DK339988D0 - Fotodetektor for ultraviolet straaling og fremgangsmaade til fremstilling af en saadan fotodetektor - Google Patents

Fotodetektor for ultraviolet straaling og fremgangsmaade til fremstilling af en saadan fotodetektor

Info

Publication number
DK339988D0
DK339988D0 DK339988A DK339988A DK339988D0 DK 339988 D0 DK339988 D0 DK 339988D0 DK 339988 A DK339988 A DK 339988A DK 339988 A DK339988 A DK 339988A DK 339988 D0 DK339988 D0 DK 339988D0
Authority
DK
Denmark
Prior art keywords
photo detector
ultraviol
radiation
procedure
manufacturing
Prior art date
Application number
DK339988A
Other languages
English (en)
Other versions
DK173856B1 (da
DK339988A (da
Inventor
Radivoje Popovic
Original Assignee
Landis & Gyr Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Landis & Gyr Ag filed Critical Landis & Gyr Ag
Publication of DK339988D0 publication Critical patent/DK339988D0/da
Publication of DK339988A publication Critical patent/DK339988A/da
Application granted granted Critical
Publication of DK173856B1 publication Critical patent/DK173856B1/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1133—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a conductor-insulator-semiconductor diode or a CCD device

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DK198803399A 1987-06-22 1988-06-21 Fotodetektor for ultraviolet stråling og fremgangsmåde til fremstilling af en sådan fotodetektor DK173856B1 (da)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CH235887 1987-06-22
CH235887 1987-06-22
CH138788 1988-04-14
CH138788 1988-04-14

Publications (3)

Publication Number Publication Date
DK339988D0 true DK339988D0 (da) 1988-06-21
DK339988A DK339988A (da) 1988-12-23
DK173856B1 DK173856B1 (da) 2001-12-27

Family

ID=25687516

Family Applications (1)

Application Number Title Priority Date Filing Date
DK198803399A DK173856B1 (da) 1987-06-22 1988-06-21 Fotodetektor for ultraviolet stråling og fremgangsmåde til fremstilling af en sådan fotodetektor

Country Status (5)

Country Link
US (1) US4910570A (da)
EP (1) EP0296371B1 (da)
JP (1) JPH0770753B2 (da)
DE (1) DE3876869D1 (da)
DK (1) DK173856B1 (da)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH684971A5 (de) * 1989-03-16 1995-02-15 Landis & Gyr Tech Innovat Ultraviolettlicht-Sensor.
CH680390A5 (da) * 1990-05-18 1992-08-14 Landis & Gyr Betriebs Ag
EP0579045B1 (de) * 1992-07-16 1995-02-22 Landis & Gyr Technology Innovation AG Anordnung mit einer integrierten farbselektiven Photodiode und einem der Photodiode nachgeschalteten Verstärker
EP0625803B1 (en) * 1993-05-19 1998-10-28 Hewlett-Packard GmbH Photodiode structure
DE4407730A1 (de) * 1994-03-08 1995-09-14 Fraunhofer Ges Forschung Halbleiterdetektor für kurzwellige Strahlung und Verfahren zu dessen Herstellung
US5814873A (en) * 1994-07-05 1998-09-29 Nec Corporation Schottky barrier infrared sensor
JP2596380B2 (ja) * 1994-07-05 1997-04-02 日本電気株式会社 ショットキ型赤外線センサ
WO1997018447A1 (fr) * 1995-11-14 1997-05-22 Tom Konstantin Abramovich Procede de mesure de rayonnement ultraviolet, dispositif de mise en oeuvre et photo-convertisseur
WO1997029517A2 (de) * 1996-02-05 1997-08-14 Laboratorium Für Physikalische Elektronik Uv-strahlungsdetektor
US5945722A (en) * 1997-05-02 1999-08-31 National Semiconductor Corporation Color active pixel sensor cell with oxide color filter
EP0986110A1 (de) * 1998-09-10 2000-03-15 Electrowatt Technology Innovation AG Lichtempfindliches Halbleiterelement und Verwendung zur Regelung von Flammen
US6414342B1 (en) * 1999-06-18 2002-07-02 Micron Technology Inc. Photogate with improved short wavelength response for a CMOS imager
US6204524B1 (en) 1999-07-14 2001-03-20 Micron Technology, Inc. CMOS imager with storage capacitor
DE19936000A1 (de) 1999-07-30 2001-02-08 Osram Opto Semiconductors Gmbh UV-Photodetektor mit verbesserter Empfindlichkeit
EP1191598B1 (de) 2000-01-18 2007-12-19 Siemens Schweiz AG Verfahren zur Herstellung eines Halbleiter-Photosensors
JP2001284629A (ja) * 2000-03-29 2001-10-12 Sharp Corp 回路内蔵受光素子
JP4465941B2 (ja) * 2001-11-22 2010-05-26 富士ゼロックス株式会社 紫外線受光素子
DE10223202A1 (de) * 2002-05-24 2003-12-11 Fraunhofer Ges Forschung Photodiode
US7719091B2 (en) * 2002-06-28 2010-05-18 M/A-Com Technology Solutions Holdings, Inc. Diode with improved switching speed
KR100572853B1 (ko) * 2003-12-26 2006-04-24 한국전자통신연구원 반도체 광센서
DE102005025937B4 (de) * 2005-02-18 2009-11-26 Austriamicrosystems Ag Lichtempfindliches Bauelement mit erhöhter Blauempfindlichkeit, Verfahren zur Herstellung und Betriebsverfahren
WO2007060758A1 (ja) 2005-11-24 2007-05-31 Murata Manufacturing Co., Ltd. 紫外線センサ
US8275724B2 (en) * 2008-10-15 2012-09-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of improving system performance and survivability through changing function
JP4867782B2 (ja) * 2007-05-14 2012-02-01 富士電機リテイルシステムズ株式会社 自動販売機
US10132679B2 (en) * 2014-05-23 2018-11-20 Maxim Integrated Products, Inc. Ultraviolet sensor having filter
JP6933543B2 (ja) * 2017-09-29 2021-09-08 エイブリック株式会社 半導体光検出装置および特定波長の光検出方法

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US3418473A (en) * 1965-08-12 1968-12-24 Honeywell Inc Solid state junction device for ultraviolet detection
US3560812A (en) * 1968-07-05 1971-02-02 Gen Electric High selectively electromagnetic radiation detecting devices
US3852591A (en) * 1973-10-19 1974-12-03 Bell Telephone Labor Inc Graded bandgap semiconductor photodetector for equalization of optical fiber material delay distortion
JPS51285A (da) * 1974-06-19 1976-01-05 Matsushita Electric Ind Co Ltd
JPS51144194A (en) * 1975-06-06 1976-12-10 Hitachi Ltd A semiconductor photo detector
US4032951A (en) * 1976-04-13 1977-06-28 Bell Telephone Laboratories, Incorporated Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses
FR2363197A1 (fr) * 1976-08-23 1978-03-24 Ibm Structure de photo-diode amelioree donnant une reponse en couleur bleue renforcee
US4141756A (en) * 1977-10-14 1979-02-27 Honeywell Inc. Method of making a gap UV photodiode by multiple ion-implantations
DE2800820A1 (de) * 1978-01-10 1979-09-27 Hermann Dr Ing Mader Halbleiter-diode
US4319258A (en) * 1980-03-07 1982-03-09 General Dynamics, Pomona Division Schottky barrier photovoltaic detector
JPS5737888A (en) * 1980-08-19 1982-03-02 Mitsubishi Electric Corp Photo detector
US4544939A (en) * 1981-08-25 1985-10-01 Rca Corporation Schottky-barrier diode radiant energy detector with extended longer wavelength response
DE3234096A1 (de) * 1982-09-14 1984-03-15 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Bauelemente und arrays aus silizium zur detektion von infrarotem licht
JPS59108461A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
US4594605A (en) * 1983-04-28 1986-06-10 Rca Corporation Imaging device having enhanced quantum efficiency
JPS6057780A (ja) * 1983-09-07 1985-04-03 Toshiba Corp 固体撮像装置およびその製造方法
FR2559619B1 (fr) * 1984-02-10 1987-01-16 Thomson Csf Dispositif photosensible avec filtres integres pour la separation des couleurs et procede de fabrication
US4598305A (en) * 1984-06-18 1986-07-01 Xerox Corporation Depletion mode thin film semiconductor photodetectors
DE3441922C2 (de) * 1984-11-16 1986-10-02 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Fotokathode für den Infrarotbereich
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell

Also Published As

Publication number Publication date
DK173856B1 (da) 2001-12-27
JPS6431472A (en) 1989-02-01
US4910570A (en) 1990-03-20
DK339988A (da) 1988-12-23
DE3876869D1 (de) 1993-02-04
JPH0770753B2 (ja) 1995-07-31
EP0296371A1 (de) 1988-12-28
EP0296371B1 (de) 1992-12-23

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Legal Events

Date Code Title Description
AHS Application shelved for other reasons than non-payment
AHB Application shelved due to non-payment
B1 Patent granted (law 1993)
PBP Patent lapsed

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