DK2411163T3 - Waferbundet cmut-array med ledende kontakthuller - Google Patents

Waferbundet cmut-array med ledende kontakthuller

Info

Publication number
DK2411163T3
DK2411163T3 DK10714943.7T DK10714943T DK2411163T3 DK 2411163 T3 DK2411163 T3 DK 2411163T3 DK 10714943 T DK10714943 T DK 10714943T DK 2411163 T3 DK2411163 T3 DK 2411163T3
Authority
DK
Denmark
Prior art keywords
array
contact holes
wafer bonded
leading contact
cmut
Prior art date
Application number
DK10714943.7T
Other languages
Danish (da)
English (en)
Inventor
Sigrid Berg
Kamal Chapagain
Jon Due-Hansen
Kjell Arne Ingebrigtsen
Geir Uri Jensen
Kjersti Midtboe
Erik Utne Poppe
Arne Roennekleiv
Dag Thorstein Wang
Original Assignee
Norwegian Univ Sci & Tech Ntnu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0905255A external-priority patent/GB0905255D0/en
Priority claimed from GB0905256A external-priority patent/GB0905256D0/en
Priority claimed from GB0909296A external-priority patent/GB0909296D0/en
Application filed by Norwegian Univ Sci & Tech Ntnu filed Critical Norwegian Univ Sci & Tech Ntnu
Application granted granted Critical
Publication of DK2411163T3 publication Critical patent/DK2411163T3/da

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Bipolar Transistors (AREA)
  • Pressure Sensors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DK10714943.7T 2009-03-26 2010-03-26 Waferbundet cmut-array med ledende kontakthuller DK2411163T3 (da)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0905255A GB0905255D0 (en) 2009-03-26 2009-03-26 Cmut array
GB0905256A GB0905256D0 (en) 2009-03-26 2009-03-26 Ultrasound transducer backing layer
GB0909296A GB0909296D0 (en) 2009-05-28 2009-05-28 Ultrasound transsducer damping layer
PCT/GB2010/000583 WO2010109205A2 (en) 2009-03-26 2010-03-26 Cmut array

Publications (1)

Publication Number Publication Date
DK2411163T3 true DK2411163T3 (da) 2013-06-10

Family

ID=42308937

Family Applications (1)

Application Number Title Priority Date Filing Date
DK10714943.7T DK2411163T3 (da) 2009-03-26 2010-03-26 Waferbundet cmut-array med ledende kontakthuller

Country Status (7)

Country Link
US (1) US20120074509A1 (cg-RX-API-DMAC10.html)
EP (4) EP2662153A1 (cg-RX-API-DMAC10.html)
JP (1) JP5744002B2 (cg-RX-API-DMAC10.html)
CN (1) CN102427890A (cg-RX-API-DMAC10.html)
DK (1) DK2411163T3 (cg-RX-API-DMAC10.html)
ES (1) ES2416182T3 (cg-RX-API-DMAC10.html)
WO (1) WO2010109205A2 (cg-RX-API-DMAC10.html)

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US9012324B2 (en) * 2012-08-24 2015-04-21 United Microelectronics Corp. Through silicon via process
KR101851569B1 (ko) 2012-11-28 2018-04-24 삼성전자주식회사 초음파 변환기 및 그 제조방법
WO2014168665A2 (en) * 2013-01-18 2014-10-16 Yale University Methods for making a superconducting device with at least one enclosure
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US10328463B2 (en) 2013-11-22 2019-06-25 Sunnybrook Health Sciences Centre Ultrasonic transducer with backing having spatially segmented surface
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US9948254B2 (en) 2014-02-21 2018-04-17 Yale University Wireless Josephson bifurcation amplifier
TWI661534B (zh) 2014-04-18 2019-06-01 美商蝴蝶網路公司 在互補式金屬氧化物半導體晶圓中的超音波轉換器及相關設備和方法
TWI687710B (zh) 2014-04-18 2020-03-11 美商蝴蝶網路公司 單基板超音波成像裝置的架構、相關設備及方法
CN106456115B (zh) 2014-04-18 2020-03-20 蝴蝶网络有限公司 超声成像压缩方法及设备
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
WO2016106153A1 (en) 2014-12-21 2016-06-30 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication
KR102493109B1 (ko) 2015-02-27 2023-01-30 예일 유니버시티 조셉슨 접합-기반 서큘레이터 및 관련 시스템 및 방법
US10404214B2 (en) 2015-02-27 2019-09-03 Yale University Techniques for producing quantum amplifiers and related systems and methods
JP6894378B2 (ja) 2015-02-27 2021-06-30 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 平面キュービットを非平面共振器に連結するための技術ならびに関連する系および方法
CN107683527A (zh) 2015-04-17 2018-02-09 耶鲁大学 无线约瑟夫逊参数转换器
US10427188B2 (en) 2015-07-30 2019-10-01 North Carolina State University Anodically bonded vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT)
US9987661B2 (en) 2015-12-02 2018-06-05 Butterfly Network, Inc. Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
CN108698815B (zh) 2016-01-15 2022-04-08 耶鲁大学 用于操纵双量子位量子态的技术及相关系统和方法
CN106998522B (zh) * 2016-01-25 2023-07-28 中国科学院苏州纳米技术与纳米仿生研究所 微电容超声传感器
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FR3114255B1 (fr) * 2020-09-18 2023-05-05 Moduleus Transducteur CMUT
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WO2022272217A1 (en) * 2021-06-23 2022-12-29 Boston Scientific Scimed, Inc. Ultrasound transducer
FR3135858B1 (fr) * 2022-05-23 2025-04-18 Vermon Transducteur CMUT et procédé de fabrication d’un transducteur CMUT

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Also Published As

Publication number Publication date
EP2662153A1 (en) 2013-11-13
JP5744002B2 (ja) 2015-07-01
EP2669019A1 (en) 2013-12-04
EP2411163A2 (en) 2012-02-01
EP2411163B1 (en) 2013-05-15
EP2659987A1 (en) 2013-11-06
ES2416182T3 (es) 2013-07-30
WO2010109205A3 (en) 2011-03-03
WO2010109205A2 (en) 2010-09-30
US20120074509A1 (en) 2012-03-29
JP2012521704A (ja) 2012-09-13
CN102427890A (zh) 2012-04-25

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