EP0092137B1 - Résistances en constantes reparties pour charges à forte dissipation en hyperfréquence - Google Patents

Résistances en constantes reparties pour charges à forte dissipation en hyperfréquence Download PDF

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Publication number
EP0092137B1
EP0092137B1 EP83103511A EP83103511A EP0092137B1 EP 0092137 B1 EP0092137 B1 EP 0092137B1 EP 83103511 A EP83103511 A EP 83103511A EP 83103511 A EP83103511 A EP 83103511A EP 0092137 B1 EP0092137 B1 EP 0092137B1
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EP
European Patent Office
Prior art keywords
contact
input
series
resistance layer
resistances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP83103511A
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German (de)
English (en)
French (fr)
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EP0092137A1 (fr
Inventor
Gérard Lapart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cables de Lyon SA
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Cables de Lyon SA
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Filing date
Publication date
Application filed by Cables de Lyon SA filed Critical Cables de Lyon SA
Publication of EP0092137A1 publication Critical patent/EP0092137A1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/24—Terminating devices
    • H01P1/26—Dissipative terminations
    • H01P1/268—Strip line terminations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/22—Attenuating devices
    • H01P1/227—Strip line attenuators

Definitions

  • the present invention relates to distributed constant resistors for loads with high microwave dissipation that can be used in the manufacture of attenuators or adapted loads operating in a frequency band extending up to 10 Gigahertz.
  • the surface resistance is proportional to the surface of the resistive layer.
  • the resistive layer used can be of the 1610 series from the Dupont de Nemours company whose characteristics vary from 10 ohm to one megohm for a sample of 5 mm in length, 2.5 mm in width and 24 micrometers in thickness (before passage in the oven).
  • the characteristic impedance of the attenuation circuit is proportional to the logarithm of the ratio of the thickness h of the dielectric to the width W of the strip and inversely proportional to the square root of the dielectric constant s.
  • a resistor in distributed constants R 1 in series and two resistors in constant constants 2R 2 in parallel arranged on either side of the resistor R 1 there is a resistor in distributed constants R 1 in series and two resistors in constant constants 2R 2 in parallel arranged on either side of the resistor R 1 .
  • the resistance R 1 has been in the form of a rectangle and its resistivity low.
  • the 2R 2 resistors in the form of rectangles also have a very high resistivity in the case of reduced attenuations.
  • On the upper face are arranged two ground connections (two metal strips) which join the edges of the substrate to the conductive metal layer disposed on the lower face.
  • the characteristic impedance is constant as well as the linear attenuation coefficient since the surface resistance R 1 is constant as well as the surface resistance R 2 .
  • the linear attenuation coefficient is thus constant from the input to the output of the attenuator. It follows that the power dissipated in each of the equal sections obtained by equidistant divisions of the length between the input E and the output S of the attenuator decreases from the input to the output.
  • the resistors according to the present invention overcome this drawback. These in fact dissipate the power in the form of heat uniformly on the outer surfaces of the layers, which allows greater dissipation of calorific power with dimensions equivalent to that of the prior art.
  • the subject of the invention is resistors in distributed constants for high microwave dissipation charges which comprise on one face of an insulating substrate a resistive layer forming a series resistance of low surface resistance and at least one resistive layer forming a parallel resistance of high surface resistance (in the case of reduced attenuation), the parallel resistance being in contact with a conductive metallized zone in contact by the edge of the substrate with a plate of conductive mass covering the other face of said substrate, characterized by the fact that the resistive layer. series is in the form of a sector of a circle whose external arc serves to receive the input power and of which at least one radius is juxtaposed with at least one parallel resistance also in the form of sector of a circle.
  • said series resistive layer has an increasing elementary linear resistance and said parallel resistive layer has a decreasing elementary linear resistance, the linear attenuation coefficient being progressively variable and increasing from the input so that the power dissipated is distributed uniformly over all of the resistive layers.
  • said resistors constitute an attenuator whose output produced in metallized contact is in contact with an internal arc of said series resistance near the center of the sector of the circle and opposite to the metallized input contact. in contact with said exterior.
  • said resistors constitute kill a suitable charge
  • the center of the series resistance circle sectors and parallel resistances is physically arranged on said substrate, the input of said charge being a metallized contact in contact with the external arc.
  • FIG. 4 represents a pellet 1 formed from an insulating substrate made of aluminum oxide (AI 2 0 3 ) or beryllium oxide (BeO), for example coated on the upper face in plan view with a resistive layer 3 in the form of circle sector.
  • the resistive layer according to a known technique, consists of a ruthenium oxide, an organic binder and glass particles in greater or lesser number depending on the resistivity which it is desired to obtain.
  • the resistivity of layer 3 must be low, for example 10 ohm for samples of 5 mm in length, 2.5 mm in width and 25 micrometers in thickness.
  • the layer 3 forms the equivalent of the series resistance R 1 with the difference, however, that it is formed of distributed elements and that it increases from the input E towards the output S of the attenuator (FIG. 5).
  • R 1 , R ' 1 , R " i , R"' 1 being the elementary series resistances of the four successive slices (for example) obtained by equal division of the radius of a circle.
  • an elementary resistance is proportional to the constant length of the resistive conductor (according to the radial arrow) and inversely proportional to the width of the resistive layer 3 which is progressively decreasing as one approaches the exit S .
  • the internal angle a of the sector of circle 3 can be approximately 0.5 radians.
  • the resistive layers 4 and / or 5 deposited for example by screen printing are in the form of sectors of a circle juxtaposed by the radii of a circle with the layer 3 and constitute an equivalent parallel resistance R 2 of high resistivity for example, 1 kiloohm for a sample of 5 mm long 2.5 mm wide and 25 micrometers thick (before going to the oven).
  • R 2 parallel resistance
  • R ' 2 , R " 2 , R"' 2 of successive equidistant slices between the input E and the output S of the attenuator are progressively decreasing values such as
  • the elementary resistance is proportional to its length (direction of the tangential arrow) which is progressively decreasing (from E to S) and inversely proportional to its width which is constant by assumption.
  • the internal angle ⁇ of all three sectors of a circle 3, 4 and 5 can be approximately 2.5 radians.
  • the attenuator of FIG. 4 also comprises input contacts E and output S electrically connected to the resistive layer 3.
  • the ground returns 6 and 7, the contacts E and S and the metal plate of the opposite face of the substrate are made of a metal such as gold or an alloy of silver and palladium.
  • the attenuation coefficient k proportional to the ratio of R 1 and R 2 is gradually increasing from the input E to the output S because of the inequalities (2) and (3).
  • the iterative impedance generally remains constant as a result of the constancy of the product R 1 R 2 .
  • dissipated power Pd n of the n th elementary section is equal to and that the coefficients k 1 ... k n-1 are less than the coefficient k n-1 of Figure 3 (relation (1)) it follows that the dissipated power of the n ia m e cell attenuator according to the invention is greater than the power dissipated in the n th cell of the attenuator according to the prior art.
  • the output power obtained can be the result of an attenuation of around thirty decibels compared to the input power.
  • the characteristic impedance can be adapted to 50 ohms.
  • the applications are in the field of attenuators and adapted loads in the frequency bands between 1 and 10 GHz.

Landscapes

  • Non-Reversible Transmitting Devices (AREA)
  • Non-Adjustable Resistors (AREA)
  • Attenuators (AREA)
EP83103511A 1982-04-16 1983-04-12 Résistances en constantes reparties pour charges à forte dissipation en hyperfréquence Expired EP0092137B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8206559 1982-04-16
FR8206559A FR2525383A1 (fr) 1982-04-16 1982-04-16 Resistances en constantes reparties pour charges a forte dissipation en hyperfrequence

Publications (2)

Publication Number Publication Date
EP0092137A1 EP0092137A1 (fr) 1983-10-26
EP0092137B1 true EP0092137B1 (fr) 1987-04-01

Family

ID=9273073

Family Applications (1)

Application Number Title Priority Date Filing Date
EP83103511A Expired EP0092137B1 (fr) 1982-04-16 1983-04-12 Résistances en constantes reparties pour charges à forte dissipation en hyperfréquence

Country Status (6)

Country Link
US (1) US4456894A (enrdf_load_stackoverflow)
EP (1) EP0092137B1 (enrdf_load_stackoverflow)
JP (1) JPS58188901A (enrdf_load_stackoverflow)
CA (1) CA1185667A (enrdf_load_stackoverflow)
DE (1) DE3370723D1 (enrdf_load_stackoverflow)
FR (1) FR2525383A1 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588970A (en) * 1984-01-09 1986-05-13 Hewlett-Packard Company Three section termination for an R.F. triaxial directional bridge
US4782320A (en) * 1986-11-03 1988-11-01 Vtc Incorporated Mesh network for laser-trimmed integrated circuit resistors
US4774492A (en) * 1986-12-03 1988-09-27 Vtc Inc Slotted integrated circuit resistor
FR2619253B1 (fr) * 1987-08-03 1990-01-19 Aerospatiale Dispositif pour le raccord de deux structures pour hyperfrequences, coaxiales et de diametres differents
US4827222A (en) * 1987-12-11 1989-05-02 Vtc Incorporated Input offset voltage trimming network and method
US4965538A (en) * 1989-02-22 1990-10-23 Solitron Devices, Inc. Microwave attenuator
JP3206543B2 (ja) * 1998-03-06 2001-09-10 日本電気株式会社 ショートスタブ整合回路
FR2779577B1 (fr) * 1998-06-09 2001-01-05 Deti Composant passif hyperfrequence a charge resistive comportant des elements d'adaptation hyperfrequence integres
JP5306153B2 (ja) * 2009-11-16 2013-10-02 株式会社東芝 高周波減衰器および高周波減衰器を用いた高周波装置
JP5419088B2 (ja) * 2010-01-07 2014-02-19 アルパイン株式会社 基板減衰回路
CN101916900A (zh) * 2010-07-30 2010-12-15 合肥佰特微波技术有限公司 一种带多级联衰减电路的片状电阻

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2459857A (en) * 1942-08-17 1949-01-25 Standard Telephones Cables Ltd Attenuating line for ultra-high frequencies
US3678417A (en) * 1971-07-14 1972-07-18 Collins Radio Co Planar r. f. load resistor for microstrip or stripline
JPS5137548A (en) * 1974-09-26 1976-03-29 Daiichi Denshi Kogyo Dojikugatainpiidansuhenkanpatsudoyokaadoatsuteneeta narabini dojikugatainpiidansuhenkanpatsudo
US4126824A (en) * 1977-04-21 1978-11-21 Xerox Corporation Progressively shorted tapered resistance device
US4272739A (en) * 1979-10-18 1981-06-09 Morton Nesses High-precision electrical signal attenuator structures
FR2483119A1 (fr) * 1980-05-20 1981-11-27 Thomson Csf Element resistif en technique microbande et circuit comportant au moins un tel element
FR2486720A1 (fr) * 1980-07-11 1982-01-15 Thomson Csf Dispositif de terminaison d'une ligne de transmission, en hyperfrequence, a taux d'ondes stationnaires minimal
US4310812A (en) * 1980-08-18 1982-01-12 The United States Of America As Represented By The Secretary Of The Army High power attenuator and termination having a plurality of cascaded tee sections

Also Published As

Publication number Publication date
JPS6353722B2 (enrdf_load_stackoverflow) 1988-10-25
US4456894A (en) 1984-06-26
FR2525383B1 (enrdf_load_stackoverflow) 1984-11-16
CA1185667A (fr) 1985-04-16
JPS58188901A (ja) 1983-11-04
EP0092137A1 (fr) 1983-10-26
FR2525383A1 (fr) 1983-10-21
DE3370723D1 (en) 1987-05-07

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