EP0078583B1 - Photocathode pour entrée de tube électronique comportant un dispositif semiconducteur avec photoémission par transmission - Google Patents

Photocathode pour entrée de tube électronique comportant un dispositif semiconducteur avec photoémission par transmission Download PDF

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Publication number
EP0078583B1
EP0078583B1 EP82201371A EP82201371A EP0078583B1 EP 0078583 B1 EP0078583 B1 EP 0078583B1 EP 82201371 A EP82201371 A EP 82201371A EP 82201371 A EP82201371 A EP 82201371A EP 0078583 B1 EP0078583 B1 EP 0078583B1
Authority
EP
European Patent Office
Prior art keywords
semiconductor
layer
photocathode
glass
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP82201371A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0078583A1 (fr
Inventor
Pierre Guittard
Bernard Guillemet
Claude Piaget
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Koninklijke Philips NV
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee, Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Laboratoires dElectronique et de Physique Appliquee
Publication of EP0078583A1 publication Critical patent/EP0078583A1/fr
Application granted granted Critical
Publication of EP0078583B1 publication Critical patent/EP0078583B1/fr
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/38—Photoelectric screens; Charge-storage screens not using charge storage, e.g. photo-emissive screen, extended cathode

Definitions

  • the present invention relates to a photocathode for entering an electronic tube of the kind comprising a solid support transparent to radiation, a semiconductor device with a photoelectric effect by transmission, means for fixing the semiconductor on the support and means for fixing the photocathode to the body of the body. tube.
  • the assembly formed must withstand, inter alia, the high temperature heat treatment prior to the activation of the semiconductor in order to make it photoemissive, by adding cesium (caesiation) for example, without on this occasion the crystal properties of the powerful semiconductor be disturbed.
  • the support must provide the photocathode assembly with good mechanical strength. It is therefore necessarily thick. On the other hand, it is fixed by its periphery to the body of the tube. It must therefore extend beyond the surface largely outside the surface of the semiconductor so that the welding operations with the body do not degrade the photoemission part. Finally, as much by its thickness as by its surface, the support has a fairly large volume. In order not to increase the cost of the tube, it is desirable that the material constituting said support is not too expensive.
  • the semiconductor is sealed using a sealing glass on a support made of monocrystalline oxide, in particular corundum, the expansion coefficients of the semiconductor, of the glass sealing and the oxide being adapted to each other but the transition and softening temperatures of the oxide being much higher than those of the sealing glass and the semiconductor.
  • the monocrystalline oxide is brought to temperatures much lower than those of its transition point, so that after said sealing, it does not acquire, when cooled, co-stresses liable to release during subsequent heat treatment and come to induce in the sealing glass and the semiconductor.
  • Monocrystalline oxide thus plays, as it were, during the sealing and heat treatment operation, a role of stiffener which tends to preserve the crystalline properties of the semiconductor.
  • the good thermal conductivity of the oxide is very appreciable during heat treatments of the semiconductor, after sealing.
  • this monocrystalline oxide whatever its nature, is always an expensive material, which makes the electronic tube more expensive.
  • the object of the invention is to produce a photocathode, the structure of which retains the same advantages as the structure according to the previously cited French patent, with a less expensive embodiment.
  • the invention proposes a photocathode of the same general structure as according to this French patent but with a semiconductor support formed differently.
  • this consists of a photocathode of the type comprising a semiconductor device for photoemission by transmission constituted at least one p-type active layer, a solid support for this semiconductor made of a material transparent to radiation, a layer for sealing the semiconductor on the support made of a glass transparent to radiation and with expansion properties comparable to those of semiconductor, at least one passivating layer of semiconductor material placed between the latter and said glass, means for fixing the photocathode to the body of the tube.
  • Said photocathode is remarkable in that the support is broken down into two superimposed parts, namely, a first part in the form of a blade made of material with transition and softening points greater than that of the sealing layer and the faces of which have a surface substantially equal to that of the semiconductor and on one of which is sealed said semiconductor, and a second part in a transparent glass, with properties of expansion substantially identical to that of the sealing layer, in the form of a thick body having two parallel faces, on one of which is welded the free face of said blade, the periphery of this second part projecting from the first part and receiving said means for fixing the photocathode to said tube body.
  • the construction comprises the same steps as that of French Patent No. 2,300,413, in particular the step of assembling the assembly with sealing of the semiconductor on said first part and that of the latter on said second part.
  • This assembly is carried out by bringing the assembly to a temperature of the order of 600 to 700 ° C. depending on the nature of the materials and under a pressure perpendicular to the faces of the order of 98 to 490 kPa (1 to 5 kg / cm 2 ).
  • the cooling which follows and the heat treatments prior to the photoelectric activation of the semiconductor, the blade of the first part of the support is sandwiched between glasses which, because of their substantially identical expansion properties, exert on the blade equal and opposite mechanical actions. Said blade therefore does not undergo bending capable of inducing stresses in the semiconductor.
  • said blade from the high transition point of its material does not store its own stresses liable to be released in the semiconductor. It thus plays during the construction of the photocathode the role of stiffening element like the monocrystalline oxide of the French patent N ° 2300413.
  • the material constituting this blade with high transition point is generally expensive but this being found in the support in small proportion (blade thickness of the order of for example 1 mm) compared to that of glass (thickness of the second part of the order for example of 5 mm), it hardly increases said support.
  • the blade material is an oxide or compound of monocrystalline or polycrystalline oxide such as corundum, while the sealing glass and that of the second part of the support are identical and have a molar centesimal composition included in the range : or the following centesimal molar composition included in the range: or:
  • the blade material is a glass whose transition and softening points are much higher than those of sealing and heat treatments subsequent to cementing, the sealing and second-part glasses being those indicated above.
  • the semiconductor comprises on the sealing side at least one passivating layer either from the chemical point of view or from the electronic point of view.
  • the passivation from the chemical point of view is obtained using a layer made of an oxide such as silica or a native oxide of the semiconductor obtained by anodization and having the aim of avoiding the decomposition of the semiconductor during sealing .
  • Passivation from an electronic point of view uses a layer of semiconductor material with a large forbidden band ("gap" of the order of 1.3 to 2 eV) P-doped, which minimizes the speed of recombination of the electrons as much as possible. the photo-emission semiconductor glass interface.
  • a layer of SiaN 4 with an intermediate refractive index (2.2) is deposited on the semiconductor between that of the semiconductor (3.3) and that of the passivating layer. chemical (1,5), so that the light losses at the semiconductor glass interface are minimized.
  • the support has two parts, namely, part 1 in the form of a blade, with a thickness of the order of 1 mm, with a high softening point (for information greater than 800 °) and part 2 having two parallel faces. and thicker with a thickness of the order of, for example, 5 mm, made of a glass with a softening point much lower than that of the material of part 1.
  • Part 2 more extends far beyond the surface of part 1 and has a periphery 14 on which the body of the tube is fixed using means not shown.
  • Part 1 is covered on one of its faces 4 with a layer of glass 5 whose thermal expansion properties are comparable to those of the material of the blade 1 and also of the part 2, while its melting point is clearly lower than that of the blade material 1.
  • the semiconductor under development is for example of the active layer type made of binary material of GaAs type.
  • a first layer 8 of ternary compound, Ga, AI, As of N or P type doping is deposited on the GaAs substrate 7.
  • an active layer 9 is grown by epitaxy. of P type doped GaAs, then a so-called electronic passivation layer 10 of Ga, AI, As, necessarily of P doping type.
  • the thickness of the electronic passivation layer 10 is of the order of 10 to 20 ⁇ , that of optical adaptation of 100 nm and that of silica of the order of 50 to 200 nm.
  • FIG. 2 the same elements are found again, the glass layer 5 being in contact with the layer 12.
  • the assembly is subjected under a neutral, or slightly reducing, atmosphere to a pressure of between 98 and 490 kPa (1 and 5 kg / cm 2 ) and at a temperature between 620 and 650 ° C.
  • the combined action of temperature and pressure leads on the one hand to the welding of 1 of 2 and on the other share that of 12 out of 5.
  • the selective attack is then carried out by appropriate successive chemical baths on the substrate 7 and on the layer 8.
  • the structure shown in FIG. 3 is then obtained, intended for the entry of an electronic tube, the photocathode receiving radiation from the outside in the direction of the arrows such as 13.
  • this structure Before being mounted in said tube, this structure undergoes well-known activation treatments, that is to say that according to conventional methods , the window is put under vacuum, cleaned by heating, ion bombardment, ..., and the on free side of the active layer is covered with at least one activating layer (cesium, oxygen). During these operations, the entire structure is brought to a temperature of the order of 630 ° C. It is feared that during the operations of sealing the semiconductor on its support as well as during the cleaning operations prior to the cession, stresses are induced from the support in the semiconductor and disturb its crystal structure. and consequently decrease the expected photoelectric yield.
  • activating layer cesium, oxygen
  • part 1 of material with a transition temperature much higher than that of sealing and heat treatment does not store during these treatments and the ensuing coolings, own stresses liable to be released and to induce in the semiconductor.
  • the elements 5 and 2 located on either side of 1 being made of glass whose expansion properties are substantially identical these exert, after cooling, mechanical actions of substantially identical and opposite stresses on part 1 , so that it does not undergo deformation capable of inducing disturbances in the semiconductor.
  • the active layer of GaAs is able to retain its electronic transport properties so that the electron diffusion length in the layer is at least of the order of 6 ⁇ m for P-type doping corresponding to a concentration of the order of 10 19 atoms / cm 3 of doping body, for example zinc or germanium.
  • the material of the blade constituting the support is an oxide or compound of monocrystalline or polycrystalline oxide such as corundum or spinel of chemical formula MgO - 3.5 A1 2 0 3 , while the sealing glass or that of the second part of the support are identical and have a centesimal molar composition included in the range: or the following centesimal molar composition included in the range: or the following molar centesimal composition:
  • the blade material is a glass among those whose transition and softening point temperatures are significantly higher than those of sealing and heat treatments prior to cessation of the semiconductor, and the sealing and second glasses. part are those indicated above.
  • This blade material is for example a glass manufactured by the firm Schott (West Germany) and appearing in the catalog of said firm under the numbers 8409 and 8436.
  • the invention comprises the method of construction of the photocathode assembly with the semiconductor development phase.

Landscapes

  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
EP82201371A 1981-11-04 1982-11-01 Photocathode pour entrée de tube électronique comportant un dispositif semiconducteur avec photoémission par transmission Expired EP0078583B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8120675 1981-11-04
FR8120675A FR2515870A1 (fr) 1981-11-04 1981-11-04 Photocathode pour entree de tube electronique comportant un dispositif semi-conducteur avec photo-emission par transmission

Publications (2)

Publication Number Publication Date
EP0078583A1 EP0078583A1 (fr) 1983-05-11
EP0078583B1 true EP0078583B1 (fr) 1985-09-11

Family

ID=9263690

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82201371A Expired EP0078583B1 (fr) 1981-11-04 1982-11-01 Photocathode pour entrée de tube électronique comportant un dispositif semiconducteur avec photoémission par transmission

Country Status (5)

Country Link
US (1) US4536679A (enrdf_load_stackoverflow)
EP (1) EP0078583B1 (enrdf_load_stackoverflow)
JP (1) JPS5885244A (enrdf_load_stackoverflow)
DE (1) DE3266226D1 (enrdf_load_stackoverflow)
FR (1) FR2515870A1 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2553934B1 (fr) * 1983-10-19 1986-09-05 Labo Electronique Physique Structure semi-conducteur-support vitreux et dispositifs realises avec une telle structure
FR2572583B1 (fr) * 1984-10-30 1987-02-20 Labo Electronique Physique Dispositif photoelectrique pour la detection d'evenements lumineux
US5489817A (en) * 1991-04-19 1996-02-06 Scitex Corporation Ltd. Electron-optical terminal image device based on a cold cathode
US6992441B2 (en) * 2003-09-14 2006-01-31 Litton Systems, Inc. MBE grown alkali antimonide photocathodes
JP5308078B2 (ja) * 2008-06-13 2013-10-09 浜松ホトニクス株式会社 光電陰極
CN101393837B (zh) * 2008-11-10 2010-06-02 中国兵器工业第二〇五研究所 纳秒响应微光像增强器的光电阴极及其制作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4008402A (en) * 1974-07-18 1977-02-15 Westinghouse Electric Corporation Method and apparatus for electron beam alignment with a member by detecting X-rays
GB1476471A (en) * 1975-01-16 1977-06-16 Standard Telephones Cables Ltd Gallium arsenide photocathodes
FR2300413A1 (fr) * 1975-02-04 1976-09-03 Labo Electronique Physique Fenetre
FR2325175A1 (fr) * 1975-09-18 1977-04-15 Thomson Csf Photocathode monocristalline utilisee en transmission et tube electronique comportant une telle photocathode
DE2842492C2 (de) * 1978-09-29 1986-04-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung einer aus einem Halbleiter-Glas-Verbundwerkstoff bestehenden Photokathode
FR2498321A1 (fr) * 1981-01-21 1982-07-23 Labo Electronique Physique Structure de detection photoelectrique

Also Published As

Publication number Publication date
JPH0418653B2 (enrdf_load_stackoverflow) 1992-03-27
FR2515870A1 (fr) 1983-05-06
DE3266226D1 (en) 1985-10-17
US4536679A (en) 1985-08-20
EP0078583A1 (fr) 1983-05-11
FR2515870B1 (enrdf_load_stackoverflow) 1983-12-02
JPS5885244A (ja) 1983-05-21

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