FI20095139A - Kaasukasvatusreaktori - Google Patents

Kaasukasvatusreaktori Download PDF

Info

Publication number
FI20095139A
FI20095139A FI20095139A FI20095139A FI20095139A FI 20095139 A FI20095139 A FI 20095139A FI 20095139 A FI20095139 A FI 20095139A FI 20095139 A FI20095139 A FI 20095139A FI 20095139 A FI20095139 A FI 20095139A
Authority
FI
Finland
Prior art keywords
gasodlingsreaktor
Prior art date
Application number
FI20095139A
Other languages
English (en)
Swedish (sv)
Other versions
FI123769B (fi
FI20095139A0 (fi
Inventor
Jarmo Maula
Hannu Leskinen
Kari Haerkoenen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20095139A priority Critical patent/FI123769B/fi
Publication of FI20095139A0 publication Critical patent/FI20095139A0/fi
Priority to CN201080007483.8A priority patent/CN102317502B/zh
Priority to EA201171044A priority patent/EA026093B1/ru
Priority to EP10740970.8A priority patent/EP2396453A4/en
Priority to US13/143,306 priority patent/US20110265720A1/en
Priority to PCT/FI2010/050088 priority patent/WO2010092235A1/en
Publication of FI20095139A publication Critical patent/FI20095139A/fi
Application granted granted Critical
Publication of FI123769B publication Critical patent/FI123769B/fi

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
FI20095139A 2009-02-13 2009-02-13 Kaasukasvatusreaktori FI123769B (fi)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FI20095139A FI123769B (fi) 2009-02-13 2009-02-13 Kaasukasvatusreaktori
CN201080007483.8A CN102317502B (zh) 2009-02-13 2010-02-11 气体沉积反应器
EA201171044A EA026093B1 (ru) 2009-02-13 2010-02-11 Реактор осаждения из газовой фазы
EP10740970.8A EP2396453A4 (en) 2009-02-13 2010-02-11 Gas deposition reactor
US13/143,306 US20110265720A1 (en) 2009-02-13 2010-02-11 Gas deposition reactor
PCT/FI2010/050088 WO2010092235A1 (en) 2009-02-13 2010-02-11 Gas deposition reactor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20095139A FI123769B (fi) 2009-02-13 2009-02-13 Kaasukasvatusreaktori
FI20095139 2009-02-13

Publications (3)

Publication Number Publication Date
FI20095139A0 FI20095139A0 (fi) 2009-02-13
FI20095139A true FI20095139A (fi) 2010-08-14
FI123769B FI123769B (fi) 2013-10-31

Family

ID=40404641

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20095139A FI123769B (fi) 2009-02-13 2009-02-13 Kaasukasvatusreaktori

Country Status (6)

Country Link
US (1) US20110265720A1 (fi)
EP (1) EP2396453A4 (fi)
CN (1) CN102317502B (fi)
EA (1) EA026093B1 (fi)
FI (1) FI123769B (fi)
WO (1) WO2010092235A1 (fi)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102534567B (zh) * 2012-03-21 2014-01-15 中微半导体设备(上海)有限公司 控制化学气相沉积腔室内的基底加热的装置及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI97730C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
US6246031B1 (en) * 1999-11-30 2001-06-12 Wafermasters, Inc. Mini batch furnace
KR100901892B1 (ko) * 2003-09-03 2009-06-10 도쿄엘렉트론가부시키가이샤 가스 처리 장치 및 처리 가스 토출 구조체
GB0510051D0 (en) * 2005-05-17 2005-06-22 Forticrete Ltd Interlocking roof tiles
KR101373266B1 (ko) * 2006-09-11 2014-03-11 가부시키가이샤 알박 진공 증기 처리 장치
US20090017637A1 (en) * 2007-07-10 2009-01-15 Yi-Chiau Huang Method and apparatus for batch processing in a vertical reactor
JP5103677B2 (ja) * 2008-02-27 2012-12-19 ソイテック Cvdリアクタにおける気体状前駆体の熱化

Also Published As

Publication number Publication date
CN102317502B (zh) 2015-11-25
EP2396453A4 (en) 2017-01-25
EP2396453A1 (en) 2011-12-21
FI123769B (fi) 2013-10-31
WO2010092235A1 (en) 2010-08-19
FI20095139A0 (fi) 2009-02-13
US20110265720A1 (en) 2011-11-03
EA201171044A1 (ru) 2012-02-28
EA026093B1 (ru) 2017-03-31
CN102317502A (zh) 2012-01-11

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