EP1086507B1 - Composant passif hyperfrequence a charge resistive - Google Patents
Composant passif hyperfrequence a charge resistive Download PDFInfo
- Publication number
- EP1086507B1 EP1086507B1 EP99925061A EP99925061A EP1086507B1 EP 1086507 B1 EP1086507 B1 EP 1086507B1 EP 99925061 A EP99925061 A EP 99925061A EP 99925061 A EP99925061 A EP 99925061A EP 1086507 B1 EP1086507 B1 EP 1086507B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- elements
- inductive
- resistive
- component
- contact area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
- H01P1/26—Dissipative terminations
Definitions
- the present invention relates to the field of passive components microwave and more particularly passive microwave components to resistive load intended for power dissipation comprising an element resistive suitable from 25 to 75 ohms and, most often to the standard of 50 ohms.
- microwave-ribbons These components are used in different microwave systems (to from 0.5 GHz) and are intended to protect installations by dissipating through a suitable support the non-active energy of the system in the event of dysfunction. They are most often connected on line structures so-called “micro-ribbons”.
- Passive microwave components generally have a power dissipation support, on which a range of wiring, a ground range and a resistive layer having resistance standard between wiring range and ground range and also include microwave adaptation elements.
- JP-07 221 509 which relates to the adaptation of a component with elements external to it, but this component does not have a simple internal adaptation and a fortiori internal adaptation of multiple order.
- the prior art also knows passive microwave components comprising a beryllium oxide dissipation support, so as to promote the heat exchange between the power absorbed by the resistive load and this support of reception and diffusion of heat on which the resistive load is etched.
- Beryllium oxide is one of the materials with the best compromise between high thermal conductivity and low constant dielectric.
- the present invention further proposes to use a support material which is not harmful, in this case aluminum oxide AL 2 O 3 or alumina.
- the depositor has developed a component image such that it allows obtaining characteristics at least equal, sometimes even superior to the characteristics beryllium oxide supports, while keeping the same dimensioning.
- Alumina also has the advantage of being much less expensive to manufacture and much easier to implement.
- the present invention also proposes to use a support material made of aluminum nitride.
- An important advantage of the invention is to allow a passive microwave component with an alumina support, unique, added, which is frequency adapted for a power greater than 30 Watts and up to 60 to 80 Watts and even more.
- the component according to the invention makes it possible for example to obtain a very low TOS close to 1 for a given frequency or for a frequency range which can to be very tall.
- the component allows for example to obtain a TOS less than 1.05 between 0.5 GHz and 3.5 GHz.
- the geometric dimension of the adaptation elements is adapted to the dimension and power of the component.
- the present invention relates to a passive microwave component with resistive load (1) intended for power dissipation, illustrated in FIGS. 1 and 2, comprising a support (2), a wiring range (3), a mass range (4) and a resistive layer (5) having a standard resistance between the wiring range (3) and the mass range (4).
- the component according to the invention is characterized in that it comprises completely inductive and capacitive microwave adapters integrated, outside the resistive layer (5) in order to carry out an order adaptation multiple, by multiplying the inductive elements in series and the capacitive elements in parallel.
- the component according to the invention is also characterized in that said microwave adaptation elements have geometric dimensions adapted to the size and power of the component.
- Metallization is carried out on the underside (7) of the component (1). It constitutes the mass connection and is therefore called the mass ".
- the resistive layer (5) is deposited on the upper surface (8) of the component (1), in contact with the two metal wiring areas (3) and mass (4).
- the wiring range (3) constitutes the load input connection resistive and the mass range (4) allows the connection with the ground plane (7) by through one or more holes (6) whose walls are metallized, opening on either side of the upper and lower surfaces.
- Figure 5 shows a simplified equivalent diagram of the resistive load complete of Figures 1 and 2.
- the resistive layer (5) is modeled by the resistance R5 which is the element load main, supplemented by capacitance C5 and inductance L5 arranged between the resistive layer (5) and the ground plane (7).
- compensation for so-called first order faults is performed by adding an inductor additional L6 produced for example by the metallized hole or holes.
- This assembly constitutes, according to the state of the art, an adaptation circuit of order 2.
- FIGS. 3 and 4 we find the same elements as in the simple version illustrated in FIGS. 1 and 2, but the ranges metallized (3) and (4) are produced in a more complex pattern.
- Said pre-resistance inductive element (9) can be, for example, constituted a narrow line (12).
- Said pre-resistance capacitive element (10) can for example be constituted a wide line (13), and / or an insulating gap (15).
- Said post-resistance inductive elements (11) can, for example, be consisting of one or more holes (6) whose walls are metallized and / or a narrow line (14).
- the component (1) illustrated by way of example in FIGS. 3 and 4 comprises a pre-resistance inductive element (9), one pre-resistance capacitive element (10) and two post-resistance inductive elements (11) consisting of holes (6) and a line narrow (14).
- the narrow line (12) forms an inductor in series L9
- the wide line (13) forms a capacitance in parallel C10
- the narrow line (14) constitutes an inductance complementary L11.
- Figure 6 shows the role of elements C10, L9, L11 and L6 as compensators for elements C5 and L5 contained in the resistive layer (5) in addition of the main element R5.
- the above set constitutes, according to the state of the art, a fourth order adaptation circuit capable of compensate for faults in the impedance measured at range (3) up to the third order.
- the support (2) is made of aluminum oxide.
- the component according to the invention makes it possible to dissipate energies from 5 to 100 Watts, while keeping the same size as the beryllium oxide components.
- the operating frequencies can reach 1 to 5 GHz or more depending on the power to dissipate.
- FIGS 8 and 9 which illustrate the respective Smith diagrams of curves A and B clearly show that, in the case of a conventional component, the impedance is only capacitive whereas in the case of a component according to the invention, the impedance is alternately inductive then capacitive, then inductive.
- the support (2) is made of aluminum nitride.
- the component according to the invention thus produced achieves performance of higher dissipated power (at specified frequency) or frequencies of higher operating performance (at a given power loss) than that of the components made of Beryllium oxide.
- the mass return is preferably done by tranche Metallic.
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- Non-Reversible Transmitting Devices (AREA)
Description
- de notification claire de la présence d'oxyde de béryllium sur le produit fini,
- de description du produit suivant les règlements d'hygiène et de sécurité,
- de contrôle du retrait des appareils usagés et de leur recyclage,...
- d'un ou de plusieurs éléments inductifs pré-résistance situés en série entre la plage de câblage et la couche résistive et,
- d'un ou de plusieurs éléments capacitifs pré-résistance situés en parallèle entre la plage de câblage et la couche résistive et,
- d'un ou de plusieurs éléments inductifs post-résistance situés en série entre la couche résistive et la plage de masse.
- un ou plusieurs éléments inductifs pré-résistance situés en série entre la plage de câblage et la couche résistive ; et / ou
- un ou plusieurs éléments capacitifs pré-résistance situés en parallèle entre la plage de câblage et la couche résistive ; et / ou
- un ou plusieurs éléments inductifs post-résistance situés en série entre la couche résistive et la plage de masse.
- les figures 1 et 2 illustrent une version simple du composant selon l'invention, vu respectivement en perspective et en coupe selon AA,
- les figures 3 et 4 illustrent une version plus complexe du composant selon l'invention, vu respectivement en perspective et en coupe selon BB,
- la figure 5 illustre le schéma équivalent simplifié du composant simple des figures 1 et 2,
- la figure 6 illustre le schéma équivalent simplifié du composant complexe des figures 3 et 4.
- La figure 7 illustre un diagramme du TOS obtenu en fonction de la fréquence, grâce à un composant selon l'invention (courbe B) par rapport à un composant classique (courbe A),
- La figure 8 illustre le diagramme de Smith du composant de la courbe A, et
- La figure 9 illustre le diagramme de Smith du composant selon l'invention de la courbe B.
- d'un ou de plusieurs éléments inductifs pré-résistance (9) situés en série entre la plage de câblage (3) et la couche résistive (5),
- d'un ou de plusieurs éléments capacitifs pré-résistance (10) situés en parallèle entre la plage de câblage (3) et la couche résistive (5), le phénomène capacitif étant créé entre la plage de câblage (3) et le plan de masse (7), et
- d'un ou de plusieurs éléments inductifs post-résistance (11) situés en série entre la couche résistive (5) et la plage de masse (4).
- référence 1 : 1 GHz,
- référence 2 : 1,5 GHz,
- référence 3 : 2 GHz,
- référence 4 : 2,5 GHz,
- référence 5 : 3 GHz,
- référence 6 : 3,5 GHz.
Claims (6)
- Composant passif hyperfréquence à charge résistive (1) destiné à la dissipation de puissance, comportant un support (2), une plage de câblage (3), une plage de masse (4) et une couche résistive (5) présentant une résistance standard entre la plage de câblage (3) et la plage de masse (4), caractérisé en ce qu'il comporte des éléments d'adaptation hyperfréquences capacitifs et inductifs complètement intégrés, extérieurs à la couche résistive (5), afin de réaliser une adaptation d'ordre multiple, en multipliant les éléments inductifs en série et les éléments capacitifs en parallèle, qui sont constitués :d'un ou de plusieurs éléments inductifs pré-résistance (9) situés en série entre la plage de câblage (3) et la couche résistive (5) et,d'un ou de plusieurs éléments capacitifs pré-résistance (10) situés en parallèle entre la plage de câblage (3) et la couche résistive (5) et,d'un ou de plusieurs éléments inductifs post-résistance (11) situés en série entre la couche résistive (5) et la plage de masse (4).
- Composant passif hyperfréquence à charge résistive (1) selon la revendication 1, caractérisé en ce que lesdits éléments d'adaptation hyperfréquences présentent des dimensions géométriques adaptées à la dimension et à la puissance du composant.
- Composant passif hyperfréquence à charge résistive (1) selon l'une des revendications précédentes, caractérisé en ce que edit élément inductif pré-résistance (9) est constitué d'une ligne étroite (12).
- Composant passif hyperfréquence à charge résistive (1) selon l'une des revendications précédentes, caractérisé en ce que ledit élément capacitif pré-résistance (10) est constitué d'une ligne large (13).
- Composant passif hyperfréquence à charge résistive (1) selon l'une des revendications précédentes, caractérisé en ce que lesdits éléments inductifs post-résistance (11) sont constitués d'un ou de plusieurs trous (6) traversant le support (2) dont les parois sont métallisées.
- Composant passif hyperfréquence à charge résistive (1) selon l'une quelconque des revendications 1 à 5, caractérisé en ce que ledit élément inductif post-résistance (11) est constitué d'une ligne étroite (14).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9807468A FR2779577B1 (fr) | 1998-06-09 | 1998-06-09 | Composant passif hyperfrequence a charge resistive comportant des elements d'adaptation hyperfrequence integres |
FR9807468 | 1998-06-09 | ||
PCT/FR1999/001362 WO1999065104A1 (fr) | 1998-06-09 | 1999-06-09 | Composant passif hyperfrequence a charge resistive |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1086507A1 EP1086507A1 (fr) | 2001-03-28 |
EP1086507B1 true EP1086507B1 (fr) | 2003-08-13 |
Family
ID=9527352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP99925061A Expired - Lifetime EP1086507B1 (fr) | 1998-06-09 | 1999-06-09 | Composant passif hyperfrequence a charge resistive |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1086507B1 (fr) |
AU (1) | AU4148199A (fr) |
DE (1) | DE69910383D1 (fr) |
FR (1) | FR2779577B1 (fr) |
WO (1) | WO1999065104A1 (fr) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2096858B1 (fr) * | 1970-07-07 | 1973-11-16 | Thomson Csf | |
FR2486720A1 (fr) * | 1980-07-11 | 1982-01-15 | Thomson Csf | Dispositif de terminaison d'une ligne de transmission, en hyperfrequence, a taux d'ondes stationnaires minimal |
FR2525383A1 (fr) * | 1982-04-16 | 1983-10-21 | Cables De Lyon Geoffroy Delore | Resistances en constantes reparties pour charges a forte dissipation en hyperfrequence |
SU1550590A1 (ru) * | 1988-04-11 | 1990-03-15 | Предприятие П/Я А-1586 | Микрополоскова нагрузка |
DE3843600C1 (en) * | 1988-12-23 | 1990-03-22 | Rohde & Schwarz Gmbh & Co Kg, 8000 Muenchen, De | High-frequency power terminating impedance |
JPH07221509A (ja) * | 1994-02-01 | 1995-08-18 | Hitachi Ltd | マイクロ波帯終端器 |
-
1998
- 1998-06-09 FR FR9807468A patent/FR2779577B1/fr not_active Expired - Fee Related
-
1999
- 1999-06-09 EP EP99925061A patent/EP1086507B1/fr not_active Expired - Lifetime
- 1999-06-09 DE DE69910383T patent/DE69910383D1/de not_active Expired - Lifetime
- 1999-06-09 AU AU41481/99A patent/AU4148199A/en not_active Abandoned
- 1999-06-09 WO PCT/FR1999/001362 patent/WO1999065104A1/fr active IP Right Grant
Non-Patent Citations (1)
Title |
---|
MATTHAEI G.L. ET AL: "Microwave Filters, Impedance matching networks, and coupling structures", 1980, ARTECH HOUSE, DEDHAM * |
Also Published As
Publication number | Publication date |
---|---|
FR2779577A1 (fr) | 1999-12-10 |
AU4148199A (en) | 1999-12-30 |
WO1999065104A1 (fr) | 1999-12-16 |
FR2779577B1 (fr) | 2001-01-05 |
DE69910383D1 (de) | 2003-09-18 |
EP1086507A1 (fr) | 2001-03-28 |
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