DK2871766T3 - Styresystem til styring af brokoblinger med symmetrisk jordet mellemkreds - Google Patents
Styresystem til styring af brokoblinger med symmetrisk jordet mellemkredsInfo
- Publication number
- DK2871766T3 DK2871766T3 DK14186232.6T DK14186232T DK2871766T3 DK 2871766 T3 DK2871766 T3 DK 2871766T3 DK 14186232 T DK14186232 T DK 14186232T DK 2871766 T3 DK2871766 T3 DK 2871766T3
- Authority
- DK
- Denmark
- Prior art keywords
- control system
- intermediate circuit
- controlling bridge
- grounded intermediate
- bridge couplings
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/487—Neutral point clamped inverters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE201310112262 DE102013112262A1 (de) | 2013-11-07 | 2013-11-07 | Ansteuerschaltung für Drei-Level-Inverter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK2871766T3 true DK2871766T3 (da) | 2017-11-20 |
| DK2871766T5 DK2871766T5 (da) | 2018-02-19 |
Family
ID=51585047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK14186232.6T DK2871766T5 (da) | 2013-11-07 | 2014-09-24 | Styrekredsløb til 3-level inverter |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9318977B2 (da) |
| EP (1) | EP2871766B1 (da) |
| CN (1) | CN104638960B (da) |
| DE (1) | DE102013112262A1 (da) |
| DK (1) | DK2871766T5 (da) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107888100B (zh) * | 2016-09-30 | 2019-12-20 | 维谛技术有限公司 | 一种逆变器、控制逆变器的方法及控制装置 |
| US11259881B2 (en) * | 2016-11-03 | 2022-03-01 | Verb Surgical Inc. | Tool driver with reaction torque sensor for use in robotic surgery |
| DE102017203065A1 (de) * | 2017-02-24 | 2018-08-30 | Volkswagen Aktiengesellschaft | Antriebsumrichter mit integriertem boost-converter |
| US10230364B2 (en) * | 2017-04-26 | 2019-03-12 | Futurewei Technologies, Inc. | Hybrid power devices |
| CN109713893B (zh) * | 2019-03-01 | 2020-03-06 | 南京矽力杰半导体技术有限公司 | 三电平直流-直流变换器及其驱动电路 |
| CN115580120B (zh) * | 2022-11-17 | 2023-02-17 | 杭州飞仕得科技股份有限公司 | 一种基于三电平拓扑结构的igbt驱动保护电路 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2333174A (en) * | 1998-01-09 | 1999-07-14 | Sharp Kk | Data line driver for an active matrix display |
| US6337804B1 (en) * | 2000-09-26 | 2002-01-08 | General Electric Company | Multilevel PWM voltage source inverter control at low output frequencies |
| JP4462776B2 (ja) | 2001-03-13 | 2010-05-12 | 三菱電機株式会社 | 電力変換装置および信号レベル変換装置 |
| JP3806644B2 (ja) * | 2001-12-13 | 2006-08-09 | 三菱電機株式会社 | 電力用半導体装置 |
| JP4647266B2 (ja) * | 2004-09-08 | 2011-03-09 | 富士電機システムズ株式会社 | インバータ装置、集積回路チップ及び車両駆動装置 |
| DE102005023652B3 (de) * | 2005-05-23 | 2006-08-03 | Semikron Elektronik Gmbh & Co. Kg | Schaltungsanordnung mit Fehlererkennung zur Ansteuerung von Leistungshalbleiterschaltern und zugehöriges Verfahren |
| DE102006037336B3 (de) | 2006-08-10 | 2008-02-07 | Semikron Elektronik Gmbh & Co. Kg | Levelshifter für eine Ansteuerschaltung für Leistungshalbleiterbauelemente |
| DE102006050913B4 (de) | 2006-10-28 | 2012-08-23 | Semikron Elektronik Gmbh & Co. Kg | Ansteuerschaltung mit BOT-Levelshifter zur Übertragung eines Eingangssignals und zugeordnetes Verfahren |
| US7884768B2 (en) * | 2006-11-08 | 2011-02-08 | The Boeing Company | Compact, dual-beam phased array antenna architecture |
| DE102007006319B4 (de) | 2007-02-08 | 2012-12-13 | Semikron Elektronik Gmbh & Co. Kg | Ansteuerschaltung mit TOP-Levelshifter zur Übertragung eines Eingangssignals und zugeordnetes Verfahren |
| ATE487263T1 (de) * | 2007-12-12 | 2010-11-15 | Mitsubishi Electric Europ B V | Signalumsetzer zur erzeugung von ansteuersignalen für einen mehrstufigen stromrichter, pwm- ansteuerschaltung |
| US8472223B2 (en) * | 2010-05-12 | 2013-06-25 | Abb Inc. | Bootstrap gate drive for full bridge neutral point clamped inverter |
| KR20110134127A (ko) * | 2010-06-08 | 2011-12-14 | 삼성전자주식회사 | 오디오 데이터 디코딩 장치 및 방법 |
| JP5170165B2 (ja) * | 2010-06-11 | 2013-03-27 | 株式会社村田製作所 | 絶縁型スイッチング電源装置 |
| EP2732544A1 (de) * | 2011-07-12 | 2014-05-21 | SEMIKRON Elektronik GmbH & Co. KG | Verfahren zur regelung einer mittelpunktspannung |
| DE102011088351A1 (de) * | 2011-12-13 | 2013-06-13 | Endress + Hauser Gmbh + Co. Kg | Vorrichtung zur Bestimmung und/oder Überwachung mindestens einer Prozessgröße |
| DE102012220213B3 (de) * | 2012-11-07 | 2014-05-22 | Semikron Elektronik Gmbh & Co. Kg | Ansteuerschaltung mit Übertragungsschaltung und Verfahren zum Betrieb |
| US20150092467A1 (en) * | 2013-09-30 | 2015-04-02 | Infineon Technologies Ag | Driver Circuit for a Pair of Semiconductor Switches in a Leg of a Three-Level Inverter Half-Bridge |
-
2013
- 2013-11-07 DE DE201310112262 patent/DE102013112262A1/de not_active Withdrawn
-
2014
- 2014-09-24 EP EP14186232.6A patent/EP2871766B1/de active Active
- 2014-09-24 DK DK14186232.6T patent/DK2871766T5/da active
- 2014-11-07 CN CN201410641337.0A patent/CN104638960B/zh active Active
- 2014-11-07 US US14/536,285 patent/US9318977B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2871766A1 (de) | 2015-05-13 |
| US9318977B2 (en) | 2016-04-19 |
| CN104638960A (zh) | 2015-05-20 |
| EP2871766B1 (de) | 2017-08-16 |
| US20150188452A1 (en) | 2015-07-02 |
| DK2871766T5 (da) | 2018-02-19 |
| CN104638960B (zh) | 2018-06-29 |
| DE102013112262A1 (de) | 2015-05-07 |
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