrangements
US3772599A (en) * 1972-04-17 1973-11-13 Rca Corp Microwave double balanced mixer
US3946339A (en) * 1974-11-29 1976-03-23 Hughes Aircraft Company Slot line/microstrip hybrid

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DE2607634A1 (en) * 1976-02-25 1977-09-01 Licentia Gmbh Microstrip coupling to slotted conductor - uses microstrip branches for power dividing to ensure optimum energy transfer
JPS54101615A (en) * 1978-01-27 1979-08-10 Mitsubishi Electric Corp Balanced mixer
JPS5797204A (en) * 1980-12-08 1982-06-16 Nec Corp Slot line hybrid ring

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Publication number Priority date Publication date Assignee Title
US2749521A (en) * 1952-03-05 1956-06-05 Itt Microwave coupling arrangements
US3772599A (en) * 1972-04-17 1973-11-13 Rca Corp Microwave double balanced mixer
US3946339A (en) * 1974-11-29 1976-03-23 Hughes Aircraft Company Slot line/microstrip hybrid

Non-Patent Citations (2)

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Title
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Patent Abstracts of Japan Band 6, Nr. 182, 18. September 1982 & JP-A-57-97204 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3741789C1 (en) * 1987-12-10 1989-02-02 Ant Nachrichtentech 180@ microwave hybrid

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EP0114958B1 (en) 1988-05-11
CA1215752A (en) 1986-12-23
DE3376599D1 (en) 1988-06-16
DE3248641A1 (en) 1984-07-12
US4613834A (en) 1986-09-23

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