EP0000844A1 - Halbleiterschaltung zur Steuerung eines Steuergerätes. - Google Patents

Halbleiterschaltung zur Steuerung eines Steuergerätes. Download PDF

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Publication number
EP0000844A1
EP0000844A1 EP78300269A EP78300269A EP0000844A1 EP 0000844 A1 EP0000844 A1 EP 0000844A1 EP 78300269 A EP78300269 A EP 78300269A EP 78300269 A EP78300269 A EP 78300269A EP 0000844 A1 EP0000844 A1 EP 0000844A1
Authority
EP
European Patent Office
Prior art keywords
transistor
current carrying
circuit arrangement
terminal
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP78300269A
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English (en)
French (fr)
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EP0000844B1 (de
Inventor
Howard Clayton Kirsch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of EP0000844A1 publication Critical patent/EP0000844A1/de
Application granted granted Critical
Publication of EP0000844B1 publication Critical patent/EP0000844B1/de
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices

Definitions

  • This invention relates to a semiconductor circuit arrangement for controlling current transmitted through a controlled device.
  • the current in a controlled device such as a semiconductor light emitting diode (LED) has been regulated by a control circuit containing an insulated gate field effect transistor (IGFET) driver switch of relatively very large transconductance in series with a ballast resistor.
  • IGFET insulated gate field effect transistor
  • the IGFET driver is typically formed in a semiconductive silicon chip in accordance with standard MOS (metal-oxide-semiconductor) technology.
  • MOS metal-oxide-semiconductor
  • the current in a controlled device such as an LED is stabilized by a semiconductor circuit arrangement which includes transistor switch means having feedback means operable on the control input of the input thereof for controlling the current flowing through the transistor switch means and thus through the controlled device when connected in series therewith.
  • the feedback means is of comparator form for stabilizing a node of the series circuit in dependence upon a comparison of the node voltage and a reference voltage.
  • the transistor switch means can operate with a relatively large source-drain voltage, typically of about 5 volts; therefore, for a given operating current in the thereby controlled (LED) device the transistor switch means can now have a relatively high resistance, thereby reducing the required amount of semiconductor chip area therefor.
  • an LED is connected in series with a ballast resistor and the high current path (source-drain) of an IGFET driver switch (Q i ).
  • the node between the IGFET driver and the series connection of the LED and Ballast resistor is connected through a comparator type feedback network back to the low current control (gate) terminal of the IGFET driver.
  • This control terminal of the IGFET driver is also connected through the high current path of an auxiliary control IGFET (Q2) switch to a voltage source, the low current control terminal of this auxiliary IGFET being connected to an input terminal for application thereto of input signals to turn the LED "on” and "off".
  • a semiconductor LED 10 has one of its terminals connected to a voltage source V GG and another of its terminals connected to a ballast resistor R.
  • the circuit parameters will be described in terms of P-MOS technology .
  • the source V GG is approximately -12 volts
  • the resistor R is approximately a thousand ohms.
  • the LED is characterized by an operating "on" current of about 10 milliamperes with an operating voltage drop of about 2 to 3 volts.
  • the LED and the resistor R are connected in series with the high current (i.e. source-drain) path of an IGFET driver Q 1 to another voltage source V SS of about +5 volt. In its "on" state, the driver Q 1 has a resistance advantageously equal to about R/2 or less.
  • the IGFETs Q 3 , Q 4 , Q 5 and Q 6 are in a comparator feedback network arrangement for stabilizing the voltage at node 11 located between R and Q l .
  • the node 11 is connected to a low current (i.e. gate) terminal of Q 6 whose high current path connects VGG to a node 13.
  • the gate terminal of the driver Q I is connected to a node 12 which is connected through Q 5 to V GG and through Q 4 to the node 13.
  • the IGFET Q 5 is in a diode configuration; that is, the drain and gate terminals of Q 5 are shorted together, so that Q 5 behaves as a diode which tends to conduct current only in the direction toward the source V GG .
  • the gate terminal of Q 4 is connected to ground serving as a reference potential.
  • the node 12 is further connected to V SS through the high current path of Q 2 .
  • the gate of Q 2 is connected to an input signal source 20 which provides signals for turning Q 2 "on” and “off".
  • Q 2 when Q 2 is “on”, then Q 1 is “off” and hence the LED 10 is also “off”; and when Q 2 is “off”, then Q 1 is “on” and hence the LED 10 is also “on”.
  • the feedback arrangement acts as a signal inverter as well as a current stabilizer.
  • the transconductance ratios B21 B31 B 4 , B 5 and B6 of the IGFETs Q2 , Q 3 , Q 4 , Q 5 and Q 6 should satisfy the following: B 5 should be much less than B 3 ; B 3 should be much less than either B 4 and B 6 ; and B 4 and B 6 should be much less than B 2 .
  • B 5 should be much less than B 3 ; B 3 should be much less than either B 4 and B 6 ; and B 4 and B 6 should be much less than B 2 .
  • uch less than is meant less than by preferably a factor of 10, but in any event at least by a factor of 2 or 5.
  • the node 12 tends to remain at essentially the potential V SS by virtue of the connection of this node to the source V SS through the relatively high B IGFET Q 2 .
  • This connection is through the transistor of the highest B in the comparator circuit (Q,, Q 5 and Q 6 in particular).
  • the node 12 remains in a stable condition at essentially V SS (the substrate of all transistors is connected to V SS as is ordinarily true in P-MOS integrated circuits). Accordingly, the voltage on the node 12 maintains the IGFET Q 1 in its "off” state, thereby maintaining the LED 10 in its "off” state also.
  • the transistor Q6 since the node 11 is essentially at potential at V GG due to the path through R and the LED to the source V GG , the transistor Q6 is in its "on” state; so that the node 13 is essentially at potential V GG (except for a threshold of Q 6 which, with the backgate bias effect, is about -5 or -6 volts). This is true even though Q 3 is also "on” because of the high B 6 of Q 6 as compared with the low B 3 of Q 3 .
  • N-MOS technology can be used instead of P-MOS; that is, all the transistors Q 1 -Q 6 can be integrated in a P-type semiconductor chip with N+ type source and drain regions, with suitable modifications in V SS and VGG.
  • other types of transistors than IGFETs can be used, such as J-FETs or bipolar transistors.
  • a unidirectional current inhibiting diode element of conductance B 5 in the forward direction can be used instead of the transistor Q 5 .
  • the voltages applied to gate electrode of Q 4 and of Q 3 can both be other than ground, in order to stabilize the voltage at node 11 during operation at a corresponding voltage other than essentially ground potential.
  • the voltage difference (V SS - V GG ) be at least three or more times the voltage drop across the LED in its "on" state, and that the voltage at node 11 be stabilized to a value that is sufficiently different from V SS to enable the use of a relatively small sized driver Q 1 of relatively high resistance, thereby to conserve semiconductor chip area.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Led Devices (AREA)
  • Control Of El Displays (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
EP78300269A 1977-08-11 1978-08-08 Halbleiterschaltung zur Steuerung eines Steuergerätes. Expired EP0000844B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/823,729 US4160934A (en) 1977-08-11 1977-08-11 Current control circuit for light emitting diode
US823729 1992-01-22

Publications (2)

Publication Number Publication Date
EP0000844A1 true EP0000844A1 (de) 1979-02-21
EP0000844B1 EP0000844B1 (de) 1983-03-23

Family

ID=25239562

Family Applications (1)

Application Number Title Priority Date Filing Date
EP78300269A Expired EP0000844B1 (de) 1977-08-11 1978-08-08 Halbleiterschaltung zur Steuerung eines Steuergerätes.

Country Status (4)

Country Link
US (1) US4160934A (de)
EP (1) EP0000844B1 (de)
JP (1) JPS5430456A (de)
DE (1) DE2862207D1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6315626B2 (en) 1998-06-26 2001-11-13 Qvf Pilot-Tec Gmbh Adhesively bonded pressure-resistant glass bodies

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US4346343A (en) * 1980-05-16 1982-08-24 International Business Machines Corporation Power control means for eliminating circuit to circuit delay differences and providing a desired circuit delay
US4504776A (en) * 1980-11-12 1985-03-12 Bei Electronics, Inc. Power saving regulated light emitting diode circuit
US4383216A (en) * 1981-01-29 1983-05-10 International Business Machines Corporation AC Measurement means for use with power control means for eliminating circuit to circuit delay differences
US4403157A (en) * 1982-02-08 1983-09-06 Teledyne Industries, Inc. Control circuit for light emitting diode
US4717868A (en) * 1984-06-08 1988-01-05 American Microsystems, Inc. Uniform intensity led driver circuit
DE3427498C2 (de) * 1984-07-26 1986-08-07 Ifm Electronic Gmbh, 4300 Essen Elektronisches, vorzugsweise berührungslos arbeitendes Schaltgerät
US4656637A (en) * 1985-02-14 1987-04-07 Sundstrand Data Control, Inc. Multiple ring laser gyro power supply
DE3519711A1 (de) * 1985-06-01 1986-12-04 Hirschmann Radiotechnik Schaltungsanordnung zur ansteuerung einer lichtemittierenden diode
GB2236414A (en) * 1989-09-22 1991-04-03 Stc Plc Controlled electronic load circuit
JP2518525B2 (ja) * 1993-06-28 1996-07-24 日本電気株式会社 無線選択呼出受信機
US5929568A (en) * 1997-07-08 1999-07-27 Korry Electronics Co. Incandescent bulb luminance matching LED circuit
US5998928A (en) * 1997-11-03 1999-12-07 Ford Motor Company Lighting intensity control system
US6388390B2 (en) 1999-04-06 2002-05-14 Erwin J. Rachwal Flashlight
US6697130B2 (en) 2001-01-16 2004-02-24 Visteon Global Technologies, Inc. Flexible led backlighting circuit
US6717559B2 (en) 2001-01-16 2004-04-06 Visteon Global Technologies, Inc. Temperature compensated parallel LED drive circuit
US6930737B2 (en) * 2001-01-16 2005-08-16 Visteon Global Technologies, Inc. LED backlighting system
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US6392359B1 (en) 2001-01-22 2002-05-21 Gelcore, L.L.C. System and method for reducing wavelength variations between light emitting diodes
JP4177022B2 (ja) * 2002-05-07 2008-11-05 ローム株式会社 発光素子駆動装置、及び発光素子を備えた電子機器
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US20070189001A1 (en) * 2002-12-11 2007-08-16 Safeexits, Inc. Multi-functional ballast and location-specific lighting
TWI260572B (en) 2003-03-07 2006-08-21 Hon Hai Prec Ind Co Ltd Variable driving apparatus for light emitting diode
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US9280933B2 (en) 2004-12-15 2016-03-08 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9275579B2 (en) 2004-12-15 2016-03-01 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US8576217B2 (en) 2011-05-20 2013-11-05 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9171500B2 (en) 2011-05-20 2015-10-27 Ignis Innovation Inc. System and methods for extraction of parasitic parameters in AMOLED displays
US8599191B2 (en) 2011-05-20 2013-12-03 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US20140111567A1 (en) 2005-04-12 2014-04-24 Ignis Innovation Inc. System and method for compensation of non-uniformities in light emitting device displays
US10012678B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
EP2688058A3 (de) 2004-12-15 2014-12-10 Ignis Innovation Inc. Verfahren und System zur Programmierung, Kalibrierung und Ansteuerung einer lichtemittierenden Vorrichtungsanzeige
CA2496642A1 (en) 2005-02-10 2006-08-10 Ignis Innovation Inc. Fast settling time driving method for organic light-emitting diode (oled) displays based on current programming
JP5355080B2 (ja) 2005-06-08 2013-11-27 イグニス・イノベイション・インコーポレーテッド 発光デバイス・ディスプレイを駆動するための方法およびシステム
CA2518276A1 (en) 2005-09-13 2007-03-13 Ignis Innovation Inc. Compensation technique for luminance degradation in electro-luminance devices
TWI291771B (en) * 2005-09-16 2007-12-21 Innolux Display Corp Light emitting diode flexible printed circuit
US7456586B2 (en) * 2006-01-31 2008-11-25 Jabil Circuit, Inc. Voltage controlled light source and image presentation device using the same
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Publication number Priority date Publication date Assignee Title
US6315626B2 (en) 1998-06-26 2001-11-13 Qvf Pilot-Tec Gmbh Adhesively bonded pressure-resistant glass bodies

Also Published As

Publication number Publication date
US4160934A (en) 1979-07-10
JPS5430456A (en) 1979-03-06
DE2862207D1 (en) 1983-04-28
EP0000844B1 (de) 1983-03-23

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