EA201171044A1 - Реактор осаждения из газовой фазы - Google Patents

Реактор осаждения из газовой фазы

Info

Publication number
EA201171044A1
EA201171044A1 EA201171044A EA201171044A EA201171044A1 EA 201171044 A1 EA201171044 A1 EA 201171044A1 EA 201171044 A EA201171044 A EA 201171044A EA 201171044 A EA201171044 A EA 201171044A EA 201171044 A1 EA201171044 A1 EA 201171044A1
Authority
EA
Eurasian Patent Office
Prior art keywords
chamber
reactor
deposition reactor
gas deposition
heating
Prior art date
Application number
EA201171044A
Other languages
English (en)
Other versions
EA026093B1 (ru
Inventor
Ярмо Маула
Ханну Лескинен
Кари Хяркёнен
Original Assignee
Бенек Ой
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Бенек Ой filed Critical Бенек Ой
Publication of EA201171044A1 publication Critical patent/EA201171044A1/ru
Publication of EA026093B1 publication Critical patent/EA026093B1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

Настоящее изобретение относится к реактору для осуществления способа осаждения из газовой фазы, при котором поверхность подложки подвергают последовательным поверхностным реакциям исходных материалов. Реактор содержит первую камеру (2), вторую камеру (4), установленную внутри первой камеры (2), и нагревательные средства для нагрева первой камеры (2). В соответствии с изобретением реактор также содержит один или более теплопередающих элементов (8) для уравновешивания разницы температур внутри первой камеры (2).
EA201171044A 2009-02-13 2010-02-11 Реактор осаждения из газовой фазы EA026093B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20095139A FI123769B (fi) 2009-02-13 2009-02-13 Kaasukasvatusreaktori
PCT/FI2010/050088 WO2010092235A1 (en) 2009-02-13 2010-02-11 Gas deposition reactor

Publications (2)

Publication Number Publication Date
EA201171044A1 true EA201171044A1 (ru) 2012-02-28
EA026093B1 EA026093B1 (ru) 2017-03-31

Family

ID=40404641

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201171044A EA026093B1 (ru) 2009-02-13 2010-02-11 Реактор осаждения из газовой фазы

Country Status (6)

Country Link
US (1) US20110265720A1 (ru)
EP (1) EP2396453A4 (ru)
CN (1) CN102317502B (ru)
EA (1) EA026093B1 (ru)
FI (1) FI123769B (ru)
WO (1) WO2010092235A1 (ru)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102534567B (zh) 2012-03-21 2014-01-15 中微半导体设备(上海)有限公司 控制化学气相沉积腔室内的基底加热的装置及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI97730C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
US6246031B1 (en) * 1999-11-30 2001-06-12 Wafermasters, Inc. Mini batch furnace
EP1667217A1 (en) * 2003-09-03 2006-06-07 Tokyo Electron Limited Gas treatment device and heat readiting method
GB0510051D0 (en) * 2005-05-17 2005-06-22 Forticrete Ltd Interlocking roof tiles
DE112007002116T5 (de) * 2006-09-11 2009-09-10 ULVAC, Inc., Chigasaki Unterdruck-Dampf-Bearbeitungs-Vorrichtung
US20090017637A1 (en) * 2007-07-10 2009-01-15 Yi-Chiau Huang Method and apparatus for batch processing in a vertical reactor
KR101354140B1 (ko) * 2008-02-27 2014-01-22 소이텍 Ｃｖｄ 반응기 내에서 가스 전구체들의 열화

Also Published As

Publication number Publication date
WO2010092235A1 (en) 2010-08-19
CN102317502B (zh) 2015-11-25
EP2396453A1 (en) 2011-12-21
US20110265720A1 (en) 2011-11-03
FI123769B (fi) 2013-10-31
EA026093B1 (ru) 2017-03-31
FI20095139A (fi) 2010-08-14
CN102317502A (zh) 2012-01-11
FI20095139A0 (fi) 2009-02-13
EP2396453A4 (en) 2017-01-25

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Legal Events

Date Code Title Description
MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM