DK318384A - Vedvarende pnictidkilde og leveringssystem til filmaflejring, isaer ved kemisk dampaflejring - Google Patents

Vedvarende pnictidkilde og leveringssystem til filmaflejring, isaer ved kemisk dampaflejring Download PDF

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Publication number
DK318384A
DK318384A DK318384A DK318384A DK318384A DK 318384 A DK318384 A DK 318384A DK 318384 A DK318384 A DK 318384A DK 318384 A DK318384 A DK 318384A DK 318384 A DK318384 A DK 318384A
Authority
DK
Denmark
Prior art keywords
disposal
pnic
issues
updated
delivery system
Prior art date
Application number
DK318384A
Other languages
Danish (da)
English (en)
Other versions
DK318384D0 (da
Inventor
Mark Allen Kuck
Susan Wendy Gersten
Original Assignee
Stauffer Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stauffer Chemical Co filed Critical Stauffer Chemical Co
Publication of DK318384D0 publication Critical patent/DK318384D0/da
Publication of DK318384A publication Critical patent/DK318384A/da

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
DK318384A 1984-02-17 1984-06-28 Vedvarende pnictidkilde og leveringssystem til filmaflejring, isaer ved kemisk dampaflejring DK318384A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58110284A 1984-02-17 1984-02-17

Publications (2)

Publication Number Publication Date
DK318384D0 DK318384D0 (da) 1984-06-28
DK318384A true DK318384A (da) 1985-08-18

Family

ID=24323890

Family Applications (1)

Application Number Title Priority Date Filing Date
DK318384A DK318384A (da) 1984-02-17 1984-06-28 Vedvarende pnictidkilde og leveringssystem til filmaflejring, isaer ved kemisk dampaflejring

Country Status (5)

Country Link
EP (1) EP0152669A3 (fr)
JP (1) JPS60177616A (fr)
KR (1) KR850006256A (fr)
AU (1) AU2993684A (fr)
DK (1) DK318384A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2727322B1 (fr) * 1994-11-30 1996-12-27 Kodak Pathe Procede pour la sublimation d'un materiau solide et dispositif pour la mise en oeuvre du procede

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2503571A (en) * 1947-05-02 1950-04-11 Bell Telephone Labor Inc Apparatus for coating surfaces by thermal vaporization at atmospheric pressure
DE1204494B (de) * 1956-06-09 1965-11-04 Siemens Ag Verfahren und Vorrichtung zum Aufdampfen von Schichten aus einer bei Aufdampftemperatur nicht bestaendigen, als Halbleiter-Grundstoff verwendbaren Stoechiometrisch genaubestimmten Mehrstoffverbindung
FR1535167A (fr) * 1967-08-24 1968-08-02 Schloemann Ag Procédé et dispositif de dégazage en continu de matériaux métalliques de revêtement
US3674549A (en) * 1968-02-28 1972-07-04 Pioneer Electronic Corp Manufacturing process for an insb thin film semiconductor element
FR2403646A1 (fr) * 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
JPS5799723A (en) * 1980-12-12 1982-06-21 Nippon Telegr & Teleph Corp <Ntt> Forming method for compound semiconductor thin film
AU553091B2 (en) * 1981-12-30 1986-07-03 Stauffer Chemical Company High phosphorus pholyphosphides
JPS58126973A (ja) * 1982-01-22 1983-07-28 Hitachi Ltd 薄膜形成用ソ−ス供給装置

Also Published As

Publication number Publication date
KR850006256A (ko) 1985-10-02
DK318384D0 (da) 1984-06-28
EP0152669A3 (fr) 1986-06-11
EP0152669A2 (fr) 1985-08-28
JPS60177616A (ja) 1985-09-11
AU2993684A (en) 1985-08-22

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Legal Events

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AHB Application shelved due to non-payment