DK199901580A - Silicium mesa struktur integreret i en glas på silicium bølgeleder, samt fremgangsmåde til fremstiiling heraf - Google Patents
Silicium mesa struktur integreret i en glas på silicium bølgeleder, samt fremgangsmåde til fremstiiling herafInfo
- Publication number
- DK199901580A DK199901580A DK199901580A DKPA199901580A DK199901580A DK 199901580 A DK199901580 A DK 199901580A DK 199901580 A DK199901580 A DK 199901580A DK PA199901580 A DKPA199901580 A DK PA199901580A DK 199901580 A DK199901580 A DK 199901580A
- Authority
- DK
- Denmark
- Prior art keywords
- silicon
- fabrication
- glass
- well
- mesa structure
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/105—Materials and properties semiconductor single crystal Si
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DK199901580A DK199901580A (da) | 1999-11-03 | 1999-11-03 | Silicium mesa struktur integreret i en glas på silicium bølgeleder, samt fremgangsmåde til fremstiiling heraf |
US10/111,391 US6775455B1 (en) | 1999-11-03 | 2000-11-03 | Silicon mesa structure integrated in a glass-on-silicon waveguide, and a method of manufacturing it |
EP00972652.2A EP1230717B1 (de) | 1999-11-03 | 2000-11-03 | Eine in einem glas-auf-silizium-wellenleiter integrierte siliziummesastruktur deren herstellungsverfahren |
AU11317/01A AU1131701A (en) | 1999-11-03 | 2000-11-03 | A silicon mesa structure integrated in a glass-on-silicon waveguide, and a method of manufacturing it |
PCT/DK2000/000615 WO2001033676A2 (en) | 1999-11-03 | 2000-11-03 | A silicon mesa structure integrated in a glass-on-silicon waveguide, and a method of manufacturing it |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DK199901580A DK199901580A (da) | 1999-11-03 | 1999-11-03 | Silicium mesa struktur integreret i en glas på silicium bølgeleder, samt fremgangsmåde til fremstiiling heraf |
Publications (1)
Publication Number | Publication Date |
---|---|
DK199901580A true DK199901580A (da) | 2001-05-04 |
Family
ID=8106262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK199901580A DK199901580A (da) | 1999-11-03 | 1999-11-03 | Silicium mesa struktur integreret i en glas på silicium bølgeleder, samt fremgangsmåde til fremstiiling heraf |
Country Status (5)
Country | Link |
---|---|
US (1) | US6775455B1 (de) |
EP (1) | EP1230717B1 (de) |
AU (1) | AU1131701A (de) |
DK (1) | DK199901580A (de) |
WO (1) | WO2001033676A2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7118682B2 (en) * | 2003-03-28 | 2006-10-10 | Sioptical, Inc. | Low loss SOI/CMOS compatible silicon waveguide and method of making the same |
JP2005128419A (ja) * | 2003-10-27 | 2005-05-19 | Nec Corp | 光導波路構造およびその作製方法 |
US9219020B2 (en) * | 2012-03-08 | 2015-12-22 | Infineon Technologies Ag | Semiconductor device, wafer assembly and methods of manufacturing wafer assemblies and semiconductor devices |
US8995800B2 (en) | 2012-07-06 | 2015-03-31 | Teledyne Scientific & Imaging, Llc | Method of fabricating silicon waveguides with embedded active circuitry |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4585299A (en) * | 1983-07-19 | 1986-04-29 | Fairchild Semiconductor Corporation | Process for fabricating optical wave-guiding components and components made by the process |
US5057022A (en) | 1989-03-20 | 1991-10-15 | Miller Robert O | Method of making a silicon integrated circuit waveguide |
FR2683054B1 (fr) * | 1991-10-25 | 1993-12-03 | Commissariat A Energie Atomique | Modulateur electrooptique integre et procede de fabrication de ce modulateur. |
FR2726097B1 (fr) | 1994-10-25 | 1996-11-15 | Commissariat Energie Atomique | Cellule electro-optique a mode transverse electrique pour un modulateur et procede de realisation d'une telle cellule |
JP3147141B2 (ja) * | 1995-08-30 | 2001-03-19 | 株式会社日立製作所 | 光アセンブリ |
US5793913A (en) * | 1996-07-10 | 1998-08-11 | Northern Telecom Limited | Method for the hybrid integration of discrete elements on a semiconductor substrate |
JP3343846B2 (ja) * | 1996-10-21 | 2002-11-11 | 日本電信電話株式会社 | 光導波路の製造方法 |
GB2318647B (en) | 1997-08-30 | 1998-09-09 | Bookham Technology Ltd | Integrated optical polariser |
JP3337403B2 (ja) * | 1997-09-19 | 2002-10-21 | 日本電信電話株式会社 | 周波数安定化レーザ |
GB2332284B (en) | 1998-05-01 | 1999-11-03 | Bookham Technology Ltd | Branched optical waveguide,and its method of use |
GB2348293A (en) | 1999-03-25 | 2000-09-27 | Bookham Technology Ltd | Optical phase modulator |
-
1999
- 1999-11-03 DK DK199901580A patent/DK199901580A/da not_active Application Discontinuation
-
2000
- 2000-11-03 EP EP00972652.2A patent/EP1230717B1/de not_active Expired - Lifetime
- 2000-11-03 US US10/111,391 patent/US6775455B1/en not_active Expired - Lifetime
- 2000-11-03 AU AU11317/01A patent/AU1131701A/en not_active Abandoned
- 2000-11-03 WO PCT/DK2000/000615 patent/WO2001033676A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP1230717B1 (de) | 2017-07-19 |
WO2001033676A3 (en) | 2008-01-10 |
EP1230717A1 (de) | 2002-08-14 |
WO2001033676A2 (en) | 2001-05-10 |
AU1131701A (en) | 2001-05-14 |
US6775455B1 (en) | 2004-08-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AHB | Application shelved due to non-payment |